JPS62262441A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS62262441A JPS62262441A JP10611086A JP10611086A JPS62262441A JP S62262441 A JPS62262441 A JP S62262441A JP 10611086 A JP10611086 A JP 10611086A JP 10611086 A JP10611086 A JP 10611086A JP S62262441 A JPS62262441 A JP S62262441A
- Authority
- JP
- Japan
- Prior art keywords
- film
- nitride film
- substrate
- oxide film
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 150000004767 nitrides Chemical class 0.000 claims abstract description 57
- 238000005530 etching Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 238000011109 contamination Methods 0.000 abstract description 9
- 238000002955 isolation Methods 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 101100008049 Caenorhabditis elegans cut-5 gene Proteins 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 241000293849 Cordylanthus Species 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
Description
【発明の詳細な説明】
Ｃ概要〕
素子間を絶縁分離する領域を作るにあたり、マスクとな
る窒化膜のサイドウオールを異方性エツチングで形成す
る際、Ｓｉ表面を露出しないで行い汚染を防止する。[Detailed Description of the Invention] C Summary] When forming a sidewall of a nitride film that serves as a mask by anisotropic etching to create a region for insulating isolation between elements, the Si surface is not exposed to prevent contamination. .
本発明は半導体装置の製造方法に係わり、特に絶縁分離
領域形成方法に関する。The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of forming an isolation region.
半導体集積回路をよりコンパクトに、より高い集積度に
することは時代の趨勢であり、そのために種々の努力が
なされており、絶縁分離領域を小さくすることも、その
ための重要な要素である。The trend of the times is to make semiconductor integrated circuits more compact and have a higher degree of integration, and various efforts are being made to achieve this, and reducing the size of the isolation region is also an important element for this purpose.
従来の方法は、最もよく知られているＬＯＣＯＳ法では
パッド酸化膜より酸素が拡散するため、バーズビークを
生じ、このためフィールド酸化膜による絶縁骨Ｍ ｆｉ
Ｊ［域が大きくなり、微細化上好ましくなかった。 又
、これを改善する方法の窒化膜枠付きの方法は、バーズ
ビークに対しては改善されているが、窒化膜を異方性エ
ツチングにより全面エツチングする際、Ｓｉ基板表面が
露出するため、この部に汚染とダメージを与え特性上に
好ましからぬ影響を及ぼす欠点を有し、この点の改善が
望まれている。In the conventional method, the most well-known LOCOS method, oxygen diffuses from the pad oxide film, resulting in a bird's beak, which results in the insulating bone M fi by the field oxide film.
J [area became large, which was not preferable in terms of miniaturization. In addition, the method with a nitride film frame to improve this problem has improved the bird's beak, but when the nitride film is etched over the entire surface by anisotropic etching, the surface of the Si substrate is exposed. It has the disadvantage of causing contamination and damage to the material, which has an undesirable effect on the properties, and it is desired to improve this point.
第２図（ａ）〜（ｅ）は従来例におけるフィールド酸化
膜形成工程の断面模式図である。FIGS. 2(a) to 2(e) are schematic cross-sectional views of the field oxide film forming process in the conventional example.
第２図（ａ）は第１の窒化膜上のフォトレジストにパタ
ーニングした状態を示す。FIG. 2(a) shows a state in which the photoresist on the first nitride film is patterned.
この図において、１はＳｉ基板でこの上にパッド用の酸
化膜（Ｓｉｆｔ膜）２を厚さ１００〜７００人形成、更
にこの上にＣＶＤ法で第１の窒化Ｍ３を厚さ約１０００
−１５００人被着形成し、ついでこの上にフォトレジス
ト６を塗布し、リソグラフィ技術によりパターニングす
る。In this figure, reference numeral 1 denotes a Si substrate, on which an oxide film (Sift film) 2 for pads is formed to a thickness of 100 to 700 mm, and on top of this, a first nitride M3 is deposited to a thickness of approximately 1000 mm using the CVD method.
- 1,500 layers are deposited, and then a photoresist 6 is applied thereon and patterned using lithography technology.
第２図（ｂ）は窒化膜および酸化膜までエツチングした
状態を示す。FIG. 2(b) shows a state in which the nitride film and oxide film have been etched.
