JPS62281332A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS62281332A JPS62281332A JP12412486A JP12412486A JPS62281332A JP S62281332 A JPS62281332 A JP S62281332A JP 12412486 A JP12412486 A JP 12412486A JP 12412486 A JP12412486 A JP 12412486A JP S62281332 A JPS62281332 A JP S62281332A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- resist pattern
- aluminium alloy
- alloy layer
- choline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000005530 etching Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 21
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229960001231 choline Drugs 0.000 claims abstract description 15
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 11
- 238000005260 corrosion Methods 0.000 abstract description 16
- 230000007797 corrosion Effects 0.000 abstract description 16
- 239000000460 chlorine Substances 0.000 abstract description 14
- 229910052801 chlorine Inorganic materials 0.000 abstract description 14
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 13
- 229910018182 Al—Cu Inorganic materials 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000007864 aqueous solution Substances 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 238000001459 lithography Methods 0.000 abstract description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 description 19
- 239000000956 alloy Substances 0.000 description 19
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000010949 copper Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 210000000988 bone and bone Anatomy 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000714 At alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔概要〕
アルミニウム（ＡＩ）合金層、例えばアルミニウム銅（
ＡＩ−Ｃｕ）合金層のバターニングに際し、通常ＡＩ単
体のときと同様に塩素（ＣＩ）系ガスを用いたドライエ
ツチングを行うが、このときＣｕｘＣＩｙの形で塩素骨
が残りその除去が困難であり、Ａｌ−Ｃｕ合金層のコロ
−ジョン（腐食）が発生する。その抑止のために、Ａｌ
−Ｃｕ層をパターニングした後、コリン、もしくはその
誘導体中に浸漬する方法を提起する。[Detailed description of the invention] 3. Detailed description of the invention [Summary] Aluminum (AI) alloy layer, for example aluminum copper (
When patterning the AI-Cu) alloy layer, dry etching is normally performed using chlorine (CI) gas as in the case of AI alone, but at this time, chlorine bones remain in the form of CuxCIy and are difficult to remove. , corrosion of the Al-Cu alloy layer occurs. To prevent this, Al
- A method is proposed in which the Cu layer is patterned and then immersed in choline or a derivative thereof.
本発明はコロ−ジョンの発生を抑制した、Ａ１合金層、
例えばＡｌ−Ｃｕ合金層のエツチング方法に関する。The present invention provides an A1 alloy layer that suppresses the occurrence of corrosion.
For example, it relates to a method of etching an Al--Cu alloy layer.
一般に半導体デバイスの配線層にはＡ１層、または珪素
（Ｓｉ）を数％混入したＡｌ−５Ａ合金層が用いられて
いるが、エレクトロマイグレーションにより配線層が消
滅することがある。Generally, an A1 layer or an Al-5A alloy layer mixed with several percent silicon (Si) is used for the wiring layer of a semiconductor device, but the wiring layer may disappear due to electromigration.
これを抑止するため、バイポーラデバイス、とくに高速
ロジック用大電流デバイスの配線層に、Ｃｕを２〜４％
混入したＡｌ−Ｃｕ合金層が用いられるようになった。To prevent this, 2-4% Cu is added to the wiring layer of bipolar devices, especially high-current devices for high-speed logic.
Mixed Al-Cu alloy layers have come into use.
Ｃｔ系ガスを用いたＡＩ、またはその合金のドライエツ
チングにおいて、残留塩素分によるＡＩ、またはその合
金のコロ−ジョンが問題となっている。In dry etching of AI or its alloy using Ct-based gas, corrosion of the AI or its alloy due to residual chlorine has become a problem.
つぎに、参考のためにコロ−ジョンの発生機構を考える
。Next, for reference, we will consider the mechanism by which corrosion occurs.
