JPS62277613A - Magneto-resistance effect head - Google Patents

Magneto-resistance effect head

Info

Publication number
JPS62277613A
JPS62277613A JP11986786A JP11986786A JPS62277613A JP S62277613 A JPS62277613 A JP S62277613A JP 11986786 A JP11986786 A JP 11986786A JP 11986786 A JP11986786 A JP 11986786A JP S62277613 A JPS62277613 A JP S62277613A
Authority
JP
Japan
Prior art keywords
magnetic
bias conductor
magnetic material
head
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11986786A
Other languages
Japanese (ja)
Inventor
Kohei Izawa
井沢 康平
Ichiro Kudo
一郎 工藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP11986786A priority Critical patent/JPS62277613A/en
Publication of JPS62277613A publication Critical patent/JPS62277613A/en
Pending legal-status Critical Current

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  • Magnetic Heads (AREA)

Abstract

PURPOSE:To prevent defective insulation by directly laminating a shielding layer and bias conductor of either of the shielding layer which makes magnetic shielding and a magnetic head provided with the bias conductor into contact with each other. CONSTITUTION:The bias conductor 13 of an MR head is directly deposited and formed on a magnetic material layer 12 which faces a magnetic material substrate 11 to sandwich respective MR elements 1, 1,.... The bias conductor 13 has about the same film thickness as the film thickness of the magnetic material layer 12, i.e., about 1mum and Au having the electric resistance large than the electric resistance of the magnetic material layer 12 for which a ferromagnetic metallic material such as Ni-Fe alloy is generally assigned is selected for the material of said conductor. Since the MR head directly bonds the magnetic material layer 21 and the bias conductor 13, the magnetic material layer 12 and the bias conductor 13 are formed in tight contact with each other on the zone where the MR elements exist on the surface of a nonmagnetic material film 9 after the embedment and formation of the many MR elements 1, 1,... into the nonmagnetic material film 9 consisting of SiO2, Al2O3, etc. The insulating characteristic of the MR elements is thereby maintained.

Description

【発明の詳細な説明】 発明の詳細な説明 産業上の利用分野 この発明は、磁気抵抗効果ヘッド(Magnet。[Detailed description of the invention] Detailed description of the invention Industrial applications This invention relates to a magnetoresistive head (Magnet).

Re5istance IJfect Head、以下
MRヘッドと略記する)のノイズ低減技術に関するもの
である。
The present invention relates to noise reduction technology for the Re5istance IJfect Head (hereinafter abbreviated as MR head).

従来の技術 MRヘッドは、磁気記録媒体よりの信号磁界を再生する
磁′気ヘッドであり、周知の通り、DATやコンピュー
タ等の磁気記録応用電子機器に賞月されている。このM
Rヘッドは、従来よりの薄膜化誘導型ヘッドと異なり磁
束応答型であり、第2図に示すように、強磁性体のMR
素子1の両端2.3に導電リード4,5を接続して通電
し、流れる電流■に対して直交方向に外部磁界Hexを
作用させると、MR素子1内の磁化Mが角度θだけ回転
する磁気抵抗効果に基づくものである。つまり、導電リ
ード4,5の両端で検出される比抵抗ρは、外部磁界■
exに応じて変化する角度θの函数となり、次の(I)
式にて示される。
2. Description of the Related Art MR heads are magnetic heads that reproduce signal magnetic fields from magnetic recording media, and as is well known, they are used in magnetic recording applied electronic equipment such as DATs and computers. This M
Unlike conventional thin-film induction heads, the R head is of a magnetic flux response type, and as shown in Figure 2, it is a ferromagnetic MR head.
When the conductive leads 4 and 5 are connected to both ends 2.3 of the element 1 and energized, and an external magnetic field Hex is applied in a direction perpendicular to the flowing current ■, the magnetization M in the MR element 1 rotates by an angle θ. It is based on the magnetoresistive effect. In other words, the specific resistance ρ detected at both ends of the conductive leads 4 and 5 is determined by the external magnetic field ■
It is a function of the angle θ that changes according to ex, and the following (I)
It is shown in the formula.

