JPS62291033A - Washing of silicon wafer - Google Patents
Washing of silicon waferInfo
- Publication number
- JPS62291033A JPS62291033A JP13442186A JP13442186A JPS62291033A JP S62291033 A JPS62291033 A JP S62291033A JP 13442186 A JP13442186 A JP 13442186A JP 13442186 A JP13442186 A JP 13442186A JP S62291033 A JPS62291033 A JP S62291033A
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafer
- glycosolve
- wafer
- cleaning
- protective tape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 19
- 239000010703 silicon Substances 0.000 title claims abstract description 19
- 238000005406 washing Methods 0.000 title abstract 5
- 239000007788 liquid Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 9
- 230000001681 protective effect Effects 0.000 claims abstract description 9
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims abstract 5
- WOYWLLHHWAMFCB-UHFFFAOYSA-N 2-ethylhexyl acetate Chemical compound CCCCC(CC)COC(C)=O WOYWLLHHWAMFCB-UHFFFAOYSA-N 0.000 claims abstract 3
- 238000004140 cleaning Methods 0.000 claims description 38
- 235000012431 wafers Nutrition 0.000 claims 6
- 239000012535 impurity Substances 0.000 abstract description 7
- 239000003795 chemical substances by application Substances 0.000 abstract description 6
- -1 diethylene glycol monoalkyl ether Chemical class 0.000 abstract description 5
- 239000000839 emulsion Substances 0.000 abstract description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 abstract 2
- 239000013543 active substance Substances 0.000 abstract 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004513 sizing Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
（発明の目的〕
（産業上の利用分野）
本発明はシリコンウェハの洗浄方法に係り、特にウェハ
アセンブリ■稈における裏面研削時のシリコンウェハの
洗浄方法に関する。Detailed Description of the Invention 3. Detailed Description of the Invention (Object of the Invention) (Industrial Field of Application) The present invention relates to a method of cleaning a silicon wafer, and particularly to a method of cleaning a silicon wafer during back grinding in a wafer assembly. Regarding cleaning methods.
（従来の技術）
従来、シリコンウェハの裏面研削を行なう場合、塩化ビ
ニール、ポリエチレン等の保護テープをシリコンウェハ
の表面に接着し、表面を保護しながら研削が行なわれる
。そして、研削が終了したら、上記保護テープを剥がし
てシリコンウェハの洗浄が行なわれる。この洗浄液とし
ては、従来、トリクレン、メタクレン、アルコール、フ
レオン等が用いられていた。(Prior Art) Conventionally, when grinding the back side of a silicon wafer, a protective tape made of vinyl chloride, polyethylene, or the like is adhered to the surface of the silicon wafer, and the grinding is performed while protecting the surface. After the grinding is completed, the protective tape is removed and the silicon wafer is cleaned. As this cleaning liquid, trichlene, methacrene, alcohol, freon, etc. have conventionally been used.
（発明が解決しようとする問題点）
しかし、上記洗浄液の場合、洗浄後のシリ″Ｘ１ンウエ
ハをＷ Ｉ Ｓ（ Ｗａｆｅｒ Ｉｎｓｐｅｃｔｉｏｎ
Ｓｙｓｔｃｎ＋ ）でチェックすると、ウェハの表面
の付着物が十分に除去されないという問題を有しており
、これによりＩＣ製造後の信頼性に欠けてしまうという
問題があった。(Problem to be Solved by the Invention) However, in the case of the above cleaning liquid, the silicon wafer after cleaning is subjected to WIS (Wafer Inspection).
Systcn+), there was a problem in that deposits on the surface of the wafer were not sufficiently removed, resulting in a lack of reliability after IC manufacturing.
第１表に従来の洗浄液による洗浄後のつＪハをＷＩＳで
検査した結果を示す。Table 1 shows the results of WIS inspection of the parts after cleaning with a conventional cleaning solution.
