JPS62287678A - Thermoelectric effect element - Google Patents
Thermoelectric effect elementInfo
- Publication number
- JPS62287678A JPS62287678A JP61132379A JP13237986A JPS62287678A JP S62287678 A JPS62287678 A JP S62287678A JP 61132379 A JP61132379 A JP 61132379A JP 13237986 A JP13237986 A JP 13237986A JP S62287678 A JPS62287678 A JP S62287678A
- Authority
- JP
- Japan
- Prior art keywords
- effect element
- thermal insulation
- thermoelectric effect
- thin plate
- insulation material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005676 thermoelectric effect Effects 0.000 title claims abstract description 24
- 239000006260 foam Substances 0.000 claims abstract description 8
- 239000012774 insulation material Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000012777 electrically insulating material Substances 0.000 claims description 2
- 238000005187 foaming Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 abstract description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 1
- 230000009257 reactivity Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
Landscapes
- Refrigerator Housings (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
産業上の利用分野
本発明は、冷蔵庫等に用いる熱電効果素子に関するもの
である。Detailed Description of the Invention 3. Detailed Description of the Invention Field of Industrial Application The present invention relates to a thermoelectric effect element used in refrigerators and the like.
従来の技術
近年、冷蔵庫等に用いられる熱電効果素子は、小型で性
能も改良されて来ている。BACKGROUND OF THE INVENTION In recent years, thermoelectric effect elements used in refrigerators and the like have become smaller and have improved performance.
以下、図面を参照しながら、上述した従来の熱電効果素
子について説明する。Hereinafter, the above-mentioned conventional thermoelectric effect element will be explained with reference to the drawings.
第３図から第４図は、従来の熱電効果素子を示すもので
ある。図ておいて、１は熱電効果素子であり、セラミッ
ク類の電気絶縁を有する２枚の厚さ１腸程度の薄板２と
その間にはさまれ、交互に電気的に直列にしかし、数賜
の間隔をあけて並べられたＮ型半導体３とＰ型半導体４
と、電気的に直列に並べられた上記Ｎ型半導体３とＰ型
半導体４の両端に取付けられたコード５より構成される
。3 to 4 show conventional thermoelectric effect elements. In the figure, 1 is a thermoelectric effect element, which is sandwiched between two ceramic electrically insulating thin plates 2 about one inch thick, and is electrically connected alternately in series. N-type semiconductor 3 and P-type semiconductor 4 arranged at intervals
and a cord 5 attached to both ends of the N-type semiconductor 3 and P-type semiconductor 4 electrically arranged in series.
前記Ｎ型半導体３、Ｐ型半導体４は、四角柱で、断面が
数鵡角、高さも数騙という小さなもので、電気的に直列
につなぎ、かつ薄板２に固定するため、はんだ６で上側
、下側を交互に結ばれている。The N-type semiconductor 3 and the P-type semiconductor 4 are small square prisms with a cross section of several squares and a height of several squares, and in order to be electrically connected in series and fixed to the thin plate 2, the upper side is connected with solder 6. , the lower sides are tied alternately.
以上の様に構成された熱電効果素子１ば、コードらに直
流電圧がかかった時、コード６がつながれている薄板２
側で、吸熱作用を起こし、反対側の薄板２側で発熱作用
を起こす。The thermoelectric effect element 1 constructed as described above, when a DC voltage is applied to the cords, the thin plate 2 to which the cord 6 is connected.
An endothermic action occurs on one side, and an exothermic action occurs on the opposite thin plate 2 side.
発明が解決しようとする問題点
しかしながら、上記のような構成では、厚さ１０鵬以下
の熱電効果素子１の片面で吸熱、片面で発熱作用が生ず
るため、発熱作用のある薄板２側から、吸熱作用のある
薄板２側へ、薄板２の間の空間を通り空気の対流や放射
により、熱が流れ、著しく、熱電効果素子の性能を落と
すという問題を有していた。Problems to be Solved by the Invention However, in the above configuration, heat absorption occurs on one side of the thermoelectric effect element 1 having a thickness of 10 mm or less, and heat generation occurs on the other side. Heat flows through the space between the thin plates 2 to the side of the thin plates 2 that have an effect due to air convection and radiation, resulting in a problem in that the performance of the thermoelectric effect element is significantly degraded.
本発明は、上記問題点に鑑み、発熱作用のある薄板２側
から、吸熱作用のある薄板２側へ、薄板２の間の空間を
通り、空気の対流や放射により熱が移動し、著しく熱電
効果素子が性能が低下するのを防ぐ事を目的とする。In view of the above-mentioned problems, the present invention has been developed in which heat is transferred from the thin plate 2 side that has a heat generating effect to the thin plate 2 side that has an endothermic effect through the space between the thin plates 2 due to air convection and radiation, resulting in a significant thermoelectric conversion. The purpose is to prevent the performance of the effect element from deteriorating.
