JPS6383920A - Production of protective film for magnetic recording medium - Google Patents
Production of protective film for magnetic recording mediumInfo
- Publication number
- JPS6383920A JPS6383920A JP22798886A JP22798886A JPS6383920A JP S6383920 A JPS6383920 A JP S6383920A JP 22798886 A JP22798886 A JP 22798886A JP 22798886 A JP22798886 A JP 22798886A JP S6383920 A JPS6383920 A JP S6383920A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- vapor
- vessel
- magnetic recording
- monomer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 title claims abstract description 17
- 230000005291 magnetic effect Effects 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010408 film Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000007787 solid Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 238000006116 polymerization reaction Methods 0.000 claims description 10
- 230000005294 ferromagnetic effect Effects 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims 2
- 150000001491 aromatic compounds Chemical class 0.000 claims 1
- 239000000178 monomer Substances 0.000 abstract description 31
- 239000007789 gas Substances 0.000 abstract description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052786 argon Inorganic materials 0.000 abstract description 5
- 150000004945 aromatic hydrocarbons Chemical class 0.000 abstract description 4
- 238000009833 condensation Methods 0.000 abstract description 4
- 230000005494 condensation Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- -1 antho2cene Chemical compound 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QWUWMCYKGHVNAV-UHFFFAOYSA-N 1,2-dihydrostilbene Chemical group C=1C=CC=CC=1CCC1=CC=CC=C1 QWUWMCYKGHVNAV-UHFFFAOYSA-N 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- WDECIBYCCFPHNR-UHFFFAOYSA-N chrysene Chemical compound C1=CC=CC2=CC=C3C4=CC=CC=C4C=CC3=C21 WDECIBYCCFPHNR-UHFFFAOYSA-N 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- ZMYIIHDQURVDRB-UHFFFAOYSA-N 1-phenylethenylbenzene Chemical group C=1C=CC=CC=1C(=C)C1=CC=CC=C1 ZMYIIHDQURVDRB-UHFFFAOYSA-N 0.000 description 1
- XWVOEFLBOSSYGM-UHFFFAOYSA-N 4-morpholinyl-(3,4,5-trimethoxyphenyl)methanone Chemical compound COC1=C(OC)C(OC)=CC(C(=O)N2CCOCC2)=C1 XWVOEFLBOSSYGM-UHFFFAOYSA-N 0.000 description 1
- 241001120493 Arene Species 0.000 description 1
- FMMWHPNWAFZXNH-UHFFFAOYSA-N Benz[a]pyrene Chemical compound C1=C2C3=CC=CC=C3C=C(C=C3)C2=C2C3=CC=CC2=C1 FMMWHPNWAFZXNH-UHFFFAOYSA-N 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- SLGBZMMZGDRARJ-UHFFFAOYSA-N Triphenylene Natural products C1=CC=C2C3=CC=CC=C3C3=CC=CC=C3C2=C1 SLGBZMMZGDRARJ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JRXXLCKWQFKACW-UHFFFAOYSA-N biphenylacetylene Chemical group C1=CC=CC=C1C#CC1=CC=CC=C1 JRXXLCKWQFKACW-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- QSQIGGCOCHABAP-UHFFFAOYSA-N hexacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC6=CC=CC=C6C=C5C=C4C=C3C=C21 QSQIGGCOCHABAP-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000013212 metal-organic material Substances 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 238000011197 physicochemical method Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 125000005580 triphenylene group Chemical group 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- JAIHDOVRCZNXDU-UHFFFAOYSA-N violanthrene Chemical compound C12=C3C4=CC=C2C2=CC=CC=C2CC1=CC=C3C1=CC=C2CC3=CC=CC=C3C3=CC=C4C1=C32 JAIHDOVRCZNXDU-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、強磁性金属薄膜の磁気記録層上に形成する保
護膜の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing a protective film formed on a magnetic recording layer of a ferromagnetic metal thin film.