ρ(θ)=ρ//cos2θ+ρ±5in2θ=ρ−△
ρ5in2θ □(I) 但し ρ//は磁化Mの回転がないときの比抵抗(θ=
0) ρ±は磁化Mの回転が直角のときの比抵抗(θ=π/2
) △ρ=ρ//−ρ土である。
ρ(θ)=ρ//cos2θ+ρ±5in2θ=ρ−△
ρ5in2θ □(I) However, ρ// is the specific resistance when there is no rotation of magnetization M (θ=
0) ρ± is the specific resistance when the rotation of magnetization M is at right angles (θ=π/2
) △ρ=ρ//−ρ soil.

そして外部磁界Hexと比抵抗ρとの関係は、第3図に
示すような特性曲線6で示され、線形的な関係となり忠
実に再生される範囲は、おおむね領域7に限られるので
、バイアス磁界HBをMR素子1へ印加し、動作点8を
領域7内に設定している。すなわち、外部磁界Hexは
、磁気記録媒体よりの信号磁界HSだけではなく、次の
(n)式で表される。
The relationship between the external magnetic field Hex and the specific resistance ρ is shown by a characteristic curve 6 as shown in FIG. HB is applied to the MR element 1, and the operating point 8 is set within the region 7. That is, the external magnetic field Hex is expressed not only by the signal magnetic field HS from the magnetic recording medium but also by the following equation (n).

Hex =HS +HB          (II)
ところでこのMRヘッドは、MR素子1を高透磁率材料
で挾んだシールド型が提案されてから磁気記録密度向上
に大きく貢献できるようになった。そしてシールド型M
Rヘッドとしては、例えば、電子通信学会技術研究報告
MR81−27,1981年12月15日発行No、1
90に紹介されているものがある。
Hex = HS + HB (II)
By the way, since a shield type MR head in which the MR element 1 is sandwiched between high magnetic permeability materials was proposed, it has become possible to greatly contribute to the improvement of magnetic recording density. And shield type M
As the R head, for example, IEICE technical research report MR81-27, published December 15, 1981, No. 1
Some of them are introduced in 90.

以上説明したシールド型MRヘッドは、一般に、第4図
に示すように、MR素子1を非磁性体絶縁物であるSI
O□膜9を介して磁性体基板11と磁性体層12でサン
ドイッチ状に挟み付けした構造となっている つまり、磁性体基板11と磁性体層12が磁気的シール
ド板の役目をし、しかも磁性体層−12は電気抵抗が小
さいものを選定して、バイアス導体を兼ねるものであっ
た 発明が解決しようとする問題点 ところが上述したシールド型MRヘッドは、磁性体層1
2が磁性体かつ導体となるもの、例えばN1−Fe合金
等を指定することになるので、電気抵抗が導体の中では
高い方に属し、そのためバイアス磁界印加のために通電
すると、相当発熱し、サーマルノイズを発生してしまう
欠点があった。この欠点を改善しようとして、通電電流
を少なくしても十分なバイアス磁界をMR素子1へ印加
しようとすれば、磁性体層12とMR素子1との絶縁距
離を極力縮めねばならず、絶縁不良を招き易く、その上
、MR素子1が加熱されて減磁してしまう危険性もあっ
た。
The shielded MR head described above generally uses SI, which is a non-magnetic insulator, as the MR element 1, as shown in FIG.
The structure is such that the magnetic substrate 11 and the magnetic layer 12 are sandwiched together with the O□ film 9 interposed therebetween. The problem to be solved by the invention is that the magnetic layer 12 is selected to have a low electrical resistance and also serves as a bias conductor.However, in the above-mentioned shield type MR head, the magnetic layer 1
2 is a magnetic material and a conductor, such as an N1-Fe alloy, which has a high electrical resistance among conductors, and therefore generates considerable heat when energized to apply a bias magnetic field. This had the drawback of generating thermal noise. In order to improve this drawback and apply a sufficient bias magnetic field to the MR element 1 even if the current is reduced, the insulation distance between the magnetic layer 12 and the MR element 1 must be reduced as much as possible, resulting in poor insulation. Furthermore, there was a risk that the MR element 1 would be heated and demagnetized.

