JPS59221820A - Thin film magnetic head - Google Patents

Thin film magnetic head

Info

Publication number
JPS59221820A
JPS59221820A JP9605283A JP9605283A JPS59221820A JP S59221820 A JPS59221820 A JP S59221820A JP 9605283 A JP9605283 A JP 9605283A JP 9605283 A JP9605283 A JP 9605283A JP S59221820 A JPS59221820 A JP S59221820A
Authority
JP
Japan
Prior art keywords
insulating layer
substrate
magnetic
thin film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9605283A
Other languages
Japanese (ja)
Inventor
Hideo Suyama
英夫 陶山
Shigemi Imakoshi
今越　茂美
Yutaka Hayata
裕 早田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP9605283A priority Critical patent/JPS59221820A/en
Publication of JPS59221820A publication Critical patent/JPS59221820A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
    • G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
    • G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
    • G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/313—Disposition of layers
    • G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Magnetic Heads (AREA)

Abstract

PURPOSE:To generate no peeling nor crack in an insulating layer, and to obtain a magnetic having a high reliability with a good yield by forming an insulating layer through a metallic layer on an Mn-Zn ferrite magnetic substrate having a good surface property, and forming a thin film magnetic head element on the insulating layer. CONSTITUTION:In a magneto-resistance effect type (MR) or electromagnetic induction type thin film magnetic head, for instance, with regard to a substrate of an MR magnetic head, a metallic layer 12 of Al, Cr, Ti, Al-Si alloy, etc. is stuck and formed on the whole surface of an Mn-Zn ferrite substrate 1, and thereafter, an insulating layer 13 of Si3N4 or SiO2, etc. is formed on the layer 12. A bias electric conductor 2 is formed on the layer 13, and an MR element 4 is formed on an electric conductor 2 through an insulating layer 3. Subsequently, magnetic cores 6, 7 are formed through an insulating layer 5, and the rear end of the core 7 is concatenated, etc. to the magnetic substrate 1. In this way, an adhesion of the insulating layer 13 and the substrate 1 is improved by interposing the layer 12, an insulation of the electric conductor 2 and the substrate 1 is secured, and an excellent head having a high yield is obtained.

Description

【発明の詳細な説明】 本発明は磁気抵抗効果型或いは電磁誘導型による薄膜磁
気ヘッドに係わる。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetoresistive type or electromagnetic induction type thin film magnetic head.

背景技術とその問題点 磁気抵抗効果（以下ＭＲ，という）型、或いは電磁誘導
型薄膜磁気ヘッドにおいては、その磁路の一部となる或
いは外部との電磁遮蔽効果を得る為に磁性基板上に薄膜
磁気ヘッド素子を形成する構造が多くとられる。Background Art and Problems In a magnetoresistive (hereinafter referred to as MR) type or electromagnetic induction type thin film magnetic head, a magnetic substrate is placed on a magnetic substrate to become a part of the magnetic path or to obtain an electromagnetic shielding effect from the outside. A structure that forms a thin film magnetic head element is often used.

第１図はＭＲ型薄膜磁気ヘッドの１例を示す路線的拡大
平面図で、第２図はその断面図を示す。FIG. 1 is an enlarged plan view showing an example of an MR type thin film magnetic head, and FIG. 2 is a sectional view thereof.

このＭ）ＩＩ、型薄膜磁気ヘッドは、磁性基板（１）上
にＭＲ素子に対してバイアス磁界を与える為のバイアス
磁界発生の電流通路となる帯状導電膜より成るバイアス
導体１２＋が形成され、これの上Ｋ　Ｓｉ３Ｎ４或いは
５ｔＯ２等より成る絶縁層（３）を介して例えばＮｉ　
−Ｆｅ系合金或いはＮＩ　−Ｃｏ系合金薄膜等より成る
ＭＲ素子（４）が被着形成され、さらにこ４．の上に同
様の絶縁層（５）を介してＮＩ−Ｆｅ系合金等の磁性層
より成る一対の磁気コア（６）及び（７）が素子（４）
上を横切る方向に且つ素子（４）上において所要の間隔
すなわち不連続部Ｇを介在させるように形成される。In this M) II type thin film magnetic head, a bias conductor 12+ made of a strip-shaped conductive film is formed on a magnetic substrate (1) to serve as a current path for generating a bias magnetic field for applying a bias magnetic field to an MR element. For example, a Ni
An MR element (4) made of a thin film of -Fe-based alloy or NI-Co-based alloy is deposited, and 4. A pair of magnetic cores (6) and (7) made of a magnetic layer such as NI-Fe alloy are placed on the element (4) with a similar insulating layer (5) interposed therebetween.
It is formed so that a required interval, that is, a discontinuous portion G is interposed in the direction across the top and on the element (4).