(従来の技術)
従来、強磁性金属薄膜を磁気記録層とする磁気記録媒体
は、金属ディスク基板あるいは、テープ基板上に強磁性
金属材料を真空蒸着、又はメッキによるか、或は樹脂マ
) IJタックス強磁性金属材料を分散させたポリマー
エマルジョンをスピンコードすることによシ製造されて
いる。この強磁性金属膜は、高密度記録に優れた特性を
有するが、ヘッドとの接触によって摩耗や損失を受けや
すく、また空気中の水分によシ酸化され特性変化を起こ
しやすいという欠点を有するものであった。従って強磁
性金属薄膜上に種々の保護膜を設けることにより摩擦の
大きいこと、耐食性を改善することが実施されている。(Prior Art) Conventionally, magnetic recording media having a ferromagnetic metal thin film as a magnetic recording layer have been produced by vacuum deposition or plating of a ferromagnetic metal material on a metal disk substrate or tape substrate, or by resin coating (IJ). It is manufactured by spin-coding a polymer emulsion in which a ferromagnetic metallic material is dispersed. Although this ferromagnetic metal film has excellent characteristics for high-density recording, it has the drawback that it is easily subject to wear and loss due to contact with the head, and is easily oxidized by moisture in the air, causing changes in characteristics. Met. Therefore, attempts have been made to increase friction and improve corrosion resistance by providing various protective films on ferromagnetic metal thin films.
特に最近、プラズマ重合を利用して樹脂の保護膜を形成
することが、行なわれている。しかし、このプラズマ重
合による重合膜を保護膜として形成するにはモノマーと
して常温常圧で気体或は液体の物質が使用され且つ得ら
れた保護膜の性能は表面潤滑性と強じん性に劣るもので
あった。また、従来から行なわれているカーゼンのスパ
ッタ膜は、ある程度の初期特性は侵れているが、長期使
用時において耐蝕性、摩擦係数について劣るものであっ
た。Particularly recently, plasma polymerization has been used to form resin protective films. However, in order to form a polymerized film by plasma polymerization as a protective film, a substance that is gaseous or liquid at room temperature and normal pressure is used as a monomer, and the performance of the obtained protective film is poor in surface lubricity and toughness. Met. Further, although the conventional Kazen sputtered film has lost some of its initial properties, it has been inferior in corrosion resistance and friction coefficient during long-term use.
(発明が解決しようとする問題点)
本発明は、かかる現状を考えて、鋭意研究を行なった結
果、保獲膜として耐久性、耐摩耗性、表面潤滑性に優れ
たプラズマ重合膜が得られ、有用な磁気記録媒体を開発
したものである。(Problems to be Solved by the Invention) The present invention, as a result of intensive research in consideration of the current situation, provides a plasma polymerized film that is excellent in durability, wear resistance, and surface lubricity as a retention film. , developed a useful magnetic recording medium.
(問題点を解決するための手段)
本発明方法を磁気ディスクの製造に適用すると、まず基
体となるアルミニウム基板上にN1−Pなどの化学メッ
キ層を密着せしめ、研磨仕上げなどの後処理をほどこし
たのち、その表面に物理化学的手法によシ強磁性体金属
薄膜を形成する。つぎに、これをプラズマ重合装置にセ
ットする。(Means for Solving the Problems) When the method of the present invention is applied to the manufacture of magnetic disks, a chemical plating layer such as N1-P is first adhered to an aluminum substrate as a base, and a post-processing such as polishing is applied. Afterwards, a ferromagnetic metal thin film is formed on the surface using a physicochemical method. Next, this is set in a plasma polymerization apparatus.
常温常圧下で、固体を呈する昇華性物質は従来、プラズ
マ重合の原料モノマーの対象とは考えられておらず、液
体モノマーをキャリヤーガスとともに反応容器に送り込
んで重合膜を得ることもあったが、主として気体が原料
として使用されてきた。Sublimable substances that are solid at room temperature and pressure have not traditionally been considered as raw material monomers for plasma polymerization, and polymerized films have sometimes been obtained by sending liquid monomers together with carrier gas into a reaction vessel. Gases have mainly been used as raw materials.
本発明方法は、昇華性のある固体モノマーを密閉容器中
で加熱することにより、定常的に気化させることによシ
従来からの気体モノマーと同様の手法で取扱うことが可
能となった。In the method of the present invention, a sublimable solid monomer is constantly vaporized by heating it in a closed container, so that it can be handled in the same manner as conventional gaseous monomers.
