JPS62254484A - Manufacture of dielectric board for radio frequency circuit - Google Patents
Manufacture of dielectric board for radio frequency circuitInfo
- Publication number
- JPS62254484A JPS62254484A JP9692786A JP9692786A JPS62254484A JP S62254484 A JPS62254484 A JP S62254484A JP 9692786 A JP9692786 A JP 9692786A JP 9692786 A JP9692786 A JP 9692786A JP S62254484 A JPS62254484 A JP S62254484A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- teflon
- dielectric substrate
- prepreg
- frequency circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000011521 glass Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000004744 fabric Substances 0.000 claims description 8
- 239000011256 inorganic filler Substances 0.000 claims description 8
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- 239000000945 filler Substances 0.000 claims description 6
- 239000011162 core material Substances 0.000 claims description 5
- 239000005350 fused silica glass Substances 0.000 claims description 5
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 229910000859 α-Fe Inorganic materials 0.000 claims description 2
- 239000004809 Teflon Substances 0.000 description 22
- 229920006362 Teflon® Polymers 0.000 description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 229910002012 Aerosil® Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005470 impregnation Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229920006026 co-polymeric resin Polymers 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- PEVRKKOYEFPFMN-UHFFFAOYSA-N 1,1,2,3,3,3-hexafluoroprop-1-ene;1,1,2,2-tetrafluoroethene Chemical group FC(F)=C(F)F.FC(F)=C(F)C(F)(F)F PEVRKKOYEFPFMN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- XULSCZPZVQIMFM-IPZQJPLYSA-N odevixibat Chemical compound C12=CC(SC)=C(OCC(=O)N[C@@H](C(=O)N[C@@H](CC)C(O)=O)C=3C=CC(O)=CC=3)C=C2S(=O)(=O)NC(CCCC)(CCCC)CN1C1=CC=CC=C1 XULSCZPZVQIMFM-IPZQJPLYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- QIVUCLWGARAQIO-OLIXTKCUSA-N (3s)-n-[(3s,5s,6r)-6-methyl-2-oxo-1-(2,2,2-trifluoroethyl)-5-(2,3,6-trifluorophenyl)piperidin-3-yl]-2-oxospiro[1h-pyrrolo[2,3-b]pyridine-3,6'-5,7-dihydrocyclopenta[b]pyridine]-3'-carboxamide Chemical compound C1([C@H]2[C@H](N(C(=O)[C@@H](NC(=O)C=3C=C4C[C@]5(CC4=NC=3)C3=CC=CN=C3NC5=O)C2)CC(F)(F)F)C)=C(F)C=CC(F)=C1F QIVUCLWGARAQIO-OLIXTKCUSA-N 0.000 description 1
- HFGHRUCCKVYFKL-UHFFFAOYSA-N 4-ethoxy-2-piperazin-1-yl-7-pyridin-4-yl-5h-pyrimido[5,4-b]indole Chemical compound C1=C2NC=3C(OCC)=NC(N4CCNCC4)=NC=3C2=CC=C1C1=CC=NC=C1 HFGHRUCCKVYFKL-UHFFFAOYSA-N 0.000 description 1
- 229910002019 Aerosil® 380 Inorganic materials 0.000 description 1
- -1 Perfluoroalkyl vinyl ether Chemical compound 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- AYOOGWWGECJQPI-NSHDSACASA-N n-[(1s)-1-(5-fluoropyrimidin-2-yl)ethyl]-3-(3-propan-2-yloxy-1h-pyrazol-5-yl)imidazo[4,5-b]pyridin-5-amine Chemical compound N1C(OC(C)C)=CC(N2C3=NC(N[C@@H](C)C=4N=CC(F)=CN=4)=CC=C3N=C2)=N1 AYOOGWWGECJQPI-NSHDSACASA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
- Insulating Bodies (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野）
本発明は、高周波特性に優れたプリント配線板用の誘電
体基板の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a dielectric substrate for a printed wiring board that has excellent high frequency characteristics.
ここでいうプリント配線板には高速コンピュータ用スル
ホールプリント配線板及び衛星放送受信用の平面アンテ
ナを含むものである。The printed wiring board mentioned here includes through-hole printed wiring boards for high-speed computers and flat antennas for satellite broadcast reception.
