JPS62252154A - Semiconductor package - Google Patents
Semiconductor packageInfo
- Publication number
- JPS62252154A JPS62252154A JP9579586A JP9579586A JPS62252154A JP S62252154 A JPS62252154 A JP S62252154A JP 9579586 A JP9579586 A JP 9579586A JP 9579586 A JP9579586 A JP 9579586A JP S62252154 A JPS62252154 A JP S62252154A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- package
- semiconductor
- lead
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 239000011347 resin Substances 0.000 claims abstract description 31
- 229920005989 resin Polymers 0.000 claims abstract description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 13
- 239000000853 adhesive Substances 0.000 abstract description 8
- 230000001070 adhesive effect Effects 0.000 abstract description 8
- 238000000465 moulding Methods 0.000 abstract description 6
- 238000003466 welding Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract 5
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 239000011521 glass Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910000906 Bronze Inorganic materials 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000010974 bronze Substances 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- POIUWJQBRNEFGX-XAMSXPGMSA-N cathelicidin Chemical compound C([C@@H](C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CO)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H]([C@@H](C)CC)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CCC(N)=O)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CC(N)=O)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](C(C)C)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)O)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CO)C(O)=O)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@H](CC(O)=O)NC(=O)CNC(=O)[C@H](CC(C)C)NC(=O)[C@@H](N)CC(C)C)C1=CC=CC=C1 POIUWJQBRNEFGX-XAMSXPGMSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体素子を収容する半導体パッケージに関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor package that houses a semiconductor element.
（従来技術とその問題点〕
一般に、半導体素子はその機能を有効に発揮するために
は気密に形成されたパッケージ内に収容する必要性を有
する。(Prior Art and its Problems) In general, a semiconductor element needs to be housed in an airtight package in order to effectively exhibit its functions.
第２図は半導体レーザ素子を収容した従来のパッケージ
の構成を示している。FIG. 2 shows the structure of a conventional package containing a semiconductor laser element.
図中、符号１はパッケージである。このパッケージ１は
基部となる金属製のアイレット２と、このアイレット２
に７ランジ３ａ部をもって抵抗溶接されたほぼ円筒状の
キャップ３と、このキャップ３の頂部内側に接着材４を
もって接着された透明な光透過板５とによって気密に形
成されている。In the figure, numeral 1 is a package. This package 1 consists of a metal eyelet 2 that serves as the base, and this eyelet 2.
The cap 3 is airtightly formed by a substantially cylindrical cap 3 which is resistance welded with a 7 flange 3a, and a transparent light transmitting plate 5 which is bonded to the inside of the top of the cap 3 with an adhesive 4.
このパッケージ１内には半導体レーザ素子からなる発光
素子６と受光素子７とが設けられている。In this package 1, a light emitting element 6 and a light receiving element 7 made of a semiconductor laser element are provided.
これらの発光素子６と受光素子７とはそれぞれ、アイレ
ット２の貫通孔部にガラス８をもって貫通状態にして支
持されたリード９．９に金属細線１０をもってワイヤボ
ンディングされ電気的に接続されている。The light-emitting element 6 and the light-receiving element 7 are each electrically connected by wire bonding with a thin metal wire 10 to a lead 9.9 which is supported in a penetrating state with a glass 8 in a through-hole portion of the eyelet 2.
この従来のパッケージ１は高い気密性を得ることができ
るという利点があるが、次のような問題点があった。Although this conventional package 1 has the advantage of being able to achieve high airtightness, it has the following problems.
発光素子６は半導体レーザ素子からなり、その発光時に
発熱するので、；その発熱良を外部へ放散するために、
アイレット２を鉄、鉄−ニッケル合金、銅合金等の金属
によって製造しなければならなかった。従って、アイレ
ット２を製造するのに、具体的には発光素子６および受
光素子７を正確に位置決めして搭載する座を形成したり
、リード９を貫通させるための貫通孔を穿設するために
機械加工を施す必要があり、コストが高かった。The light emitting element 6 is composed of a semiconductor laser element and generates heat when emitting light; therefore, in order to dissipate the generated heat to the outside,
The eyelet 2 had to be made of metal such as iron, iron-nickel alloy, copper alloy, etc. Therefore, when manufacturing the eyelet 2, specifically, it is necessary to form a seat for accurately positioning and mounting the light emitting element 6 and the light receiving element 7, and to form a through hole for passing the lead 9 through. It required machining and was expensive.