さらに、昇華性固体モノマーを用いたプラズマ重合膜は
硬い材料で表面摩擦が小さく、金属面との接着も強固で
磁気ディスク保ia膜として有用なことが分った。この
ような背景のもとに、本発明方法は予め、加熱できる密
閉容器に入れた昇華性固体モノマーを所望の温度に保持
し、これを加熱保温された導管により途中凝結を起こさ
せることなく反応容器内の所望位置に配置したガス導入
ノズルから供給される。本発明方法にて用いる加熱配管
は、例えば、電気ヒータをまわシに配置したもの、ある
いは加熱流体を介在させて、反応容器内においてもノズ
ル直前まで均一な保温を行なうことが必要である。この
ときの気相モノマーの加熱温度はモノマーの融点以上で
あることが望ましく、本発明方法にて用いる固体モノマ
ーは顕著な昇華性を示すことが必要であシ、七ツマ−の
融点以下に加熱しても十分目的が達せられる。従って、
通常の加熱温度は融点を境にして±10℃の範囲に保つ
ことが望ましい。さらに望ましくは、蒸気の凝縮温度以
下に加熱保温することが好ましい。Furthermore, it was found that a plasma polymerized film using a sublimable solid monomer is a hard material, has low surface friction, and has strong adhesion to metal surfaces, and is useful as a magnetic disk retainer film. Based on this background, the method of the present invention involves first holding a sublimable solid monomer in a heatable airtight container at a desired temperature, and allowing the monomer to react without causing condensation during the process through a heat-insulated conduit. The gas is supplied from a gas introduction nozzle placed at a desired position within the container. The heating piping used in the method of the present invention requires, for example, an electric heater arranged around the piping or a heating fluid interposed therebetween to maintain uniform heat even in the reaction vessel up to just before the nozzle. The heating temperature of the gas phase monomer at this time is desirably higher than the melting point of the monomer, and the solid monomer used in the method of the present invention must exhibit remarkable sublimation properties, and must be heated to a temperature lower than the melting point of the monomer. Even so, the purpose can be achieved. Therefore,
It is desirable to keep the normal heating temperature within ±10°C of the melting point. More desirably, it is preferable to heat and maintain the temperature below the condensation temperature of steam.
而して加熱密閉容器に固体モノマーを充てんするとき、
モノマーの粒状物、又は粉体をそのまま容器に充てんす
ることによっても十分、目的を達することができるが円
滑にモノマーの固体から気体への転換を行なおうとする
ときには、金属の多孔質体あるいは無機物の多孔質体を
同時に、容器内に共存させることにより、良好な結果が
得られる。望ましくは前記多孔質担体に、固体モノマー
を共存させる方法としては用いる多孔質担体に吸着して
いるガスを除去した後、モノマーの液相、又は、気相と
接触させることが不純物となるガスを反応系に介在させ
ない効果が得られるため、用いる固体モノマーを真空中
で前記、多孔質に含浸することが有用である。例えば、
無機多孔質担体としてモレキエラーシープスに固体上ノ
マーヲ含没する際は、真空中あるいは十分高温で、前記
モノマー融体にモレキ為う−シーブスを投入することに
より、目的を達成することができる。こうして得られた
固相モノマーの含浸された多孔体を例えば加熱容器に充
てんすることによシ安定したグロセスを行うことが出来
る。Therefore, when filling a heated sealed container with solid monomer,
Filling a container with granular or powdered monomer can also achieve the desired purpose, but if you want to smoothly convert the monomer from a solid to a gas, it is best to use a porous metal or inorganic material. Good results can be obtained by coexisting these porous bodies in the container at the same time. Desirably, the porous carrier is made to coexist with a solid monomer by removing the gas adsorbed on the porous carrier and then bringing the gas into contact with the liquid phase or gas phase of the monomer to remove the gas that becomes an impurity. It is useful to impregnate the solid monomer to be used in the porous structure in a vacuum, since the effect of not intervening in the reaction system can be obtained. for example,
When a solid polymer is impregnated into a molecular sieve as an inorganic porous carrier, the purpose can be achieved by introducing the molten sieve into the monomer melt in a vacuum or at a sufficiently high temperature. . By filling, for example, a heating container with the porous body impregnated with the solid phase monomer thus obtained, stable growth can be performed.
又被着面と、モノマーガス供給ノズルとの位置関係は、
プラズマの発生方法、電極形状反応容器の形状、ガス流
量など、装置固有の条件によって変るとともあるが、本
発明で用いるモノマ一種の特徴として供給ノズルと被着
面の間に、モノマーの流れをさえぎるものを介在させな
いことが望ましい。Also, the positional relationship between the adhered surface and the monomer gas supply nozzle is as follows:
This may vary depending on the specific conditions of the device, such as the plasma generation method, electrode shape, reaction vessel shape, gas flow rate, etc., but one characteristic of the monomer used in the present invention is that the monomer flow is controlled between the supply nozzle and the deposition surface. It is desirable that there be no obstructions.