問題点を解決するための手段 この発明は、上記問題を解決するために提案されたもの
で、シールド層とバイアス導体とを直接積層させること
を特徴としている。すなわち、この発明はMR素子を挟
み付はシールドするシールド層である磁性体層として強
磁性体を、バイアス導体として良導電体を各々材質指定
するとともに、直接積層構造、つまり、極近接接着する
ことにより、サーマルノイズ発生を解決しようとする技
術である。
Means for Solving the Problems The present invention was proposed to solve the above problems, and is characterized by directly stacking the shield layer and the bias conductor. That is, the present invention specifies a ferromagnetic material as a magnetic material layer that is a shield layer that sandwiches and shields an MR element, and a good conductor as a bias conductor, and also uses a direct laminated structure, that is, extremely close adhesion. This is a technology that attempts to solve the problem of thermal noise.

作用 この発明によれば、バイアス導体に十分大きな電流を流
しても、シールド層である磁性体層は、バイアス導体よ
りも電気抵抗が高いものとなるので、通電されずサーマ
ルノイズの影響を防ぐことができる。またこの発明では
、シールド層とバイアス導体とが極近接接着となるので
、MR素子と両者とを十分な距離に絶縁することができ
、しかも製作も容易とすることが可能となる。
According to this invention, even if a sufficiently large current is passed through the bias conductor, the magnetic layer serving as the shield layer has a higher electrical resistance than the bias conductor, so the current does not flow and the influence of thermal noise is prevented. Can be done. Further, in this invention, since the shield layer and the bias conductor are bonded in close proximity, it is possible to insulate the MR element from both at a sufficient distance, and also to facilitate manufacturing.

実施例 第1図は、この発明の一実施例を示すMRヘッドの記録
媒体摺接面に平行な面で切断した断面図で、従来の場合
を示した第4図と同一呼称は、同一図番で記し、重複説
明は省略する。このMRヘッドにおける13は、この発
明の主旨となるバイアス導体で、各々のMR素子1,1
.・・・を磁性体基板11と対向して挟んでいる磁性体
層12上に直接被着形成したものである。このバイアス
導体13は、磁性体層I2と同程度の膜厚、すなわち約
1μmであり、材質としては、一般にNi−Fe合金等
の金属強磁性体が指定される磁性体層12よりも電気抵
抗が大きいAuを選定する。
Embodiment FIG. 1 is a sectional view taken along a plane parallel to the recording medium sliding surface of an MR head showing an embodiment of the present invention. The same designations as those in FIG. 4 showing the conventional case refer to the same figure. They will be described by number, and duplicate explanations will be omitted. Reference numeral 13 in this MR head is a bias conductor, which is the gist of the present invention, and is used for each MR element 1, 1.
.. ... are directly deposited on the magnetic layer 12 sandwiching the magnetic substrate 11 facing each other. The bias conductor 13 has a thickness similar to that of the magnetic layer I2, that is, about 1 μm, and is made of a material that has a higher electrical resistance than the magnetic layer 12, which is generally made of a metal ferromagnetic material such as a Ni-Fe alloy. Select Au with a large value.

この実施例のMRヘッドは、上述の通り磁性体層12と
バイアス導体13とを直接接合させるので、多数のMR
素子1,1.・・・をSiO□やA1203等の非磁性
体膜9に埋設形成後、非磁性体膜9の表面上のMR素子
存在帯域上に磁性体層12、バイアス導体■3を密着形
成すると、量産性も向上し好都合である。
In the MR head of this embodiment, since the magnetic layer 12 and the bias conductor 13 are directly bonded as described above, a large number of MR head
Element 1, 1. ... is buried in a non-magnetic film 9 made of SiO□, A1203, etc., and then a magnetic layer 12 and a bias conductor 3 are closely formed on the MR element existing band on the surface of the non-magnetic film 9, which facilitates mass production. It also improves sex and is convenient.

