JPS6225820A - Semicondcutor converter - Google Patents

Semicondcutor converter

Info

Publication number
JPS6225820A
JPS6225820A JP16190785A JP16190785A JPS6225820A JP S6225820 A JPS6225820 A JP S6225820A JP 16190785 A JP16190785 A JP 16190785A JP 16190785 A JP16190785 A JP 16190785A JP S6225820 A JPS6225820 A JP S6225820A
Authority
JP
Japan
Prior art keywords
fuse
voltage detection
semiconductor
contact
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16190785A
Other languages
Japanese (ja)
Inventor
矢吹 正明
松崎 武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Engineering Co Ltd
Hitachi Ltd
Original Assignee
Hitachi Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Engineering Co Ltd
Priority to JP16190785A priority Critical patent/JPS6225820A/en
Publication of JPS6225820A publication Critical patent/JPS6225820A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、半導体変換装置に係わり、特に、半導体素子
の保護に好敵なヒユーズ溶断検出装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a semiconductor conversion device, and particularly to a fuse blowout detection device that is suitable for protecting semiconductor elements.

〔発明の背景〕[Background of the invention]

従来の半導体変換装置のヒユーズ溶断検出は、第3図に
示すように半導体素子と直列に設置されたトリがヒユー
ズのトリが機構からヒユーズ溶断それを外部に接点信号
として与える方式が知られている。このため、溶断した
ヒユーズ数が監視できない他、検出回路がa接点で構成
されているため、トリが接点の故障又は、接触抵抗が増
加した場合の故障は1発見できにくい。7は制御電源、
8はリレー、9はサイリスタブリッジ回路である。
As shown in Figure 3, conventional fuse blowing detection in semiconductor converter devices is known in which a bird installed in series with the semiconductor element detects the fuse blowing from a mechanism and sends the signal to the outside as a contact signal. . For this reason, it is not possible to monitor the number of blown fuses, and since the detection circuit is composed of a-contacts, it is difficult to detect a failure of the contact or a failure when the contact resistance increases. 7 is a control power supply,
8 is a relay, and 9 is a thyristor bridge circuit.

(文献 電気書院[サイリスタ応用技術入門」vol、
40) 〔発明の目的〕 本発明の目的は、半導体変換装置の保護ヒユーズが正常
状態を維持しているかどうかを監視しながら、ヒユーズ
溶断時に溶断したヒユーズ数の表示、又は、信号を与え
ることにある。
(Reference Denkishoin [Introduction to Thyristor Application Technology] vol.
40) [Object of the Invention] The object of the present invention is to provide a display or a signal indicating the number of fuses blown when a fuse blows, while monitoring whether the protective fuses of a semiconductor conversion device are maintained in a normal state. be.

(発明の概要〕 本発明の要点は、複数の半導体素子から構成される装置 ヒユーズ溶断トリが接点のb接点と直列に限流抵抗を介
して電圧検出リレーを設けることにより、ヒユーズの正
常状態、及び、ヒユーズの溶断数のろにある。
(Summary of the Invention) The main point of the present invention is that a device fuse breaker composed of a plurality of semiconductor elements is provided with a voltage detection relay in series with the B contact of the contact via a current limiting resistor, thereby detecting the normal state of the fuse. And the number of fuses blown is behind.

〔発明の実施例〕[Embodiments of the invention]

以下1本発明の実施例を図面を用いて説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図に一実施例の主な回路構成を示す。FIG. 1 shows the main circuit configuration of one embodiment.

第1図は、ヒユーズ溶断トリが接点1を備え、サイリス
タ素子11と直列に接続された高速限流ヒユーズ10か
ら構成されるサイリスタブリッジ回路9を、並列に接続
した半導体変換装置12、及び、このうち−サイリスタ
ブリツジ回路9のヒユーズ溶断トリが接点を各々直列に
接続し、制限電流抵抗2を介した回路を各々ブリッジ毎
に並列に接続して、電圧検出リレー3と4に接続したも
のである。
FIG. 1 shows a semiconductor conversion device 12 in which a thyristor bridge circuit 9 is connected in parallel with a thyristor bridge circuit 9 comprising a high-speed current-limiting fuse 10 connected in series with a thyristor element 11, and a semiconductor converter 12 in which the fuse blower has a contact 1. Of these, the contacts of the fuse breaker of the thyristor bridge circuit 9 are connected in series, and the circuit via the limiting current resistor 2 is connected in parallel for each bridge, and is connected to the voltage detection relays 3 and 4. be.

電圧検出リレー3と4は、電圧検出リレーの内部抵抗が
同種の電圧検出リレーで、電圧検出レベルを変えている
Voltage detection relays 3 and 4 are voltage detection relays that have the same internal resistance, but have different voltage detection levels.

全高速限流ヒユーズ10が正常な時、電圧検出リレー3
と4にかかる電圧は全制限電流抵抗2がトリが接点lを
介して並列接続となるため、最大電圧となるから、この
時の電圧値に動作するように電圧検出リレー3の電圧検
出レベルを設定する。
When full high speed current limiting fuse 10 is normal, voltage detection relay 3
Since the voltage applied to and 4 becomes the maximum voltage because all limiting current resistors 2 and 3 are connected in parallel through contact 1, the voltage detection level of voltage detection relay 3 is adjusted to operate at the voltage value at this time. Set.

又、並列半導体変換装置中のある一並列回路のヒユーズ
が溶断した時、溶断した回路の制限電流抵抗2がヒユー
ズ溶断時動作するトリガ接点で切り離され、電圧検出リ
レー3と4にかかる電圧が下がることから、この時の電
圧値に動作する様に電圧検出リレー4の電圧検出レベル
を設定する。
Also, when a fuse in one parallel circuit in the parallel semiconductor converter blows out, the limiting current resistor 2 of the blown circuit is disconnected by the trigger contact that operates when the fuse blows, and the voltage applied to the voltage detection relays 3 and 4 decreases. Therefore, the voltage detection level of the voltage detection relay 4 is set to operate at the voltage value at this time.

以上により、高速限流ヒユーズが正常な時、電圧検出リ
レー3が動作し、並列半導体変換装置中のある一並列回
路のヒユーズが溶断した時、電圧検出リレー4が動作す
るため、ヒユーズが正常状態かどうか監視でき、又、ヒ
ユーズの溶断も検出できる。更に、検出回路をb地点で
構成していることにより、トリガ接点の故障、又は、接
触抵抗が増加した場合の故障も確実に発見でき保護装置
の信頼性の向上が図れる。
As described above, when the high-speed current limiting fuse is normal, the voltage detection relay 3 operates, and when the fuse of one parallel circuit in the parallel semiconductor converter is blown, the voltage detection relay 4 operates, so that the fuse is in the normal state. It is also possible to monitor whether the fuse is blown or not. Furthermore, by configuring the detection circuit at point b, it is possible to reliably detect failures in the trigger contact or failures when contact resistance increases, thereby improving the reliability of the protection device.

次に、第2図に第1図の検出回路に電圧検出リレー5,
6と追加した検出回路を示す。電圧検出リレー5の電圧
検出レベルは、n並列半導体変換装置のうち、任意の二
並列群ヒユーズ溶断した時動作するように設定し、三並
列群ヒユーズ溶断した時は、電圧検出リレー6が動作す
るように設定する。
Next, in FIG. 2, the voltage detection relay 5 is added to the detection circuit of FIG.
6 shows the added detection circuit. The voltage detection level of the voltage detection relay 5 is set to operate when any two parallel group fuses among the n parallel semiconductor converters are blown, and when the three parallel group fuses are blown, the voltage detection relay 6 is operated. Set it as follows.

このようにして、電圧検出リレーを増加していくと(n
−1)群までヒユーズ溶断検出ができる。
In this way, by increasing the number of voltage detection relays (n
-1) Fuse blowout can be detected up to the group.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、半導体変換装置の保護ヒユーズが正常
状態を保持しているかどうかを監視しながら、ヒユーズ
溶断時に溶断したヒユーズをもつ回路数の表示、又は、
信号を与えることが可能で 1あり、並列回路次長を設
ける場合は、特に、有効である。
According to the present invention, while monitoring whether the protective fuse of a semiconductor conversion device maintains a normal state, displaying the number of circuits having a blown fuse when the fuse blows, or
This is particularly effective when a parallel circuit is provided.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の一実施例の回路図、第2図は、n並
列半導体変換装置中玉並列ブリッジ回路のヒユーズ溶断
を検出する類似例図、第3図は。 従来のヒユーズ溶断検出回路図である。 1・・・トリガ接点又はスイッチ、2・・・制限電流抵
抗。 3〜6・・・電圧検出レベルの異なる電圧検出リレー、
7・・・制御電源、8・・・リレー、9・・・サイリス
タブリッジ回路、10・・・高速限流ヒユーズ、11・
・・サイリスタ素子、12・・・半導体変換装置。
FIG. 1 is a circuit diagram of an embodiment of the present invention, FIG. 2 is a diagram of a similar example for detecting fuse blowing in a parallel bridge circuit in an n-parallel semiconductor converter, and FIG. 3 is a diagram of a similar example. It is a conventional fuse blowout detection circuit diagram. 1...Trigger contact or switch, 2...Limiting current resistance. 3 to 6... Voltage detection relays with different voltage detection levels,
7... Control power supply, 8... Relay, 9... Thyristor bridge circuit, 10... High speed current limiting fuse, 11...
...Thyristor element, 12...Semiconductor conversion device.

Claims (1)

【特許請求の範囲】 1、半導体素子とこれに直列に接続されたヒューズ溶断
トリが接点を備えた高速ヒューズから構成される半導体
変換装置において、 前記ヒューズ溶断トリが接点に直列に複数の電圧検出リ
レーを設け、ヒューズの正常状態の監視とヒューズ溶断
数の表示、又は、信号を与えることを特徴とする半導体
変換装置。
[Scope of Claims] 1. A semiconductor conversion device comprising a semiconductor element and a high-speed fuse with a fuse-blower connected in series to the semiconductor element and a contact, wherein the fuse-blower is connected in series to the contact and detects a plurality of voltages. 1. A semiconductor converter device comprising a relay and monitoring the normal state of a fuse and displaying the number of blown fuses or giving a signal.
JP16190785A 1985-07-24 1985-07-24 Semicondcutor converter Pending JPS6225820A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16190785A JPS6225820A (en) 1985-07-24 1985-07-24 Semicondcutor converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16190785A JPS6225820A (en) 1985-07-24 1985-07-24 Semicondcutor converter

Publications (1)

Publication Number Publication Date
JPS6225820A true JPS6225820A (en) 1987-02-03

Family

ID=15744284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16190785A Pending JPS6225820A (en) 1985-07-24 1985-07-24 Semicondcutor converter

Country Status (1)

Country Link
JP (1) JPS6225820A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431138U (en) * 1987-08-18 1989-02-27
JPH09242067A (en) * 1996-03-11 1997-09-16 ▲高▼松建設株式会社 Building method for cast-in-place concrete pile

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431138U (en) * 1987-08-18 1989-02-27
JPH09242067A (en) * 1996-03-11 1997-09-16 ▲高▼松建設株式会社 Building method for cast-in-place concrete pile

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