低誘電率、低誘電損失等の高周波特性に優れたプリント
配線板には、フッ素樹脂／ガラスクロス銅張板が実用化
されていることは、周知のとおりである。代表的なもの
としては、いわゆるテフロン／ガラス銅張板がある（テ
フロンは、フッ素樹脂の１つの商品名）。It is well known that fluororesin/glass cloth copper-clad boards have been put into practical use as printed wiring boards with excellent high-frequency characteristics such as low dielectric constant and low dielectric loss. A typical example is a so-called Teflon/glass copper clad plate (Teflon is a trade name for a fluororesin).
テフロン／ガラス銅張板については、例えば特開昭６０
−１９９６４７等多数の特許出願がされている。Regarding Teflon/glass copper clad plates, for example, JP-A-60
Many patent applications such as -199647 have been filed.
テフロン／ガラス鋼張板はテフロン樹脂溶液をガラスク
ロス基材に含浸し、加熱する工程を複数同経た後、プリ
プレグを所要枚数重ね合わせて、ざらに必要に応じて銅
箔を重ね合わせ、高温加熱加圧して得られる。Teflon/glass steel cladding goes through multiple steps of impregnating a glass cloth base material with Teflon resin solution and heating it, then stacks the required number of prepreg sheets, roughly overlaps copper foil as needed, and heats it at high temperature. Obtained under pressure.
このようにして得られたテフロン／ガラス銅張板は、極
めて高価である、熱時変形しやすい、スルホールめっき
付き性がわるい、耐湿性がわるい等の欠点があるにもか
かわらず、低誘電率、低誘電正接という利点により、高
周波回路、例えば、マイクロ波を使用する通信機器用プ
リント配線板用に欠くことのできないものである。Although the Teflon/glass copper clad plate obtained in this way has drawbacks such as being extremely expensive, easily deformed when heated, poor through-hole plating properties, and poor moisture resistance, it has a low dielectric constant. Due to its low dielectric loss tangent, it is indispensable for printed wiring boards for high frequency circuits, for example, communication equipment using microwaves.
本発明は、従来のテフロン／ガラス銅張板では得られな
かった低価格、熱時変形の改良、スルホールめっき付き
性の改良、耐湿性の改良、及びより低い低誘電率、低誘
電正接を得るために鋭意検討した結果、ガラスペーパー
／フッ素樹脂／無機フィラーからなる複合プリプレグを
コア材として使うことにより、前記目的が達成されると
の知見を得て完成したものである。The present invention provides low cost, improved thermal deformation, improved through-hole plating properties, improved moisture resistance, and lower dielectric constant and lower dielectric loss tangent than conventional Teflon/glass copper clad plates. As a result of extensive research, we found that the above objective could be achieved by using a composite prepreg consisting of glass paper/fluororesin/inorganic filler as the core material.
本発明は、表面材がフッ素樹脂／ガラスクロスプリプレ
グから成り、コア材がガラスペーパー／フッ素樹脂／無
機フィラープリプレグから成ることを特徴とする高周波
回路用誘電体基板の製造方法である。The present invention is a method for manufacturing a dielectric substrate for high frequency circuits, characterized in that the surface material is made of fluororesin/glass cloth prepreg, and the core material is made of glass paper/fluororesin/inorganic filler prepreg.
本発明においてフッ素樹脂としては、４フツ化工ヂレン
樹脂（Ｐ丁ＦＥ） 、４フッ化エチレン−６フツ化プロ
ピレン共重合樹脂（ＦＥＰ ） 、４フッ化エチレン−
パーフルオロアルキルビニルエーテル共重合樹脂（ＰＦ
Ａ ）等が用いられる。これらフッ素樹脂の水性ディス
パージョン液をガラスクロスに含浸、高温加熱してプリ
プレグを得ることができる。In the present invention, examples of the fluororesin include tetrafluoroethylene resin (PTFE), tetrafluoroethylene-hexafluoropropylene copolymer resin (FEP), and tetrafluoroethylene-hexafluoropropylene copolymer resin (FEP).
Perfluoroalkyl vinyl ether copolymer resin (PF
A) etc. are used. A prepreg can be obtained by impregnating glass cloth with an aqueous dispersion liquid of these fluororesins and heating it at high temperature.