前の第２図（ａ）において、フォトレジスト９をマスク
にしてＲＩＥ法による異方性エツチングにより窒化膜３
をエツチングする。このときのＲＩＥは、ガスはＣＦａ
＋ Ｏｔ１圧力は０．５Ｔｏｒｒ 、電力は２５０−
で行う。In FIG. 2(a), the nitride film 3 is etched by anisotropic etching using the RIE method using the photoresist 9 as a mask.
etching. In this RIE, the gas is CFa.
+ Ot1 pressure is 0.5 Torr, power is 250-
Do it with
ついで、ウェットエツチングで酸化膜２のエツチングを
行う。Next, the oxide film 2 is etched by wet etching.
第２図（ｃ）は第２の窒化膜を被覆した状態を示す。FIG. 2(c) shows the state covered with the second nitride film.
第２の窒化膜７をＣＶＤ法で厚さ約１０００人、表面全
面に被着形成する。A second nitride film 7 is deposited on the entire surface to a thickness of about 1,000 yen by CVD.
第２図（ｄ）は窒化膜のサイドウオール形成の状態を示
す。FIG. 2(d) shows the state of sidewall formation of the nitride film.
第２の窒化膜７を約１０００人、ＲＩＥ法で異方性エツ
チングすることにより、酸化膜２と第１の窒化膜３のパ
ターンの側面に第２の窒化膜７のサイドウオール７ａを
形成すると同時に、窒化膜３とＳｉ基板１の表面を露出
せしめる。By anisotropically etching the second nitride film 7 by about 1000 people using the RIE method, a side wall 7a of the second nitride film 7 is formed on the side surface of the pattern of the oxide film 2 and the first nitride film 3. At the same time, the surfaces of the nitride film 3 and the Si substrate 1 are exposed.
このときのＲ［の条件は、ガスはＣＦ４ ＋ ０□、圧
力は０．５Ｔｏｒｒ 、電力は２５０−である。The conditions for R[ at this time are that the gas is CF4 + 0□, the pressure is 0.5 Torr, and the electric power is 250-.
第２図（ｅ）はフィールド酸化膜を形成した状態を示す
。FIG. 2(e) shows a state in which a field oxide film has been formed.
酸化膜２ρ上部と側面に形成した枠状の窒化膜３と窒化
膜のサイドウオール７ａをマスクにして熱酸化すること
により、６０００〜８０００人のフィールド酸化膜８を
形成する。A field oxide film 8 of 6,000 to 8,000 layers is formed by thermal oxidation using the frame-shaped nitride film 3 and the nitride film sidewall 7a formed on the top and side surfaces of the oxide film 2ρ as a mask.
この後図示しないが、更に窒化膜とその下の酸化膜を除
去し、フィールド酸化膜間に素子を形成する。Thereafter, although not shown, the nitride film and the oxide film below it are further removed, and elements are formed between the field oxide films.
このとき、フィールド酸化膜形成時のバーズビーク部の
量は、窒化膜のサイドウオール７ａがないときは酸化膜
より酸素が拡散するために０．５μｍ位であったものを
、この方法によるときはサイドウオール７ａの下が直接
Ｓｉ基板１となっているため０．１ μｍ程度に抑える
ことが出来る。At this time, when the field oxide film is formed, the amount of the bird's beak portion is about 0.5 μm when there is no nitride film sidewall 7a because oxygen diffuses from the oxide film; Since the Si substrate 1 is directly under the wall 7a, the thickness can be suppressed to about 0.1 μm.
この方法によると、サイドウオール７ａ形成のため、異
方性エツチングを行うとき、窒化膜で被覆されていない
部分はＳｉ基板１が露出し、そのためＳｉ表面の露出部
に汚染とダメージを与える。このときの汚染はエツチン
グ装置の容器金属によるものが多く、ダメージと共に素
子領域にまで悪影響を及ぼし、ジャンクションリーク不
良等の原因となる欠点がある。According to this method, when anisotropic etching is performed to form the sidewall 7a, the portions of the Si substrate 1 that are not covered with the nitride film are exposed, thereby causing contamination and damage to the exposed portions of the Si surface. Most of the contamination at this time is caused by the container metal of the etching device, which has the drawback of damaging and adversely affecting the element region, causing junction leakage defects and the like.
絶縁分離領域形成方法において、枠付き窒化膜マスク形
成のための異方性エツチング時、Ｓｉ基板表面が露出し
ないようにして、汚染とダメージを防↓する。In the method for forming an insulation isolation region, during anisotropic etching to form a framed nitride film mask, the surface of the Si substrate is not exposed to prevent contamination and damage.
（問題点を解決するための手段〕
上記問題点の解決は、Ｓｉ基板の表面に、酸化膜を形成
し、この上に第１の窒化膜のパターンを形成する工程と
、前記第１の窒化膜のパターンの段差部下端近傍に切れ
目のある、金属膜による被膜を形成する工程と、前記酸
化膜をエツチングして、切れ目の部分に溝を形成する工
程と、前記金属膜を除去後、Ｓｉ基板全面に第２の窒化
膜を被覆し、続いて異方性エツチングを行い、溝の上お
よび第１の窒化膜の側面に第２の゛窒化膜によるサイド
ウオールを形成する工程と、続いて、前記第１の窒化膜
とサイドウオールをマスクとして、フィールド酸化膜を
形成する工程とを含んでなる本発明による半導体装置の
製造方法により達成される。(Means for Solving the Problems) The above problems can be solved by forming an oxide film on the surface of a Si substrate, forming a first nitride film pattern thereon, and A step of forming a metal film coating with a cut near the lower end of the step of the film pattern, a step of etching the oxide film to form a groove at the cut portion, and after removing the metal film, A step of coating the entire surface of the substrate with a second nitride film, followed by anisotropic etching to form a sidewall of a second nitride film over the groove and on the side surfaces of the first nitride film; This is achieved by the method of manufacturing a semiconductor device according to the present invention, which includes the step of forming a field oxide film using the first nitride film and the sidewall as a mask.
特に、前記金属膜をアルミニウム、モリブデン又はチタ
ンとすることにより本発明は容易に実施することが出来
る。In particular, the present invention can be easily implemented by using aluminum, molybdenum, or titanium as the metal film.
パッド用酸化膜上の窒化膜パターンの段差部にカバレー
ジ性のよくない金属被膜の切れ目を形成し、この部の酸
化膜に溝を作り、ついでこの溝を埋めるが如き窒化膜を
全面被覆して、異方性エツチングを行うことによりサイ
ドウオールを形成するもので、異方性エツチング時Ｓｉ
基板面が露出しないので汚染もダメージもな（、且つバ
ーズビークも極めて小さいフィールド酸化膜を形成する
ことが出来る。A cut in the metal film with poor coverage is formed at the stepped part of the nitride film pattern on the oxide film for the pad, a groove is made in the oxide film in this part, and then the entire surface is covered with a nitride film that fills this groove. , sidewalls are formed by anisotropic etching, and during anisotropic etching, Si
Since the substrate surface is not exposed, a field oxide film can be formed without contamination or damage (and with extremely small bird's beaks).
第１図（ａ）〜（ｆ）は本発明におけるフィールド酸化
膜形成工程の断面模式図である。FIGS. 1(a) to 1(f) are schematic cross-sectional views of the field oxide film forming step in the present invention.
第１図において、第２図と同じ名称のものは同じ符号で
示す。In FIG. 1, parts with the same names as in FIG. 2 are indicated by the same reference numerals.
第１図（ａ）は第１の窒化膜をパターニングした状態を
示す。FIG. 1(a) shows a state in which the first nitride film has been patterned.
この図において、１はＳｔ基板でこの上にパッド用の酸
化膜（ＳｉＯ□膜）２を厚さ１００〜７００人形成、更
にこの上にＣＶＤ法で第１の窒化膜３を厚さ約１０００
大破着形成し、この窒化膜３にリソグラフィ技術により
パターニングする。In this figure, reference numeral 1 denotes an St substrate, on which an oxide film (SiO□ film) 2 for pads is formed to a thickness of 100 to 700 mm, and on top of this a first nitride film 3 is formed by CVD to a thickness of approximately 1000 mm.
Large cracks are formed, and this nitride film 3 is patterned using lithography technology.
第１図（ｂ）はＡＩ膜を形成した状態を示す。FIG. 1(b) shows a state in which an AI film is formed.
この図において、Ａｌ膜４をスパッタリング法で０．３
〜１．５μＩ被着するが、このとき特にＡ１膜４のカバ
レージ性のよくない方法、例えばＳｉｉ板１を加熱しな
い方法あるいはターゲットとＳｉ基ｔ７ｉ１との距離を
調整する等して、窒化膜の段着部下端近傍でＡＩ膜４に
切れ目５を形成する。In this figure, an Al film 4 of 0.3
~1.5 μI is deposited, but at this time, the nitride film is deposited using methods that do not provide good coverage of the A1 film 4, such as not heating the Sii plate 1 or adjusting the distance between the target and the Si substrate t7i1. A cut 5 is formed in the AI film 4 near the lower end of the step.
第１図（ｃ）はＡＩ膜を除去した状態を示す。FIG. 1(c) shows the state with the AI film removed.
この図において、）ＩＦで酸化膜２の表出部をエツチン
グして溝幅約１００ 〜７００人の溝６を形成する。つ
いで、ＡＩ膜をｆｌＮ（ｈ等でボイル除去する。In this figure, the exposed portion of the oxide film 2 is etched using )IF to form a groove 6 having a width of approximately 100 to 700 mm. Then, the AI film is removed by boiling with flN (h, etc.).
第１図（ｄ）は第２の窒化膜を被覆した状態を示す。FIG. 1(d) shows the state covered with the second nitride film.
この図において、減圧ＣＶＤ法で第２の窒化膜７を厚さ
約１０００大破着する。この窒化膜ｑはカバレージ性が
良好で、段差部における窪みは厚さ約１０００人被覆す
るとな（なる。In this figure, the second nitride film 7 is deposited to a thickness of approximately 1,000 yen using the low pressure CVD method. This nitride film q has good coverage, and will cover the depressions at the stepped portions to a thickness of approximately 1000 mm.
第１図（ｅ）は異方性エツチングを行いサイドウオール
を形成した状態を示す。FIG. 1(e) shows a sidewall formed by anisotropic etching.
ＲＩＨ法による異方性エツチングで窒化膜７を約１００
０人の厚さエツチングして酸化膜２の上の窒化膜７を除
去し、且つ窒化膜のサイドウオール７ａを形成する。こ
のＲＩＨの条件としては、ガスはＣＦ４＋Ｏｚ、圧力は
Ｑ、５Ｔｏｒｒ ％電力は２５０讐で行う。The nitride film 7 is etched approximately 100% by anisotropic etching using the RIH method.
The nitride film 7 on the oxide film 2 is removed by etching to a thickness of 0.0 mm, and a nitride film sidewall 7a is formed. The RIH conditions are as follows: gas is CF4+Oz, pressure is Q, 5 Torr%, and power is 250%.
第１図（ｆ）はフィールド酸化膜を形成した状態を示す
。FIG. 1(f) shows a state in which a field oxide film has been formed.
この図において、窒化膜をマスクとして熱酸化してフィ
ールド酸化膜８を厚さ６０００〜８０００人形成する。In this figure, a field oxide film 8 is formed to a thickness of 6,000 to 8,000 layers by thermal oxidation using the nitride film as a mask.
更に、図示しないが、窒化膜３と窒化膜のサイドウオー
ル７ａを除去、酸化膜２を除去して、素子形成工程に入
る。Further, although not shown, the nitride film 3 and the nitride film sidewall 7a are removed, the oxide film 2 is removed, and the device forming process is started.
この方法によるときは、ＲＩＩＥ法で異方性エツチング
を行って窒化膜のサイドウオールを形成するときＳｉ基
板面が全く表出しないので、Ｓｉ表面がダメージを受け
たり、金属等に汚染されることがなく、ジャンクション
リーク等の特性不良は生じない。When this method is used, the Si substrate surface is not exposed at all when the nitride film sidewall is formed by anisotropic etching using the RIIE method, so the Si surface may be damaged or contaminated with metals, etc. There is no problem with characteristics such as junction leaks.
また、フィールド酸化膜形成時、Ｓｉ表面の露出した部
分がないのでバーズビークも少ない。Furthermore, since there is no exposed portion of the Si surface during the formation of the field oxide film, there are fewer bird's beaks.