いま、エツチングガスのプラズマにより生成した塩素ラ
ジカルを０１″″で表すと、次式のように、ＡＩはＣげ
と反応してＡＩＣｈ 、あるいはＡ１□Ｃ１ａとなって
昇華することによりエツチングは進む。Now, if the chlorine radicals generated by the plasma of the etching gas are expressed as 01'', then as shown in the following equation, AI reacts with carbon and sublimates to become AICh or A1□C1a, and etching progresses.
八１＋Ｃ１° → ＡｌＣｌ、↑、 Ａｌ□Ｃ１６↑
。81+C1° → AlCl, ↑, Al□C16↑
.
このとき生じたＡｌＣ１，１等がエツチングされた４１
層の側壁やレジスト表面に付着したまま大気中に取り出
されると、大気中の水分と反応しての次式ように塩酸（
ｌ（Ｃ１）等を生じる。The AlC1,1 etc. generated at this time were etched 41
If it is taken out into the atmosphere while remaining attached to the side walls of the layer or the resist surface, it will react with moisture in the atmosphere and produce hydrochloric acid (
l(C1), etc.
ＡＩＣｈ ＋ＨｚＯ→１（Ｃ１，Ａｌ（０）１）！。AICh +HzO→1 (C1, Al(0)1)! .
そうすると、次式のようにＨＣｌ はＡＩと反応して、
またＡＩＣｈを生ずる。Then, HCl reacts with AI as shown in the following equation,
It also produces AICh.
Ａｌ＋ＨＣｌ−４ＡＩＣＩ、＋ Ｈ２↑。Al+HCl-4AICI, +H2↑.
このようにして反応は循環的に繰り返して行われ、コロ
−ジョンは際限なく進行してゆく。In this way, the reaction is repeated cyclically, and the corrosion progresses without limit.
そのため、通常のＡｌ、 Ａｌ−５ｉ合金、アルミニウ
ムチタン（ＡＩ−Ｔｉ）合金では、これらのドライエツ
チング後、つぎのような対策を行っている。For this reason, the following measures are taken after dry-etching ordinary Al, Al-5i alloy, and aluminum titanium (AI-Ti) alloy.
■ エツチング後、真空を破らないでレジストを剥離す
る。■ After etching, remove the resist without breaking the vacuum.
と（に、酸素（０□）と四弗化炭素（ＣＦａ）を用いた
μ波ダウンフローアフシングが有効である。For this, μ-wave downflow afsing using oxygen (0□) and carbon tetrafluoride (CFa) is effective.
これは、プラズマ発生室でμ波によりＱ、＋ ＣＦ４の
プラズマをつくり、活性種を試料室に導入してアッシン
グを行うもので、試料室には通常のりアクティブイオン
エツチング（ＲＩＥ）のようにイオンや電子を含まない
。従って被・エツチング物のこれらの衝撃による損傷が
なく、純粋に活性種によるアフシチングのみが行われる
。This involves creating Q, + CF4 plasma using μ waves in a plasma generation chamber, and introducing active species into the sample chamber to perform ashing. Does not contain electrons or electrons. Therefore, the object to be etched is not damaged by these impacts, and only afshitting is performed purely by the active species.
■ 熱窒素（）ｌｏｔ Ｎｚ）でブローした後、水洗す
る。■ After blowing with hot nitrogen (lot Nz), wash with water.
■ 水洗後、０□中で３５０℃でベーキングする。■ After washing with water, bake at 350℃ in 0□.
■ ＣＦ４ 、ＳＦ４ 、Ｃ）ＩＦ３等の弗素系ガスで
プラズマ処理をする。■ Perform plasma treatment with a fluorine-based gas such as CF4, SF4, or C)IF3.
この場合は、弗素プラズマにより生じた弗素ラジカル（
Ｆ“）が０１と置換し、Ａ１表面に安定なＡＩＦが生成
する。In this case, fluorine radicals (
F") replaces 01, and stable AIF is generated on the A1 surface.
ＡＩＦはＡｌＦ３の完全な形になるまで反応が進まない
途中の組成でも、水分と反応しない。AIF does not react with moisture, even at intermediate compositions where the reaction does not proceed to the complete form of AlF3.
