JPS62273734A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To effectively ignite hydrogen discharged into an oxygen atmosphere by piping at least an oxygen introduction tube along the wall in a core tube heated directly by a heater. CONSTITUTION:Oxygen is heated to a high temperature by means of radiation heat from the tube wall heated by a heater 16 when the oxygen flows along the inner wall of a core tube 11 heated by the heater 16 in a tube 14, and when the oxygen heated to the high temperature is discharged from an oxygen introduction tube opening 15, the temperature of the part of a hydrogen introduction tube opening 13 becomes higher than the igniting temperature of the hydrogen in the oxygen even when the heating temperature of the heater 16 is low. Thus, when the hydrogen introduced from a hydrogen introduction tube 12 is discharged from the opening 13, it is immediately ignited smoothly to generate a clean steam due to the combustion of the hydrogen and the oxygen. Thus, the combustion of the hydrogen can be smoothly and safely performed in a range of lower temperature of the furnace, and the formation of a thin oxide film due to the miniaturization of a semiconductor device and good controllability of steam process at lower temperature safely in manufacturing steps of the semiconductor device.

Description

Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to semiconductor manufacturing equipment, and in particular, the present invention relates to semiconductor manufacturing equipment, in particular, the generation of water vapor by mixed combustion of hydrogen and oxygen, and the oxidation of semiconductor devices by the water vapor. Or it relates to a semiconductor manufacturing device that performs water vapor treatment.

[Conventional technology]

In the manufacturing process of semiconductor devices, when oxidation or steam treatment is performed in a steam atmosphere, a method of burning hydrogen and oxygen in a furnace tube is used to obtain clean steam.

As shown in FIG. 2, the furnace in this case introduces hydrogen through the hydrogen introduction tube 22 inserted into the furnace core tube 21, releases it from the opening 23 of the hydrogen introduction tube 22, and oxygen from the oxygen introduction tube 24. is introduced and released from the opening 25 of the oxygen introduction tube 24, and the hydrogen and oxygen are mixed and combusted within the furnace core tube 21.

First, oxygen is released from the oxygen introduction tube opening 25, and the furnace core tube 2
After creating an oxygen atmosphere inside 1, hydrogen is introduced into the hydrogen introduction pipe opening 2.
When hydrogen is released from 3, if the heater 26 is sufficiently heated so that the hydrogen introduction tube opening 23 sufficiently exceeds the ignition point of hydrogen in oxygen of 450°C, when hydrogen is released, The fire ignites immediately and smoothly, steam is generated, and the inside of the furnace core tube 21 becomes a clean steam atmosphere.

[Problem that the invention seeks to solve]

However, in the above-mentioned oxidation furnace, the hydrogen introduction tube opening 23 is located away from the heater 26, and there is a cooling effect by releasing room temperature oxygen from the oxygen introduction tube opening 25. Therefore, when the heater 26 is heated, the hydrogen introduction tube opening 2
If the heating temperature by the heater 26 is low, the ignition temperature of hydrogen gas in oxygen will not reach 450°C at the hydrogen introduction tube opening 23. Therefore, even when hydrogen is released, the hydrogen does not ignite immediately, but spreads inside the furnace core tube 21 toward the heater 26, and ignites when it spreads to a position where the temperature is higher than the ignition temperature of hydrogen, but ignites. There is a serious drawback in that the hydrogen that has spread inside the furnace core tube 21 before igniting at the time of ignition explodes in an instant, and there is a danger that the furnace core tube may be blown away in some cases. An object of the present invention is to provide a semiconductor manufacturing apparatus that reliably ignites hydrogen released into the atmosphere.

[Means for solving problems]

The present invention includes a furnace core tube, an oxygen introduction tube and a hydrogen introduction tube inserted into the furnace core tube, and a heater that heats the furnace core tube, and at least the oxygen introduction tube is directly heated by the heater. The semiconductor manufacturing apparatus is characterized in that piping is arranged along a tube wall in the furnace core tube.

〔Example〕

Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

In FIGS. 1(a) and 1(b), a heater 16 is installed on the outer periphery of the furnace core tube 11, and a hydrogen introduction tube 12 for supplying hydrogen and a hydrogen introduction tube 12 for supplying oxygen are installed at the tube ends within the furnace core tube 1. An oxygen introduction pipe 14 is provided. The present invention extends the oxygen introduction tube 14 in the longitudinal direction inside the furnace core tube 11, connects it along the inner wall of the furnace core tube 11 that is directly heated by an external heater 16, and then bends the oxygen introduction tube 14. The opening 15 of 14 is provided facing the opening 13 of the hydrogen introduction pipe 12.

According to the present invention, while oxygen flows through the tube 14 along the inner wall of the furnace core tube 11 heated by the heater 16, it receives radiant heat from the tube wall heated by the heater 16 and is heated to a high temperature.
By discharging the heated oxygen from the oxygen introduction tube opening 15, even when the heating temperature of the heater 16 is low, the temperature at the hydrogen introduction tube opening 13 becomes higher than the ignition temperature of hydrogen in oxygen. When the hydrogen introduced from the hydrogen introduction pipe 12 is released from the hydrogen introduction pipe opening 13, it is immediately and smoothly ignited, and clean water vapor is generated by combustion of hydrogen and oxygen.

FIG. 1(b) is a sectional view taken along the line A--A in FIG. 1(a) of a portion heated by a heater according to an embodiment of the present invention. In this embodiment, in order to enhance the heating effect by the heater 16, the oxygen introduction tube 14 is made larger in diameter than the oxygen introduction tube opening 15, and furthermore, in order not to obstruct the entry and exit of the semiconductor substrate into the furnace core tube, the oxygen introduction tube 14 is made larger in diameter than the oxygen introduction tube opening 15. It is attached to the upper inner wall of No. 11.

In this example, the oxygen introduction tube was passed through the heated part of the heater of the furnace core tube, but it is also possible to pass the hydrogen introduction pipe through the heated part of the furnace core tube by the heater. The same effect can be obtained by passing both the hydrogen and hydrogen inlet tubes through the heated portion of the furnace core tube.

[Effects of the Invention] As explained in detail above, according to the present invention, hydrogen can be burned smoothly and safely in the lower temperature range of the furnace, and the formation of thin oxide films accompanying miniaturization of semiconductor devices can be achieved. Also, in the semiconductor device manufacturing process, there is an effect that water vapor treatment can be performed safely and with good controllability at a lower temperature.

[Brief explanation of the drawing]

FIG. 1(a) is a longitudinal cross-sectional view of a semiconductor device manufacturing apparatus of the present invention, FIG. 1(b) is a cross-sectional view taken along line A-A in FIG. 1(a), and FIG. 2 is a longitudinal cross-sectional view showing a conventional apparatus. . 11... Furnace core tube, 12... Hydrogen introduction tube, 13...
Hydrogen introduction pipe opening, 14...Oxygen introduction pipe, 15...
Oxygen introduction pipe opening, 16... heater

Claims (1)

[Claims] (1) It has a furnace core tube, an oxygen introduction tube and a hydrogen introduction tube inserted into the furnace core tube, and a heater that heats the furnace core tube, and at least the oxygen introduction tube is directly heated by the heater. A semiconductor manufacturing device characterized by piping running along a tube wall within a furnace core tube.