JPS622629B2 - - Google Patents
Info
- Publication number
- JPS622629B2 JPS622629B2 JP10632183A JP10632183A JPS622629B2 JP S622629 B2 JPS622629 B2 JP S622629B2 JP 10632183 A JP10632183 A JP 10632183A JP 10632183 A JP10632183 A JP 10632183A JP S622629 B2 JPS622629 B2 JP S622629B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- plating bath
- plating
- magnetization
- mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007747 plating Methods 0.000 claims description 63
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 25
- 229910001429 cobalt ion Inorganic materials 0.000 claims description 15
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 claims description 15
- 229910021645 metal ion Inorganic materials 0.000 claims description 15
- 229910001453 nickel ion Inorganic materials 0.000 claims description 14
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical group [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 claims description 10
- 239000008139 complexing agent Substances 0.000 claims description 7
- 238000007772 electroless plating Methods 0.000 claims description 5
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 claims description 4
- 239000000872 buffer Substances 0.000 claims description 3
- 239000003638 chemical reducing agent Substances 0.000 claims description 3
- 229910020630 Co Ni Inorganic materials 0.000 claims 1
- 229910002440 Co–Ni Inorganic materials 0.000 claims 1
- 239000000470 constituent Substances 0.000 claims 1
- 230000005415 magnetization Effects 0.000 description 28
- 239000013078 crystal Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910018104 Ni-P Inorganic materials 0.000 description 5
- 229910018536 Ni—P Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical group FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 3
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 3
- 235000011130 ammonium sulphate Nutrition 0.000 description 3
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 3
- 229940044175 cobalt sulfate Drugs 0.000 description 3
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 3
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 3
- -1 organic acid salts Chemical class 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- FQENQNTWSFEDLI-UHFFFAOYSA-J sodium diphosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])([O-])=O FQENQNTWSFEDLI-UHFFFAOYSA-J 0.000 description 3
- 229940048086 sodium pyrophosphate Drugs 0.000 description 3
- 235000019818 tetrasodium diphosphate Nutrition 0.000 description 3
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 235000011180 diphosphates Nutrition 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 229940048084 pyrophosphate Drugs 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical group OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- 229910021503 Cobalt(II) hydroxide Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910020680 Co—Ni—Mn Inorganic materials 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical group OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000000539 amino acid group Chemical group 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 125000005619 boric acid group Chemical group 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- ASKVAEGIVYSGNY-UHFFFAOYSA-L cobalt(ii) hydroxide Chemical compound [OH-].[OH-].[Co+2] ASKVAEGIVYSGNY-UHFFFAOYSA-L 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N malonic acid group Chemical group C(CC(=O)O)(=O)O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical group O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910001380 potassium hypophosphite Chemical group 0.000 description 1
- CRGPNLUFHHUKCM-UHFFFAOYSA-M potassium phosphinate Chemical group [K+].[O-]P=O CRGPNLUFHHUKCM-UHFFFAOYSA-M 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- PRWXGRGLHYDWPS-UHFFFAOYSA-L sodium malonate Chemical compound [Na+].[Na+].[O-]C(=O)CC([O-])=O PRWXGRGLHYDWPS-UHFFFAOYSA-L 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid group Chemical group C(CCC(=O)O)(=O)O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical class NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Chemically Coating (AREA)
Description
【発明の詳細な説明】
本発明は磁気記録媒体の膜厚方向の磁化によつ
て記録を行なういわゆる垂直記録に用いる磁気記
録媒体を作製するめつき浴に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a plating bath for producing a magnetic recording medium used for so-called perpendicular recording in which recording is performed by magnetization in the direction of the film thickness of the magnetic recording medium.
