JPS62287421A - Apparatus for producing protective film for magnetic disk - Google Patents
Apparatus for producing protective film for magnetic diskInfo
- Publication number
- JPS62287421A JPS62287421A JP13032786A JP13032786A JPS62287421A JP S62287421 A JPS62287421 A JP S62287421A JP 13032786 A JP13032786 A JP 13032786A JP 13032786 A JP13032786 A JP 13032786A JP S62287421 A JPS62287421 A JP S62287421A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic disk
- protective film
- organic compound
- plasma
- diphenyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 47
- 230000001681 protective effect Effects 0.000 title claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 239000012159 carrier gas Substances 0.000 claims abstract description 8
- 235000010290 biphenyl Nutrition 0.000 claims abstract description 7
- 239000004305 biphenyl Substances 0.000 claims abstract description 7
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000007787 solid Substances 0.000 claims abstract description 7
- 150000002894 organic compounds Chemical class 0.000 claims description 17
- 238000006116 polymerization reaction Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 4
- -1 diphenyl compound Chemical class 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- BSZXAFXFTLXUFV-UHFFFAOYSA-N 1-phenylethylbenzene Chemical compound C=1C=CC=CC=1C(C)C1=CC=CC=C1 BSZXAFXFTLXUFV-UHFFFAOYSA-N 0.000 claims description 2
- 150000001491 aromatic compounds Chemical class 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 230000008022 sublimation Effects 0.000 claims description 2
- 238000000859 sublimation Methods 0.000 claims description 2
- JBPBZQRUTGSRAC-UHFFFAOYSA-N 1-benzyl-4-(4-benzylphenyl)benzene Chemical group C=1C=C(C=2C=CC(CC=3C=CC=CC=3)=CC=2)C=CC=1CC1=CC=CC=C1 JBPBZQRUTGSRAC-UHFFFAOYSA-N 0.000 claims 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 10
- 230000005294 ferromagnetic effect Effects 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 9
- 229910052786 argon Inorganic materials 0.000 abstract description 5
- 125000006267 biphenyl group Chemical group 0.000 abstract description 4
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 2
- 239000010935 stainless steel Substances 0.000 abstract description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052721 tungsten Inorganic materials 0.000 abstract description 2
- 239000010937 tungsten Substances 0.000 abstract description 2
- 229910018104 Ni-P Inorganic materials 0.000 abstract 1
- 229910018536 Ni—P Inorganic materials 0.000 abstract 1
- 238000007664 blowing Methods 0.000 abstract 1
- 229920006254 polymer film Polymers 0.000 abstract 1
- 239000010408 film Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 7
- 239000000178 monomer Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical class FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001296 polysiloxane Chemical class 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Polymerisation Methods In General (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔産業上の利用分野〕
本発明は強磁性金属薄膜を磁気層とする磁気記録媒体の
製造装置に係り、特に磁気ディスクなどの磁気記録層上
に保護膜を設ける装置に関するものである。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an apparatus for manufacturing a magnetic recording medium having a magnetic layer made of a ferromagnetic metal thin film, and particularly relates to a manufacturing apparatus for a magnetic recording medium having a magnetic layer such as a magnetic disk. The present invention relates to a device for providing a protective film thereon.
一般に強磁性金属薄膜を磁気記録層とする磁気記録体は
金属ディスク基体或はチーブ基体上に強磁性金属材料を
スパッタリングするとか或は樹脂マトリックスに強磁性
金属材料を分散させたエマルジョンをスピンコントール
することによシ製造しているものである。これらの強磁
性金属薄膜は高密度記録にすぐれた特性を有するが、ヘ
ッドの接触によって摩耗や損鴎を受は易くヘッドの接触
圧によって磁気特性の変化が見られるという欠点がある
。In general, magnetic recording materials with a ferromagnetic metal thin film as a magnetic recording layer are produced by sputtering a ferromagnetic metal material onto a metal disk substrate or a chip substrate, or by spin-controlling an emulsion in which a ferromagnetic metal material is dispersed in a resin matrix. Especially those that are manufactured. Although these ferromagnetic metal thin films have excellent characteristics for high-density recording, they have the disadvantage that they are susceptible to abrasion and damage due to contact with the head, and their magnetic properties change depending on the contact pressure of the head.