また、金属であるアイレット２に金属であるリード９を
相互間を絶縁するとともにパッケージ１の気密が保持で
きる固着をするためには、両者をガラス８によって接合
しなければならない。ところが、ガラス８とリード９と
の接合を気密に行なわせるには、リード９の材質をガラ
ス８とほぼ同じ熱膨張係数を有し、かつ、表面にガラス
８と溶着される酸化膜が形成され易い鉄系の金属とする
必要があり、実際には４２７０イなどの鉄−ニッケル合
金や鉄−ニッケルーコバルト合金（コバール）によって
リード９を製造する必要があった。In addition, in order to insulate the metal lead 9 to the metal eyelet 2 and to secure the package 1 airtightly, the two must be bonded with glass 8. However, in order to achieve an airtight bond between the glass 8 and the lead 9, the material of the lead 9 must have approximately the same coefficient of thermal expansion as the glass 8, and an oxide film must be formed on the surface to be welded to the glass 8. It was necessary to use an iron-based metal that is easy to use, and in reality, the lead 9 had to be manufactured from an iron-nickel alloy such as 4270I or an iron-nickel-cobalt alloy (Kovar).
また、このリード９に金属細線１０をワイヤボンディン
グによって接続するためには、ボンディング部分に金等
の貴金属をリード９に鍍金する必要があり、非常に高価
なものとなっていた。Furthermore, in order to connect the thin metal wire 10 to the lead 9 by wire bonding, it is necessary to plate the lead 9 with a noble metal such as gold at the bonding portion, making the lead 9 very expensive.
また、レーザ光を透過するためには光透過板５を設ける
必要があるが、従来は光透過板５をガラス板またはサフ
ァイア板によって製造し、この光透過板５をキャップ３
の頂部内面に接着材４を介して予め接着して組立ててお
かなければならなかった。そして、光透過板５がガラス
板の場合には低融点ガラスを接着材４として、金属製の
キャップ３に接着しなければならず、構成が複雑である
とともに、多くの製造工程を要するもので、更に、キャ
ップ３はアイレット２と同様に鉄−ニッケル合金、鉄−
ニッケルーコバルト合金等のガラスとの溶着性に優れて
いる金属でなければならず、しかも光透過板５をキャッ
プ３の所定位置に取付ける必要があった。Further, in order to transmit the laser beam, it is necessary to provide a light transmitting plate 5, but conventionally the light transmitting plate 5 is manufactured from a glass plate or a sapphire plate, and this light transmitting plate 5 is attached to the cap 3.
It had to be assembled in advance by adhering it to the inner surface of the top part with an adhesive 4. If the light transmitting plate 5 is a glass plate, it must be bonded to the metal cap 3 using a low melting point glass as the adhesive 4, resulting in a complicated structure and requiring many manufacturing steps. Furthermore, like the eyelet 2, the cap 3 is made of iron-nickel alloy, iron-
It had to be made of a metal such as a nickel-cobalt alloy that has excellent welding properties with glass, and it was also necessary to attach the light transmitting plate 5 to a predetermined position on the cap 3.
更に、従来のパッケージ１はその組立の工数が多く、長
時間を要し、コストも高いものであった。Furthermore, the conventional package 1 required many man-hours to assemble, took a long time, and was expensive.
実際には、先ず機械加工によって製造されたアイレツｌ
−２に各リード９．９をガラス８．８によって固着し、
次に発光素子６および受光素子７をアイレット２に固着
し、次に発光素子６および受光素子７と各リード９．９
とをワイヤボンディングによって金属細線１０．１０を
介して接続し、次に予め光透過板５を一体的に接着して
おいたキャップ３をアイレット２の上に各発光素子６お
よび受光素子７を覆うようにして被せ、アイレット２と
キャップ３の７ランジ３ａとを抵抗溶接によって固着し
気密封止するという、複雑で多くの工程をもって組立て
なければならなかった。In reality, the eyelets are first manufactured by machining.
-2 each lead 9.9 is fixed with glass 8.8,
Next, the light emitting element 6 and the light receiving element 7 are fixed to the eyelet 2, and then the light emitting element 6 and the light receiving element 7 are attached to each lead 9.9.
are connected via thin metal wires 10 and 10 by wire bonding, and then a cap 3 to which a light transmitting plate 5 has been integrally bonded in advance is placed over the eyelet 2 to cover each light emitting element 6 and light receiving element 7. The eyelet 2 and the seven flange 3a of the cap 3 were fixed and hermetically sealed by resistance welding, and the assembly required many complicated steps.
また、最近における半導体素子開発の促進に伴い、その
半導体素子を収容するパッケージに要求される条件も非
常に多様化して来ている。そして、例えばパッケージ内
の気密性に関しても、半導体素子の性能向上に伴って従
前より低い気密性のパッケージにおいても従前と同等も
しくはそれ以上の性能を発揮できるものが出現している
。ところがこのようにして開発された半導体素子を収容
するために、第１図に示すようなパッケージ１を用いる
と、必要以上の高い気密性をも実現可能なパッケージを
用いることとなり、高価になるという問題点がある。更
に、発熱団が少ない半導体レーザ素子では放熱用のアイ
レット２は金ｆｆｔＪである必要はなくなる。Furthermore, with the recent promotion of the development of semiconductor devices, the conditions required for packages that accommodate semiconductor devices have become extremely diverse. As for the airtightness inside the package, for example, as the performance of semiconductor elements improves, packages with lower airtightness than before have appeared that can exhibit performance equal to or better than before. However, if a package 1 as shown in Fig. 1 is used to house the semiconductor device developed in this way, a package that can achieve higher airtightness than necessary would be used, which would be expensive. There is a problem. Furthermore, in a semiconductor laser device with a small number of exothermic groups, the heat dissipation eyelet 2 does not need to be made of gold fftJ.
本発明はこれらの点に鑑みてなされたものであり、簡単
な構成により半導体素子を所要の気密性を有するパッケ
ージに収容することができ、組立も簡単に行なうことが
でき、高価な材料が不要であり、部品点数も少なく、コ
ストも低廉な半導体パッケージを提供することを目的と
する。The present invention has been made in view of these points, and has a simple structure that allows a semiconductor element to be housed in a package with the required airtightness, easy assembly, and no need for expensive materials. The purpose is to provide a semiconductor package with a small number of parts and a low cost.
本発明の半導体パッケージは、半導体素子とワイヤボン
ディングによって接続されるリードが一体に樹脂モール
ドされた樹脂基体と、前記半導体素子とリードをワイヤ
ボンディングした後に前記半導体素子を密閉する蓋部材
とをもって形成されていることを特徴とする。The semiconductor package of the present invention is formed of a resin base in which leads connected to a semiconductor element by wire bonding are integrally resin-molded, and a lid member that seals the semiconductor element after wire bonding the semiconductor element and the leads. It is characterized by
以下、本発明の実施例を第１図について説明する。 An embodiment of the present invention will be described below with reference to FIG.
第１図の実施例は半導体素子として半導体レーザ素子を
用いた場合を示している。The embodiment shown in FIG. 1 shows a case where a semiconductor laser element is used as the semiconductor element.
本実施例のパッケージ１１は、従来のアイレット２に相
当する部分を樹脂材とし、半導体素子とワイヤボンディ
ングによって接続されるリードを内外に挿通させるよう
に一体成形することによって樹脂基体１２として形成し
、この樹脂基体１２の上部に樹脂材からなるキャップ１
３を蓋部材として気密に閉塞して形成されている。In the package 11 of this embodiment, a portion corresponding to the conventional eyelet 2 is made of a resin material, and a resin base 12 is formed by integrally molding the lead connected to the semiconductor element by wire bonding so as to be inserted inside and outside. A cap 1 made of a resin material is placed on the top of this resin base 12.
3 is used as a lid member and is airtightly closed.