従来、一般の磁気デイスク装置、磁気テープ装
置などの磁気記録装置においては、基板上に形成
された磁性膜を、リング型磁気ヘツドによつて水
平方向に磁化することにより記録を行なつてい
る。しかし水平磁化による記録には、記録信号
が、短波長になるに従い、すなわち記録密度の増
加にしたがつて、媒体内の反磁界が増大して、残
留磁化の減衰と回転を生じ、再生出力が著じるし
く減少するという欠点が存在する。そこでこの問
題解決のため、短波長になる程、反磁界が小さく
なる性質をもつ垂直記録方式が提案され、この垂
直記録に適した磁性膜としては、膜面に垂直な方
向に磁化容易軸をもつCo―Cr合金スパツタ膜が
提案されている。そしてこの垂直磁化記録方式
は、従来の水平方向の磁化による記録方式に比べ
て高密度記録にすぐれていることが報告されてい
る。ところでCo―Cr合金膜をスパツタ法で作製
する場合、真空系内で行うため量産性に問題があ
ること、及びスパツタによる基板温度の上昇によ
つて使用する基板材質に制限を与えるという問題
がある。 Conventionally, in magnetic recording devices such as general magnetic disk devices and magnetic tape devices, recording is performed by horizontally magnetizing a magnetic film formed on a substrate using a ring-shaped magnetic head. However, in recording using horizontal magnetization, as the wavelength of the recording signal becomes shorter, that is, as the recording density increases, the demagnetizing field within the medium increases, causing attenuation and rotation of the residual magnetization, and the reproduction output decreases. The disadvantage is that it is significantly reduced. To solve this problem, a perpendicular recording method was proposed in which the demagnetizing field becomes smaller as the wavelength becomes shorter.A magnetic film suitable for this perpendicular recording has an axis of easy magnetization perpendicular to the film surface. A sputtered Co-Cr alloy film has been proposed. It has been reported that this perpendicular magnetization recording method is superior to the conventional recording method using horizontal magnetization in high-density recording. However, when producing a Co-Cr alloy film using the sputtering method, there are problems with mass production because it is performed in a vacuum system, and there is a problem in that the substrate temperature increases due to sputtering, which limits the substrate material that can be used. .
本発明の目的は、これらの製造上の問題点を改
善して量産性にすぐれ、金属基板のみならず一般
に普及している有機樹脂基板の軟化温度以下で作
製可能な無電解めつき法により、膜面に垂直な方
向に磁化容易軸をもつ磁性膜を製造する無電解め
つき浴を提供することにある。 The purpose of the present invention is to solve these manufacturing problems by using an electroless plating method that is excellent in mass productivity and that can be manufactured at a temperature below the softening temperature of not only metal substrates but also commonly used organic resin substrates. An object of the present invention is to provide an electroless plating bath for producing a magnetic film having an axis of easy magnetization in a direction perpendicular to the film surface.
本発明の特徴は、少なくとも金属イオン、金属
イオンの還元剤、PH緩衝剤、PH調節剤、前記金属
イオンの錯化剤を含む無電解めつき浴において(1)
金属イオンとして0.1mol/以上のコバルトイオ
ン(Co2+)および0.1mol/以上のニツケルイオ
ン(Ni2+)、(2)金属イオンの錯化剤として少なく
ともピロリン酸基を含み、めつき浴温度が55〜75
℃でPHが65℃で8.0〜10.0の範囲に調節されたこ
とでありこれにより磁性膜の磁化容易軸を膜面に
対し、垂直な方向に向けることができる。 A feature of the present invention is that an electroless plating bath containing at least a metal ion, a metal ion reducing agent, a PH buffer, a PH regulator, and a complexing agent for the metal ion (1)
Cobalt ion (Co 2+ ) of 0.1 mol/or more and nickel ion (Ni 2+ ) of 0.1 mol/more as metal ions, (2) Contains at least a pyrophosphate group as a complexing agent for metal ions, and plating bath temperature is 55-75
The PH was adjusted to a range of 8.0 to 10.0 at 65°C, which made it possible to orient the axis of easy magnetization of the magnetic film in a direction perpendicular to the film surface.
