JPS62278718A - Impregnated cathode - Google Patents
Impregnated cathodeInfo
- Publication number
- JPS62278718A JPS62278718A JP61121005A JP12100586A JPS62278718A JP S62278718 A JPS62278718 A JP S62278718A JP 61121005 A JP61121005 A JP 61121005A JP 12100586 A JP12100586 A JP 12100586A JP S62278718 A JPS62278718 A JP S62278718A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- cathode
- oxygen
- partial pressure
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 230000003647 oxidation Effects 0.000 claims abstract description 8
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 9
- 238000004544 sputter deposition Methods 0.000 abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract description 5
- 230000001590 oxidative effect Effects 0.000 abstract description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 101150038956 cup-4 gene Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 239000012190 activator Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 etc. Inorganic materials 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Solid Thermionic Cathode (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔産業上の利用分野〕
本発明は高精細用の表示管、受像管及び撮像管の高電流
密度カソードとして注目されている含浸形カソードに関
する。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an impregnated cathode that is attracting attention as a high current density cathode for high-definition display tubes, picture tubes, and image pickup tubes. .
従来のカソードは特願昭５９−１３３１４９記載のよう
に、耐熱性多孔質基体の電子放出面に高融点金属とＳｃ
又はＳｃの酸化物もしくはその両者とからなる薄膜を設
けていた。As described in Japanese Patent Application No. 59-133149, a conventional cathode has a high melting point metal and Sc on the electron emitting surface of a heat-resistant porous substrate.
Alternatively, a thin film made of Sc oxide or both was provided.
上記従来のカソードでは、薄膜構成元素特にＷの酸化状
態は考慮されて与らず、薄膜形成時の真空雰囲気等に対
応してＷの酸化の程度が変化していた。In the conventional cathode described above, the oxidation state of the thin film constituent elements, particularly W, is not taken into account, and the degree of oxidation of W changes depending on the vacuum atmosphere etc. during thin film formation.
本発明の目的は、このＷの酸化状態を人為的に制御する
ことにある。The purpose of the present invention is to artificially control the oxidation state of W.
上記目的は、前記従来のカソードの製作する際薄膜付着
時によく制御された酸素ガス、水蒸気等酸化性のガスま
たは蒸気を導入することにより達成される。また上記目
的は予め酸化したＷ粉または板をスパッタ蒸着時のター
ゲットとして用いることによっても実現される。The above object is achieved by introducing a well-controlled oxidizing gas or vapor, such as oxygen gas or water vapor, during the thin film deposition during fabrication of the conventional cathode. The above object can also be achieved by using pre-oxidized W powder or a plate as a target during sputter deposition.
含浸形カソードの電子放出特性は、カソード表面の仕事
関数によって支配される。仕事関数はカソード最表面の
原子群の配置によって決定される。The electron emission properties of an impregnated cathode are governed by the work function of the cathode surface. The work function is determined by the arrangement of atoms on the outermost surface of the cathode.
Ｗと５ｃｚＯｓの混合薄膜を被覆したカソードの最表面
は理想的にはＢａ、Ｓｃ及びＯからなる単分子層が存在
する。この単分子層の構成元素であるＳｃ及びＯは被Ｎ
ｉ’ｌ［Ｘ合ＮＩＪ々より、またＢａは下地の通常の含
浸形カソードより補給され、カソード動作時はこれらの
元素の供給と蒸発が平衡して定常状態になる。Ideally, a monomolecular layer consisting of Ba, Sc, and O exists on the outermost surface of the cathode coated with a mixed thin film of W and 5czOs. The constituent elements of this monomolecular layer, Sc and O, are
Ba is replenished from the underlying normal impregnated cathode, and during cathode operation, the supply and evaporation of these elements are balanced and a steady state is reached.
このうちＯはａ膜中のＷの酸化物（ＷＯａ）や５ｃｚＯ
ａの分解によって補給される。特に初期の単分子層形成
時には多量の○が要求される為、Ｗ酸化物の存在が不可
欠となる。Of these, O is the oxide of W in the a film (WOa) and 5czO.
It is replenished by the decomposition of a. In particular, since a large amount of ○ is required during initial monomolecular layer formation, the presence of W oxide is essential.
４瞑形成後、カソードを一旦大気にさらすことによりＷ
酸化物は容易に表面に形成されるが、この酸化物層の厚
さは極めて薄く、十分なＯの補給源となり得ない。本発
明は、このｗｆａ化物を制御して人為的に形成せしめる
ものである。4 After formation, the cathode is once exposed to the atmosphere to
Oxide is easily formed on the surface, but the thickness of this oxide layer is extremely thin and cannot serve as a sufficient source of O. In the present invention, this wfa compound is controlled and artificially formed.
