JPH0828341B2 - Silicon wafer cleaning method - Google Patents
Silicon wafer cleaning methodInfo
- Publication number
- JPH0828341B2 JPH0828341B2 JP13442186A JP13442186A JPH0828341B2 JP H0828341 B2 JPH0828341 B2 JP H0828341B2 JP 13442186 A JP13442186 A JP 13442186A JP 13442186 A JP13442186 A JP 13442186A JP H0828341 B2 JPH0828341 B2 JP H0828341B2
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- silicon wafer
- protective tape
- wafer
- cleaning liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Adhesive Tapes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明はシリコンウエハの洗浄方法に係り、特にウエ
ハアセンブリ工程における裏面研削時のシリコンウエハ
の洗浄方法に関する。The present invention relates to a method for cleaning a silicon wafer, and more particularly to a method for cleaning a silicon wafer during backside grinding in a wafer assembly process.
（従来の技術） 従来、シリコンウエハの裏面研削を行なう場合、塩化
ビニール、ポリエチレン等の保護テープをシリコンウエ
ハの表面に接着し、表面を保護しながら研削が行なわれ
る。そして、研削が終了したら、上記保護テープを剥が
してシリコンウエハの洗浄が行なわれる。この洗浄液と
しては、従来、トリクレン、メタクレン、アルコール、
フレオン等が用いられていた。(Prior Art) Conventionally, when the back surface of a silicon wafer is ground, a protective tape such as vinyl chloride or polyethylene is adhered to the surface of the silicon wafer, and the surface is protected while grinding. When the grinding is completed, the protective tape is peeled off and the silicon wafer is washed. As the cleaning liquid, conventionally, trichlene, methacrene, alcohol,
Freon etc. were used.
（発明が解決しようとする問題点） しかし、上記洗浄液の場合、洗浄後のシリコンウエハ
をWIS（Wafer Inspection System）でチェックすると、
ウエハの表面の付着物が十分に除去されないという問題
を有しており、これによりIC製造後の信頼性に欠けてし
まうという問題があった。(Problems to be solved by the invention) However, in the case of the above cleaning liquid, if the silicon wafer after cleaning is checked by WIS (Wafer Inspection System),
There is a problem that the adhered substances on the surface of the wafer are not sufficiently removed, which causes a problem that reliability after the IC is manufactured is insufficient.
第１表に従来の洗浄液による洗浄後のウエハをWISで
検査した結果を示す。Table 1 shows the results of inspecting the wafer after cleaning with the conventional cleaning liquid by WIS.
この表を見ると明らかなように、いずれの洗浄液を用
いた場合でも、ウエハの付着物が多く存在していること
がわかる。なお、フレオンおよびトリクレンを用いた場
合、不純物の粒径が0.5μ以下の数が少ない値を示して
いるが、これは、実際には極めて多いため測定不能とな
ったためである。 As is clear from this table, it is clear that a large amount of wafer deposits are present regardless of which cleaning solution is used. When Freon and trichlene are used, the number of impurities having a particle size of 0.5 μ or less shows a small value, but this is because measurement is impossible because it is so large in practice.
本発明は上記した点に鑑みてなされたもので、ウエハ
研削後に不純物を十分に洗浄することのできるシリコン
ウエハの洗浄方法を提供することを目的とするものであ
る。The present invention has been made in view of the above points, and an object of the present invention is to provide a method for cleaning a silicon wafer, which can sufficiently clean impurities after wafer grinding.
（問題点を解決するための手段） 上記目的を達成するため本発明に係るシリコンウエハ
の洗浄方法は、ウエハの裏面研削時に粘着される保護テ
ープの糊材および洗浄液として、グリコソルブTM、ブチ
ルカルビトール、２エチルヘキシルアセテートのいずれ
かを用いることをその特徴とするものであり、ここで、
グリコソルブTM、ブチルカルビトールは、それぞれ三井
東圧（株）の商品名であり、グリコソルブTM、はトリエ
チレングリコールモノメチルエーテル、ブチルカルビト
ールは、ジエチレングリコールモノアルキルエーテルで
ある。さらに、好ましくは上記糊剤はアクリルエマルジ
ョン糊にブチルカルビトールおよび界面活性剤を添加し
たものを用い、洗浄液にグリコソルブTMを用い、さらに
好ましくは洗浄液に界面活性剤を添加する。(Means for Solving Problems) In order to achieve the above-mentioned object, a method for cleaning a silicon wafer according to the present invention includes: Glycosolve TM, butyl carbitol as a paste and a cleaning liquid for a protective tape that is adhered when the back surface of the wafer is ground. It is characterized by using any one of 2-ethylhexyl acetate, wherein:
Glycosolve ™ and butyl carbitol are trade names of Mitsui Toatsu Co., Ltd., Glycosolve ™ is triethylene glycol monomethyl ether, and butyl carbitol is diethylene glycol monoalkyl ether. Further, preferably, the sizing agent is an acrylic emulsion paste to which butyl carbitol and a surfactant are added, Glysolve ™ is used as the cleaning liquid, and more preferably, the surfactant is added to the cleaning liquid.
また、上記洗浄液を30〜150℃の温度に保持し、超音
波（150W）を１〜30分かけながら洗浄することが好まし
い。この場合に、洗浄液の温度が高いときは超音波をか
ける時間を短かく設定し、洗浄液の温度が低いときは長
い時間超音波をかけるようにする。Further, it is preferable that the cleaning liquid is maintained at a temperature of 30 to 150 ° C. and cleaned while applying ultrasonic waves (150 W) for 1 to 30 minutes. In this case, when the temperature of the cleaning liquid is high, the ultrasonic wave is applied for a short time, and when the temperature of the cleaning liquid is low, the ultrasonic wave is applied for a long time.
（実施例） 以下、本発明の実施例を説明する。(Example) Hereinafter, the Example of this invention is described.
保護テープの糊剤としてアクリルエマルジョン糊にグ
リコソルブTM、ブチルカルビトール、２エチルヘキシル
アセテートをそれぞれ混入し、さらに、界面活性剤を入
れたものを用い、洗浄液としてグリコソルブTM、ブチル
カルビトール、２エチルヘキシルアセテートを用い、洗
浄液の温度を40℃、超音波を10分という条件下でWISを
行なった結果を第２表に示す。また、第１図にNo.1〜N
o.6のウエハへの不純物の付着状態を示す。Glycosolve TM, butyl carbitol, and 2 ethylhexyl acetate were mixed in acrylic emulsion paste as a paste agent for the protective tape, and a surfactant was further added. Table 2 shows the results of WIS performed using the cleaning solution at a temperature of 40 ° C. and ultrasonic waves for 10 minutes. In addition, No. 1 to N in Fig. 1
o.6 shows the state of impurities attached to the wafer.
この結果によれば、単に界面活性剤のみで洗浄を行な
った場合に比べて、いずれもよい洗浄効果が得られるこ
とがわかる。中でも糊剤にブチルカルビトール、グリコ
ソルブTMを用い洗浄液にグリコソルブTMを用いたもの
と、糊剤および洗浄液ともに２エチルヘキシルアセテー
トを用いたものが良好であった。 According to this result, it can be seen that a good cleaning effect can be obtained in any case as compared with the case where cleaning is performed only with the surfactant. Among them, those using butyl carbitol and Glycosolve TM as the sizing agent and Glycosolve TM as the cleaning solution, and those using 2-ethylhexyl acetate for both the sizing agent and the cleaning solution were favorable.
しかし、２エチルヘキシルアセテートは強烈な臭気を
伴なう上に廃液処理が困難であり、糊剤にグリコソルブ
TMを添加した場合はテープ工程で糊剤が変色する。その
ため、糊剤にブチルカルビトール、洗浄液にグリコソル
ブTMを用いるのが最も好ましい。However, 2-ethylhexyl acetate has a strong odor, and it is difficult to treat the waste liquid.
If TM is added, the paste will change color during the tape process. Therefore, it is most preferable to use butyl carbitol as the sizing agent and Glycosolv ™ as the cleaning liquid.
また、洗浄液にグリコソルブTMを用い、この洗浄液の
温度と超音波をかける時間とが洗浄効果に与える影響を
検討した結果を第２図に示す。Fig. 2 shows the results of an examination of the effect of the temperature of the cleaning solution and the time of applying ultrasonic waves on the cleaning effect using Glycosolv ™ as the cleaning solution.
これによれば、洗浄液の温度を高くし、超音波を長時
間かけると洗浄効果が高まることがわかる。According to this, it is understood that the cleaning effect is enhanced by increasing the temperature of the cleaning liquid and applying ultrasonic waves for a long time.