本発明において金属イオンとして用いられるコ
バルトイオン(Co2+)およびニツケルイオン
(Ni2+)としては、コバルトおよびニツケルの硫酸
塩、スルフアミン酸塩、塩化塩、酢酸塩などの可
溶性塩を無電解めつき浴中に溶解することによつ
て供給される。コバルトイオンの濃度は0.1mol/
以上の範囲が用いられるが、コバルトイオン濃
度が増すとめつき浴は除々に不安定になり、特に
コバルトイオン濃度が0.2mol/以上になると短
時間に水酸化コバルトの沈殿を生じ浴寿命が著じ
るしく低下する。したがつて結晶性の観点から
は、特に上限を設ける必要はないが、実用的に、
好ましくは、コバルトイオン濃度は0.1〜0.2mol/
の範囲である。またニツケルイオンの濃度は
0.1mol/以上の範囲が用いられるが、ニツケル
イオン濃度が0.4mol/以上になるとめつき粒子
がめつき浴中に異常析出しやすくなり、これによ
つて浴寿命が低下する。したがつて結晶性の観点
からは、特に上限を設ける必要はないが実用的に
好ましくは、ニツケルイオン濃度は0.1〜0.4mol/
の範囲である。 As cobalt ions (Co 2+ ) and nickel ions (Ni 2+ ) used as metal ions in the present invention, soluble salts of cobalt and nickel such as sulfates, sulfamates, chlorides, and acetates can be prepared using an electroless method. It is supplied by dissolving it in a soaking bath. The concentration of cobalt ion is 0.1mol/
The above range is used, but as the cobalt ion concentration increases, the plating bath gradually becomes unstable, and especially when the cobalt ion concentration exceeds 0.2 mol/min, cobalt hydroxide precipitates in a short period of time, significantly shortening the bath life. decreases significantly. Therefore, from the viewpoint of crystallinity, there is no need to set an upper limit, but for practical purposes,
Preferably, the cobalt ion concentration is 0.1-0.2 mol/
is within the range of Also, the concentration of nickel ions is
A range of 0.1 mol/or more is used, but if the nickel ion concentration is 0.4 mol/or more, the plating particles tend to abnormally precipitate in the plating bath, thereby reducing the bath life. Therefore, from the viewpoint of crystallinity, it is not necessary to set a particular upper limit, but it is practically preferable that the nickel ion concentration is 0.1 to 0.4 mol/
is within the range of
金属イオンの還元剤としては、一般に次亜リン
酸ナトリウムまたは、次亜リン酸カリウム等次亜
リン酸基が用いられる。 As a reducing agent for metal ions, hypophosphorous acid groups such as sodium hypophosphite or potassium hypophosphite are generally used.
PH緩衝剤としては一般にアンモニウム塩、炭酸
塩、有機酸塩などが用いられる。 Ammonium salts, carbonates, organic acid salts, etc. are generally used as PH buffers.
PH調節剤としてはPHの上昇には一般にアンモニ
ア水または、アンモニア水と水酸化ナトリウム水
酸化カリウム等苛性アルカリが併用される。PHの
降下には、一般に硫酸、スルフアミン酸、塩酸、
酢酸等の酸が用いられ、これらPH調節剤により、
めつき浴のPHは常に65℃を基準として8.0〜10.0
に調節される。 As a pH regulator, ammonia water or a combination of ammonia water and a caustic alkali such as sodium hydroxide and potassium hydroxide is generally used to increase the pH. Generally, sulfuric acid, sulfamic acid, hydrochloric acid,
Acids such as acetic acid are used, and with these PH regulators,
The pH of the plating bath is always 8.0 to 10.0 based on 65℃.
adjusted to.
金属イオンの錯化剤としてのピロリン酸基は、
ピロリン酸またはピロリン酸の可溶性塩によつて
供給される。さらに錯化剤としてピロリン酸基以
外に、ホウ酸基、アミノ酸基、マロン酸基、リン
ゴ酸基、コハク酸基、グルコン酸基等、無機酸ま
たは有機酸またはこれらの可溶性塩を併用しても
よい。 Pyrophosphate group as a complexing agent for metal ions
Supplied by pyrophosphate or soluble salts of pyrophosphate. Furthermore, in addition to pyrophosphate groups, inorganic or organic acids, such as boric acid groups, amino acid groups, malonic acid groups, malic acid groups, succinic acid groups, gluconic acid groups, or their soluble salts may be used in combination as complexing agents. good.