本発明方法において、使用する昇華性有機化合物として
は、常温常圧で固相を呈するものであり具体的には、ナ
フタレン、アント2セン、テトラセン、ペンタセン、ヘ
キサセン、ペリレン、7エナントレン、クリセン、トリ
フェニレン、ピレン。In the method of the present invention, the sublimable organic compounds used are those that exhibit a solid phase at room temperature and normal pressure, and specifically include naphthalene, antho2cene, tetracene, pentacene, hexacene, perylene, 7-enanthrene, chrysene, and triphenylene. , Piren.
ベンゾピレン、ビオラントレン、コロネン、オパレン等
の芳香族炭化水素或はその誘導体、或はゾフェニール、
ジフェニルメタン、ジベンジル、トリフェニルメタン、
ジフェニルエチレン、ジフェニルアセチレン、ターフェ
ニル等の脂肪族芳香族炭化水素(アレーン)或はその誘
導体である。Aromatic hydrocarbons or derivatives thereof such as benzopyrene, violanthrene, coronene, opalene, or zophenyl,
diphenylmethane, dibenzyl, triphenylmethane,
These are aliphatic aromatic hydrocarbons (arenes) such as diphenylethylene, diphenylacetylene, and terphenyl, or derivatives thereof.
これらの有機化合物の単独或は、混合物を加熱容器に入
れて気化させ、しかるのちこれを凝縮させることなく反
応容器に導びいてプラズマ重合させる。この場合アルゴ
ン、ヘリウム、窒素などの不活性ガスとの共存下でこれ
らのガスのグラズマ雰囲気で重合を行なうものである。These organic compounds alone or as a mixture are placed in a heating container and vaporized, then introduced into a reaction container without condensation and subjected to plasma polymerization. In this case, polymerization is carried out in the presence of an inert gas such as argon, helium, or nitrogen in a glazma atmosphere of these gases.
高周波により、プラズマ重合を行なう場合、高周波の出
力と電極面積との関係から、電極の供給エネルギー密度
を0.2〜4W/(X” 、望ましくは0.5〜3W/
(X”の範囲に入るようにする。高周波電源の出力を3
0〜500W、望ましくは100〜450Wに保つ。な
お、高周波電源は、通常、13.56 MHzの発振周
波数であるが、特にこの周波数に限定されることなく直
流からマイクロ波までの周波数であってもよい。When performing plasma polymerization using high frequency, the energy density supplied to the electrode should be 0.2 to 4 W/(X'', preferably 0.5 to 3 W/
(Make sure that it is within the range of
Keep it at 0-500W, preferably 100-450W. Note that the high frequency power source normally has an oscillation frequency of 13.56 MHz, but is not particularly limited to this frequency, and may have a frequency from direct current to microwave.
また、プラズマ重合するときのペルジャー内の圧力は0
.005Torr 〜3Torr 、望ましくは0.0
1〜1.5Torrの間に保つことが良く、反応時間は
数秒から300 sec 、望ましくは10 sec
〜100 sec間に、所望の膜厚を得ることができる
ようにする。本発明方法にて得た保護膜の厚さは50〜
1000Xの範囲のものを対象とする。なお1本発明方
法は、主として、磁気ディスクの製造に好適なものであ
るが、その他の磁気記録媒体例えば、磁気テープ、フロ
ッピーディスク、磁気カードなどの製造にも適用される
。Also, the pressure inside the Pelger during plasma polymerization is 0.
.. 005 Torr to 3 Torr, preferably 0.0
It is best to maintain the temperature between 1 and 1.5 Torr, and the reaction time is from several seconds to 300 sec, preferably 10 sec.
It is possible to obtain the desired film thickness within ~100 sec. The thickness of the protective film obtained by the method of the present invention is 50~
Targets objects in the 1000X range. The method of the present invention is mainly suitable for manufacturing magnetic disks, but can also be applied to manufacturing other magnetic recording media such as magnetic tapes, floppy disks, and magnetic cards.