このため強磁性金属薄膜の表面に有機化合物をプラズマ
重合法によりえた重合体による保良膜を形成することに
より耐久性を改善することが提案されているが、通常の
プラズマ重合に用すられるモノマー例えばフッ素、シリ
コーン第七ツマ−は気体又は液体であるため表面の潤滑
性、表面の耐摩耗性、基板との接着性に優れた保護膜を
容易にうることが出来なかった。For this reason, it has been proposed to improve durability by forming a protective film on the surface of a ferromagnetic metal thin film using a polymer obtained by applying an organic compound to the plasma polymerization method. Since fluorine and silicone salts are gases or liquids, it has not been possible to easily form a protective film with excellent surface lubricity, surface abrasion resistance, and adhesion to the substrate.
本発明者等はかかる現状に鑑み鋭意研究を行った結果、
先に磁気ディスクの保護膜を形成させるにあたり、昇華
性固体有機化合物の共存下でキャリアーガスのプラズマ
を発生させることによシ上記有機化合物が優れた性能を
有する重合健保ａ膜として磁気ディスク本体の表面に析
出する方法を提案した。The present inventors conducted intensive research in view of the current situation, and as a result,
First, when forming a protective film on the magnetic disk, a carrier gas plasma is generated in the coexistence of a sublimable solid organic compound. A method of depositing on the surface was proposed.
本発明はこの保護膜を具体的につるための装置を開兄し
たものである。The present invention has developed a device specifically for hanging this protective film.
〔問題点を解決するための手段〕
不発明装置は磁気ディスク本体の表面に常温常圧下で固
体状態の有機化合物をプラズマ重合法により得た重合体
の保護膜を被着する装置において真空容器内て上記有機
化合物か高周波プラズマ領域にて被着する位置に磁気デ
ィスク本体を設け、その上部に所望間隔をおいて該有機
化合物を投入した加熱体及びキャリアーガス流出口を１
１ｎ次配設し且つ真空容器の底部ＩＦＪ空排気口を取付
は肢有機化合物を加熱体にて加熱蒸発せしめて磁気ディ
スク本体の表面に保護膜を被着せしめることを特徴とす
るものである。[Means for solving the problem] The uninvented apparatus is an apparatus for coating the surface of a magnetic disk body with a protective film of a polymer obtained by plasma polymerization of a solid organic compound at room temperature and normal pressure. A magnetic disk body is provided at a position where the organic compound is deposited in a high-frequency plasma region, and a heating element into which the organic compound is introduced and a carrier gas outlet are placed on top of the magnetic disk body at desired intervals.
The IFJ air exhaust port is installed at the bottom of the vacuum container, and the organic compound is heated and evaporated with a heating element to form a protective film on the surface of the magnetic disk body.
本発明装置において磁気ディスクとしては基体となるア
ルミニウム基板上にＮ１−Ｐなどの化学メッキ層を被着
せしめて研磨仕上げなどの後処理音節した後、その表面
に物理的又は化学的方法により強磁性金属薄膜を形成す
るものである。In the device of the present invention, the magnetic disk is made by depositing a chemical plating layer such as N1-P on an aluminum substrate, which serves as the base, and applying post-processing such as polishing, and then applying ferromagnetic properties to the surface by physical or chemical methods. It forms a metal thin film.
又本発明装置において固体の有機化合物とは。Also, what is a solid organic compound in the device of the present invention?