本発明者は、ピロリン酸基を含むアンモニアア
ルカリ性無電解Co―Ni―Pめつき浴について、
コバルトイオン(Co2+)濃度ニツケルイオン
(Ni2+)濃度を種々変化させて析出するめつき膜の
結晶性を調査結果を調すグラフが、第1図及び第
2図である。第1図はコバルトイオン(Co2+)お
よびニツケルイオン(Ni2+)濃度と得られるCo―
Ni―Pめつき膜の結晶性の関係を示すグラフで
あり、図中はめつき膜結晶の磁化容易軸(C
軸)が面内配向する領域、は磁化容易軸が面内
および垂直方向に等方配向するかまたは垂直方向
に弱く配向する領域、は磁化容易軸が強く垂直
配向する領域である。また第2図はめつき浴中の
コバルトイオン(Co2+)濃度をパラメーターとし
た時、めつき膜厚5μにおけるニツケルイオン
(Ni2+)濃度と得られるめつき膜のCo(002)面の
X線回析強度の関係を示したグラフであり、第2
図は、コバルトイオン(Co2+)およびニツケルイ
オン(Ni2+)濃度がともに0.1mol/以上の時、得
られるめつき膜のCo(002)面が、きわめて強く
発達することを示している。 The present inventor has disclosed that regarding an ammonia alkaline electroless Co-Ni-P plating bath containing a pyrophosphate group,
FIGS. 1 and 2 are graphs showing the results of investigating the crystallinity of plated films deposited by varying the cobalt ion (Co 2+ ) and nickel ion (Ni 2+ ) concentrations. Figure 1 shows the cobalt ion (Co 2+ ) and nickel ion (Ni 2+ ) concentrations and the resulting Co−
This is a graph showing the relationship between the crystallinity of the Ni--P plated film. In the figure, the easy axis of magnetization (C
The region where the easy axis of magnetization is oriented in-plane, the region where the easy axis of magnetization is isotropically oriented in the plane and in the vertical direction, or the region where the easy axis of magnetization is weakly oriented in the vertical direction, and the region where the easy axis of magnetization is strongly oriented vertically. Figure 2 also shows the relationship between the nickel ion (Ni 2+ ) concentration at a plating film thickness of 5μ and the Co(002) surface of the resulting plating film, when the cobalt ion (Co 2+ ) concentration in the plating bath is taken as a parameter. It is a graph showing the relationship between X-ray diffraction intensity, and the second
The figure shows that when the cobalt ion (Co 2+ ) and nickel ion (Ni 2+ ) concentrations are both 0.1 mol/or higher, the Co (002) plane of the resulting plated film develops extremely strongly. .
即ち、金属イオンの錯化剤としてピロリン酸基
を含むアンモニアアルカリ性無電解Co―Ni―P
めつき浴について析出するめつき膜の結晶構造に
対するめつき浴組成および条件の影響を詳細に検
討した結果、ピロリン酸基がめつき浴中に存在
し、なおかつめつき浴温度が55〜75℃の範囲にお
いて、めつき浴中のコバルトイオン(Co2+)およ
びニツケルイオン(Ni2+)濃度がともに0.1mol/
以上になつた時(第1図領域)、析出めつき膜
の結晶はCo(002)面に選択的に強く発達し、α
―Co六方晶の磁化容易軸(C軸)が膜面に対し
て垂直方向に高配向化することを新たに見出した
ものである。この際上記条件のうち一つでも欠け
た場合、得られるめつき膜は、Co(002)面の発
達が弱まり、磁化容易軸の垂直配向性は弱まり、
または面内方向に配向化し、前記本発明の目的を
満足することができない。 That is, an ammonia alkaline electroless Co-Ni-P containing a pyrophosphate group as a complexing agent for metal ions.
As a result of a detailed study of the influence of the plating bath composition and conditions on the crystal structure of the plating film deposited in the plating bath, it was found that pyrophosphate groups exist in the plating bath and the plating bath temperature is in the range of 55 to 75℃. , the cobalt ion (Co 2+ ) and nickel ion (Ni 2+ ) concentrations in the plating bath were both 0.1 mol/
above (region in Figure 1), the crystals of the precipitated plated film develop selectively and strongly on the Co (002) plane, and α
- It was newly discovered that the easy axis of magnetization (C axis) of Co hexagonal crystals is highly oriented in the direction perpendicular to the film surface. At this time, if even one of the above conditions is lacking, the resulting plated film will have weaker development of the Co (002) plane and weaker vertical orientation of the axis of easy magnetization.
Or, the object of the present invention cannot be satisfied due to orientation in the in-plane direction.