ここでは窒化膜パターン上に被覆する金属膜としてＡＩ
を用いるものについて述べたが、この金属膜はＡＩの替
わりにＭｏあるいはＴｉを用いても同様な結果を得るこ
とが出来る。Here, AI is used as the metal film coated on the nitride film pattern.
Although we have described the metal film using Mo or Ti instead of AI, similar results can be obtained.
フィールド酸化膜形成時マスクとして必要な窒化膜のサ
イドウオールを作るための異方性エツチング時、Ｓｔ基
板面が露出しないので汚染もダメージもなく、且つバー
ズビークも極めて小さい絶縁分離領域を形成することが
出来る。During anisotropic etching to create a nitride film sidewall, which is required as a mask during field oxide film formation, the St substrate surface is not exposed, so there is no contamination or damage, and an insulating isolation region with extremely small bird's beaks can be formed. I can do it.
第１図（ａ）〜（ｆ）は本発明におけるフィールド酸化
膜形成工程の断面模式図、
第２図（ａ）〜（ｅ）は従来例におけるフィールド酸化
膜形成工程の断面模式図である。
図において、
１はＳｉ基板、
２は酸化膜、
３は第１の窒化膜、
４は金属膜（ＡＩ膜）、
５は切れ目、
６は溝、
７は第２の窒化膜、
７ａはサイドウオール、
８はフィールド酸化膜FIGS. 1(a) to 1(f) are schematic cross-sectional views of the field oxide film forming step in the present invention, and FIGS. 2(a) to (e) are cross-sectional schematic views of the field oxide film forming step in the conventional example. In the figure, 1 is a Si substrate, 2 is an oxide film, 3 is a first nitride film, 4 is a metal film (AI film), 5 is a cut, 6 is a groove, 7 is a second nitride film, 7a is a side wall , 8 is the field oxide film
Claims (1)
、この上に第１の窒化膜（３）のパターンを形成する工
程と、 前記第１の窒化膜（３）のパターンの段差部下端近傍に
切れ目（５）のある、金属膜（４）による被膜を形成す
る工程と、 前記酸化膜（２）をエッチングして、切れ目（５）の部
分に溝（６）を形成する工程と、前記金属膜（４）を除
去後、Ｓｉ基板（１）全面に第２の窒化膜（７）を被覆
し、続いて異方性エッチングを行い、溝（６）の上およ
び第１の窒化膜（３）の側面に第２の窒化膜（７）によ
るサイドウォール（７ａ）を形成する工程と、 続いて、前記第１の窒化膜（３）とサイドウォール（７
ａ）をマスクとして、フィールド酸化膜（８）を形成す
る工程とを、 含んでなることを特徴とする半導体装置の製造方法。 〔２〕前記金属膜（４）がアルミニウム、モリブデン又
はチタンであることを特徴とする特許請求の範囲第１項
記載の半導体装置の製造方法。[Claims] [1] A step of forming an oxide film (2) on the surface of the Si substrate (1) and forming a pattern of a first nitride film (3) thereon; A step of forming a film of metal film (4) having a cut (5) near the lower end of the step of the pattern of the nitride film (3), and etching the oxide film (2) to remove the cut (5). After removing the metal film (4), the entire surface of the Si substrate (1) is coated with a second nitride film (7), and then anisotropic etching is performed to form the grooves. forming sidewalls (7a) of a second nitride film (7) on top of (6) and on the side surfaces of the first nitride film (3); side wall (7
A method for manufacturing a semiconductor device, comprising the step of: a) forming a field oxide film (8) using the mask as a mask. [2] The method for manufacturing a semiconductor device according to claim 1, wherein the metal film (4) is made of aluminum, molybdenum, or titanium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10611086A JPS62262441A (en) | 1986-05-09 | 1986-05-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10611086A JPS62262441A (en) | 1986-05-09 | 1986-05-09 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62262441A true JPS62262441A (en) | 1987-11-14 |
Family
ID=14425336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10611086A Pending JPS62262441A (en) | 1986-05-09 | 1986-05-09 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62262441A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01281748A (en) * | 1988-05-07 | 1989-11-13 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1986
- 1986-05-09 JP JP10611086A patent/JPS62262441A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01281748A (en) * | 1988-05-07 | 1989-11-13 | Fujitsu Ltd | Manufacture of semiconductor device |
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