更に説明すると、樹脂基体１２はその一体成形時に、内
部に固着する発光素子１５および受光素子１６とワイヤ
ボンディングにより接続するリード１７．１７を内外に
貫通するようにして同時に樹脂モールドしている。また
同時に半導体素子を搭載するヒートシンク２１および受
光素子１６を固着するグランド部材１８も一体成形して
いる。To explain further, when the resin base 12 is integrally molded, the leads 17 and 17 connected to the light emitting element 15 and the light receiving element 16 fixed inside by wire bonding are simultaneously molded with resin so as to penetrate inside and outside. At the same time, the heat sink 21 on which the semiconductor element is mounted and the ground member 18 on which the light receiving element 16 is fixed are also integrally molded.
ヒートシンク２１にもグランド部材（図示せず）が抵抗
溶接などにより取付けられている。これらのリード１７
、グランド部材１８およびヒートシンク２１は電気的導
通部材とするために金属によって形成する必要があるが
、樹脂基体１２の一体成形時に樹脂モールドによって樹
Ｗｔ基体１２に固着されるものであるから、リード１７
、グランド部材１８およびヒートシンク２１の材料とな
る金属としては樹脂モールドが可能であればよい。従っ
て、リード１７、グランド部材１８およびヒートシンク
２１としては電気的導通性に優れたアルミニウム、りん
青銅等を用いることができ、従来のアイレット２および
リード９のように特殊で高価な合金類を用いる必要がな
い。また、リード１７およびグランド部材１８を樹脂材
で直接一体化成形するものであるから、従来のようなア
イレット２とリード９との金属同志をガラス８により固
着する工程が不要となる。A ground member (not shown) is also attached to the heat sink 21 by resistance welding or the like. These leads 17
, the ground member 18 and the heat sink 21 need to be made of metal in order to be electrically conductive members, but since they are fixed to the wood Wt base 12 by resin molding when the resin base 12 is integrally molded, the leads 17
The metal material for the ground member 18 and the heat sink 21 may be resin molded. Therefore, aluminum, phosphor bronze, etc. with excellent electrical conductivity can be used for the lead 17, the ground member 18, and the heat sink 21, and there is no need to use special and expensive alloys like the conventional eyelet 2 and lead 9. There is no. Further, since the lead 17 and the ground member 18 are directly integrally molded from a resin material, the conventional step of fixing the metal parts of the eyelet 2 and the lead 9 together with the glass 8 is not necessary.
なお、リード１７、グランド部材１８およびヒートシン
ク２１の樹脂モールド部には、気密性の向上や扱は防止
のため、潰し加工、段差加工、折曲げ加工等を施してお
くのが好ましい。次に、グランド部材１８へ受光素子１
６、ヒートシンク２１へ発光素子１５を固着した後に、
それぞれを金属ｉｌｌ！１９．１９をもって電気的に接
続する。Note that the resin molded parts of the leads 17, the ground member 18, and the heat sink 21 are preferably subjected to crushing, step processing, bending, etc. in order to improve airtightness and prevent handling. Next, the light receiving element 1 is placed on the ground member 18.
6. After fixing the light emitting element 15 to the heat sink 21,
Metal ill each one! 19. Connect electrically at 19.
この場合、リード１７をアルミニウムによって形成して
おけば、アルミニウムからなる金属細線１９を直接ワイ
ヤボンディングすることがで′き極めて簡単に接続する
ことができる。また、リード１７をりん青銅などによっ
て形成した場合には、予めワイヤボンディング用の金属
皮膜をリード先端部に施しておけばよむ）。次に、樹脂
材からなる蓋部材であるキャップ′１３を樹脂基体１２
と超音波接合または接着剤により気密に接合し、発光素
子１５および受光素子１６をパッケージ１１内に気密封
止する。なお、キャップ１３は光透過性の樹脂材で一体
形成してもよく、また、キャップ頂部に光透過板１４を
樹脂接着剤２０などで接着したものを用いてもよい。こ
のパッケージ１１内は発光素子１５および受光素子１６
の機能が正常に発揮されるに必要かつ十分な気密性が確
保されている。実際にはリード１７およびグランド部材
１８の樹脂基体１２への一体成形部における気密保持能
力は、従来の金属とガラスとの接着部の気密保持能力よ
り劣るが、極めて高い気密性が要求されない発光素子１
５および受光素子１６を封止する場合には、本実施例の
方が製作工数および部品点数も少なく、部材のコストも
低廉である等はるかに優れている。なお、発光素子１５
としても発熱量が少ないものを用いたり、熱伝導性が良
好な樹脂材を用いれば、冷却に必要な放熱効果も小さく
て済むので、従来のように金属製のアイレット２を用い
る必要がなくなり、本実施例のようにグランド部材を接
続したヒートシンク２１を樹脂基体１２の樹脂モールド
成形時に一体成形しておくだけで十分である。In this case, if the leads 17 are made of aluminum, the thin metal wires 19 made of aluminum can be directly wire-bonded and the connection can be made very easily. Furthermore, if the leads 17 are made of phosphor bronze or the like, a metal film for wire bonding may be applied to the tips of the leads in advance). Next, the cap '13, which is a lid member made of a resin material, is attached to the resin base 12.