■ Ｈ２でプラズマ処理をする。■ Perform plasma treatment with H2.
以上のような処理により、安定してコロ−ジョンを防ぐ
ことができる。By the above treatment, corrosion can be stably prevented.
しかしながら、Ａｌ−Ｃｕ合金、Ａｌ−Ｃｕ−５ｉ合金
等のエツチングではＣｕｘＣ１ｙＯ形で塩素骨が残り、
その除去が困難で、上記の処理を行ってもコロ−ジョン
が発生することがあった。However, when etching Al-Cu alloy, Al-Cu-5i alloy, etc., chlorine bones remain in the form of CuxC1yO.
It is difficult to remove it, and even if the above treatment is carried out, corrosion may occur.
そのために、パターニング後、硝酸（ＨＮＯり中に基板
を浸漬して残留塩素分を除去していた。To this end, after patterning, the substrate was immersed in nitric acid (HNO) to remove residual chlorine.
エレクトロマイグレーション防止のためにＣｕ等の重金
属を少量混合したＡ１合金のパターニングでは残留塩素
分の除去が困難で、コロ−ジョンが発生することがあっ
た。When patterning an A1 alloy mixed with a small amount of heavy metal such as Cu to prevent electromigration, it is difficult to remove residual chlorine and corrosion may occur.
また、そのためパターニングの終わった基板を）ＩＮＯ
，中に浸漬する方法があるが、ＨＮ（ｈは強酸であるた
めプロセスの自動化が困難である等の問題があった。Also, for that reason, the substrate after patterning)
There is a method of immersing it in HN (HN), but there are problems such as difficulty in automating the process because HN (h) is a strong acid.
Ｃ問題点を解決するための手段〕
第１図（１）〜（３）は本発明を工程順に説明する基板
断面図である。Means for Solving Problem C] FIGS. 1 (1) to (3) are cross-sectional views of a substrate explaining the present invention in the order of steps.
上記問題点の解決は、基板１上にアルミニウム合金層２
を被着し、その上にレジストパターン３を形成し、該レ
ジストパターン３をマスクにして該アルミニウム合金層
２をエツチングして該アルミニウム合金層のパターン２
Ａを形成し、該レジストパターン３を除去後、該基板（
１）をコリン、もしくはその誘導体中に浸漬する本発明
によるエツチング方法により達成される。The solution to the above problem is to provide an aluminum alloy layer 2 on the substrate 1.
A resist pattern 3 is formed thereon, and the aluminum alloy layer 2 is etched using the resist pattern 3 as a mask to form the pattern 2 of the aluminum alloy layer.
After forming A and removing the resist pattern 3, the substrate (
This is achieved by the etching method according to the present invention in which 1) is immersed in choline or a derivative thereof.
〔作用１
本発明者は、前記のコロ−ジョン防止のため種々な方法
を実験したが、本発明の方法がとくに顕著な効果がある
ことを見出した。[Effect 1] The present inventor has experimented with various methods for preventing the above-mentioned corrosion, and has found that the method of the present invention is particularly effective.
すなわち、重金属を少量混合したＡ１合金層、例えばＡ
ｌ−Ｃｕ合金層をパターニングした後、基板をコリン、
もしくはその誘導体中に浸漬すると、残留塩素分が極め
て少なくなることを螢光Ｘ線測定を用いて確かめ、かつ
コロ−ジョンが発生しないことを実験的に確かめた。That is, an A1 alloy layer mixed with a small amount of heavy metal, for example, A
After patterning the l-Cu alloy layer, the substrate was coated with choline,
It was confirmed using fluorescent X-ray measurement that the residual chlorine content was extremely reduced when the sample was immersed in a derivative thereof, and it was also confirmed experimentally that no corrosion occurred.