めつき浴中のコバルトイオン(Co2+)およびニ
ツケルイオン(Ni2+)濃度が0.1mol/以下の場
合、めつき膜結晶の磁化容易軸の垂直配向性は弱
まり、さらには両内配向化する。まためつき浴中
にピロリン酸基が存在しない場合、めつき浴温度
が55〜75℃では、めつき膜は殆んど析出しない
か、析出してもその速度はきわめて遅く、まため
つき膜結晶はCo(100)面に配向する。一方めつ
き浴温度が55℃以下の場合、めつきはほとんど析
出せず、75℃以上の場合はめつき膜結晶のCo
(002)面への発達は極端に低下する。まためつき
浴PHの影響は金属イオン濃度およびめつき浴温度
ほど大きくはないが、めつき浴温度65℃を基準と
して考えた場合、PHを8.0〜10.0に調整しない
と、めつき浴中に沈澱が生じ、めつき浴が不安定
になるため、有用なめつき浴とならない。 When the concentration of cobalt ions (Co 2+ ) and nickel ions (Ni 2+ ) in the plating bath is less than 0.1 mol/min, the perpendicular orientation of the easy axis of magnetization of the plating film crystals weakens, and even the internal orientation do. In addition, if there is no pyrophosphate group in the plating bath and the plating bath temperature is 55 to 75°C, the plating film will hardly precipitate, or even if it does, the rate of precipitation is extremely slow; The crystals are oriented on the Co(100) plane. On the other hand, when the plating bath temperature is 55°C or lower, almost no plating is deposited, and when it is 75°C or higher, Co of the plating film crystals is deposited.
Development to the (002) plane is extremely reduced. In addition, the effect of plating bath pH is not as great as metal ion concentration and plating bath temperature, but when considering a plating bath temperature of 65℃ as a standard, if the pH is not adjusted to 8.0 to 10.0, Since precipitation occurs and the plating bath becomes unstable, it is not a useful plating bath.
従来、金属イオンの錯化剤としてピロリン酸基
を用いたアンモニアアルカリ性浴からCo―Ni―
Pめつき膜が得られることは公知である(金属表
面技術協会誌VOI31No.3 1980参照)。しかし無
電解めつきにより垂直磁化膜を得るためには、
Co―Ni―Mn―P(金属表面技術協会第65回学術
講演大会要旨集P136〜137参照)やCo―Ni―Mn
―Re―P(金属表面技術協会第66回学術講演大
会要旨集P8〜9参照)等のようにCo,Ni,P以
外にMn,Re等他種金属を、添加し、なおかつめ
つき浴温度を80℃以上としなければ、すぐれた垂
直磁化特性を得られなかつた。本発明のめつき浴
から得られる無電解めつき膜は基本的にCo,
Ni,Pの3元ですぐれた垂直磁化特性が得ら
れ、かつめつき浴温度が55〜75℃と低温であるた
め、めつき浴条件のコントロールがきわめて容易
になる特長を合わせ持つものである。 Conventionally, Co-Ni-
It is known that a P-plated film can be obtained (see Metal Surface Technology Association Journal VOI31 No. 3 1980). However, in order to obtain a perpendicularly magnetized film by electroless plating,
Co-Ni-Mn-P (see Abstracts of the 65th Academic Conference of the Metal Surface Technology Society, pages 136-137) and Co-Ni-Mn
In addition to Co, Ni, and P, other metals such as Mn and Re are added, such as -Re-P (see Abstracts of the 66th Academic Conference of the Metal Surface Technology Society, pages 8 to 9), and the temperature of the plating bath is increased. Excellent perpendicular magnetization characteristics could not be obtained unless the temperature was set at 80°C or higher. The electroless plated film obtained from the plating bath of the present invention basically consists of Co,
Excellent perpendicular magnetization characteristics can be obtained from the three elements Ni and P, and the plating bath temperature is as low as 55 to 75°C, making it extremely easy to control the plating bath conditions. .
以下本発明による無電解Co―Ni―Pめつき浴
の特長を実施例により説明する。 The features of the electroless Co--Ni--P plating bath according to the present invention will be explained below using examples.
実施例 1
表面に無電解NiPめつき膜を施した銅基板に、
下記のめつき浴組成およびめつき条件にてその上
にCo―Ni―P膜(膜厚5μ)を形成した。Example 1 A copper substrate with an electroless NiP plating film on the surface,
A Co--Ni--P film (film thickness: 5 μm) was formed thereon using the following plating bath composition and plating conditions.