第１表
この表を見ると明らかなように、いずれの洗浄液を用い
た場合でも、ウェハの付着物が多く存在していることが
わかる。なお、フレオンおよびトリクレンを用いた場合
、不純物の粒径が０．５μ以下の数が少ない値を示して
いるが、これは、実際には極めて多いため測定不能とな
ったためである。Table 1 As is clear from this table, no matter which cleaning solution was used, there was a large amount of deposits on the wafer. Note that when freon and trichlene are used, the number of impurities with a particle diameter of 0.5 μm or less is small, but this is because the number of impurities is actually extremely large and cannot be measured.
本発明は上記した点に鑑みてなされたもので、ウェハ研
削後に不純物を十分に洗浄することのできるシリコンウ
ェハの洗浄方法を提供することを目的とするものである
。The present invention has been made in view of the above-mentioned points, and an object of the present invention is to provide a silicon wafer cleaning method that can sufficiently clean impurities after wafer grinding.
（発明の構成〕
（問題点を解決するための手段）
上記目的を達成するため本発明に係るシリ」ンウエハの
洗浄方法は、ウェハの裏面研削時に粘着される保護テー
プの糊材Ｊ３よび洗浄液として、グリコツループＴＭ、
ブチルカルピトール、２エブ−ルヘキシルアセテートの
いずれかを用いることをその特徴とするものであり、こ
こで、グリコソルブＴＭ、ブチルカルピトールは、それ
ぞれ三ｔ＋東圧■の商品名であり、グリコソルブＴＭ、
はトリエブ−レングリ］−ルモノメチル］ニーチル、ブ
チルカルピトールは、ジエヂレングリコールモノアルキ
ルエーテルである。さらに、好ましくは上記糊剤はアク
リルエマルジフン糊にブチルカルピトールおよび界面活
性剤を添加したものを用い、洗浄液にグリコソルブＴＭ
を用い、ざらに好ましくは洗浄液に界面活性剤を添加す
る。(Structure of the Invention) (Means for Solving the Problems) In order to achieve the above object, the silicon wafer cleaning method according to the present invention uses adhesive J3 of the protective tape and cleaning liquid to be adhered when grinding the back surface of the wafer. , Glico Group TM,
It is characterized by the use of either butyl calpitol or 2-ebulhexyl acetate. Here, Glycosolve TM and butyl calpitol are the trade names of Sant+Toatsu■, respectively, and Glycosolve TM,
is triethylene glycol monomethyl] nityl, and butyl carpitol is diethyl glycol monoalkyl ether. Furthermore, preferably, the above-mentioned glue is an acrylic emulsion paste with butylcarpitol and a surfactant added, and the cleaning liquid is Glycosolve™.
A surfactant is preferably added to the cleaning solution.
また、上記洗浄液を３０〜１５０℃の温度に保持し、超
音波（１５０Ｗ）を１〜３０分かけながら洗浄すること
が好ましい。この場合に、洗浄液＝ ３ −
の温度が高いときは超１４波をかける時間を知かく設定
し、洗浄液の温度が低いときは長い時間超音波をかける
ようにする。Further, it is preferable to maintain the cleaning liquid at a temperature of 30 to 150° C. and perform cleaning while applying ultrasonic waves (150 W) for 1 to 30 minutes. In this case, when the temperature of the cleaning liquid = 3- is high, the time for applying ultrasonic waves is carefully set, and when the temperature of the cleaning liquid is low, the ultrasonic waves are applied for a long time.
（実施例） 以下、本発明の詳細な説明する。(Example) The present invention will be explained in detail below.
保護テープの糊剤どしてアクリルエマルジミン糊にグリ
コソルブｌ−Ｍ 、ブブールカルビトール、２エヂルヘ
ギシルア廿アートをそれぞれ混入し、さらに、界面活＋
１剤を入れたものを用い、洗浄液としてグリコツル−１
ＦＭ１ブチルカルピトールＴチルヘキシルアセテートを
用い、洗浄液の温度を４０℃、超音波を１０分という条
件下でＷＴＳを行なった結果を第２表に示す。また、第
１図にＮｏ． １〜Ｎｏ． ６のつ■ハへの不純物の付
着状態を示す。Glycosolve l-M, bubur carbitol, and 2-edylhegisyl acetate were mixed into acrylic emulsion paste as a glue for protective tape, and then surfactant +
Glycotle-1 is used as a cleaning solution.