フッ素樹脂／ガラスクロスプリプレグは市販品の凸版印
刷■のケムファブ■を使用することもできる。As the fluororesin/glass cloth prepreg, commercially available ChemFab ■ from Toppan Printing ■ can also be used.
一方、ガラスペーパーに含浸するテフロン樹脂の水性デ
ィスパージョンとしては、三井・デュポン■の“テフロ
ン”３０Ｊ 、 “テフロン”１２０等が〜２０μｍ
、長さ１〜１００ｍ、重１３０〜２００ ｇ／７Ｆｆの
ものを使用することができる。このようなものとして、
例えば、本州製紙側のＧ）Ｉｃ−００−７５、オリベス
ト■の５ＹＯ−０７５、日本板ガラス側のＧＰ−５０、
日本バイリーン■のＥＰ−４０５０１ＥＰ−４０７５等
がある。On the other hand, as an aqueous dispersion of Teflon resin to be impregnated into glass paper, Mitsui DuPont's "Teflon" 30J, "Teflon" 120, etc. are available with a thickness of ~20 μm.
, a length of 1 to 100 m, and a weight of 130 to 200 g/7Ff can be used. As such,
For example, Honshu Paper's G)Ic-00-75, Olivest's 5YO-075, Nippon Sheet Glass's GP-50,
There are EP-40501EP-4075 of Nippon Vilene ■.
無機フィラーとしては、粒径２００μｍ以下、好ましく
は１０μｍ以下のアルミナ、溶融シリカ、Ｓ ！ ０２
／ Ａ Ｉ ２０３の混合酸化物、シリカ、酸化チタ
ン、酸化マグネシウム、ベリリア、フェライト及び微小
中空球状充填剤を使うことができる。Examples of inorganic fillers include alumina, fused silica, and S! having a particle size of 200 μm or less, preferably 10 μm or less. 02
/ AI 203 mixed oxides, silica, titanium oxide, magnesium oxide, beryllia, ferrite and micro hollow spherical fillers can be used.
アルミナとしては日本アエロジル側のアルミニ日本シリ
カニ業■のＨＲ−３８（粒径８μｍ）、Ｓ ！ ０２
／ Ａ Ｉ ２０３の混合酸化物としては日本アエ０ジ
ル■のＣ０Ｋ８４ （粒径２０ＴｒＬμＴｒＬ）、シ
リカとしては日本アエロジル■のアエロジル３８０（粒
径７Ｔｒ１．μＴｒＬ）、酸化チタンとしては日本アエ
ロジル■のチタニウムオキサイドＰ２５（粒径３０ｍμ
ＴｒＬ）等がある。微小中空球状充填剤としては日本シ
リカニ業ＩＩのガラスマイクロバルーンＲ（粒径２〜２
００μ而）、５Ｌ（２〜１７５μ而） 、’ ＦＴＤ２
０２ （２〜１７５μＴｒＬ）等がある。Examples of alumina include HR-38 (particle size 8 μm) from Nippon Aerosil's Aluminum Nippon Silikani Industry ■, and S! 02
The mixed oxide of A I 203 is C0K84 (particle size 20TrLμTrL) from Nippon Aerosil ■, the silica is Aerosil 380 (particle size 7Tr1.μTrL) from Nippon Aerosil ■, and the titanium oxide is titanium oxide from Nippon Aerosil ■. P25 (particle size 30mμ
TrL) etc. As the micro hollow spherical filler, Nippon Silikani Industry II's Glass Micro Balloon R (particle size 2 to 2
00μ), 5L (2~175μ),' FTD2
02 (2 to 175 μTrL), etc.
前記テフロンの水性ディスパージョン液中に前記フィラ
ーを固形分比５〜２００％（重量％、以下同じ）混合し
、この混合液を前記ガラスペーパー基材に含浸した後、
加熱してプリプレグを得ることができる。After mixing the filler in the Teflon aqueous dispersion liquid at a solid content ratio of 5 to 200% (wt%, the same hereinafter) and impregnating the glass paper base material with this mixed liquid,
A prepreg can be obtained by heating.
フィラーの混合化は、５％未満では添加効果がなく、２
００％を越えると混合液の粘度が上昇してガラスペーパ
ーへの含浸作業が困難となる。好ましくは１０〜５０％
である。When mixing fillers, there is no addition effect when the amount is less than 5%, and 2
If it exceeds 0.00%, the viscosity of the mixed liquid increases, making it difficult to impregnate glass paper. Preferably 10-50%
It is.