そして、この場合一方の磁気コア（６）の外端部は非磁
性の例えば絶縁層（３）及び或いは（５）を介して磁性
基板ｆｉ＋と対向しこのコア（６）と磁性基板（１）と
の間に磁気ギャップｇが形成されるようになされる。他
方の磁気コア（７）の外端は例えば絶縁層（３）及び（
５）に穿設された窓を通じて磁性基板（１）に連接され
るよう忙なされる。そしてこれらバイアス導体＋２１、
Ｍｌも素子（４）、磁気コア（６）及び（７）を覆って
非出性絶縁性保護層（８）が被覆され、これの上に接着
材層（９）によって保護基板叫が接着される。そして両
基板ｆｉ＋及び（１Ｇと磁気コア（６）の外端側が切削
研磨されて磁気媒体との対接面（Ｉｌ＋が形成されるよ
うになされる。In this case, the outer end of one magnetic core (6) faces the magnetic substrate fi+ via a non-magnetic, for example, insulating layer (3) and/or (5), and this core (6) and the magnetic substrate (1) A magnetic gap g is formed between them. The outer end of the other magnetic core (7) is covered with, for example, an insulating layer (3) and (
5) is connected to the magnetic substrate (1) through the window drilled in it. And these bias conductors +21,
Ml is also covered with a non-emissive insulating protective layer (8) covering the element (4), magnetic cores (6) and (7), and a protective substrate layer (9) is adhered onto this with an adhesive layer (9). Ru. Then, the outer ends of both substrates fi+ and (1G) and the magnetic core (6) are cut and polished to form a surface (Il+) that faces the magnetic medium.

このようにして磁気ギャップｇが磁気媒体との対接面（
１１）に臨みこの磁気ギャップｇ及びＭｌ（、素子（４
）を含む閉磁路が形成されて薄膜磁気ヘッド素子りが構
成されるＥ このような構成による薄膜磁気ヘッドにおいては、磁性
基板（１）上に例えばバイアス導体（２）のように導電
層が形成されることからこの磁性基板（１１としてはこ
れが高抵抗すなわち絶縁性の例えばＮｉ−Ｚｎ系フェラ
イト基板を用いることが望ましいが、このＮ１−Ｚ、系
フェライトは、これの製作方法にかかわらずその研磨さ
れた表面には１μｍ前後の穴が極めて多く存在しこれが
為にこれの上に形成した薄膜磁気ヘッドの各部にショー
ト、断線等の不都合が生じ信頼性が低く、また歩留に問
題がある。In this way, the magnetic gap g is the contact surface with the magnetic medium (
11), this magnetic gap g and Ml (, element (4
) is formed to constitute a thin film magnetic head element.E In a thin film magnetic head with such a configuration, a conductive layer such as a bias conductor (2) is formed on a magnetic substrate (1). Therefore, it is desirable to use a high resistance or insulating Ni-Zn ferrite substrate as the magnetic substrate (11). There are extremely many holes of about 1 .mu.m on the surface of the thin film, which causes problems such as short circuits and disconnections in various parts of the thin film magnetic head formed thereon, resulting in low reliability and problems in yield.

そこでこの磁性基板ｊｌ＋としては、Ｍｎ　−Ｚｎ系フ
ェライトが用いられることが望捷れる。このＭｒ＋　−
Ｚｎ系フェライトは、表面性に勝れていて上述した電気
的短絡等による信頼性或いは歩留の低下の問題が全く回
避されるという利点を有するものの、このＭｎ−Ｚｎ系
フェライトは導電性を有するためにこれの上に直接的に
例えば上述したバイアス導体（２１のような導電層を形
成することができないものであり、これが為このＭｎ　
−Ｚ、ｎ系フェライト磁性基板（１）上にはＳＩ３Ｎ４
或いは５ｉ０２等の絶縁層を被覆させる必要が生じる。Therefore, it is desirable to use Mn--Zn type ferrite as this magnetic substrate jl+. This Mr+ -
Zn-based ferrite has the advantage that it has superior surface properties and completely avoids the problem of reliability or yield reduction due to electrical short circuits, etc., as described above, but this Mn-Zn-based ferrite has electrical conductivity. Therefore, it is not possible to directly form a conductive layer such as the above-mentioned bias conductor (21) on this Mn.
-Z, SI3N4 on the n-based ferrite magnetic substrate (1)
Alternatively, it becomes necessary to cover it with an insulating layer such as 5i02.