以下、本発明の一実施例を第１図により説明する。第１
図は本発明による含浸形カソードを模式図的に示した断
面図である。図において、１はカソード材料のペレット
（１，４φ）であり、空孔率２０〜２５％の多弧貿のＷ
基体２と空孔３とから形成されている。なお多孔質基体
として１Ｍ０２Ｉ ｒ、Ｐｔ、Ｒｅ等及びこれらの合金
を用いても良い。空孔３巾には電子放出材料としてＢａ
Ｃ０３ｒＣａＣＯａ 、Ａ Ｑ ｚｏａ をモル比で４
：１： ｌの割合に配合したものを含浸した。なお異な
ったモル比の材料や、異る材料を添加した電子放出材料
を用いても良い。このペレット１をＴａカップ４に装着
し、その後Ｔａカップ４はＴａスリーブ５にレーザ溶接
される、レーザ溶接の代りにロー材を用いても良い。カ
ソードの加熱には、Ｗ芯線６をアルミナ被覆したヒータ
７を用いて行う。以上がＢａ補給源となる。Ｂａの補給
量は、加熱温度に依存するが、電子放出材料のモル比を
変えたり、また基体材料中にＺｒ、Ｈｆ、Ｔｉ、Ｃｒ、
Ｍｎ、５ｉｔＡＱ等の活性剤を含有せしめる事によって
も調整できる。５ｃｚＯδ補給源として厚さ１０ｎｍ〜
１μｍのＷと５ｃｚＯδからなる薄膜８を真空スパッタ
蒸着法により付着せしめた。Ｗの代りにＭ ｏ 。An embodiment of the present invention will be described below with reference to FIG. 1st
The figure is a sectional view schematically showing an impregnated cathode according to the present invention. In the figure, 1 is a cathode material pellet (1,4φ), which is a multi-arc W with a porosity of 20 to 25%.
It is formed from a base body 2 and holes 3. Note that 1M02Ir, Pt, Re, etc., and alloys thereof may be used as the porous substrate. Ba is used as an electron-emitting material in the three widths of the holes.
C03rCaCOa , A Q zoa in a molar ratio of 4
:1:1 ratio was mixed and impregnated. Note that materials with different molar ratios or electron-emitting materials to which different materials are added may be used. This pellet 1 is attached to a Ta cup 4, and then the Ta cup 4 is laser welded to the Ta sleeve 5. Instead of laser welding, a brazing material may be used. The cathode is heated using a heater 7 in which a W core wire 6 is coated with alumina. The above becomes a Ba supply source. The amount of Ba supplemented depends on the heating temperature, but it may be necessary to change the molar ratio of the electron-emitting material or add Zr, Hf, Ti, Cr,
It can also be adjusted by incorporating an activator such as Mn or 5itAQ. 5czOδ supply source with a thickness of 10 nm ~
A thin film 8 consisting of 1 .mu.m of W and 5 czO.delta. was deposited by vacuum sputter deposition. M o instead of W.
Ｒｅ、Ｐ Ｌ、Ｉ ｒ、Ｔａ等の金屑あるいはこれらの
合金を用いてもよい。Gold scraps such as Re, P L, I r, Ta, etc., or alloys thereof may also be used.
なお、真空中スパッタ蒸着に先立ち、スパッタ蒸着容器
内の酸素分圧をＩ Ｘ Ｉ Ｑ−”〜ｌＸｌ０−４Ｔｏ
ｒｒになるように、ガス導入器を通して高純度（９９，
９％）の酸素を導入し、容器内に装着した小型の質量分
析計にてその分圧を測定した。Note that, prior to sputter deposition in vacuum, the oxygen partial pressure in the sputter deposition container is set to IXIQ-''~lXl0-4To
high purity (99,
9%) of oxygen was introduced, and its partial pressure was measured using a small mass spectrometer installed inside the container.
この操作により、薄膜８中のＷを酸化させることが可能
になる。またスパッタ蒸着の途中から予め測定した分圧
の酸素を導入し、薄膜８の一部分のみを酸化することも
可能である。導入ガスは酸素以外にも酸化性カスであれ
ば用いることが出来る。This operation makes it possible to oxidize W in the thin film 8. It is also possible to oxidize only a portion of the thin film 8 by introducing oxygen at a preliminarily measured partial pressure during the sputter deposition. As the introduced gas, other than oxygen, any oxidizing gas can be used.
このようなカソードを用い、カソード・アノード２極管
方式でアノードに幅５μｓ、くり返し１００ ）ｆ ｚ
の高圧パルスを印加して飽和電流密度を１ｌｌｌｌ定し
た。その結果を第２図に示す。Using such a cathode, a cathode-anode diode method was applied to the anode with a width of 5 μs and a repetition rate of 100) f z
The saturation current density was determined at 1lllll by applying a high voltage pulse of . The results are shown in FIG.