The light emitting element 15 and the light receiving element 16 are hermetically sealed in the package 11 by ultrasonic bonding or adhesive. Note that the cap 13 may be integrally formed of a light-transmitting resin material, or may be formed by bonding a light-transmitting plate 14 to the top of the cap with a resin adhesive 20 or the like. Inside this package 11 are a light emitting element 15 and a light receiving element 16.
The necessary and sufficient airtightness is ensured for the function of the equipment to be properly performed. In reality, the airtightness of the integrally molded parts of the leads 17 and ground member 18 on the resin base 12 is inferior to the airtightness of conventional bonded parts between metal and glass, but this is a light-emitting element that does not require extremely high airtightness. 1
5 and the light-receiving element 16, this embodiment is much superior in that it requires fewer manufacturing steps and parts, and the cost of the members is lower. Note that the light emitting element 15
However, if a material with low heat generation or a resin material with good thermal conductivity is used, the heat dissipation effect required for cooling will be small, so there is no need to use metal eyelets 2 as in the past. It is sufficient to integrally mold the heat sink 21 to which the ground member is connected as in this embodiment when the resin base 12 is resin molded.
このように本実施例においては、リード１７の固着はリ
ード１７をインサートするようにして樹脂基体１２の樹
脂モールドを行なうだけでよく、従来のように金属製の
アイレット２やリード固着用のガラス８を用いなくても
よく、製造工程が大きく短縮され、しかも製造も極めて
簡単となり、コストの低廉化が図られる。また、リード
１７として従来の４２７０イやコバールに代えてアルミ
ニウム材を用いることができるので、発光素子１５およ
び受光素子１６とワイヤボンディングするアルミニウム
の金属細線１９を直接リード１７に接続することができ
、しかも従来のように員金属の鍍金を施す必要がなく、
工数も少なくなり、材料費の低減化を図ることができる
。また、従来はアイレット２およびキャップ３をそれぞ
れ金属加工によって製造するとともに相互に抵抗溶接す
ることによって気密封止していたものを、本実施例にお
いては樹脂基体１２およびキャップ１８を４それぞれ樹
脂の一体成形により一挙に製造することができ、製造も
容易となり、しかも部品点数が少なくなり、コストも低
廉となる。このようにしてパッケージ１１全体の構成が
従来のパッケージ１に比べて簡単となるため、パッケー
ジ１１全体の容積を小さく形成することができる。特に
、発光素子１５として発熱量が少量の半導体レーザ索、
子を用いた場合には、ヒートシンク２１を小型にするこ
とが可能となり、パッケージ１１の小型化を一層促進す
ることができる。As described above, in this embodiment, the fixing of the leads 17 can be done by simply inserting the leads 17 and molding the resin base 12, and instead of using the metal eyelets 2 or the glass 8 for fixing the leads as in the conventional case. The manufacturing process is greatly shortened, the manufacturing process is also extremely simple, and the cost can be reduced. Further, since an aluminum material can be used as the lead 17 instead of the conventional 4270I or Kovar, the thin aluminum metal wire 19 that is wire-bonded to the light emitting element 15 and the light receiving element 16 can be directly connected to the lead 17. Moreover, there is no need to plate the member metal as in the past,
The number of man-hours is also reduced, and material costs can be reduced. In addition, in the present embodiment, the resin base 12 and the cap 18 are each made of resin, whereas in the past, the eyelet 2 and the cap 3 were each manufactured by metal processing and hermetically sealed by resistance welding to each other. It can be manufactured all at once by molding, making it easy to manufacture, reducing the number of parts, and reducing costs. In this way, the overall structure of the package 11 is simpler than that of the conventional package 1, so that the overall volume of the package 11 can be made smaller. In particular, as the light emitting element 15, a semiconductor laser wire with a small amount of heat generation,
When a child is used, the heat sink 21 can be made smaller, and the package 11 can be made smaller.
