JPS62256792A - 化合物半導体単結晶の気相成長方法 - Google Patents

化合物半導体単結晶の気相成長方法

Info

Publication number
JPS62256792A
JPS62256792A JP10298486A JP10298486A JPS62256792A JP S62256792 A JPS62256792 A JP S62256792A JP 10298486 A JP10298486 A JP 10298486A JP 10298486 A JP10298486 A JP 10298486A JP S62256792 A JPS62256792 A JP S62256792A
Authority
JP
Japan
Prior art keywords
crystal
chamber
seed crystal
single crystal
seed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10298486A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0371399B2 (enExample
Inventor
Tomoji Yamagami
山上　智司
Yoshitaka Tomomura
好隆 友村
Masahiko Kitagawa
雅彦 北川
Shigeo Nakajima
中島　重夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP10298486A priority Critical patent/JPS62256792A/ja
Publication of JPS62256792A publication Critical patent/JPS62256792A/ja
Publication of JPH0371399B2 publication Critical patent/JPH0371399B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP10298486A 1986-04-30 1986-04-30 化合物半導体単結晶の気相成長方法 Granted JPS62256792A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10298486A JPS62256792A (ja) 1986-04-30 1986-04-30 化合物半導体単結晶の気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10298486A JPS62256792A (ja) 1986-04-30 1986-04-30 化合物半導体単結晶の気相成長方法

Publications (2)

Publication Number Publication Date
JPS62256792A true JPS62256792A (ja) 1987-11-09
JPH0371399B2 JPH0371399B2 (enExample) 1991-11-13

Family

ID=14341980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10298486A Granted JPS62256792A (ja) 1986-04-30 1986-04-30 化合物半導体単結晶の気相成長方法

Country Status (1)

Country Link
JP (1) JPS62256792A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03194922A (ja) * 1989-12-22 1991-08-26 Stanley Electric Co Ltd ２―６族化合物半導体結晶成長装置
US5725659A (en) * 1994-10-03 1998-03-10 Sepehry-Fard; Fareed Solid phase epitaxy reactor, the most cost effective GaAs epitaxial growth technology

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101311401B1 (ko) * 2012-10-31 2013-09-25 장희선 철근 인양장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129694A (enExample) * 1973-04-04 1974-12-12
JPS6143275U (ja) * 1984-08-17 1986-03-20 三洋電機株式会社 結晶成長装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129694A (enExample) * 1973-04-04 1974-12-12
JPS6143275U (ja) * 1984-08-17 1986-03-20 三洋電機株式会社 結晶成長装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03194922A (ja) * 1989-12-22 1991-08-26 Stanley Electric Co Ltd ２―６族化合物半導体結晶成長装置
US5725659A (en) * 1994-10-03 1998-03-10 Sepehry-Fard; Fareed Solid phase epitaxy reactor, the most cost effective GaAs epitaxial growth technology

Also Published As

Publication number Publication date
JPH0371399B2 (enExample) 1991-11-13

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