以上述べたように本発明に係るシリコンウエハの洗浄
方法は、保護テープの糊剤および洗浄剤としてグリコソ
ルブTM、ブチルカルビトール、２エチルヘキシルアセテ
ートのいずれかを用いるようにしているので、洗浄効果
が高まり、ウエハに不純物が付着する量が著しく減少す
る。したがって、ウエハの信頼性が高まる等の効果が奏
する。As described above, in the method for cleaning a silicon wafer according to the present invention, any one of Glycosolv ™, butyl carbitol, and 2 ethylhexyl acetate is used as the adhesive and the cleaning agent for the protective tape, so that the cleaning effect is enhanced. The amount of impurities attached to the wafer is significantly reduced. Therefore, there are effects such as an increase in the reliability of the wafer.
第１図（ａ）（ｂ）（ｃ）（ｄ）（ｅ）（ｆ）はウエハ
への不純物の付着状態を示す説明図、第２図は洗浄液の
温度と超音波をかける時間とに対する洗浄効果の関係を
示す線図である。FIGS. 1 (a), (b), (c), (d), (e), and (f) are explanatory views showing the state of impurities adhering to the wafer, and FIG. 2 is the cleaning with respect to the temperature of the cleaning liquid and the time of applying ultrasonic waves. It is a diagram which shows the relationship of an effect.
Claims (4)
し、このシリコンウエハの裏面研削を行った後上記保護
テープを剥してシリコンウエハを洗浄するシリコンウエ
ハの洗浄方法において、上記保護テープ貼着用の糊剤お
よび上記洗浄用の洗浄液としてトリエチレングリコール
モノメチルエーテル、ジエチレングリコールモノアルキ
ルエーテル、２エチルヘキシルアセテートのいずれかを
用いることを特徴とするシリコンウエハの洗浄方法。1. A method of cleaning a silicon wafer, comprising: attaching a protective tape to the surface of a silicon wafer; grinding the back surface of the silicon wafer; then peeling the protective tape to wash the silicon wafer. 2. A method for cleaning a silicon wafer, characterized in that any one of triethylene glycol monomethyl ether, diethylene glycol monoalkyl ether, and 2 ethylhexyl acetate is used as the sizing agent and the cleaning liquid for cleaning.
チレングリコールモノメチルエーテル、ジエチレングリ
コールモノアルキルエーテル、２エチルヘキシルアセテ
ートのいずれかに更に界面活性剤を混入したものを用い
ることを特徴とする特許請求の範囲第１項に記載のシリ
コンウエハの洗浄方法。2. A paste containing the protective tape as described above, wherein any one of triethylene glycol monomethyl ether, diethylene glycol monoalkyl ether and 2 ethylhexyl acetate further mixed with a surfactant is used. The method for cleaning a silicon wafer according to item 1.
レングリコールモノアルキルエーテルに界面活性剤を混
入したものを用い、上記洗浄液としてトリエチレングリ
コールモノメチルエーテルを用いることを特徴とする特
許請求の範囲第１項に記載のシリコンウエハの洗浄方
法。3. A sizing agent for adhering the protective tape, comprising a mixture of diethylene glycol monoalkyl ether and a surfactant, and triethylene glycol monomethyl ether as the cleaning liquid. Item 5. A method for cleaning a silicon wafer according to item.
超音波をかけながらシリコンウエハを洗浄することを特
徴とする特許請求の範囲第１乃至第３項いずれかに記載
のシリコンウエハの洗浄方法。4. The cleaning solution is maintained at a temperature of 30 to 150 ° C.,
The method for cleaning a silicon wafer according to any one of claims 1 to 3, wherein the silicon wafer is cleaned while applying ultrasonic waves.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13442186A JPH0828341B2 (en) | 1986-06-10 | 1986-06-10 | Silicon wafer cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13442186A JPH0828341B2 (en) | 1986-06-10 | 1986-06-10 | Silicon wafer cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62291033A JPS62291033A (en) | 1987-12-17 |
| JPH0828341B2 true JPH0828341B2 (en) | 1996-03-21 |
Family
ID=15127993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13442186A Expired - Lifetime JPH0828341B2 (en) | 1986-06-10 | 1986-06-10 | Silicon wafer cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0828341B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01226586A (en) * | 1988-03-04 | 1989-09-11 | Yoshino Kogyosho Co Ltd | Rack cleaning method |
-
1986
- 1986-06-10 JP JP13442186A patent/JPH0828341B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62291033A (en) | 1987-12-17 |
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