めつき浴組成
硫酸コバルト 0.13mol/
硫酸ニツケル 0.13mol/
次亜リン酸ナトリウム 0.2 mol/
硫酸アンモニウム 0.5 mol/
ピロリン酸ナトリウム 0.4 mol/
めつき条件
めつき浴のPH9.0(65℃にてNH4OHでPH微調
節)
めつき浴温度65℃
この時めつき析出速度は約0.16mg/cm2/分であ
り、膜厚5μを得るのに約28分要した。析出めつ
き膜の結晶構造を調べるためにX線回析を行なつ
た結果を第3図に示す。得られたCo―Ni―Pめ
つき膜結晶はCo(002)面が、きわめて強く成長
し、結晶C軸が膜面に対し、垂直方向に強く配向
していることがわかる、この時のCo(002)面の
ロツキング曲線を測定したところその半値幅△θ
50の分散角はおよそ9.5℃であつた。めつき膜の
垂直方向および水平方向の磁化ヒステリシス特性
を振動型磁力計(VSM)で測定した結果を第4
図に示す。Plating bath composition Cobalt sulfate 0.13 mol/ Nickel sulfate 0.13 mol/ Sodium hypophosphite 0.2 mol/ Ammonium sulfate 0.5 mol/ Sodium pyrophosphate 0.4 mol/ Plating conditions Plating bath PH9.0 (NH 4 OH at 65℃) Plating bath temperature was 65° C. At this time, the plating deposition rate was about 0.16 mg/cm 2 /min, and it took about 28 minutes to obtain a film thickness of 5 μm. FIG. 3 shows the results of X-ray diffraction carried out to examine the crystal structure of the deposited plating film. It can be seen that in the obtained Co-Ni-P plated film crystal, the Co (002) plane grows extremely strongly, and the crystal C axis is strongly oriented in the direction perpendicular to the film surface. When the rocking curve of the (002) plane was measured, its half-value width △θ
The dispersion angle of 50 was approximately 9.5°C. The results of measuring the vertical and horizontal magnetization hysteresis characteristics of the plated film using a vibrating magnetometer (VSM) are shown in the fourth section.
As shown in the figure.
実施例 2
実施例1と同様の手順で、下記のめつき浴組成
にてCo―Ni―P膜(膜厚5μ)を形成した。Example 2 A Co--Ni--P film (film thickness: 5 μm) was formed using the following plating bath composition in the same manner as in Example 1.
めつき浴組成
硫酸コバルト 0.14mol/
硫酸ニツケル 0.28mol/
次亜リン酸ナトリウム 0.2mol/
硫酸アンモニウム 0.5mol/
ピロリン酸ナトリウム 0.4mol/
ホウ酸(無水) 0.1mol/
めつき条件
めつき浴のPH9.0(65℃にてNH4OHでPH微調
整)
めつき浴温度65℃
この時のめつき析出速度は約0.15mg/cm2/分で
あり、膜厚5μを得るのに約30分要した。析出め
つき膜の結晶構造は実施例1と同様にCo(002)
面が、きわめて強く成長し、結晶C軸が膜面に対
し、垂直方向に強く配向した。この時、Co
(002)面のロツキング曲線半値幅△θ50の分散角
はおよそ9.0゜であつた。めつき膜の磁化ヒステ
リシス特性は実施例1に類似したものが得られ
た。Plating bath composition Cobalt sulfate 0.14mol/ Nickel sulfate 0.28mol/ Sodium hypophosphite 0.2mol/ Ammonium sulfate 0.5mol/ Sodium pyrophosphate 0.4mol/ Boric acid (anhydrous) 0.1mol/ Plating conditions Plating bath PH9.0 (PH fine adjustment with NH 4 OH at 65℃) Plating bath temperature 65℃ The plating deposition rate at this time was about 0.15mg/cm 2 /min, and it took about 30 minutes to obtain a film thickness of 5μ. . The crystal structure of the deposited plating film is Co(002) as in Example 1.
The surface grew extremely strongly, and the crystal C axis was strongly oriented in the direction perpendicular to the film surface. At this time, Co
The dispersion angle of the half-value width Δθ 50 of the rocking curve of the (002) plane was approximately 9.0°. The magnetization hysteresis characteristics of the plated film were similar to those in Example 1.