(実施例)
実施例(1)〜(6)
図面に示す如く真空容器1内に直径130 Illのグ
ラズマ発生平板高周波対向電極6,7及び電極6の表面
にメモリーディスクとして5インチのハードディスク4
を載置する。真空容器内にモノマー供給ノズル5及びキ
ャリヤーガスとしてアルゴン供給ノズル8を夫々設置し
、その内部を真空ポンプ14にて真空にした。(Example) Examples (1) to (6) As shown in the drawing, in the vacuum chamber 1, there were glazma-generating flat plate high-frequency counter electrodes 6, 7 with a diameter of 130 Ill, and a 5-inch hard disk 4 as a memory disk on the surface of the electrode 6.
Place. A monomer supply nozzle 5 and an argon supply nozzle 8 as a carrier gas were installed in a vacuum container, and the inside thereof was evacuated using a vacuum pump 14.
而してモノマーとしてジベンジル2009−を内容積2
00eCのステンレス製容器2内に密閉しこれを予め1
0 nHgの高真空に排気し内圧0.8に?/♂にし
た後、ステンレス容器2の外周にヒーター11を取付け
60±1℃に保持した。Therefore, dibenzyl 2009- as a monomer has an internal volume of 2
It is sealed in a stainless steel container 2 at 00eC and preheated to 1
Evacuate to a high vacuum of 0 nHg and reduce the internal pressure to 0.8? /♂, a heater 11 was attached to the outer periphery of the stainless steel container 2 to maintain the temperature at 60±1°C.
このモノマーを昇華せしめてガス化し、これを加熱用配
管3及び流量計9を介して前記モノマー供給ノズル5よ
シ供給した。This monomer was sublimated and gasified, and was supplied to the monomer supply nozzle 5 via the heating pipe 3 and the flow meter 9.
又一方キャリャガスとしてアルコ0ンガス12を配管及
び流量計10を介して常時一定値(20ccZ分)に保
持してアルゴンガス供給ノズル8より供給すると共に高
周波電源13と高周波対向電極6.7と接続し、13.
56 MHzで出力200Wのプラズマを該電極の周囲
に発生させた。On the other hand, an argon gas 12 as a carrier gas is constantly maintained at a constant value (20 ccZ) through piping and a flow meter 10, and is supplied from an argon gas supply nozzle 8, and connected to a high frequency power source 13 and a high frequency counter electrode 6.7. , 13.
A plasma with a power of 200 W at 56 MHz was generated around the electrode.
斯くシて第1表に示す如くノズル5よりのモノマー蒸気
の供給量及び反応時間を変えながら磁気記録層の表面に
種々の厚さのプラズマ重合保護膜を被着形成せしめ、夫
々の膜厚についてC8Sサイクル回数を測定して耐久性
を比較試験した。その結果は第1表に併記した通りであ
る。Thus, as shown in Table 1, plasma polymerized protective films of various thicknesses were formed on the surface of the magnetic recording layer while varying the amount of monomer vapor supplied from the nozzle 5 and the reaction time, and the thickness of each film was determined. Durability was compared and tested by measuring the number of C8S cycles. The results are also listed in Table 1.
又、本発明方法と比較するだめにカーデン電頂によるス
パッタ膜をほぼ同一の膜厚に被着し、これらについても
同様にCSSサイクル回数を測定した。In addition, in order to compare with the method of the present invention, sputtered films using Kaden capacitors were deposited to approximately the same film thickness, and the number of CSS cycles was similarly measured for these films as well.
なお膜厚の測定は接触式測定方法のタリステップ装置に
より行った。Note that the film thickness was measured using a Talystep device using a contact measurement method.
第 1 表
上表から明らかな如く、本発明方法によるプラズマ重合
保護膜による磁気ディスクは耐久性に浸れていることが
認められた。As is clear from Table 1, the magnetic disks with the plasma polymerized protective film formed by the method of the present invention were found to be highly durable.
実施例(7)
和光純薬製モレキーラーシーブス(10i孔径)100
pに対し、実施例1〜6で用いたジベンジル(融点52
℃)を30F溶融しながら含浸し、しかるのち、冷却し
たものを約200ccのステンレス容器に密閉光てんし
、この容器のまわりに60Wのヒータを取付けて実施例
1と同じ条件で、磁気ディスク保護膜を被着形成した。Example (7) Molekiller sieves manufactured by Wako Pure Chemical Industries (10i pore diameter) 100
p, dibenzyl used in Examples 1 to 6 (melting point 52
℃) while melting at 30F, and then cooled and sealed in a stainless steel container of about 200 cc. A 60 W heater was attached around the container to form a magnetic disk protective film under the same conditions as in Example 1. was deposited.