Table 2 shows the results of WTS performed using FM1 butylcarpitol T-tylhexyl acetate under conditions of a cleaning solution temperature of 40° C. and ultrasonic waves for 10 minutes. Also, in Fig. 1, No. 1~No. 6 shows the state of impurity adhesion to the hole.
第２表
この結果によれば、単に界面活性剤のみで洗浄を行なっ
た場合に比べて、いずれ・ｂよい洗浄効果が得られるこ
とがわかる。中でも糊剤にブチルカルピトール、グリコ
ソルブ１Ｍを用い洗浄液にグリコソルブ王Ｍを用いたも
のと、糊剤および洗浄液ともに２エチルへキシルアセデ
ートを用いたものが良好であった。According to the results in Table 2, it can be seen that a better cleaning effect can be obtained than when cleaning is performed simply with a surfactant alone. Among them, the one in which butyl calpitol and Glycosolve 1M were used as the sizing agent and Glycosolve King M in the cleaning liquid, and the one in which 2-ethylhexyl acedate was used for both the sizing agent and the cleaning liquid were good.
しかし、２エヂルヘキシルアセブートは強烈な臭気を伴
なう上に廃液処理が回動であり、糊剤にグリコソルブ１
Ｍを添加した場合はデープ工程で糊剤が変色する。その
ため、糊剤に１デルカルピトール、洗浄液にグルニ１ソ
ルブ［Ｍを用いるのが最も好ましい。However, 2-edylhexyl acebuto has a strong odor, waste liquid disposal is rotary, and glycosol 1 is used as a glue.
When M is added, the size agent changes color during the dipping step. Therefore, it is most preferable to use 1Delcalpitol as the glue and Gurni 1Solv [M] as the cleaning solution.
また、洗浄液にグリ］ソルブＴＭを用い、この洗浄液の
温度と超？１波をかりる時間とが洗β効果に与える影響
を検問した結果を第２図に示す。In addition, using Guri Solv TM as the cleaning liquid, the temperature of this cleaning liquid and ultra? Figure 2 shows the results of examining the influence of the time it takes for one wave on the cleaning β effect.
これによれば、洗浄液の温度を高くし、超音波を長時間
かけると洗浄効果が高まることがわかる。According to this, it can be seen that the cleaning effect is enhanced by increasing the temperature of the cleaning liquid and applying ultrasonic waves for a long time.
〔発明の効果）
以上述べたように本発明に係るシリ］ンウ■ハの洗浄方
法（ま、保護−ｊ−−ブの糊剤および洗浄剤としてグリ
コツル７ Ｔ Ｍ 、ブブｌレカルビ１〜−ル、２１デ
ルヘキシルアｔニーｊ−１〜のいずれかを用いるように
しているので、洗浄効果が高まり、ウェハに不純物が付
着する量が著しく減少する。したがって、ウェハの信頼
性が高まる等の効果を奏する。[Effects of the Invention] As described above, Glycotle 7 TM and Bubble Calvi 1 to 1 are used as adhesives and detergents for silicone cleaning methods according to the present invention. , 21 Derhexyl Atnyj-1~ is used, the cleaning effect is enhanced and the amount of impurities attached to the wafer is significantly reduced.Therefore, the reliability of the wafer is improved, etc. .
第１図（ａ）（ｂ）（ｃ）（ｄ）（ｅ）（ｆ）はウェハ
への不純物の付着状態を示す説明図、第２図は洗浄液の
温度と超音波をが（プる時間とに対する洗浄効果の関係
を示す線図である。
出願人代理人 佐 藤 −・ 雄π褌ぼ凝県拓Figure 1 (a), (b), (c), (d), (e), and (f) are explanatory diagrams showing the state of impurity adhesion to the wafer, and Figure 2 shows the temperature of the cleaning solution and the time of applying ultrasonic waves. This is a diagram showing the relationship between the cleaning effect and the cleaning effect.