ところがこの５１３Ｎ４或いはＳ＋０２等の絶縁層とＭ
ｎ　−Ｚｎ系フェライトとはその熱膨張係数の差が大穴
い為に、この絶縁層をＭ、　−Ｚ、系フェライト磁性基
板（１）に＠接被着する場合剥離乃至は亀裂が生じ易い
という機械的密着性に問題が生じる。However, this insulating layer such as 513N4 or S+02 and M
Since there is a large difference in thermal expansion coefficient between n-Zn ferrite and M-Zn ferrite, it is said that peeling or cracking is likely to occur when this insulating layer is adhered to M, -Z, ferrite magnetic substrate (1). Problems arise with mechanical adhesion.

丑たこのような問題は、上述したＭｌ（・効果型薄膜磁
気ヘッドのみでなく、電磁誘導型の薄膜磁気ヘッドにお
いてもその磁性基板上にヘッド巻線となる巻線導体とを
被着するものであることから同様の問題が生じる。This problem is caused by the above-mentioned Ml (not only effect-type thin-film magnetic heads, but also electromagnetic induction-type thin-film magnetic heads, in which a winding conductor serving as the head winding is deposited on the magnetic substrate. A similar problem arises because of this.

発明の目的 本発明は上述した薄膜磁気ヘッドにおいてその磁性基板
としてＭＨ−Ｚｎ系フェライトを用いてこれの上に絶縁
層を形成する場合においてその密着性の低さを効果的に
回避することができ信頼性が高く歩留りの高い薄膜磁気
ヘッドを得ることができるようにするものである。Purpose of the Invention The present invention is capable of effectively avoiding poor adhesion when an MH-Zn ferrite is used as the magnetic substrate in the above-mentioned thin film magnetic head and an insulating layer is formed thereon. This makes it possible to obtain a thin film magnetic head with high reliability and high yield.

発明の概要 本発明においては、ＭＲ型薄膜磁気ヘッドあるいは電磁
誘導型薄膜磁気ヘッドのように磁性基板上に薄膜磁気ヘ
ッド素子が形成されるものにおいて、その磁性基板とし
て特に表面性忙優れたＭｎ　−Ｚｎ系フェライトを用い
これの上に金属層例えばＡ、Ｑ、Ｃｒ、　Ｔｉ、　ＡＱ
　Ｓｉ等の単体若しくは合金よりなる金属Ｒ’１７３０
０＠〜１００ＯＸ程度に被着し、これの上にＳｉ３Ｎ４
あるいはＳ＋０２等の絶縁層を数千Ｘ乃至はそ４１以上
に被着してこれの上に薄膜磁気ヘッドを形成する。Summary of the Invention In the present invention, in a device in which a thin film magnetic head element is formed on a magnetic substrate, such as an MR type thin film magnetic head or an electromagnetic induction type thin film magnetic head, Mn - which has particularly excellent surface properties is used as the magnetic substrate. Zn-based ferrite is used and metal layers such as A, Q, Cr, Ti, AQ are formed on it.
Metal R'1730 made of Si or other element or alloy
0@~100OX, and Si3N4 is applied on top of this.
Alternatively, an insulating layer such as S+02 is deposited to a thickness of several thousand times or more than 41 times, and a thin film magnetic head is formed thereon.

実施例 第３図を参照して本発明をＭＲ型磁気ヘッドに適用する
場合の一例を説明する。Embodiment An example of applying the present invention to an MR type magnetic head will be explained with reference to FIG.

第３図は本発明によるＭＲ型磁気ヘッドの路線的拡大断
面図である。第３図において第２図と対応する部分には
同一符号を付すも、本発明にお（１ては特にＭｎ　−Ｚ
ｎ系フェライト基板（１＋を設けこＶの上にＡｍ、　Ｃ
ｒ、　’ｒｌ、　ｌ’ｙＱ−８１等の金属ＩＦＴ（１２
＋を前面的に蒸着、スパッタ等により被着形成し、これ
の上にＳ　ｉ　３Ｎ４あるいは５ｉｎ２等を周知の技術
によって数千Ｘ乃至はそれ以上の厚さに被着形成する。FIG. 3 is an enlarged sectional view of the MR magnetic head according to the present invention. In FIG. 3, parts corresponding to those in FIG.
N-type ferrite substrate (1+ is provided, and Am, C
Metal IFT (12
+ is deposited on the front surface by vapor deposition, sputtering, etc., and Si 3N4, 5in2, etc. is deposited thereon to a thickness of several thousand times or more using a well-known technique.