問題点を解決するだめの手段
上記問題点を解決するために、本発明の熱電効果素子は
、２枚の薄板の間の空間に発泡性断熱材を充填するとい
う構成を備えたものである。Means for Solving the Problems In order to solve the above problems, the thermoelectric effect element of the present invention has a structure in which the space between two thin plates is filled with a foam heat insulating material.
作 用
本発明は、上記した構成によって、熱電効果素子が片面
で吸熱、片面で放熱作用を生じたとき、発熱作用のある
薄板側から、吸熱作用のある薄板側への熱の移動を、薄
板の間の空間に充填された発泡性断熱材によって低減し
、熱電効果素子の性能を向上させるものである。Effect of the Invention With the above-described configuration, when the thermoelectric effect element absorbs heat on one side and radiates heat on the other side, the present invention prevents the transfer of heat from the thin plate side that has the heat generating effect to the thin plate side that has the heat absorbing effect. The foamed heat insulating material filled in the space between the two improves the performance of the thermoelectric effect element.
実施例
以下、本発明の一実施例の熱電効果素子について、図面
を参照しながら説明する。EXAMPLE Hereinafter, a thermoelectric effect element according to an example of the present invention will be described with reference to the drawings.
第１図は、本発明の一実施例における熱電効果素子であ
る。従来例と同一構成については、同一番号を符してそ
の詳細な説明を省略する。FIG. 1 shows a thermoelectric effect element in one embodiment of the present invention. Components that are the same as those of the conventional example are designated by the same numbers and detailed description thereof will be omitted.
図において、７は、硬質ウレタンフオームやフェノール
フオーム等の発泡性断熱材であり、２枚の薄板２０間に
充填されている。In the figure, 7 is a foaming heat insulating material such as hard urethane foam or phenol foam, which is filled between two thin plates 20.
前記発泡性断熱材７は、特に、わずかなすき間において
も充填性が優れる様に、反応性は、ゲルタイムで９０秒
程度と、冷蔵庫等で用いられる汎用のものより、３０秒
弱遅くしてあり、熱伝導率は０．０１４０ （Ｋｃａｎ
／ｍｈｒ’Ｃ）程度の断熱性を有する。The foamable heat insulating material 7 has a gel time of about 90 seconds, which is less than 30 seconds slower than general-purpose materials used in refrigerators, etc., so that it has excellent filling properties even in small gaps. , the thermal conductivity is 0.0140 (Kcan
/mhr'C).
以上の様に、本実施例によれば、熱電効果素子１の２枚
の薄板２の間の空間に、発泡性断熱材７を充填すること
により、発熱作用ある薄板２側から、吸熱作用のある薄
板２側への熱の移動量が大幅に低減でき、低熱伝導率の
発泡性断熱材７を用いる程、熱電効果素子の性能が向上
する。As described above, according to this embodiment, by filling the space between the two thin plates 2 of the thermoelectric effect element 1 with the foaming heat insulating material 7, the heat absorbing effect is absorbed from the side of the thin plate 2 which has a heat generating effect. The amount of heat transferred to a certain thin plate 2 side can be significantly reduced, and the performance of the thermoelectric effect element improves as a foam heat insulating material 7 with a low thermal conductivity is used.
具体的には、外気温３０’Ｃで、入力２．９Ｖ 。Specifically, the outside temperature is 30'C and the input is 2.9V.
１０Ａの熱電効果素子１を働かせた場合の吸熱面と発熱
面の温度差で比較すると、従来４０°Ｃの温度差しか出
なかったのが、本考案の様に０．０１４０（ＫｃａＡ
／ｍｈｉｈ’ｃ）の発泡性断熱材７を薄板２の間の空間
に充填すると、４６°Ｃの温度差が得られ、また逆に、
温度差を一定にすれば、入力が５Ｗ低くできることがわ
かっている。Comparing the temperature difference between the heat-absorbing surface and the heat-generating surface when a 10A thermoelectric effect element 1 is operated, the conventional temperature difference was only 40°C, but the present invention has a temperature difference of 0.0140 (KcaA).
/mhih'c) is filled into the space between the thin plates 2, a temperature difference of 46°C is obtained, and conversely,
It is known that if the temperature difference is kept constant, the input power can be lowered by 5W.
また、発泡断熱材７自体電気絶縁性を有するため、機能
上の問題は全くない。Moreover, since the foamed heat insulating material 7 itself has electrical insulation properties, there is no functional problem at all.
発明の効果
以上の様に本発明は、電気絶縁材料でできた２枚の薄板
と、その間にはさまれ、交互に電気的に直列に並べられ
たＮ型半導体とＰ型半導体とその両端に取りつけられた
コードと前記薄板とＮ型半導体、Ｐ型半導体の間の空間
に充填された発泡性断熱材からなる熱電効果素子である
ので、発熱作用を生じる薄板側から吸熱作用を生じる薄
板側への薄板の間の空間を通る熱の移動量が大幅に低減
でき、熱電効果素子の性能が向上する。Effects of the Invention As described above, the present invention consists of two thin plates made of an electrically insulating material, an N-type semiconductor and a P-type semiconductor sandwiched between them and electrically arranged in series alternately, and a semiconductor at both ends thereof. Since this is a thermoelectric effect element made of a foamed heat insulating material filled in the space between the attached cord, the thin plate, the N-type semiconductor, and the P-type semiconductor, the temperature changes from the thin plate side that generates heat to the thin plate side that generates heat absorption. The amount of heat transferred through the space between the thin plates can be significantly reduced, improving the performance of the thermoelectric effect element.
