JPS62282437A - Rapid heating and cooling device for semiconductor wafer treatment - Google Patents

Abstract

PURPOSE:To rapidly heat up or cool down wafers as well as to maintain the wafers at a uniform temperature by a method wherein two infrared ray lamps, orthogonally intersecting with each other opposing to a pair of bell jars, are arranged and two nozzles to be used for blowing of cooling gas, crossing at right angle with each other, are provided on one surface and other surface of the wafer arranged in a chamber. CONSTITUTION:When infrared ray lamps 71 and 72 are lighted up, as a chamber 3 has a short distance between the upper and the lower sides and the infrared lamps 71 and 72 are arranged in close vicinity to the upper and the lower sides of a wafer 5, the wafer is heated up quickly. Also, as the infrared ray lamps 71 and 72 are arranged at right angle with each other, the wafer 5 can be heated up to a uniform temperature on the whole surface, and also the temperature distribution of the wafer 5 can be controlled two-dimensionally by regulating the power applied to the infrared ray lamps 71 and 72. When a cooling control device 14 is operated and the cooling gas such as helium and the like is blown against the upper and the lower surfaces of the wafer from nozzles 61 and 62, the whole surface of the wafer 5 can be cooled uniformly, because the nozzles 61 and 62 are crossed at right angle with each other.

Description

Detailed Description of the Invention 3. Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a rapid heating and cooling device for processing semiconductor wafers, which is particularly suitable for large-diameter devices.

((21E US technology) Rapid heating and cooling technology has made remarkable progress in the past few years as a useful process technology for MO8LSI, and infrared lamp heating has been attracting attention from an early stage as one of the most advanced methods.

A conventional rapid heating and cooling device using this infrared lamp is a quartz round tube (in the case of processing in a high-purity atmosphere, it is preferable to use a round A from the top for mechanical strength to perform vacuum displacement). A wafer is arranged along the tube axis in a wafer processing chamber consisting of a round tube, and infrared edge lamps are arranged along the outer wall of the round tube and facing the upper and lower surfaces of the wafer.

(Problem to be solved by the invention) However, recent semiconductor wafers are 61 inches, 8
According to the above-mentioned conventional equipment, as large diameters such as inches are becoming popular.

Is it inconvenient that the distance between the upper and lower heaters is too close and the heating capacity is reduced? Accompany. In addition, the wasted space in the wafer processing chamber increases, which increases its heat capacity, making it difficult to quickly heat and cool the chamber, and reducing the time required to create various atmospheres, including vacuum, for wafer processing. This is accompanied by the inconvenience of a decrease in speed.

< Means for solving t', i illumination point) The present invention aims to solve the above-mentioned disadvantages of the conventional apparatus. A chamber is formed, infrared lamps are arranged facing each other and orthogonal to each other in the pair of bell jars, and cooling gas spray nozzles are arranged at right angles to one side and the other side of the wafer placed in the chamber, respectively. It is characterized by having been established.

(Example) Practical examples of the present invention will be explained below with reference to the drawings.

In the figure, (1+) (b) is a quartz bell jar of the same shape, (
For example, 2 units are made up of 5 members (2t) (2zl (2xl (2xl)
The bell jar (11) (h) is formed by stacking J (2s), and the bell jar (11) (h) is formed by stacking the five members <21) to (26).
When it is repeated, its edges are clamped and fixed by the members,
The wafer processing chamber (3) is entirely formed together with the member (23).

A quartz wafer holder (4) is disposed in the center of the chamber (3), and upper and lower symmetrical devices close to the wafer (5) placed on the holder (4) are each provided with, for example, Four cooling gas/atmospheric gas nozzles (6I) and (62) are installed perpendicularly to each other. For example, nine infrared lamps (71) and (72) parallel to each other and lamp houses (8I) and (82) are arranged above and below the bell jar (1 and (12)), respectively. ) and (2I) respectively.
2) are arranged perpendicular to each other.

The chamber (3) is connected to a high vacuum exhaust device 0 through holes (91) and (9t) formed in the S material (23), respectively.
0 and 1 connected to the waste gas treatment equipment aian, and the nozzle (
6I) and the nozzle (62) are connected to the member (2I) and the nozzle (62).
3) is connected to the gas mixer α3 and the cooling control device α→, which are switch-connected to each other via the hole Q2″f.

The infrared lamps (7I) and (72) arranged above and below the bell jars (11) and (12) are connected to an AC power source by valving the transformer α9 and the output 109, and the output device is connected to the PID Controller αη and Himahi Multi-Program 2
It is connected to the 7m2 system controller (L'J), and the output of the thermocouple chain placed on the wafer (5) is input to the multi-2'lograma [phase].

In the figure (21+) (2h) is one member (24) and (22)
A hot air exhaust pipe that exchanges room temperature air introduced from the outside through the hole (A) with hot air generated by the infrared lamp (7+) (72). The heat resistance of Belljar (11) and (12) is high 19, which not only increases the cooling rate during cooling and improves productivity, but also brings it close to the cold wall conditions.

Thus, the infrared lamps (71) and (h)t of this example
``When lit, chamber (3) has a short distance between the top and bottom;
As a result, the infrared lamps (71) (72) are attached to the wafer (5).
Since the wafers (7) are placed close to each other above and below the wafer (7), the wafer (7) is rapidly heated. In addition, infrared lamp (71) and (7
t) are arranged orthogonally.

The wafer (5) is heated to a uniform temperature of 7 JIl over its entire surface.
The temperature distribution of the wafer (!11) can be adjusted in two dimensions by adjusting the power applied to the infrared lamps (71) and (72). Saze, Nozu/'(6+) and (6
When a cooling gas such as helium is sprayed onto the upper and lower surfaces of the wafer (5) from the nozzles (61) and (62), which are perpendicular to each other, the entire surface of the wafer (5) is uniformly cooled.

In addition, the volume of the chamber (3) is minimized, resulting in heat damage. Since it can be made small, not only can the wafer (5) be cooled rapidly, but also a finger-toe atmosphere can be generated in a short time.

In the embodiment, a nozzle is shared for spraying the cooling gas and the atmospheric gas, but separate nozzles may be used.

(Effect of the invention) As explained above, according to the present invention.

It has effects such as being able to rapidly heat and cool the wafer and also making the temperature of the wafer uniform.

[Brief explanation of the drawing]

FIG. 1 is a side sectional view of one embodiment of the present invention, and FIG. 2 is a sectional view taken along line A--A of the embodiment shown in FIG. 1 connected to a cooling control device and the like. (1000g)...Bell jar (2)...Equipment defect (3)...Chamber (4)...Holder (5
)...Wafer (61) (6z)...Nozzle for spraying cooling gas and atmospheric gas (7+) (7z)...Infrared lamp patent applicant Shinku Riko Co., Ltd. Figure 1

Claims (1)

[Claims] A wafer processing chamber is formed by arranging a pair of bell gears facing each other, and infrared lamps are disposed facing each other and orthogonal to each other in the pair of bell gears, and are arranged on one side and the other side of the wafer placed in the chamber. A rapid heating and cooling device for semiconductor wafer processing, characterized in that cooling gas spray nozzles are arranged orthogonally to each other.