JPS62287624A - 半導体素子のエッチング装置 - Google Patents
半導体素子のエッチング装置Info
- Publication number
- JPS62287624A JPS62287624A JP13003386A JP13003386A JPS62287624A JP S62287624 A JPS62287624 A JP S62287624A JP 13003386 A JP13003386 A JP 13003386A JP 13003386 A JP13003386 A JP 13003386A JP S62287624 A JPS62287624 A JP S62287624A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- pure water
- semiconductor element
- tank
- work holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Weting (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13003386A JPS62287624A (ja) | 1986-06-06 | 1986-06-06 | 半導体素子のエッチング装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13003386A JPS62287624A (ja) | 1986-06-06 | 1986-06-06 | 半導体素子のエッチング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62287624A true JPS62287624A (ja) | 1987-12-14 |
JPH0439224B2 JPH0439224B2 (enrdf_load_stackoverflow) | 1992-06-26 |
Family
ID=15024485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13003386A Granted JPS62287624A (ja) | 1986-06-06 | 1986-06-06 | 半導体素子のエッチング装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62287624A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4109495A1 (de) * | 2021-06-23 | 2022-12-28 | Infineon Technologies Bipolar GmbH & Co. KG | Verfahren und vorrichtung zur herstellung einer randstruktur eines halbleiterbauelements |
-
1986
- 1986-06-06 JP JP13003386A patent/JPS62287624A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4109495A1 (de) * | 2021-06-23 | 2022-12-28 | Infineon Technologies Bipolar GmbH & Co. KG | Verfahren und vorrichtung zur herstellung einer randstruktur eines halbleiterbauelements |
US12342581B2 (en) | 2021-06-23 | 2025-06-24 | Infineon Technologies Bipolar Gmbh & Co. Kg | Method and device for producing an edge structure of a semiconductor component |
Also Published As
Publication number | Publication date |
---|---|
JPH0439224B2 (enrdf_load_stackoverflow) | 1992-06-26 |
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