実施例 3
実施例1と同様の手順で下記のめつき浴組成に
てCo―Ni―P膜(膜厚5μ)を形成した。Example 3 A Co--Ni--P film (film thickness: 5 μm) was formed using the following plating bath composition in the same manner as in Example 1.
めつき浴組成
硫酸コバルト 0.15mol/
硫酸ニツケル 0.13mol/
次亜リン酸ナトリウム 0.2mol/
硫酸アンモニウム 0.5mol/
ピロリン酸ナトリウム 0.4mol/
マロン酸ナトリウム 0.1mol/
めつき条件
めつき浴のPH9.0(65℃にてNH4OHでPH微調
整)
めつき浴温度65℃
この時のめつき析出速度は約0.14mg/cm2/分で
あり、膜厚5μを得るのに約32分要した。析出め
つき膜の結晶構造は実施例1と同様にCo(002)
面がきわめて強く成長し、結晶C軸や膜面に対
し、垂直方向に強く配向した。この時Co(002)
面のロツキング曲線半値幅△θ50の分散角はおよ
そ9.0゜であつた。めつき膜の磁化ヒステリシス
特性は、実施例1に類似したものが得られた。Plating bath composition Cobalt sulfate 0.15mol/ Nickel sulfate 0.13mol/ Sodium hypophosphite 0.2mol/ Ammonium sulfate 0.5mol/ Sodium pyrophosphate 0.4mol/ Sodium malonate 0.1mol/ Plating conditions Plating bath PH9.0 (65 Plating bath temperature: 65 ° C. The plating deposition rate at this time was about 0.14 mg/cm 2 /min, and it took about 32 minutes to obtain a film thickness of 5 μm. The crystal structure of the deposited plating film is Co(002) as in Example 1.
The plane grew extremely strongly and was strongly oriented in the direction perpendicular to the crystal C axis and the film plane. At this time Co (002)
The dispersion angle of the half-width Δθ 50 of the rocking curve of the surface was approximately 9.0°. The magnetization hysteresis characteristics of the plated film were similar to those in Example 1.
以上のように実施例1〜3において本発明の請
求の範囲に記載されためつき浴より得られるCo
―Ni―P膜はそのC軸が基板に対して垂直方向
を向き、かつ磁化ヒステリシス特性も垂直磁化記
録の磁気記録媒体に用いることができることを示
している。 As mentioned above, in Examples 1 to 3, Co obtained from the accumulating bath described in the claims of the present invention
The C-axis of the -Ni-P film is oriented perpendicular to the substrate, and the magnetization hysteresis property indicates that it can be used in a magnetic recording medium for perpendicular magnetization recording.
なお実施例では金属基板の場合について述べた
が有機樹脂基板例えばポリエステルやポリイミド
フイルムを用いる場合、これらフイルム表面にあ
らかじめパラジウムを蒸着し、触媒活性とした後
実施例と同様のめつき条件でめつきすることによ
り実施例と同様にα―Co六方晶のC軸が垂直配
向したCo―Ni―P膜が得られた。 In addition, although the case of a metal substrate was described in the example, when an organic resin substrate such as polyester or polyimide film is used, palladium is vapor-deposited on the surface of the film in advance to make it catalytically active, and then plated under the same plating conditions as in the example. As a result, a Co--Ni--P film in which the C-axis of the α-Co hexagonal crystal was vertically oriented was obtained as in the example.
以上、実施例で示された様に本発明によれば、
磁気記録媒体となる磁性膜の磁化容易軸を膜面に
垂直な方向に配向することができる。 As shown in the examples above, according to the present invention,
The axis of easy magnetization of a magnetic film serving as a magnetic recording medium can be oriented in a direction perpendicular to the film surface.