図中９が本発明によるＷと５ｃ２０８からなる薄膜の被
覆を行ったカソードの特性である。9 in the figure shows the characteristics of a cathode coated with a thin film of W and 5c208 according to the present invention.
図中１０は、薄膜の酸化処理の無いカソードの特性であ
る。なお図中１１は、薄膜被覆を施してないカソードの
特性を示す。In the figure, numeral 10 indicates the characteristics of a cathode without oxidation treatment of the thin film. Note that 11 in the figure indicates the characteristics of a cathode not coated with a thin film.
本発明によれば、カソード最表面にＢａ、Ｓｃ及びＯか
らなる単分子層が安定に供給できるために、電子放出特
性の良いカソードを再現性良く得られる。According to the present invention, since a monomolecular layer consisting of Ba, Sc, and O can be stably supplied to the outermost surface of the cathode, a cathode with good electron emission characteristics can be obtained with good reproducibility.
第１図は本発明の含浸形カソードの一実施例を模式図的
に示した断面図、第２図は本発明のカソードと従来の含
浸形カソードの電子放出特性を比較した図である。
１・・・カソードペレット、２・・・Ｗ基体、３・・空
孔、４・・・Ｔａカップ、５・・・ＴＸ１スリーブ、６
・・・Ｗ芯線、７・・アルミナ被覆、８・・・薄膜、９
・・・本発明にょろ含浸形カソードの電子放出特性、１
ｏ・・・薄膜に酸化処理を行っていない従来型の含浸形
カソードの電子放出特性、１１・・・薄膜被覆の無い含
浸形カソードの電子放出特性。
１゜代理人 弁理士 小川勝舅 。
革 １ 区
第２７
１ カンードぜし、ト
′精覧娼□FIG. 1 is a cross-sectional view schematically showing an embodiment of the impregnated cathode of the present invention, and FIG. 2 is a diagram comparing the electron emission characteristics of the cathode of the present invention and a conventional impregnated cathode. 1... Cathode pellet, 2... W base, 3... Hole, 4... Ta cup, 5... TX1 sleeve, 6
...W core wire, 7...Alumina coating, 8...Thin film, 9
...Electron emission characteristics of the present invention's Nyoro-impregnated cathode, 1
o: Electron emission characteristics of a conventional impregnated cathode whose thin film has not been subjected to oxidation treatment, 11: Electron emission characteristics of an impregnated cathode without a thin film coating.
1゜Representative: Patent attorney Katsutoshi Ogawa. Leather 1 Ward No. 27 1 Kando Zeshi, To' Sightseeing Prostitute□
Claims (1)
体に付着せしめた含浸形カソードにおいて、薄膜中のＷ
に酸化処理を施してなることを特徴とする含浸形カソー
ド。1. In an impregnated cathode in which a mixed thin film of Sc or Sc_2O_3 and W is attached to a substrate, W in the thin film
An impregnated cathode characterized by being formed by subjecting it to oxidation treatment.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12100586A JPH0756776B2 (en) | 1986-05-28 | 1986-05-28 | Impregnated type cathode |
| KR1019870005242A KR900009071B1 (en) | 1986-05-28 | 1987-05-27 | Impregnated cathode |
| US07/055,035 US4783613A (en) | 1986-05-28 | 1987-05-28 | Impregnated cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12100586A JPH0756776B2 (en) | 1986-05-28 | 1986-05-28 | Impregnated type cathode |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8170882A Division JP2713290B2 (en) | 1996-07-01 | 1996-07-01 | Picture tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62278718A true JPS62278718A (en) | 1987-12-03 |
| JPH0756776B2 JPH0756776B2 (en) | 1995-06-14 |
Family
ID=14800427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12100586A Expired - Lifetime JPH0756776B2 (en) | 1986-05-28 | 1986-05-28 | Impregnated type cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0756776B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5979934A (en) * | 1982-10-29 | 1984-05-09 | Hitachi Ltd | Impregnated cathode |
| JPS6113536A (en) * | 1984-06-27 | 1986-01-21 | Matsushita Electronics Corp | Cathode-ray tube |
-
1986
- 1986-05-28 JP JP12100586A patent/JPH0756776B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5979934A (en) * | 1982-10-29 | 1984-05-09 | Hitachi Ltd | Impregnated cathode |
| JPS6113536A (en) * | 1984-06-27 | 1986-01-21 | Matsushita Electronics Corp | Cathode-ray tube |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0756776B2 (en) | 1995-06-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |