KR940009578B1 - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
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- KR940009578B1 KR940009578B1 KR1019920000918A KR920000918A KR940009578B1 KR 940009578 B1 KR940009578 B1 KR 940009578B1 KR 1019920000918 A KR1019920000918 A KR 1019920000918A KR 920000918 A KR920000918 A KR 920000918A KR 940009578 B1 KR940009578 B1 KR 940009578B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Abstract
Description
제 1 도는 종래의 소자분리방법에 관한 공정도.1 is a process chart related to a conventional device isolation method.
제 2 도는 본 발명의 소자분리방법에 관한 공정도이다.2 is a process chart related to the device isolation method of the present invention.
본 발명은 반도체장치의 소자분리방법에 관한 것으로, 특히 매몰형 필드산화막과 활성영역 사이의 경계면 상태를 개선시켜 소자의 신뢰도를 향상시킨 반도체 장치의 소자분리방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device isolation method of a semiconductor device, and more particularly, to a device isolation method of a semiconductor device having improved device reliability by improving an interface state between an buried field oxide film and an active region.
반도체 장치가 고집적화됨에 따라 소자의 크기가 점차 미세화되게 되어 현재소자간의 거리가 0.5㎛ 이하로 감소하게 되었다. 따라서 제한된 면적하에서 공정마진을 넓혀 소자의 집적도 및 신뢰도를 향상시키고자 하는 노력이 활발히 진행되어 왔다.As semiconductor devices have been highly integrated, the size of devices has been gradually miniaturized, and the distance between current devices has been reduced to 0.5 μm or less. Therefore, efforts have been actively made to improve the integration and reliability of devices by widening the process margin under a limited area.
현재 반도체 소자분리 기술로 가장 잘 알려진 것은, 소위 국부산화라고 하는 LOCOS 또는 이 기술의 개량기술 들이며 그 예로는 다음과 같은 것들이 있다.Currently, the best known semiconductor device isolation technology is LOCOS, or localized technology, which is called localization. Examples include:
초기 산화막과 질화막을 순차로 형성하고 산화시킬 부분을 제거한 후 선택산화하여 필드산화막을 형성하는 방법을 제시한 일본 공개공보 제84-19350호 및 한국 공개공보 제-10947호와, 실리콘산화막과 다결정실리콘층과 질화실리콘층을 순차 형성한 후 활성영역을 제외한 나머지 부분만을 남기고 그후 측벽스페이서를 형성한 산화방지막을 이용하여 선택산화하는 방법을 제시한 The IEEE Electron Device Society 와 The Japan Society of Applied Physics에서 주관한 1990 Symposium on VLSI Technology에서 R.Haken이 발표한 "Submicron Structures for ULSI"와, 질화막과 산화막 스페이서를 이용한 매몰형 필드산화막을 형성하는 기술을 제시한 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL.35 No.7 July, 1988 P.P.893~898등이 있다.Japanese Patent Application Laid-Open Publication No. 84-19350 and Korean Patent Application Publication No.-10947 which show a method of forming an initial oxide film and a nitride film sequentially, removing a portion to be oxidized, and then selectively oxidizing a field oxide film, and a silicon oxide film and polycrystalline silicon. The IEEE Electron Device Society and The Japan Society of Applied Physics have presented a method of forming a layer and a silicon nitride layer sequentially and then selectively oxidizing it using an antioxidant film forming a sidewall spacer, leaving only the remaining portions except the active region. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL.35 No. 7, which presented "Submicron Structures for ULSI" presented by R. Haken at 1990 Symposium on VLSI Technology, and a buried field oxide film using nitride film and oxide spacer. July, 1988 PP893-898.
이러한 종래의 매몰형 LOCO기술에서는 필드산화막과 활성영역간의 경계면에 첨예부가 형성되게 되어 상부에 형성되는 게이트산화막의 막질을 저하시키는 문제점이 있었다. 이하에 첨부한 도면 제 1 도를 참조로 하여 설명하겠다.In the conventional buried LOCO technology, a sharp portion is formed at the interface between the field oxide film and the active region, thereby degrading the film quality of the gate oxide film formed thereon. It will be described with reference to Figure 1 attached to the following.
제 1 도는 종래의 소자분리방법에 관한 공정도이다.1 is a process chart related to a conventional device isolation method.