ディスク全面にわたって均一な膜厚が得られ、安定した
プラズマ重合プロセスが確保された。A uniform film thickness was obtained over the entire surface of the disk, ensuring a stable plasma polymerization process.
(効果)
以上詳述した如く本発明方法によれば操作簡単にして耐
摩耗性に優れた保護膜を形成しうる等工業上極めて有用
なものである。(Effects) As described in detail above, the method of the present invention is extremely useful industrially, as it can easily operate and form a protective film with excellent abrasion resistance.
図面は本発明磁気記録媒体用保護膜の製造方法を示すた
めの装置の概略説明図である。
1・・・ペルジャー、2・・・容器、3・・・モノマー
供給配管、4・・・メモリーディスク、5・・・モノマ
ー供給ノズル、6,7・・・高周波対向電極、8・・・
キャリアガス供給ノズル、9.10・・・流景計、1ノ
・・・ヒーター、12・・・キャリアガス、13・・・
高周波電源、14・・・真空ポンプ。The drawing is a schematic explanatory diagram of an apparatus for illustrating a method of manufacturing a protective film for a magnetic recording medium according to the present invention. DESCRIPTION OF SYMBOLS 1... Pel jar, 2... Container, 3... Monomer supply piping, 4... Memory disk, 5... Monomer supply nozzle, 6, 7... High frequency counter electrode, 8...
Carrier gas supply nozzle, 9.10... Stream meter, 1 No.... Heater, 12... Carrier gas, 13...
High frequency power supply, 14...vacuum pump.
Claims (2)
製造する際、該強磁性体薄膜の上に保護膜を製造する方
法において、反応容器内に常温常圧で固体の昇華性芳香
族化合物の蒸気を予め加熱して導入せしめこれをプラズ
マ重合し、薄膜として被着することを特徴とする磁気記
録媒体用保護膜の製造方法。(1) When manufacturing a magnetic recording medium in which a ferromagnetic metal thin film is adhered to a substrate, in a method of manufacturing a protective film on the ferromagnetic thin film, a solid sublimable aroma is placed in a reaction vessel at room temperature and pressure. 1. A method for manufacturing a protective film for a magnetic recording medium, which comprises introducing a vapor of a group compound by heating it in advance, subjecting it to plasma polymerization, and depositing it as a thin film.
き、多孔質担体に、前記化合物を吸着又は含浸し、これ
を加熱することにより得られる蒸気を用いることを特徴
とする特許請求の範囲第1項記載の磁気記録媒体用保護
膜の製造方法。(2) When generating vapor of a solid sublimable aromatic compound, the vapor obtained by adsorbing or impregnating a porous carrier with the compound and heating the same is used. 2. A method for producing a protective film for a magnetic recording medium according to item 1.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22798886A JPS6383920A (en) | 1986-09-29 | 1986-09-29 | Production of protective film for magnetic recording medium |
US07/036,791 US4769281A (en) | 1986-04-15 | 1987-04-10 | Magnetic recording medium and method of manufacturing the same |
KR870003571A KR870010492A (en) | 1986-04-15 | 1987-04-14 | Magnetic recording medium and its manufacturing method |
DE8787105572T DE3766872D1 (en) | 1986-04-15 | 1987-04-15 | MAGNETIC RECORDING MEDIUM AND METHOD FOR THE PRODUCTION THEREOF. |
EP87105572A EP0243798B1 (en) | 1986-04-15 | 1987-04-15 | Magnetic recording medium and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22798886A JPS6383920A (en) | 1986-09-29 | 1986-09-29 | Production of protective film for magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6383920A true JPS6383920A (en) | 1988-04-14 |
Family
ID=16869404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22798886A Pending JPS6383920A (en) | 1986-04-15 | 1986-09-29 | Production of protective film for magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6383920A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5778632A (en) * | 1980-10-30 | 1982-05-17 | Sekisui Chem Co Ltd | Manufacture of magnetic recording medium |
-
1986
- 1986-09-29 JP JP22798886A patent/JPS6383920A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5778632A (en) * | 1980-10-30 | 1982-05-17 | Sekisui Chem Co Ltd | Manufacture of magnetic recording medium |
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