なお、前記実施例においては、半導体素子としてヒート
シンク２１上に搭載する半導体レーザ素子および受光素
子を用いているが、樹脂基体１２上に搭載する他の種類
の半導体素子を用いた半導体パッケージにも本発明を適
用することができる。In the above embodiment, a semiconductor laser element and a light receiving element mounted on the heat sink 21 are used as the semiconductor elements, but the present invention can also be applied to semiconductor packages using other types of semiconductor elements mounted on the resin base 12. The invention can be applied.
本実施例に示すように、本発明においては半導体素子が
その機能を発揮するのに必襄十分な気密性が得られ、パ
ッケージ１１の構成をできる限り簡略化し、製造工程を
少なくし、小型化とともにコストの低廉化を図っている
。As shown in this embodiment, in the present invention, airtightness that is absolutely sufficient for the semiconductor element to perform its functions can be obtained, and the structure of the package 11 can be simplified as much as possible, the manufacturing process can be reduced, and the size can be reduced. At the same time, we are working to reduce costs.
（発明の効果）
本発明の半導体パッケージはこのように構成され作用す
るものであるから、簡単な構成により半導体素子を所要
の気密性を有するパッケージに収容することができ、組
立も容易で、高価な材料が不要であり、部品点数も少な
く小型化でき、コストも低廉となる等の効果を奏する。(Effects of the Invention) Since the semiconductor package of the present invention is configured and operates in this manner, a semiconductor element can be housed in a package having the required airtightness with a simple configuration, and assembly is easy and inexpensive. It has the following advantages: no special materials are required, the number of parts is small, the size can be reduced, and the cost is low.
第１図は本発明の半導体パッケージの一実施例を示す１
１１％側面図、第２図は従来例を示す縦断側面図である
。
１１・・・パッケージ、１２・・・樹脂基体、１３・・
・キャップ、１４・・・光透過板、１５・・・発光素子
、１６・・・受光素子、１７・・・リード、１８・・・
グランド部材、１９・・・金属細線、２０・・・樹脂接
着剤、２１・・・ヒートシンク。
図面
第１図
第２図
手続補正書
昭和６１年 ５月２７０
特許庁長官 宇 賀 道 部 殿
１、事件の表示
ミμ導体パッケージ
３、補止をする者
本件との関係 特許出願人
４、代理人
６．３ｉ＠正により増加する発明の数
７、補正の対象
明細書および図面
°°・２・′々・−ン
８、補正の内容
ｌ）明細書第３頁第１８行目の「アイレット２に」を「
アイレット２と」と補正する。
２）明細書第３頁第１８行目〜第１９行目の「リード９
を」を「リード９の」と補正する。
３）明！ｆｆ苫第６頁第９行目の「第１図に示すような
」を「第２図に示すような」と補正する。
４）明細書第８頁第１９行目の「りん青銅等を」を「銅
、銅合金等を」と補正する。
５）明細書第９頁第２行目〜第３行目の「一体化成形す
る」を「一体成形」と補正する。
６）図面の第２図を別紙の通り補正する。FIG. 1 shows an embodiment of the semiconductor package of the present invention.
11% side view, and FIG. 2 is a longitudinal sectional side view showing a conventional example. 11... Package, 12... Resin base, 13...
- Cap, 14... Light transmitting plate, 15... Light emitting element, 16... Light receiving element, 17... Lead, 18...
