JPS62291136A - Wiring method for integrated circuit - Google Patents

Wiring method for integrated circuit

Info

Publication number
JPS62291136A
JPS62291136A JP13663586A JP13663586A JPS62291136A JP S62291136 A JPS62291136 A JP S62291136A JP 13663586 A JP13663586 A JP 13663586A JP 13663586 A JP13663586 A JP 13663586A JP S62291136 A JPS62291136 A JP S62291136A
Authority
JP
Japan
Prior art keywords
wiring
layer
blocks
logic function
wirings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13663586A
Other languages
Japanese (ja)
Inventor
Fumiaki Tsukuda
佃 文明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP13663586A priority Critical patent/JPS62291136A/en
Publication of JPS62291136A publication Critical patent/JPS62291136A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To alleviate the complexity of a wiring route and to further reduce wiring regions by wiring only by first layer wiring in a logic function block, and wiring between the blocks by second and third layer wirings. CONSTITUTION:A diffused layer 1, a polysilicon 2, a first layer wiring 3 and a connecting hole 4 for connecting the layer 1 with the polysilicon 2 and the wiring 3 are formed in a logic function block, and external input/output terminal point 5 is set at the position of the lattice point 10 of the wiring track of a lattice pattern of a predetermined pitch P predetermined in both horizontal and vertical directions with respect to a logic function block origin 7. The second and third layer wirings are disposed along the lattice line 12 necessary for the wiring track of the temporary lattice pattern, and wired between the blocks. Thus, the complexity of the wirings between the blocks can be reduced, and since the second and third layer wirings can be formed by freely passing over the blocks to some degree, the designing term and the designing mistake can be reduced.

Description

【発明の詳細な説明】 3、発明の詳細な説明 〔産業上の利用分野〕 本発明は、3層金属配線構造を有する半導体集積回路の
配線方法に関する。
Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a wiring method for a semiconductor integrated circuit having a three-layer metal wiring structure.

〔従来の技術〕[Conventional technology]

従来の半導体集積回路、特に、汎用の1チップマイクロ
プロセッ丈等の半導体集積回路は、半導体基板に3層金
属配線層を製造することの困難さから、1層又は2層金
属配線構造を有するものが主流であった。
Conventional semiconductor integrated circuits, especially semiconductor integrated circuits such as general-purpose one-chip microprocessors, have a one-layer or two-layer metal wiring structure due to the difficulty of manufacturing three-layer metal wiring layers on a semiconductor substrate. was the mainstream.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来の1層又は2層配線技術を用いて、汎用の
1チツプマイクロプロセツサ等を設計する場合、チップ
面積最小化や、高速化の必要性から現状では人手で、1
層、2層配線を設削せざるを得ない。前記、人手設計手
法で、3層配線技術を用いて、上記、汎用の1チップマ
イクロプロセッサ等を設計しようとした場合、従来がら
の配線経路の複雑さに加え、配線層がI Jiii増え
たことによる結線の複雑さがからみ合い、よシ設計が複
雑化を増し、設計工期の長期化及び、設計ミスの増大を
引きおこし、さらに、3層配線技術を用いる最大の目的
である、配線領域の減少を実現できない欠点があった。
When designing a general-purpose one-chip microprocessor using the conventional one-layer or two-layer wiring technology described above, it is currently necessary to minimize the chip area and increase speed.
There is no choice but to create two-layer and two-layer wiring. When attempting to design a general-purpose one-chip microprocessor, etc. using the three-layer wiring technology using the manual design method described above, in addition to the complexity of the conventional wiring route, the number of wiring layers increases by I Jiii. The complexity of the interconnection is intertwined, which increases the complexity of the design, prolongs the design period, and increases the number of design errors. There was a drawback that the reduction could not be achieved.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の3層配線構造でもって半導体集積回路の配線を
行うには、論理機能ブロック内を第1層目の配線のみで
実施し、論理機能ブロック間の配線を第2層及び第3層
の配線を用いて実施し、かつ、前記第2層および第3層
配線は、予じめ決められた一部ピッチの格子模様の配線
経路を現定する配線トラックの任意の格子線を利用して
結線することで、配線経路の複雑さを緩和し、さら配線
領域をよシ少々くしている。
To wire a semiconductor integrated circuit using the three-layer wiring structure of the present invention, the inside of the logic function block is implemented using only the first layer wiring, and the wiring between the logic function blocks is performed using the second and third layer wiring. The second and third layer wirings are carried out using arbitrary grid lines of wiring tracks that create a grid pattern wiring route with a predetermined partial pitch. By connecting the wires, the complexity of the wiring route is reduced, and the wiring area is also made more compact.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図から第4図に本発明の一実施例全説明するための
平面図を示す。第1図は、本発明の論理機能ブロックの
マスクパターン図である。第1図において、論理機能ブ
ロック内は拡散層1、ポリシリコン2、第1層配線3、
及び、上記拡散層1とポリシリコン2と第1層配線3と
を接続する接続穴4で構成され、さらに、論理機能ブロ
ック原点7に対し、第3図に示す、水平垂直方向共予じ
め決められた一部ピッチPの格子模様の配線トラックの
格子点10の位置に外部人、出力端子点5を設定しであ
る。第2図は複数の前記、論理機能ブロック9のそれぞ
れの原点7をチップ原点11に対し、第3図に示す一部
ピッチPの格子模様の任意の格子央10に合せて配置し
たチップ構成図である。第3図は、前記第2図のチップ
構成図の一部で、一定のピッチPに定めた格子模様の配
線トラックを配置した構成図である。第4図は、前記第
3図で示した仮シの格子模様の配線トラックの必要な格
子線12に沿って第2層配線13と第3層配線14を配
置し、論理機能ブロック間の配線を行なった配線結果で
ある。
FIGS. 1 to 4 are plan views for fully explaining an embodiment of the present invention. FIG. 1 is a mask pattern diagram of a logical functional block of the present invention. In FIG. 1, the logic function block includes a diffusion layer 1, polysilicon 2, first layer wiring 3,
The diffusion layer 1, the polysilicon 2, and the first layer interconnection 3 are connected to each other through a connection hole 4, and the logic function block origin 7 is formed in advance in both the horizontal and vertical directions as shown in FIG. An external person sets an output terminal point 5 at the position of a grid point 10 of a grid pattern wiring track with a predetermined partial pitch P. FIG. 2 is a chip configuration diagram in which the origin 7 of each of the plurality of logic function blocks 9 is arranged with respect to the chip origin 11 at an arbitrary lattice center 10 of the lattice pattern with a partial pitch P shown in FIG. It is. FIG. 3 is a part of the chip configuration diagram of FIG. 2, and is a configuration diagram in which wiring tracks are arranged in a lattice pattern at a constant pitch P. FIG. 4 shows how the second layer wiring 13 and the third layer wiring 14 are arranged along the necessary grid lines 12 of the virtual grid pattern wiring track shown in FIG. This is the wiring result.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、3層配線構造を有する半
導体集積回路において論理機能ブロック内を第1層目の
配線のみで設計し、さらに、入出力端子位置を、一定ピ
ツチの格子模様配線トラックの任意の格子点位置に設定
しておき、このような複数個の論理機能ブロックでチッ
プ内部を構成し、論理機能ブロック間の配線を、チップ
面全体を仮想的に被う一部ピッチの格子模様配線トラッ
クの必要部分をとシ出した第2層及び第3層配線で、結
線する配線方法を用いることで、論理機能ブロック間の
配線の複雑さを低減することができ、かつ、論理機能ブ
ロック上を第2層及び第3層配線がある程度自由に通過
させて配線できることがら、設計工期の長期化及び設計
ミスを低減し、がっ、3層配線構造の利点を充分生かし
た設計ができる効果がある。
As explained above, the present invention designs a logic function block in a semiconductor integrated circuit having a three-layer wiring structure using only the first layer wiring, and furthermore, the input/output terminal positions are arranged on grid pattern wiring tracks with a constant pitch. The inside of the chip is configured with such multiple logic function blocks, and the wiring between the logic function blocks is set at an arbitrary grid point position that virtually covers the entire chip surface. By using a wiring method that connects the second and third layer wiring by cutting out the necessary parts of the pattern wiring track, it is possible to reduce the complexity of the wiring between logical function blocks, and to connect the logical function blocks. Since the 2nd and 3rd layer wiring can pass over the block freely to some extent, the design period can be lengthened and design errors can be reduced, making it possible to create a design that takes full advantage of the advantages of the 3-layer wiring structure. effective.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例に係る論理機能プロツクのマ
スクパターン図、第2図は本発明の一実施例に係るチッ
プ構成図、第3図は、第2図のチップ構成図の一部に一
部ピッチの格子模様配線トラックを配置した状態を示す
平面図、第4図は本発明の一実施例に係る論理機能ブロ
ック間配線構成図である。 1・−拡散層、2・・・ポリシリコン、3・・・第1層
金屑配線、4・・・接続穴、5・・・入出力端子、7・
・・論理機能ブロック原点、8・チップ周辺領域、9・
・・論理機能ブロック、10・・格子点、11・・チッ
プ原点、12・・格子線、13・・第2層配線、14・
・・第3層配線。 拾1層酉υ菓 模範フロック qq   格子、鰍 7原芦、 10      チ・フ゛圃辺 箇杯f「 X     X X XX    杉(能プロ、りX’
X     X り KXX 3−下■ヨ 符開昭62−291136(3) 第3 図 1十口ち画↓9
FIG. 1 is a mask pattern diagram of a logic function block according to an embodiment of the present invention, FIG. 2 is a chip configuration diagram according to an embodiment of the present invention, and FIG. 3 is an example of the chip configuration diagram of FIG. 2. FIG. 4 is a plan view showing a state in which lattice pattern wiring tracks with a partial pitch are arranged in a section, and FIG. 4 is a wiring configuration diagram between logical function blocks according to an embodiment of the present invention. 1.-diffusion layer, 2.. polysilicon, 3.. first layer metal scrap wiring, 4.. connection hole, 5.. input/output terminal, 7.
・Logic function block origin, 8・Chip peripheral area, 9・
...Logic function block, 10.. Grid point, 11.. Chip origin, 12.. Grid line, 13.. Second layer wiring, 14.
...Third layer wiring. X X
X

Claims (1)

【特許請求の範囲】 複数個のトランジスタをもつ論理機能ブロックの複数個
が一つの半導体基板に形成された半導体集積回路の配線
を、下層から第1層、第2層、第3層の3層の配線でも
って配線するに際し、 (イ)上記それぞれの論理機能ブロック内の配線を前記
第1層の配線で行ない、かつ、前記各機能ブロックの原
点および外部入出力端子の位置を、前記基板内の配線経
路を規定する予じめ決められた一定ピッチの格子模様の
配線トラックの任意の格子点に配置すること。 (ロ)前記各機能ブロックの入出力端子を通して行う各
機能ブロック間の接続配線は、前記第2層、第3層の配
線を用い、かつ、これら配線は前記配線トラックからと
り出された任意の格子線に沿って行うこと。を特徴とす
る集積回路の配線方法。
[Claims] The wiring of a semiconductor integrated circuit in which a plurality of logical function blocks each having a plurality of transistors are formed on one semiconductor substrate is arranged in three layers from the bottom: the first layer, the second layer, and the third layer. (a) The wiring within each of the logical function blocks described above is performed using the wiring of the first layer, and the origin of each of the functional blocks and the position of the external input/output terminal are set within the board. Placement at any grid point on a predetermined predetermined pitch grid pattern wiring track that defines the wiring route. (b) The connection wiring between each functional block through the input/output terminals of each functional block uses the wiring of the second and third layers, and these wirings are any arbitrary wires taken out from the wiring track. Do it along the grid lines. An integrated circuit wiring method characterized by:
JP13663586A 1986-06-11 1986-06-11 Wiring method for integrated circuit Pending JPS62291136A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13663586A JPS62291136A (en) 1986-06-11 1986-06-11 Wiring method for integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13663586A JPS62291136A (en) 1986-06-11 1986-06-11 Wiring method for integrated circuit

Publications (1)

Publication Number Publication Date
JPS62291136A true JPS62291136A (en) 1987-12-17

Family

ID=15179916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13663586A Pending JPS62291136A (en) 1986-06-11 1986-06-11 Wiring method for integrated circuit

Country Status (1)

Country Link
JP (1) JPS62291136A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229629A (en) * 1990-08-10 1993-07-20 Kabushiki Kaisha Toshiba Semiconductor integrated circuit having improved cell layout
JP2010141187A (en) * 2008-12-12 2010-06-24 Renesas Technology Corp Semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229629A (en) * 1990-08-10 1993-07-20 Kabushiki Kaisha Toshiba Semiconductor integrated circuit having improved cell layout
JP2010141187A (en) * 2008-12-12 2010-06-24 Renesas Technology Corp Semiconductor integrated circuit device

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