第１図は本発明の一実施例の熱電効果素子の斜視図、第
２図は第１図の［−１’線における断面図、第３図は従
来の熱電効果素子の斜視図、第４図は第３図のｎ−ｎ’
線における断面図である。
２・・・・・・薄板、３−・・・・・Ｎ型半導体、４・
・・・・Ｐ型半導体、６・・・・はんだ、７・・・・・
・発泡性断熱材。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名ｇ
−−−＋よんた
７−−−−￥？ａ ノー：！ｌｌ−町（」；町１２材第
３ 図
？FIG. 1 is a perspective view of a thermoelectric effect element according to an embodiment of the present invention, FIG. 2 is a sectional view taken along the line [-1' in FIG. The figure is n-n' in Figure 3.
FIG. 2... Thin plate, 3-... N-type semiconductor, 4...
...P-type semiconductor, 6...Solder, 7...
・Foam insulation material. Name of agent: Patent attorney Toshio Nakao and 1 other person
−−−+Yonta 7−−−−￥? a No:! ll-machi (''; Machi 12 materials Figure 3?
Claims (1)
、交互に電気的に直列に並べられたＮ型半導体とＰ型半
導体とその両端に取付けられたコードと、前記薄板とＮ
型半導体、Ｐ型半導体の間の空間に充填された発泡性断
熱材からなる熱電効果素子。Two thin plates made of electrically insulating material, an N-type semiconductor and a P-type semiconductor sandwiched between them and electrically arranged in series alternately, a cord attached to both ends, and the thin plate and N
A thermoelectric effect element made of a foam insulation material filled in the space between a P-type semiconductor and a P-type semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61132379A JPS62287678A (en) | 1986-06-06 | 1986-06-06 | Thermoelectric effect element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61132379A JPS62287678A (en) | 1986-06-06 | 1986-06-06 | Thermoelectric effect element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62287678A true JPS62287678A (en) | 1987-12-14 |
Family
ID=15080005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61132379A Pending JPS62287678A (en) | 1986-06-06 | 1986-06-06 | Thermoelectric effect element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62287678A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0455051A2 (en) * | 1990-04-20 | 1991-11-06 | Matsushita Electric Industrial Co., Ltd. | Thermoelectric semiconductor having a porous structure deaerated into a vacuum and thermoelectric panel |
| JP2010135620A (en) * | 2008-12-05 | 2010-06-17 | Sumitomo Metal Mining Co Ltd | Thermoelectric conversion module, and generator using the same |
| JP2012038980A (en) * | 2010-08-09 | 2012-02-23 | Fujitsu Ltd | Thermoelectric conversion module and manufacturing method of the same |
| JPWO2014064755A1 (en) * | 2012-10-22 | 2016-09-05 | 富士通株式会社 | Semiconductor device, semiconductor device manufacturing method, and thermoelectric power generation electronic device |
-
1986
- 1986-06-06 JP JP61132379A patent/JPS62287678A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0455051A2 (en) * | 1990-04-20 | 1991-11-06 | Matsushita Electric Industrial Co., Ltd. | Thermoelectric semiconductor having a porous structure deaerated into a vacuum and thermoelectric panel |
| USRE35441E (en) * | 1990-04-20 | 1997-02-04 | Matsushita Electrical Industrial Co., Ltd. | Thermoelectric semiconductor having a porous structure deaerated in a vacuum and thermoelectric panel using p-type and n-type thermoelectric semiconductors |
| EP0834930A2 (en) * | 1990-04-20 | 1998-04-08 | Matsushita Electric Industrial Co., Ltd. | Thermoelectric semiconductor having a porous structure deaerated into a vacuum and thermoelectric panel using p-type and n-type thermoelectric semiconductors |
| EP0834930A3 (en) * | 1990-04-20 | 1998-04-29 | Matsushita Electric Industrial Co., Ltd. | Thermoelectric semiconductor having a porous structure deaerated into a vacuum and thermoelectric panel using p-type and n-type thermoelectric semiconductors |
| JP2010135620A (en) * | 2008-12-05 | 2010-06-17 | Sumitomo Metal Mining Co Ltd | Thermoelectric conversion module, and generator using the same |
| JP2012038980A (en) * | 2010-08-09 | 2012-02-23 | Fujitsu Ltd | Thermoelectric conversion module and manufacturing method of the same |
| JPWO2014064755A1 (en) * | 2012-10-22 | 2016-09-05 | 富士通株式会社 | Semiconductor device, semiconductor device manufacturing method, and thermoelectric power generation electronic device |
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