常温、常圧下で固体を呈し昇華性を有する低融点化合物
であり、その融点は示差燕が：」定偏光顕徴λλ観察に
よシ知ることが出来る。その値は通常２０℃〜２５０℃
を有し望ましくは４０℃〜１５０℃に分布するものであ
る。具体的な化合物としてはナフタレ／、アントラセン
、ノフェニルメタン、ジフェニルエタン、ビフェニール
ジベンジルｆＺ ト（Ｄ芳香族化合物、ジフェニル化合
物である。又これらの化合物から誘導される昇華性化合
物の銹導体も含まれる。It is a low-melting compound that is solid at room temperature and pressure and has sublimation properties, and its melting point can be determined by observing the differential polarization characteristic λλ. Its value is usually 20℃~250℃
It has a temperature distribution of preferably 40°C to 150°C. Specific compounds include naphthalene/, anthracene, nophenylmethane, diphenylethane, biphenyl dibenzyl fZ (D aromatic compound, diphenyl compound).Also includes rust conductors of sublimable compounds derived from these compounds. It will be done.
これらの有機化合物を真空容器内で加熱したり或は常温
に保持したまま気化させるための加熱体としては例えば
蒸着用金属テートを使用するものであり、この金Ｍ、）
’−）は気化した有機化合物が均一に真空容器内に分布
するように中ぶたを取付けたタイプのものが望ましい。For example, metal tate for vapor deposition is used as a heating element to heat these organic compounds in a vacuum container or to vaporize them while keeping them at room temperature, and this gold M,)
'-) is preferably of the type with an inner lid attached so that the vaporized organic compound is uniformly distributed within the vacuum container.
なお蒸着用金ｊＡフど一ト内に投入する有機化合物は被
着面積１ｃＭＬ２あたり通常０．０３Ｑ〜０．１７１１
１Ｓ’の量である。Note that the organic compound introduced into the gold jA fudo for deposition is usually 0.03Q to 0.1711Q per 1cML2 of deposition area.
The amount is 1S'.
又本発明装置におけるキャリアーガスとはアルゴン、窒
素などの不活性ガスあるいは水素であり、必要に応じて
ＣＦ４． ＣＨ４，Ｃ２Ｈ４などの炭化水素系ガスを混
合してもよい。これらのガスを真空容器内に導入し１０
〜１．５Ｔｏｒｒの範囲に保持する。The carrier gas in the apparatus of the present invention is an inert gas such as argon or nitrogen, or hydrogen, and if necessary, CF4. Hydrocarbon gases such as CH4 and C2H4 may be mixed. These gases are introduced into a vacuum container and 10
-1.5 Torr.
このキャリアーがスの流出口は磁気ディスクの表面に直
接該ガスが接触せしめることなく、均一な保！ｉＭをつ
るため該がスを均−拡散後に磁気ディスク表面に到達す
ることが必要である。従ってキャリアーガス流出口と真
空排気口との配置は相互に隔離しておくことが必要であ
り、この両者の間に有機化合物を気化するための加熱体
とプラズマ領域並に磁気ディスクを順次配設するもので
ある。このような配置によりたとえ、昇華性物質が一時
的に上方に拡散しても、プラズマ領域に引き寄せられる
結果、高圧側電極表面に載置した磁気ディスク表面には
、均一な重合膜が得られる。The outlet of this carrier gas does not allow the gas to come into direct contact with the surface of the magnetic disk, ensuring uniformity. In order to hang iM, it is necessary for the gas to reach the surface of the magnetic disk after being uniformly diffused. Therefore, it is necessary to separate the carrier gas outlet and the vacuum exhaust port from each other, and between them, a heating element, a plasma region, and a magnetic disk are sequentially arranged to vaporize the organic compound. It is something to do. With such an arrangement, even if the sublimable substance temporarily diffuses upward, it will be attracted to the plasma region, resulting in a uniform polymerized film on the surface of the magnetic disk placed on the high voltage side electrode surface.
プラズマ領域においた磁気ディスクの配置は、モノマー
蒸発源から拡散してくるモノマー蒸気が、直ｍ、ｆ”イ
スク面に照射されるようにすることが重要であり、電極
下部、電極間等だ、これを配置することは好ましくなｈ
ｏ
プラズマ重合膜と、モノマー蒸発源は通常、４０％〜２
００′Ｘ、の間隔を保つことが望ましい。It is important to arrange the magnetic disk in the plasma region so that the monomer vapor diffused from the monomer evaporation source is irradiated directly onto the surface of the disk, such as under the electrodes, between the electrodes, etc. It is preferable to place this h
o Plasma polymerized membrane and monomer evaporation source are usually 40% to 2
It is desirable to maintain a spacing of 00'X.