そしてこれの上に前述したようにＭ几素子にバイアス磁
界を与えるためのバイアス導体（２）を被着形成しこれ
の上に絶縁ｉ　＋３１　Ｙ介してＭＲ素子（４）を形成
し、更に絶縁層（５）を介して磁気コア（６）及び（７
）を形成する。尚、この場合磁気コア（７）は必要に応
じて絶縁層（１濁及び金属層０．２１１ｃ窓開を行なっ
てその後端側を磁性基板（１）に連接するようになし得
る。このようにして磁気ヘッド素子りを基板（１）上に
形成して後、前述したと同様に例えば非磁性絶縁性保護
層（８）を被覆し接着剤層（９）によって保護基板ＯＩ
の接合を行なう。Then, as described above, the bias conductor (2) for applying a bias magnetic field to the M element is formed on top of this, and the MR element (4) is formed on this through an insulator. Magnetic cores (6) and (7) via layer (5)
) to form. In this case, the magnetic core (7) can be made so that its rear end is connected to the magnetic substrate (1) by forming an insulating layer (1 mm) and a metal layer with a 0.211 cm window, if necessary. After forming the magnetic head element on the substrate (1), for example, a non-magnetic insulating protective layer (8) is coated and the protective substrate OI is covered with an adhesive layer (9) in the same manner as described above.
Perform the joining.

このような本発明による磁気ヘッドによれば、Ｍｎ　−
Ｚｎ系フェライトよりなる磁性基板ｆｉ＋を用いるにも
かかわらず、こガ、と密着性が良く比較的展性に優れた
金属ｉ　（１２１を介在させたのでこれの上に形成され
たＳｉ３Ｎ４．５ｉ０２等の絶縁層ａ９は良好にこれが
剥４．たり亀裂を生じることなく基板ｆｉｌ上に密着で
きるのでこの絶縁１１＋１３１によるこηの一ヒに形成
する例えば導体（２）との絶縁を確実に行なうことがで
きる。According to such a magnetic head according to the present invention, Mn −
Despite using a magnetic substrate fi+ made of Zn-based ferrite, metal i (Si3N4.5i02 etc. formed on top of this) has good adhesion and comparatively excellent malleability due to the interposition of metal i (121). Since the insulating layer a9 can be adhered well to the substrate fil without peeling or cracking, the insulating layer a9 can be reliably insulated from, for example, the conductor (2) formed on this insulating layer 11+131. can.

発明の効果 上述したように本発明においては、導電性を有するＭｎ
　−Ｚｎ系フェライト磁性基板（１）を用いるにかかわ
らず、これの上に形成する絶ｉ　層（＋３１を良好にこ
れに被着させることができるので、この表面性に優れた
Ｍｎ　−ｚｎ系フェライトによる磁性基板（１）ン用い
た事と相俟って信頼性が高く歩留りの高い薄膜磁気ヘッ
ドを得ることかで穴るものである。Effects of the Invention As mentioned above, in the present invention, Mn having conductivity is
- Regardless of whether a Zn-based ferrite magnetic substrate (1) is used, the insulating layer (+31) formed thereon can be well adhered to the Mn-Zn-based ferrite having excellent surface properties. In combination with the use of a magnetic substrate (1) according to the present invention, it is important to obtain a thin film magnetic head with high reliability and high yield.

【図面の簡単な説明】[Brief explanation of drawings]

第１図及び第２図は従来の薄膜磁気ヘッドの拡大平面図
及びその断面図、第３図は本発明による薄膜磁気ヘッド
の一例の拡大路線的断面図である。 ｆｉ＋は磁性基板、任ｚは金属層、（Ｉりは絶縁層、ｈ
は薄膜磁気ヘッド素子である。 第１図1 and 2 are an enlarged plan view and a sectional view thereof of a conventional thin film magnetic head, and FIG. 3 is an enlarged sectional view of an example of a thin film magnetic head according to the present invention. fi+ is a magnetic substrate, z is a metal layer, (I is an insulating layer, h
is a thin film magnetic head element. Figure 1

Claims (1)

【特許請求の範囲】[Claims] ＭローＺｎフェライトよりなる基板上に金属層を介して
絶縁層を被着し、該絶縁層上に薄膜磁気ヘッド素子が形
成されてなる薄膜磁気ヘッド。A thin film magnetic head in which an insulating layer is deposited on a substrate made of M low Zn ferrite via a metal layer, and a thin film magnetic head element is formed on the insulating layer.
JP9605283A 1983-05-31 1983-05-31 Thin film magnetic head Pending JPS59221820A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9605283A JPS59221820A (en) 1983-05-31 1983-05-31 Thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9605283A JPS59221820A (en) 1983-05-31 1983-05-31 Thin film magnetic head

Publications (1)

Publication Number Publication Date
JPS59221820A true JPS59221820A (en) 1984-12-13

Family

ID=14154684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9605283A Pending JPS59221820A (en) 1983-05-31 1983-05-31 Thin film magnetic head

Country Status (1)

Country Link
JP (1) JPS59221820A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62140217A (en) * 1985-12-14 1987-06-23 Sony Corp Thin film magnetic head

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62140217A (en) * 1985-12-14 1987-06-23 Sony Corp Thin film magnetic head

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