尚、上記実施例は磁性体B12上にバイアス導体+3を
積層形成したが、この発明ではその他に、例えば、非磁
性体1!X9を十分厚くしたり、断熱性良好な組成とし
ておき、非磁性体膜9上にまずバイアス導体13を成膜
させ、さらに磁性体層12をその上に被膜させるように
してもかまわない。
Incidentally, in the above embodiment, the bias conductor +3 is laminated on the magnetic material B12, but in this invention, for example, a non-magnetic material 1! It is also possible to make X9 sufficiently thick or to have a composition with good heat insulation, to first form the bias conductor 13 on the non-magnetic film 9, and then to coat the magnetic layer 12 thereon.

発明の効果 この発明によれば、磁性体層に直接積層させるバイアス
導体を設けるので、磁性体層がサーマルノイズの影響を
受けることなく、十分磁気シールド効果を高めることが
でき、しかもMR素子の絶縁性を保持し、量産性をも十
分大きくでき、著しく信頼性が伸長する。
Effects of the Invention According to the present invention, since the bias conductor is directly laminated on the magnetic layer, the magnetic layer is not affected by thermal noise, and the magnetic shielding effect can be sufficiently enhanced. The reliability is maintained, mass productivity is sufficiently increased, and reliability is significantly increased.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、この発明の一実施例を示す磁気抵抗効果型ヘ
ッドの断面図、第2図は、一般的な磁気抵抗効果型ヘッ
ドの平面視概念図、第3図はそのヘッドのρ−H特性曲
線図、第4図はそのヘッドの断面図である。 1・・・磁気抵抗効果素子(MR素子)、11・・・磁
性体基板(シールド層)、12・・・磁性体層(シール
ド層)、 13・・・バイアス導体。
FIG. 1 is a sectional view of a magnetoresistive head showing an embodiment of the present invention, FIG. 2 is a conceptual plan view of a general magnetoresistive head, and FIG. 3 is a ρ- The H characteristic curve diagram and FIG. 4 are cross-sectional views of the head. DESCRIPTION OF SYMBOLS 1... Magnetoresistive effect element (MR element), 11... Magnetic material substrate (shield layer), 12... Magnetic material layer (shield layer), 13... Bias conductor.

Claims (1)

【特許請求の範囲】[Claims] 磁気抵抗効果素子と対向近接させて、上記磁気抵抗効果
素子を挟み付けて磁気的にシールドするシールド層、バ
イアス導体を設ける磁気ヘッドにおいて、前記いずれか
一方のシールド層とバイアス導体とを直接積層させるこ
とを特徴とする磁気抵抗効果型ヘッド。
In a magnetic head that is provided with a bias conductor and a shield layer that sandwiches the magnetoresistive element and magnetically shields the magnetoresistive element, the shield layer and the bias conductor are directly laminated to face the magnetoresistive element. A magnetoresistive head characterized by:
JP11986786A 1986-05-23 1986-05-23 Magneto-resistance effect head Pending JPS62277613A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11986786A JPS62277613A (en) 1986-05-23 1986-05-23 Magneto-resistance effect head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11986786A JPS62277613A (en) 1986-05-23 1986-05-23 Magneto-resistance effect head

Publications (1)

Publication Number Publication Date
JPS62277613A true JPS62277613A (en) 1987-12-02

Family

ID=14772228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11986786A Pending JPS62277613A (en) 1986-05-23 1986-05-23 Magneto-resistance effect head

Country Status (1)

Country Link
JP (1) JPS62277613A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6381094B1 (en) 1999-07-23 2002-04-30 Hardayal Singh Gill Shield structure with a heat sink layer for dissipating heat from a read sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159222A (en) * 1982-03-16 1983-09-21 Matsushita Electric Ind Co Ltd Thin film magnetic head

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159222A (en) * 1982-03-16 1983-09-21 Matsushita Electric Ind Co Ltd Thin film magnetic head

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6381094B1 (en) 1999-07-23 2002-04-30 Hardayal Singh Gill Shield structure with a heat sink layer for dissipating heat from a read sensor

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