本発明装置において高周波によシプラズマ重合を行う場
合、高周波出力と電極面積との大きさからエネルギー密
度を０．３〜４Ｗ／（７）２の範囲に入るよう設定する
。又この電源は通常１３．５６ ＭＨｚの短波長域の発
振周波数をもち可変容量タイプのマツチングがックスを
備えてｈる。When plasma polymerization is performed using high frequency in the apparatus of the present invention, the energy density is set to fall within the range of 0.3 to 4 W/(7)2 based on the high frequency output and the electrode area. This power supply usually has an oscillation frequency in the short wavelength range of 13.56 MHz and is equipped with a variable capacitance type matching box.
又プラズマ重合の反応時についてもモノマーの種類、該
モノマーのガス分圧、電極配置、温度によって左右され
るものであり、これを規定することが出来ないが、通常
５〜１５０ｓ・Ｃ望ましくは１０〜７０ ｓｅｃにて所
望の膜厚の保護膜がえられるよう【反応条件及びモノマ
ー量を選定する。The reaction time of plasma polymerization also depends on the type of monomer, gas partial pressure of the monomer, electrode arrangement, and temperature, and cannot be specified, but it is usually 5 to 150 s・C, preferably 10 [Reaction conditions and monomer amount are selected so that a protective film of desired thickness can be obtained in ~70 sec.
而して本発明装置により得られる保護膜の厚さは通常１
００Ｘ〜１０００Ｘ程度のものであり、膜厚が薄すぎる
と耐久性のものが得られず、又膜厚が厚すぎるとスイー
シングロスが大きくなシ記録と読み出し特性に悪影響を
もたらすものであると共に場合によりては強固な膜がえ
られないことも考えられる。Therefore, the thickness of the protective film obtained by the device of the present invention is usually 1
00X to 1000X, and if the film thickness is too thin, durability cannot be obtained, and if the film thickness is too thick, the swissing loss will be large, which will have an adverse effect on recording and readout characteristics. In some cases, it may not be possible to obtain a strong film.
又プラズマ重合時には電極周辺と磁気ディスクとの温度
上昇ならびに、スノ々ツタ現象がおこるが、磁気ディス
クの保唾膜を得ようとする場合、高温であることが望ま
しく付加的に、前処理としてス／４’ツタ処理を施こす
と共に予備的及び積極的に加熱することが有効である。In addition, during plasma polymerization, the temperature around the electrode and the magnetic disk increases, and the splatter phenomenon occurs, but when trying to obtain a saliva-retentive film on the magnetic disk, high temperatures are desirable, and additionally, a pretreatment process such as rinsing is required. /4' It is effective to apply ivy treatment and to preliminarily and actively heat the material.
なお本発明装置は主に磁気ディスクの製造に適用するも
のであるが、その他磁気記録体例えば磁気テープ、フロ
ッピーディスク、磁気カート０、皇どの製造にも有効に
適用する。Although the apparatus of the present invention is mainly applied to the manufacture of magnetic disks, it can also be effectively applied to the manufacture of other magnetic recording media such as magnetic tapes, floppy disks, magnetic carts, etc.
（１）第１図に示す如くペルツヤ３の内部に直径１３０
嶌の２枚のステンレス円板電極２１．２Ｂを約３０鬼間
隔に対向せしめて固定し、高圧側電極メ弘上面にＮ１−
Ｐ板の基板に強磁性金属薄膜を形成した５インチの８気
デイスク１０を載置し、磁気ディスク１０の上部約５０
九の位置に小型タングステンケートの内部に２０１ｎ９
のジフェニールを投入した加熱源１を固定した。又加熱
源１の上方的５０％の位置にベルジャ３の壁と対向させ
てアルゴンガスが吹き出す導入口８を固定した。火にペ
ルジー！３の底部の基板４に真空排気口５Ｂを設は真空
ボン７″５゛Ａに接続した。(1) As shown in Figure 1, there is a diameter of 130 mm inside the pertu
Fix the two stainless steel disc electrodes 21.2B facing each other at a distance of approximately 30 mm, and connect N1- to the upper surface of the high voltage side electrode mechanism.