Ground member, 19... Metal thin wire, 20... Resin adhesive, 21... Heat sink. Drawings Figure 1 Figure 2 Procedural Amendment May 1986 270 Commissioner of the Patent Office Michibe Uga 1, Indication of the case Micro-conductor package 3, Person making the amendment Relationship to the case Patent applicant 4, Agent Person 6.3i @ Number of inventions increased due to correction 7, Description and drawings subject to amendment 8, Contents of amendment 1) "Eyelet" on page 3, line 18 of the specification 2” to “
"Eyelet 2" and corrected. 2) “Lead 9” on page 3, line 18 to line 19 of the specification
Correct ``to'' to ``lead 9's''. 3) Ming! ff Toma, page 6, line 9, "as shown in FIG. 1" is corrected to "as shown in FIG. 2." 4) On page 8, line 19 of the specification, "phosphor bronze, etc." is amended to "copper, copper alloy, etc." 5) "To be integrally molded" in the second to third lines of page 9 of the specification is corrected to "integral molding." 6) Correct Figure 2 of the drawings as shown in the attached sheet.
Claims (1)
るリードが一体に樹脂モールドされた樹脂基体と、前記
半導体素子とリードをワイヤボンディングした後に前記
半導体素子を密閉する蓋部材とを有する半導体パッケー
ジ。 ２）リードはアルミニウムから成ることを特徴とする特
許請求の範囲第１項記載の半導体パッケージ。 ３）半導体素子は発光素子からなり、蓋部材は光透過部
を有することを特徴とする特許請求の範囲第１項記載の
半導体パッケージ。 ４）発光素子が取付けられるヒートシンクを樹脂基体と
一体に樹脂モールドしたことを特徴とする特許請求の範
囲第３項記載の半導体パッケージ。[Scope of Claims] 1) A resin base in which a semiconductor element and a lead connected by wire bonding are integrally resin-molded, and a lid member that seals the semiconductor element after wire bonding the semiconductor element and the lead. A semiconductor package with 2) The semiconductor package according to claim 1, wherein the leads are made of aluminum. 3) The semiconductor package according to claim 1, wherein the semiconductor element is a light emitting element, and the lid member has a light transmitting part. 4) The semiconductor package according to claim 3, wherein the heat sink to which the light emitting element is attached is resin-molded integrally with the resin base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61095795A JPH0797611B2 (en) | 1986-04-24 | 1986-04-24 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61095795A JPH0797611B2 (en) | 1986-04-24 | 1986-04-24 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62252154A true JPS62252154A (en) | 1987-11-02 |
| JPH0797611B2 JPH0797611B2 (en) | 1995-10-18 |
Family
ID=14147378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61095795A Expired - Fee Related JPH0797611B2 (en) | 1986-04-24 | 1986-04-24 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0797611B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5838703A (en) * | 1996-09-30 | 1998-11-17 | Motorola, Inc. | Semiconductor laser package with power monitoring system and optical element |
| US7061949B1 (en) | 2002-08-16 | 2006-06-13 | Jds Uniphase Corporation | Methods, apparatus, and systems with semiconductor laser packaging for high modulation bandwidth |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6088552U (en) * | 1983-11-21 | 1985-06-18 | 株式会社精工舎 | Packages such as IC |
| JPS6293976A (en) * | 1985-10-21 | 1987-04-30 | Seiko Epson Corp | Resin sealed solid state image sensor |
| JPS62180949U (en) * | 1986-05-08 | 1987-11-17 |
-
1986
- 1986-04-24 JP JP61095795A patent/JPH0797611B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6088552U (en) * | 1983-11-21 | 1985-06-18 | 株式会社精工舎 | Packages such as IC |
| JPS6293976A (en) * | 1985-10-21 | 1987-04-30 | Seiko Epson Corp | Resin sealed solid state image sensor |
| JPS62180949U (en) * | 1986-05-08 | 1987-11-17 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5838703A (en) * | 1996-09-30 | 1998-11-17 | Motorola, Inc. | Semiconductor laser package with power monitoring system and optical element |
| US7061949B1 (en) | 2002-08-16 | 2006-06-13 | Jds Uniphase Corporation | Methods, apparatus, and systems with semiconductor laser packaging for high modulation bandwidth |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0797611B2 (en) | 1995-10-18 |
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