제 1a 도에 도시된 바와 같이 반도체 기판(1) 상에 옥시나이트 라이드막(3) 및 질화막(5)을 순차적으로 형성한 다음 포토레지스트 패턴을 이용하여 비활성영역에 개구부(A)를 형성한다. 이 개구부 형성시 실리콘기판 일부까지 식각하여 리세스(recess)를 형성할 수도 있다.As shown in FIG. 1A, an oxynitride film 3 and a nitride film 5 are sequentially formed on the semiconductor substrate 1, and then an opening A is formed in an inactive region using a photoresist pattern. When the opening is formed, a portion of the silicon substrate may be etched to form a recess.
그후 제 1b 도에 도시된 바와같이, 900~1000℃ 정도의 고온에서 습식산화법으로 산화시켜 개구부내에 5000Å 정도의 필드산화막을 성장시킨다.Thereafter, as shown in FIG. 1B, a field oxide film of about 5000 kPa is grown in the opening by oxidation by wet oxidation at a high temperature of about 900 to 1000 ° C.
그후 제 1c 도에 도시된 바와 같이, 상기 질화막(5) 및 옥시나이트라이드막(3)을 습식식각법으로 차례로 제거한 후 희생산화막(9)을 500Å 정도 성장시킨다. 이 희생산화막(9)은, 상기 실리콘기판(1)과 질화막(5)이 서로 열팽창게수가 다르기 때문에 실리콘기판 표면부에 결함이 발생하게 되므로 이 표면을 산화시켜 줌으로써 막질을 개선시키고자 형성한 것이다.Thereafter, as shown in FIG. 1C, the nitride film 5 and the oxynitride film 3 are sequentially removed by wet etching, and then the sacrificial oxide film 9 is grown to about 500 kPa. The sacrificial oxide film 9 is formed to improve the film quality by oxidizing the surface because defects are generated in the surface of the silicon substrate because the number of thermal expansions of the silicon substrate 1 and the nitride film 5 are different from each other. .
그후 제 1d 도에 도시된 바와 같이, 상기의 희생산화막(9)을 습식식각하여 제거함으로써 소자분리를 완성한다.After that, as shown in FIG. 1D, the sacrificial oxide film 9 is removed by wet etching to complete device isolation.
그런데 이 희생산화막 에칭시 통상적으로 과다에칭을 하게 되며 제 1d 도에 도시된 바와같이 필드산화막(7)과 활성영역간의 경계면에 첨예부(11)가 형성하게 된다. 이 첨예부(11)는 이후 게이트 산화막 성장시 산화막의 두께가 얇아지며, 전계가 집중되기 때문에 게이트 산화막의 블랙다운이 쉽게 일어나게 되어 소자의 신뢰도를 저감시킨다.However, during etching of the sacrificial oxide film, overetching is usually performed, and as shown in FIG. 1D, the sharp portion 11 is formed on the interface between the field oxide film 7 and the active region. The sharp portion 11 has a thinner oxide film as the gate oxide film grows later, and because the electric field is concentrated, blackdown of the gate oxide film easily occurs, thereby reducing the reliability of the device.
따라서 본 발명은 상기한 바와 같은 문제점을 해결하기 위하여, 매몰형 필드산화막과 활성영역 사이의 경계면 상태를 개선시켜 소자의 신뢰도를 향상시킨 반도체 장치의 소자분리방법에 관한 것이다.Accordingly, the present invention relates to a device isolation method of a semiconductor device which improves the reliability of the device by improving the interface state between the buried field oxide film and the active region in order to solve the above problems.
상기한 바와 같은 목적을 달성하기 위하여 본 발명은, 반도체 기판상에 층간절연막 및 제 2 절연막을 순차적으로 형성한 후, 사진식각법으로 비활성영역에 개구부를 형성하는 단계와, 그 개구부내에 필드산화막을 성장시키는 단계와, 상기 제 2 절연막 및 층간절연막을 차례로 제거하는 단계와, 선택적으로 실리콘기판을 소정깊이로 식각하는 단계로 구성되는 반도체장치의 소자분리방법을 제공한다.In order to achieve the above object, the present invention is to sequentially form an interlayer insulating film and a second insulating film on a semiconductor substrate, and then to form an opening in an inactive region by photolithography, and to form a field oxide film in the opening. And a step of removing the second insulating film and the interlayer insulating film in order, and optionally etching the silicon substrate to a predetermined depth.