A 5-inch 8-metal disk 10 with a ferromagnetic metal thin film formed on a P plate substrate is mounted, and about 50 mm above the magnetic disk 10 is placed.
201n9 inside the small tungsten cage at the 9th position
The heating source 1 containing diphenyl was fixed. Further, an inlet 8 through which argon gas is blown out was fixed at a position 50% above the heating source 1, facing the wall of the bell jar 3. Persie on fire! A vacuum exhaust port 5B was provided on the substrate 4 at the bottom of the substrate 3 and connected to a vacuum bomb 7''5''A.
而して加熱源８を電源１１によシ８０℃に加熱せしめて
ジフェニールを蒸発し、ガス導入口８よりアルゴンガス
を吹き込み、高周波プラズマ（約４００Ｗ）を４ Ｑ
ｓｅａ間発生させて磁気ディスク１０面に４７０Ｘの保
護膜を被着せしめた。Then, the heating source 8 was heated to 80°C by the power supply 11 to evaporate the diphenyl, argon gas was blown through the gas inlet 8, and high frequency plasma (approximately 400 W) was generated.
A 470X protective film was applied to the 10th surface of the magnetic disk.
（２） 実施例（１）における平板電極に替えて第２
図に示す如くスパイラル型′１極２Ａ’ｍ２Ｂ’を使用
し、被着対象となる磁気ディスク１０は２ Ａ’電極板
上に配置して実施例（１）と同様に本発明装置による保
護膜を被着せしめた。(2) A second electrode was used instead of the flat electrode in Example (1).
As shown in the figure, a spiral type '1 pole 2A'm2B' is used, and the magnetic disk 10 to be adhered is placed on the 2A' electrode plate, and a protective film is applied by the apparatus of the present invention in the same manner as in Example (1). was coated with.
（３）実施例（１）における平板電極及び磁気ディスク
を替えて第３区に示す如く磁気ディスク１０を縦型に配
置し、その周囲にス・ぐイラル型電極２Ｂ’にてとり囲
み、その他は実施例（１）と同様にして磁気ディスクの
両面に保護膜を被着した。(3) The flat plate electrode and magnetic disk in Example (1) are replaced, and the magnetic disk 10 is arranged vertically as shown in Section 3, and is surrounded by a spiral type electrode 2B', etc. A protective film was applied to both sides of the magnetic disk in the same manner as in Example (1).
（４）実施例（１）における平型電極に替えて第４図に
示す如く縦置に配置した電極２Ｂ“、２Ａ′′との間に
磁気ディスク１０を設け、その他は実施例（１）と同様
にして磁気ディスクの両面に保り膜を被着した。(4) Instead of the flat electrode in Example (1), a magnetic disk 10 is provided between the vertically arranged electrodes 2B'' and 2A'' as shown in FIG. 4, and the rest is Example (1). A protective film was applied to both sides of the magnetic disk in the same manner as described above.
本発明装置によれば強磁性金属薄膜上にプラズマ重合法
による保護膜を形成するにおｈて、有用であシ且つ耐久
性に優れた磁気記録体を製造しつる等極めて有用である
。The apparatus of the present invention is extremely useful in forming a protective film on a ferromagnetic metal thin film by plasma polymerization, and in producing a magnetic recording medium that is useful and has excellent durability.
第１図は本発明磁気ディスク用保護膜の製造装置の１例
を示す概略説明図、第２図乃至第４図は本発明磁気ディ
スク用保護膜の創造装置における磁気ディスクと電極と
の配置状態を示す概略説明図である。
１・・・加熱源１．？Ａ Ｉ ２Ｂ 、 ２Ａ’、 ２
Ｂ’、 ２Ａ〃。
２ Ｂ’・・・電極、３・・・真空容器、４・・・底板
、５Ａ・・・真空ポンプ、５Ｂ・・・排気口、８・・・
ガス流出口、１０・・・磁気ディスク、６・・・真空計
、９・・・キャリアーガス源。FIG. 1 is a schematic explanatory diagram showing an example of the apparatus for producing a protective film for a magnetic disk of the present invention, and FIGS. 2 to 4 show the arrangement of magnetic disks and electrodes in the apparatus for producing a protective film for a magnetic disk of the present invention. FIG. 1...Heating source 1. ? A I 2B, 2A', 2
B', 2A〃. 2 B'... Electrode, 3... Vacuum container, 4... Bottom plate, 5A... Vacuum pump, 5B... Exhaust port, 8...
Gas outlet, 10... Magnetic disk, 6... Vacuum gauge, 9... Carrier gas source.
Claims (2)
有機化合物をプラズマ重合法により得た重合体の保護膜
を被着する装置において、真空容器内に上記有機化合物
が高周波プラズマ領域にて被着する位置に磁気ディスク
を設置し、その上部に所望間隔毎に該有機化合物を投入
した加熱体及びキャリアーガス流出口を順次設け且つ真
空容器の底部に真空排気口を取付け、該有機化合物を加
熱体にて加熱蒸発せしめて磁気ディスクの表面に保護膜
を被着せしめることを特徴とする磁気ディスク用保護膜
の製造装置。(1) In a device that coats the surface of a magnetic disk with a protective film of a polymer obtained by plasma polymerization of an organic compound in a solid state at room temperature and normal pressure, the organic compound is placed in a vacuum container in a high-frequency plasma region. A magnetic disk is installed at the position where the organic compound is to be deposited, a heating element containing the organic compound and a carrier gas outlet are sequentially provided at desired intervals on the top of the disk, and a vacuum exhaust port is attached to the bottom of the vacuum container to remove the organic compound. A manufacturing device for a protective film for a magnetic disk, characterized in that the protective film is deposited on the surface of a magnetic disk by heating and evaporating it with a heating element.
を有し、２０℃〜２５０℃の低融点化合物であり、ナフ
タリン、アントラセン、ジフェニルメタン、ジフェニル
エタン、ジベンジルビフェニールなどの芳香族化合物、
ジフェニル化合物からなることを特徴とする特許請求の
範囲第１項記載の磁気ディスク用保護膜の製造装置。(2) Organic compounds that are solid at room temperature and normal pressure are compounds that have sublimation properties and a low melting point of 20°C to 250°C, and include aromatic compounds such as naphthalene, anthracene, diphenylmethane, diphenylethane, and dibenzylbiphenyl. ,
2. The apparatus for producing a protective film for a magnetic disk according to claim 1, wherein the protective film is made of a diphenyl compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13032786A JPH0740356B2 (en) | 1986-06-06 | 1986-06-06 | Magnetic disk protective film manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13032786A JPH0740356B2 (en) | 1986-06-06 | 1986-06-06 | Magnetic disk protective film manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62287421A true JPS62287421A (en) | 1987-12-14 |
| JPH0740356B2 JPH0740356B2 (en) | 1995-05-01 |
Family
ID=15031700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13032786A Expired - Lifetime JPH0740356B2 (en) | 1986-06-06 | 1986-06-06 | Magnetic disk protective film manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0740356B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5093173A (en) * | 1989-01-13 | 1992-03-03 | Hitachi, Ltd. | Magnetic disc comprising a substrate of an amorphous glass continuous phase dispersed with crystal particles which produce a structurally defined surface on the substrate |
-
1986
- 1986-06-06 JP JP13032786A patent/JPH0740356B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5093173A (en) * | 1989-01-13 | 1992-03-03 | Hitachi, Ltd. | Magnetic disc comprising a substrate of an amorphous glass continuous phase dispersed with crystal particles which produce a structurally defined surface on the substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0740356B2 (en) | 1995-05-01 |
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