第1図は、コバルトイオン(Co2+)およびニツ
ケルイオン(Ni2+)濃度と得られるCo―Ni―Pめ
つき膜の結晶性の関係を示すグラフであり、図中
はめつき膜結晶の磁化容易軸が面内配向する領
域、図中は磁化容易軸が面内および垂直方向に
等方配向するかまたは垂直方向に弱く配向する領
域、図中は磁化容易軸が強く垂直配向する領域
で、本発明の請求の範囲である。第2図は、めつ
き浴中のコバルトイオン(Co2+)濃度をパラメー
ターとした時、めつき膜厚5μにおけるニツケル
イオン(Ni2+)濃度と得られるめつき膜のCo
(002)面のX線回析強度の関係をグラフで示した
ものである。第3図は、本発明で得られた無電解
Co―Ni―Pめつき膜のX線回析曲線の一例。第
4図は、本発明で得られた無電解Co―Ni―Pめ
つき膜の膜面に対し、垂直方向(実線)および水
平方向(破線)における磁化ヒステリシス曲線で
あり減磁界補正を行なつていないものである。
Figure 1 is a graph showing the relationship between the cobalt ion (Co 2+ ) and nickel ion (Ni 2+ ) concentrations and the crystallinity of the resulting Co--Ni--P plated film. A region where the easy axis of magnetization is oriented in-plane; the figure shows a region where the easy axis of magnetization is isotropically oriented in the plane and in the perpendicular direction, or a region where the easy axis is weakly oriented in the perpendicular direction; a region where the easy axis of magnetization is strongly oriented vertically in the figure. , are the scope of the claims of the present invention. Figure 2 shows the relationship between the nickel ion (Ni 2+ ) concentration at a plating film thickness of 5 μm and the Co of the resulting plating film, when the cobalt ion (Co 2+ ) concentration in the plating bath is taken as a parameter.
This is a graph showing the relationship between the X-ray diffraction intensity of the (002) plane. Figure 3 shows the electroless
An example of an X-ray diffraction curve of a Co-Ni-P plated film. Figure 4 shows magnetization hysteresis curves in the vertical direction (solid line) and horizontal direction (broken line) with respect to the film surface of the electroless Co--Ni--P plated film obtained by the present invention, and the demagnetization field correction is performed. It is something that has not been done yet.
Claims (1)
オン、金属イオンの還元剤、PH緩衝剤、PH調節
剤、前記金属イオンの錯化剤を含む無電解めつき
浴において(1)金属イオンとして0.1mol/以上の
コバルトイオン(Co2+)および0.1mol/以上の
ニツケルイオン(Ni2+)、(2)金属イオンの錯化剤
として少なくともピロリン酸基を含み、めつき浴
の温度が55〜75℃で、PHが65℃で8.0〜10.0の範
囲に調節されたことを特徴とする無電解Co―Ni
―Pめつき浴。1. In an electroless plating bath containing at least metal ions, a reducing agent for metal ions, a PH buffer, a PH regulator, and a complexing agent for the metal ions as constituent elements of the plating bath, (1) 0.1 mol/ml as metal ions; or more cobalt ions (Co 2+ ) and 0.1 mol/or more nickel ions (Ni 2+ ), (2) at least a pyrophosphate group as a complexing agent for metal ions, and the plating bath temperature is 55 to 75°C. Electroless Co-Ni characterized by having a pH adjusted to a range of 8.0 to 10.0 at 65℃.
- P eye bath.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10632183A JPS59232264A (en) | 1983-06-14 | 1983-06-14 | Electroless co-ni-p plating bath |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10632183A JPS59232264A (en) | 1983-06-14 | 1983-06-14 | Electroless co-ni-p plating bath |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59232264A JPS59232264A (en) | 1984-12-27 |
JPS622629B2 true JPS622629B2 (en) | 1987-01-21 |
Family
ID=14430669
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10632183A Granted JPS59232264A (en) | 1983-06-14 | 1983-06-14 | Electroless co-ni-p plating bath |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59232264A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3480875A1 (en) | 2013-12-25 | 2019-05-08 | Shin-Etsu Chemical Co., Ltd. | Negative electrode active material for nonaqueous electrolyte secondary batteries and method for producing same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62116782A (en) * | 1985-11-13 | 1987-05-28 | Yokogawa Electric Corp | Electroless plating solution |
-
1983
- 1983-06-14 JP JP10632183A patent/JPS59232264A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3480875A1 (en) | 2013-12-25 | 2019-05-08 | Shin-Etsu Chemical Co., Ltd. | Negative electrode active material for nonaqueous electrolyte secondary batteries and method for producing same |
Also Published As
Publication number | Publication date |
---|---|
JPS59232264A (en) | 1984-12-27 |
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