コリンの構造式を第２図に示す。（：ｕ、Ｃ１ｙはＣｕ
”ＣＩ−の形で結合しており、Ｃ１−はコリンのＯＨ−
より電気的陰性度が強いためＯＨ−に置換されることに
より、Ｃｕ、（Ｃ１ｙがコリン、もしくはその誘導体中
によく溶解されると考えられる。The structural formula of choline is shown in Figure 2. (:u, C1y is Cu
``It is bonded in the form of CI-, and C1- is the OH- of choline.
It is thought that Cu, (C1y) is well dissolved in choline or its derivatives by being substituted with OH- because of its stronger electronegativity.
本発明の実施例を第１図を用いて説明する。 An embodiment of the present invention will be described with reference to FIG.
第１図（１）において、基板１として表面に燐珪酸ガラ
ス（ＰＳＧ）層等の絶縁層を被着した珪素（Ｓｔ）基板
を用い、この上にＡＩ合金層２として厚さ８０００人の
ＡＩ−Ｃｕ（４％）層をスバ・７タ法で被着し、この土
に通常のりソグラフィを用いてレジストパターン３を形
成する。In FIG. 1 (1), a silicon (St) substrate with an insulating layer such as a phosphosilicate glass (PSG) layer deposited on the surface is used as the substrate 1, and an AI alloy layer 2 with a thickness of 8,000 layers is formed on this substrate. A layer of -Cu (4%) is applied using the Suba-Sata method, and a resist pattern 3 is formed on this soil using normal glue lithography.
第１図（２）において、ＲＩＥ法によりレジストパター
ン３をマスクにしてＡＩ合金層２をパターニングしてＡ
１合金層のパターン２Ａを形成する。In FIG. 1 (2), the AI alloy layer 2 is patterned using the RIE method using the resist pattern 3 as a mask.
A pattern 2A of one alloy layer is formed.
ＲＩＥは、エツチングガスとしてＣｈ （２４ＳＣＣＭ
）、Ｓ ｉＣ１＊ （４０５ＣＣＭ）を用い、これを０
．０２Ｔｏｒｒに減圧して周波数１３．５６ＭＨｚの電
力を２５０Ｗ ５分間印加して行った＠
第１図（３）において、基板１を真空を破らないで搬送
してμ波ダウンフローアフシャ中に置きアッシングした
。RIE uses Ch (24SCCM
), S iC1* (405CCM) and set it to 0
．． Ashing was carried out by reducing the pressure to 0.2 Torr and applying a power of 250 W at a frequency of 13.56 MHz for 5 minutes @ In Figure 1 (3), the substrate 1 was transported without breaking the vacuum and placed in a μ-wave downflow affusion. did.
アッシングは、基板温度は室温で、反応ガスとしてＣＰ
ｉ（１００ＳＣＣＭ）、０２ （１５００ＳＣＣＭ）を
用い、これをＩ Ｔｏｒｒに減圧して周波数２．４５Ｇ
）Ｉｚのμ波型力をＩ ＫＷ ２分間印加して行った。In ashing, the substrate temperature is room temperature and CP is used as the reaction gas.
i (100SCCM) and 02 (1500SCCM), reduce the pressure to I Torr and set the frequency to 2.45G.
) A μ wave type force of Iz was applied for 2 minutes.
つぎに、基板を大気中に取り出し、そのままのものと、
ＨＮＯｆｆに５秒浸漬したものと、コリンの５％の水溶
液（商品名ＴＭＫ、関東化学類）に３０秒浸漬したもの
について、つぎのテストを行った。Next, take the board out into the atmosphere and leave it as it is.
The following tests were conducted on samples immersed in HNoff for 5 seconds and samples immersed in a 5% choline aqueous solution (trade name: TMK, Kanto Kagaku Group) for 30 seconds.
この後、基板を大気中で７日間放置してコロ−ジョンの
発生を観察し、また、螢光Ｘ線分析で残留塩素量を測定
した。Thereafter, the substrate was left in the atmosphere for 7 days to observe the occurrence of corrosion, and the amount of residual chlorine was measured by fluorescent X-ray analysis.