Claims (1)
コンウェハの裏面研削を行なった後上記保護テープを剥
がしてシリコンウェハを洗浄するシリコンウェハの洗浄
方法において、上記保護テープ貼着用の糊剤および上記
洗浄用の洗浄液としてグリコソルブＴＭ、ブチルカルビ
トール、２エチルヘキシルアセテートのいずれかを用い
ることを特徴とするシリコンウェハの洗浄方法。A silicon wafer cleaning method in which a protective tape is attached to the surface of a silicon wafer, the back side of the silicon wafer is ground, and the silicon wafer is then peeled off and the silicon wafer is cleaned. A method for cleaning silicon wafers, characterized in that one of Glycosolve™, butyl carbitol, and 2-ethylhexyl acetate is used as a cleaning liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13442186A JPH0828341B2 (en) | 1986-06-10 | 1986-06-10 | Silicon wafer cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13442186A JPH0828341B2 (en) | 1986-06-10 | 1986-06-10 | Silicon wafer cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62291033A true JPS62291033A (en) | 1987-12-17 |
| JPH0828341B2 JPH0828341B2 (en) | 1996-03-21 |
Family
ID=15127993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13442186A Expired - Lifetime JPH0828341B2 (en) | 1986-06-10 | 1986-06-10 | Silicon wafer cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0828341B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01226586A (en) * | 1988-03-04 | 1989-09-11 | Yoshino Kogyosho Co Ltd | Rack cleaning method |
-
1986
- 1986-06-10 JP JP13442186A patent/JPH0828341B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01226586A (en) * | 1988-03-04 | 1989-09-11 | Yoshino Kogyosho Co Ltd | Rack cleaning method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0828341B2 (en) | 1996-03-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE19525521B4 (en) | Process for cleaning substrates | |
| CN101130229A (en) | Double-side polishing method for gallium phosphide wafer | |
| DE2722390A1 (en) | PROCEDURE FOR CLEANING OBJECTS | |
| JPH09157628A (en) | Adhesive for temporarily bonding wafer | |
| JPS62291033A (en) | Washing of silicon wafer | |
| CN101875886A (en) | Sapphire infrared window cleaning agent and preparation method | |
| JPS62101678A (en) | Protective member for semiconductor wafer | |
| JP2009046353A (en) | Method of preventing cutting chips from adhering onto glass surface during processing of glass | |
| US4613378A (en) | Method of restoring marble and brick surfaces | |
| CN106675819A (en) | Antifogging detergent and preparation method thereof | |
| JPH02257613A (en) | Removal of contamination by fine particle | |
| CN108531311A (en) | One kind being used for the prewashed cleaning agent of LCD glass substrates and its cleaning method | |
| JP3454533B2 (en) | Cleaning method | |
| JP2794775B2 (en) | Photomask cleaning method | |
| JP3801403B2 (en) | Cleaning composition for liquid crystal panel and method for cleaning liquid crystal panel using the composition | |
| GB2203162A (en) | Anti-static compositions | |
| JPH01135574A (en) | Cleaning of substrate for forming vapor deposition membrane | |
| JPS6169032A (en) | Production for liquid crystal display element | |
| JPS63110730A (en) | Drying method for semiconductor wafer | |
| JPH0336809A (en) | Rinse method for wafer for surface acoustic wave element | |
| Swarbrick | A PEEL TECHNIQUE FOR THE STUDY OF SEDIMENTARY STRUCTURES. | |
| JPS58198599A (en) | Hard brittle material cleaning method | |
| Reberholt et al. | An improved method of etching iron meteorites | |
| CN117327543A (en) | Probe card cleaning solution | |
| JPH09176693A (en) | Glass polisher |