一方、ガラスペーパー基材重量に対して前記混合物の含
浸母は５００％〜１ｓｏｏ％が好ましい。５００％未満
ではプレス成形時空、隙ができやすく、１５００％を越
えるとプレス成形後の基板が変形しやすくなる。On the other hand, the impregnating base of the mixture is preferably 500% to 1 soo% based on the weight of the glass paper base material. If it is less than 500%, gaps will easily form during press molding, and if it exceeds 1500%, the substrate after press molding will be easily deformed.
なお、本発明には、片面又は両面に金属箔を積層した金
属張り誘電体基板も当然含まれる。Note that the present invention naturally also includes a metal-clad dielectric substrate in which metal foil is laminated on one or both sides.
本発明に従うと、基材として含浸性の優れたガラスペー
パーを使用しているため、従来ガラスクロスに対するテ
フロン樹脂の含浸性がわるく、複数個の含浸高温加熱工
程が必要であったものを、１回の含浸・加熱工程でプリ
プレグを製造することができ、低コスト化及び耐湿性の
改良ができると共に、無機フィラーによる低誘電損失、
低コスト化、スルホールめっき付き性の改良、熱時変形
の改良が可能である。また、無機フィラーとしてガラス
マイクロバルーン等の微小中空球状充填剤を使用するこ
とにより、低誘電率化も併せて可能である。According to the present invention, since glass paper with excellent impregnation properties is used as a base material, the impregnation properties of Teflon resin to glass cloth were poor and multiple impregnation and high temperature heating processes were required. Prepreg can be manufactured through multiple impregnation and heating processes, reducing costs and improving moisture resistance, as well as low dielectric loss and
It is possible to reduce costs, improve through-hole plating properties, and improve thermal deformation. Further, by using a microscopic hollow spherical filler such as a glass microballoon as an inorganic filler, it is also possible to lower the dielectric constant.
本発明の高周波回路用金属張り誘電体基板の製造方法に
ついて、以下に実施例及び比較例により説明する。The method for manufacturing a metal-clad dielectric substrate for high-frequency circuits according to the present invention will be described below using Examples and Comparative Examples.
実施例−１
“テフロンディスパージョン［“テフロン″３０−月に
固形分比５０％の溶融シリカ「ＨＲ−８４Ｊを分散した
混合液を、基材としてガラスベーパーｒ Ｇ）Ｉｃ−０
０−７５４に含浸させ、２００℃で１０分乾燥し、ガラ
スベーパー／テフロン樹脂／無機フィラーのプリプレグ
を得た。このプリプレグの重量は５２０ｇ／Ｔｒｔ１厚
みは０．３ｍであった。このプリプレグを４枚重ね合わ
せ、ざらに両表面に厚さ０．２ｍのテフロン／ガラスク
ロスプリプレグ「ケムファブのＴ、Ｃ，Ｇ、Ｆ Ｎｏ、
１００−８４を１枚ずつ重ね合わせ、ざらに両表面厚さ
５０μ面のテフロンＰＦＡフィルムを重ね、さらに厚さ
３５μｍの電解銅箔を重ね合わせ、温度３８０℃、プレ
ス圧力４ｏｔ＜ｙ／ａＡで、４０分間加熱加圧して両面
金属張り誘電体基板を得た。Example-1 Teflon dispersion ["Teflon" 30-month] A mixed liquid in which fused silica "HR-84J" with a solid content ratio of 50% was dispersed was used as a base material for glass vapor r G) Ic-0
0-754 and dried at 200° C. for 10 minutes to obtain a prepreg of glass vapor/Teflon resin/inorganic filler. The weight of this prepreg was 520 g/Trt1 thickness was 0.3 m. Four sheets of this prepreg are stacked together, and roughly coated with 0.2 m thick Teflon/glass cloth prepreg "Chem Fab's T, C, G, F No.
100-84 one by one, roughly overlapping a Teflon PFA film with a thickness of 50 μm on both surfaces, and then overlapping an electrolytic copper foil with a thickness of 35 μm, at a temperature of 380°C and a press pressure of 4ot<y/aA, A double-sided metal-clad dielectric substrate was obtained by heating and pressing for 40 minutes.
実施例−２
実施例−１において、溶融シリカ［）ｆＲ−８４Ｊをガ
ラスマイクロバルーン「ＳＩ」に、添加量を５％に替え
たほかは、実施例−１と同様にして両面金属張り誘電体
基板を得た。Example 2 A double-sided metal-clad dielectric was prepared in the same manner as in Example 1, except that the fused silica [)fR-84J was replaced with glass microballoons "SI" and the amount added was changed to 5%. I got the board.
実施例−３
実施例−１において、「ＨＲ−８４Ｊを［アルミニウム
オキサイドＣ」に、添加量を１０％に替えたほかは、実
施例−１と同様にして両面金属張り誘電体基板を得た。Example-3 A double-sided metal-clad dielectric substrate was obtained in the same manner as in Example-1, except that HR-84J was replaced with [aluminum oxide C] and the amount added was changed to 10%. .
実施例−４
実施例−１において、「ＭＲ−８４Ｊを「アエロジル３
８０」に替えたほかは、実施例−１と同様にして両面金
属張り誘電体基板を得た。Example-4 In Example-1, “MR-84J” was replaced with “Aerosil 3”.
A double-sided metal-clad dielectric substrate was obtained in the same manner as in Example 1, except that the substrate was changed to "80".
実施例−５
実施例−１において、テフロンディスパージョン「“テ
フロン゛’３０−月を［“テフロン” １２０ Ｊに替
えたほかは、実施例−１と同様にして両面金属張り誘電
体基板を得た。Example-5 A double-sided metal-clad dielectric substrate was obtained in the same manner as in Example-1, except that the Teflon dispersion "Teflon" was replaced with "Teflon" 120 J. Ta.
実施例−６
実施例−５において、ｒＨＲ−８４ＪをＳ！０２／Ａｌ
２Ｏ３混合物「ＣＯに８４」に替えた以外は、実施例−
５と同様にして両面金属張り誘電体基板を得た。Example-6 In Example-5, rHR-84J was S! 02/Al
Example - except that the 2O3 mixture was changed to ``84 to CO''
A double-sided metal-clad dielectric substrate was obtained in the same manner as in Step 5.
実施例−７
実施例−１において、ガラスベーパーをｌ’−ＧＰ−５
０」に替えて、コア材としてのプリプレグを得た。Example-7 In Example-1, the glass vapor was l'-GP-5.
0'', prepreg was obtained as a core material.
該プリプレグは厚さ０．２履重量３５０ｇであった。The prepreg had a thickness of 0.2 feet and a weight of 350 g.
該プリプレグ６枚を重ね合わせ、表面材として「ケムフ
７ブ＠ Ｔ、Ｃ，Ｇ、Ｆ Ｎｏ、１００−８Ｊを使用
して、実施例−１と同様にして両面金属張り誘電体基板
を得た。A double-sided metal-clad dielectric substrate was obtained in the same manner as in Example-1 by stacking the six prepregs and using Chemfu 7bu@T, C, G, F No., 100-8J as the surface material. .
比較例−１
０，２＃テフロン／ガラスクロスプリプレグ「ケムフア
ブ’２’Ｔ、Ｃ，Ｇ、Ｆ Ｎｏ、１００−８Ｊを８枚
重ね合わせ、ざらに両面に厚さ５０μｍのＰＦ＾フィル
ムを重ね、しかる後両面に３５μｍの電解銅箔を重ねて
、３８０℃−４０分加熱加圧して、両面金属張り誘電体
基板を（ｑた。Comparative Example-1 8 sheets of 0.2# Teflon/Glass Cloth Prepreg "Chemufabu'2'T, C, G, F No., 100-8J were stacked together, and a 50 μm thick PF^ film was roughly stacked on both sides, Thereafter, 35 μm electrolytic copper foil was placed on both sides and heated and pressed at 380° C. for 40 minutes to form a double-sided metal-clad dielectric substrate.
比較例−２
実施例−１において、溶融シリカｒＨＲ−８４Ｊを添加
しない点を除いて、実施例−１と同様にして両面金属張
り誘電体基板を得た。Comparative Example 2 A double-sided metal-clad dielectric substrate was obtained in the same manner as in Example 1, except that fused silica rHR-84J was not added.
実施例−１〜７及び比較例−１〜２で得られた両面金属
張り誘電体基板の特性評価結果を表−１に示す。Table 1 shows the characteristics evaluation results of the double-sided metal-clad dielectric substrates obtained in Examples 1 to 7 and Comparative Examples 1 to 2.
表−１から明らかなように、本発明による誘電体基板は
、従来のテフロン／ガラス銅張板と比較して誘電特性を
さらに向上させることができると共に、コア材に無機フ
ィラーを添加しているので、従来問題であった熱時の変
形、スルホールめっき付き性、耐湿性及びコストの点で
大幅な改良を達成することができた。As is clear from Table 1, the dielectric substrate according to the present invention can further improve the dielectric properties compared to the conventional Teflon/glass copper clad board, and also has an inorganic filler added to the core material. Therefore, we were able to achieve significant improvements in the conventional problems of deformation during heating, through-hole plating resistance, moisture resistance, and cost.
Claims (2)
ら成り、コア材がガラスペーパー／フッ素樹脂／無機フ
ィラープリプレグから成ることを特徴とする高周波回路
用誘電体基板の製造方法。(1) A method for producing a dielectric substrate for high frequency circuits, characterized in that the surface material is made of fluororesin/glass cloth prepreg, and the core material is made of glass paper/fluororesin/inorganic filler prepreg.
ミナ、溶融シリカ、ＳｉＯ＿２／Ａｌ＿２Ｏ＿３の混合
酸化物、シリカ、酸化チタン、酸化マグネシウム、ベリ
リア、フェライト及び微小中空球状充填剤の内、少なく
とも１つを含有していることを特徴とする特許請求の範
囲第１項記載の高周波回路用誘電体基板の製造方法。(2) The inorganic filler contains at least one of alumina, fused silica, mixed oxide of SiO_2/Al_2O_3, silica, titanium oxide, magnesium oxide, beryllia, ferrite, and micro hollow spherical filler with a particle size of 200 μm or less. A method for manufacturing a dielectric substrate for a high frequency circuit according to claim 1, characterized in that the dielectric substrate for a high frequency circuit contains:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9692786A JPS62254484A (en) | 1986-04-28 | 1986-04-28 | Manufacture of dielectric board for radio frequency circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9692786A JPS62254484A (en) | 1986-04-28 | 1986-04-28 | Manufacture of dielectric board for radio frequency circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62254484A true JPS62254484A (en) | 1987-11-06 |
Family
ID=14177981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9692786A Pending JPS62254484A (en) | 1986-04-28 | 1986-04-28 | Manufacture of dielectric board for radio frequency circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62254484A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0346388A (en) * | 1989-07-14 | 1991-02-27 | Toshiba Chem Corp | Printed wiring board |
| JPH0424997A (en) * | 1990-05-15 | 1992-01-28 | Matsushita Electric Works Ltd | Manufacture of multilayer printed board |
| JP2004281456A (en) * | 2003-03-12 | 2004-10-07 | Matsushita Electric Works Ltd | Multilayer printed circuit board |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60214941A (en) * | 1984-04-10 | 1985-10-28 | 株式会社 潤工社 | Printed substrate |
| JPS60240436A (en) * | 1984-05-15 | 1985-11-29 | Matsushita Electric Works Ltd | Preparation of laminated board for electric use |
| JPS6289392A (en) * | 1985-10-15 | 1987-04-23 | 鐘淵化学工業株式会社 | Glass fiber reinforced electrical laminated plate |
-
1986
- 1986-04-28 JP JP9692786A patent/JPS62254484A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60214941A (en) * | 1984-04-10 | 1985-10-28 | 株式会社 潤工社 | Printed substrate |
| JPS60240436A (en) * | 1984-05-15 | 1985-11-29 | Matsushita Electric Works Ltd | Preparation of laminated board for electric use |
| JPS6289392A (en) * | 1985-10-15 | 1987-04-23 | 鐘淵化学工業株式会社 | Glass fiber reinforced electrical laminated plate |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0346388A (en) * | 1989-07-14 | 1991-02-27 | Toshiba Chem Corp | Printed wiring board |
| JPH0424997A (en) * | 1990-05-15 | 1992-01-28 | Matsushita Electric Works Ltd | Manufacture of multilayer printed board |
| JP2004281456A (en) * | 2003-03-12 | 2004-10-07 | Matsushita Electric Works Ltd | Multilayer printed circuit board |
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