これらの結果をつぎに示す。These results are shown below.
（ａ） 処理方法
（ｂｌ コロ−ジョン発生の有無
（Ｃ１残留塩素量（ｃｐｓ、 ｃｏｕｎｔ ｐｅｒ ｓ
ｅｃ、）とすると、
（ａｌ 処理なし ＨＮＯ，浸漬 コリン浸漬（ｂ
） あり なし なしくｃｌ １
４１．１ １１．８ １．７上記の結果より、Ｈ
ＮＯ，浸漬処理より残留塩素量が減少し、勿論コロ−ジ
ョンの発生は認められなくなる。(a) Treatment method (bl) Presence or absence of corrosion (C1 residual chlorine amount (cps, count per s)
ec,), (al No treatment HNO, immersion Choline immersion (b
) Yes No No cl 1
41.1 11.8 1.7 From the above results, H
The amount of residual chlorine is reduced compared to NO, immersion treatment, and of course no corrosion is observed.
実施例ではコリンを用いたがこれの代わりに、コリンの
誘導体、例えば第３図にその構造式を示すＴＭＡＨＯ（
テトラメチルアンモニウムハイドロオキサイド）を用い
てもコリンと全く同等の効果が得られる。In the examples, choline was used, but instead of choline, a choline derivative such as TMAHO ( whose structural formula is shown in FIG.
Tetramethylammonium hydroxide) can also be used to achieve exactly the same effect as choline.
ＴＭＡ）１０の２．５％水溶液として、関東化学のＴＭ
Ａ、
東京応化工業のＮＭＤ、
長潮産業の９３２ディベロツバ−、
シブレイ・ファーイーストの
マイクロホシソ）ＭＦ３１４ ティベロツバ−１ＭＦ３
１２ディベロツバー
等がある（以上いずれも商品名）。Kanto Kagaku's TM as a 2.5% aqueous solution of TMA) 10
A, Tokyo Ohka Kogyo's NMD, Nagashio Sangyo's 932 Diberotsuba, Sibley Far East's Micro Hoshiso) MF314 Tiberotsuba-1MF3
There are 12 developers, etc. (all of the above are product names).
Ｃ発明の効果〕
以上詳細に説明したように本発明によれば、エレクトロ
マイグレーション防止のための配線層であるＡＬ−Ｃｕ
層等のＡ１合金層のパターニングにおいて、残留塩素分
を除去し、配線層にコロ−ジョンが発生することを抑止
する。C Effects of the Invention] As explained in detail above, according to the present invention, the wiring layer for preventing electromigration is
In patterning an A1 alloy layer such as a layer, residual chlorine is removed to prevent corrosion from occurring in the wiring layer.
また、本発明の処理を採用することによりプロセスの自
動化が容易となる。Further, by employing the process of the present invention, automation of the process becomes easy.
第１図（１１〜（３）は本発明を工程順に説明する基板
断面図、
第２図はコリンの構造式を示す図、
第３図はＴＭＡＨＯの構造式を示す図である。
図において、
１は基板、
２はＡ１合金層でＡｌ−Ｃｕ層、
２ＡはＡｔ合金層のパターン、
３レジストパターン
第 １ 図
Ｃ２Ｈ，○
ＣＨ。
ＴＭＡＨＯの構造式を示”
ｒ図Fig. 1 (11 to (3)) are cross-sectional views of a substrate explaining the present invention step by step, Fig. 2 is a view showing the structural formula of choline, and Fig. 3 is a view showing the structural formula of TMAHO. 1 is the substrate, 2 is the A1 alloy layer and Al-Cu layer, 2A is the pattern of the At alloy layer, and 3 is the resist pattern. Figure 1: C2H, ○ CH. The structural formula of TMAHO is shown in the r figure.