이하 본 발명의 바람직한 실시예를 도면을 참조하여 설명하겠다.Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
제 2 도는 본 발명의 소자분리방법에 관한 공정도이다. 제 2a 도에 도시된 바와같이 반도체 기판(21) 상에 옥시나이트라이드막(23) 및 질화막(25)을 순차적으로 형성한 후, 포토레지스트 패턴을 이용하여 비활성영역에 개구부(A)를 형성한다. 이 개구부 형성시 실리콘기판 일부까지 식각하여 리세스(recess)를 형성할 수도 있다. 또한 이때 상기의 옥시나이트라이드막(23)은 N2O, NH3및 SiH2Cl2가스를 600~800℃, 100~500m Torr 조건에서 열분해시켜서 형성시키며, 두께는 약 100~500Å 정도가 되도록 형성한다.2 is a process chart related to the device isolation method of the present invention. As shown in FIG. 2A, the oxynitride film 23 and the nitride film 25 are sequentially formed on the semiconductor substrate 21, and then an opening A is formed in the inactive region using a photoresist pattern. . When the opening is formed, a portion of the silicon substrate may be etched to form a recess. In this case, the oxynitride film 23 is formed by thermally decomposing N 2 O, NH 3 and SiH 2 Cl 2 gas at 600 to 800 ° C. and 100 to 500 m Torr, and the thickness is about 100 to 500 kPa. Form.
그후 제 2b 도에 도시된 바와 같이, 900~1000℃ 정도의 고온에서 습식산화법으로 산화시켜 개구부내에 5000Å 정도의 필드산화막(27)을 성장시킨다.Thereafter, as shown in FIG. 2B, a field oxide film 27 of about 5000 kPa is grown in the opening by oxidizing by wet oxidation at a high temperature of about 900 to 1000 ° C.
그후 제 2c 도에 도시된 바와 같이, 상기 질화막(25) 및 옥시나이트라이드막(23)을 습식식각법으로 차례로 제거한다.Thereafter, as shown in FIG. 2C, the nitride film 25 and the oxynitride film 23 are sequentially removed by wet etching.
그후 제 2d 도에 도시된 바와 같이, 습식식각법으로 HNO3, CH3COOH, 및 HF의 조성비를 조절하여 에칭비율을 충분하게 낮추어서, 실리콘기판을 약 200~500Å 정도 식각시켜 소자분리를 완성한다. 이 습식식각공정에 의하여 상기의 필드산화막 형성시 고온 열처리에 의한, 실리콘기판 표면부에 발생된 결함을 제거하기 위하여 상기의 실리콘기판을 습식식각하여 제거함으로써 필드산화막(27)은 전혀 식각되지 않고 실리콘기판만 식각되게 되므로, 손상되지 않은 실리콘표면이 노출됨과 동시에 종래에 발생하였던 첨예부가 발생하지 않게 된다. 따라서 종래의 기판 표면의 결함 보상효과를 얻을 수 있음과 동시에 소자의 신뢰도도 저하되지 않게 된다.After that, as shown in FIG. 2d, the etching rate is sufficiently reduced by adjusting the composition ratio of HNO 3 , CH 3 COOH, and HF by wet etching, and the silicon substrate is etched by about 200 to 500Å to complete device isolation. . By the wet etching process, the field oxide film 27 is not etched at all by wet etching the silicon substrate to remove defects generated on the surface of the silicon substrate by the high temperature heat treatment during the formation of the field oxide film. Since only the substrate is etched, the undamaged silicon surface is exposed and at the same time, the sharpness that has occurred conventionally does not occur. Therefore, the defect compensation effect on the surface of the conventional substrate can be obtained and the reliability of the device is not lowered.
따라서 본 발명에 의하면 매몰형 필드산화막과 활성영역 사이의 경계면 상태를 개선시켜 소자의 신뢰도를 향상시킬 수 있게 된다.Therefore, according to the present invention, it is possible to improve the reliability of the device by improving the interface state between the buried field oxide film and the active region.
Claims (10)
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| KR1019920000918A KR940009578B1 (en) | 1992-01-23 | 1992-01-23 | Semiconductor device and manufacturing method thereof |
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| KR1019920000918A KR940009578B1 (en) | 1992-01-23 | 1992-01-23 | Semiconductor device and manufacturing method thereof |
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| KR930017146A KR930017146A (en) | 1993-08-30 |
| KR940009578B1 true KR940009578B1 (en) | 1994-10-15 |
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