Claims (1)
の上にレジストパターン（３）を形成し、該レジストパ
ターン（３）をマスクにして該アルミニウム合金層（２
）をエッチングして該アルミニウム合金層のパターン（
２Ａ）を形成し、該レジストパターン（３）を除去後、
該基板（１）をコリン、もしくはその誘導体中に浸漬す
ることを特徴とするエッチング方法。An aluminum alloy layer (2) is deposited on a substrate (1), a resist pattern (3) is formed thereon, and the aluminum alloy layer (2) is coated using the resist pattern (3) as a mask.
) is etched to form the pattern of the aluminum alloy layer (
2A) and after removing the resist pattern (3),
An etching method characterized in that the substrate (1) is immersed in choline or a derivative thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12412486A JPS62281332A (en) | 1986-05-29 | 1986-05-29 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12412486A JPS62281332A (en) | 1986-05-29 | 1986-05-29 | Etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62281332A true JPS62281332A (en) | 1987-12-07 |
| JPH0513534B2 JPH0513534B2 (en) | 1993-02-22 |
Family
ID=14877518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12412486A Granted JPS62281332A (en) | 1986-05-29 | 1986-05-29 | Etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62281332A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0463423B1 (en) * | 1990-06-14 | 1995-08-30 | Mitsubishi Gas Chemical Company, Inc. | Surface treating agent for aluminum line pattern substrate |
| JP2510053B2 (en) * | 1990-06-27 | 1996-06-26 | 富士通株式会社 | Method of manufacturing semiconductor integrated circuit and manufacturing apparatus used therefor |
| JPH11305454A (en) * | 1998-04-24 | 1999-11-05 | United Microelectronics Corp | Removing method of residual substance |
| US6092537A (en) * | 1995-01-19 | 2000-07-25 | Mitsubishi Denki Kabushiki Kaisha | Post-treatment method for dry etching |
| US6506684B1 (en) * | 2000-05-24 | 2003-01-14 | Lsi Logic Corporation | Anti-corrosion system |
| EP1579033A1 (en) * | 2002-11-12 | 2005-09-28 | Kurita Water Industries Ltd. | Metal corrosion inhibitor and hydrogen chloride formation inhibitor in a crude oil atmospheric distillation unit |
| US7547669B2 (en) | 1998-07-06 | 2009-06-16 | Ekc Technology, Inc. | Remover compositions for dual damascene system |
-
1986
- 1986-05-29 JP JP12412486A patent/JPS62281332A/en active Granted
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0463423B1 (en) * | 1990-06-14 | 1995-08-30 | Mitsubishi Gas Chemical Company, Inc. | Surface treating agent for aluminum line pattern substrate |
| JP2510053B2 (en) * | 1990-06-27 | 1996-06-26 | 富士通株式会社 | Method of manufacturing semiconductor integrated circuit and manufacturing apparatus used therefor |
| US6092537A (en) * | 1995-01-19 | 2000-07-25 | Mitsubishi Denki Kabushiki Kaisha | Post-treatment method for dry etching |
| JPH11305454A (en) * | 1998-04-24 | 1999-11-05 | United Microelectronics Corp | Removing method of residual substance |
| US7547669B2 (en) | 1998-07-06 | 2009-06-16 | Ekc Technology, Inc. | Remover compositions for dual damascene system |
| US6506684B1 (en) * | 2000-05-24 | 2003-01-14 | Lsi Logic Corporation | Anti-corrosion system |
| EP1579033A1 (en) * | 2002-11-12 | 2005-09-28 | Kurita Water Industries Ltd. | Metal corrosion inhibitor and hydrogen chloride formation inhibitor in a crude oil atmospheric distillation unit |
| EP1579033A4 (en) * | 2002-11-12 | 2007-11-21 | Kurita Water Ind Ltd | Metal corrosion inhibitor and hydrogen chloride formation inhibitor in a crude oil atmospheric distillation unit |
| US8177962B2 (en) | 2002-11-12 | 2012-05-15 | Kurita Water Industries, Ltd. | Metal corrosion inhibitor and hydrogen chloride formation inhibitor in a crude oil atmospheric distillation unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0513534B2 (en) | 1993-02-22 |
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