JPS62251720A - Production of liquid crystal element - Google Patents

Abstract

PURPOSE:To obtain the titled element having a high reliability with high efficiency in the production step by treating an orientation film composed of an obliquely deposited film of an inorg. substance such as SiO, etc., with a high temp. steam. CONSTITUTION:Transparent electrodes 3, 4 which have a prescribed shape and made of NESA film are mounted on each confronting surfaces of the substrates 1, 2. The orientation films 7, 8 are formed by depositing SiO, at a depositing angle of 85 deg., on the substrates 1, 2 formed the electrodes 3, 4 thereon respectively, and subsequently the obtd. substrates 1, 2 are treated with the high temp. steam allowing to settle it in the atmosphere of 80 deg.C and 95% humidity, followed by inserted the liquid crystal 9 between the substrates 1 and 2, and then sealed the inlet for sealing to form the titled element 10. Thus, by treating the orientation film obliquely deposited the inorg. substance such as SiO thereon with the high temp. steam to complete a reaction of SiOx of the orientation film and water, the titled element having a stable orientation film and a good reliability and for a long shelf life, without affecting to water is obtd.

Description

Detailed Description of the Invention (Objective of the Invention) (Industrial Field of Application) The present invention relates to a liquid crystal element using a diagonal F+5 film in an arrangement til I vaguely. This article relates to a manufacturing method.

(Prior art) Liquid crystal elements are used in displays for personal computers, including displays such as arm t+, 'r; xi, and electric 1μ.
- Used in a wide range of electro-optical devices such as optical discs.

In a liquid crystal element, as a means of horizontal alignment processing to align the long axis direction of liquid crystal molecules parallel to the substrate surface,
Pour the SiO Hideki object diagonally against the board surface.
The Orthogonal Swallow 4 method is used to form an orthogonal evaporated film, and PV is applied to the substrate surface.
A) A rubbing method is known in which a thin film of polyimide or the like is formed and the surface of this film is rubbed in one direction with a polishing agent or the like.

The rubbing method has a large display area that accommodates manufacturing = 1 stroke.2
6. Snow has the advantage that it can be easily applied, but the angle between the long axis direction of the liquid crystal molecules and the plane of the plate (pull angle) is usually about 2 to 31 degrees. The disadvantage is that it is difficult to control and is difficult to control. On the other hand, with the oblique method, the manufacturing cost is higher than the maggot method, but
Vacuum layer, swallow hexagonal polishing, thermal adhesion speed and thickness, etc.
・Yes, it is possible to increase the display area by adding 1 Tsubame defense.

(Problems that the invention is trying to solve) However, in a liquid crystal element that uses an indispensable orthogonal four-layer film as an alignment film, an accelerated reliability test (life test at high temperature and in a wet melon)
Air bubbles are generated in the process, and the alignment is also deteriorated, resulting in lower reliability compared to the rubbing method. These bubbles are caused by moisture existing in the liquid crystal, moisture forming on the substrate surface, or moisture entering from outside the cell. (It is thought that the 41:1 film reacts with the liquid and its composition changes, resulting in the formation of a gaseous reaction by-product.

This is especially true if you put a J: seal on the 47-donomono. For example, y! 1 (When SiO is used as a motive material, a thin film in the form of 5iOX (1≦X≦2) is formed on the substrate 41, but after filling the cell with liquid crystal, there is Reacts with incoming moisture and generates gas.

As a method for improving the alignment performance of a liquid crystal element using SiO as an alignment film, Japanese Patent Application Laid-Open No. 141651/1983 describes a method for improving the alignment performance of a liquid crystal element using SiO as an alignment film.
200 to 500 in an atmosphere containing oxygen after O film formation.
``C temperature - (for more than 20 minutes, 1 cry heat treatment 1!
Discloses a method of oxidizing an O film. But this/)
When a liquid crystal element was manufactured using the method, the heat treatment temperature was 400℃.
At temperatures below ℃, bubbles were generated in accelerated reliability tests. on the other hand,
If heat treatment is performed at a temperature of 400° C. or higher, problems such as deterioration of the electrode material and deformation of the substrate itself due to the high temperature may occur, and workability may deteriorate.

For this reason, heat treatment at 100° C. or higher is not practical.

Therefore, this invention aims to provide a highly reliable liquid crystal element with high dB pull efficiency compared to nA fabrication.
1 [Article 114 of the invention] (Means for solving the problems) The method for manufacturing a liquid crystal element of this invention includes subjecting an alignment film made of a 'J:81-directionally deposited film of an inorganic material such as SiO to hot water steam treatment. It is characterized by

(Action) SiO etc. 3! The alignment film consisting of 7 orthogonally aged films of the tt machine is subjected to hot water steam treatment. If it becomes unpopular, its reliability will be affected. Note 1. :::j Hot steam treatment is)j Cucumber 70℃
As described above, it is preferable to hold the plate in an atmosphere with a humidity of 80% or more for one hour or more, preferably for two hours or more.

Moreover, if heat treatment is performed from 200° C. to 400TC at +′+i7 of this high-temperature steam treatment, the alignment film will be further stabilized. However, if the temperature of heat treatment is less than 200℃, there is almost no effect of heat treatment, and if the temperature is higher than 400℃, there will be no effect.
It is unsuitable because the high resistance of the plate E and the plate itself will be deformed due to high temperature.
! ! When Tanuki no Shun is surface treated with a silane coupling agent, the chemical stability of the alignment film surface is further strengthened.

(Example) Example 1 FIG. 1 shows a liquid crystal element according to an example of the present invention. Two substrates 1 and 2 made of transparent glass are placed facing each other. Electrodes 3 and 4 are formed in the λ·1 direction of each substrate, and alignment films 7 and 8 made of SiO are coated on the electrodes 3 and 4, respectively.

A liquid crystal 9 is sandwiched between these J plates 1 and 2 in contact with an alignment film 7.8 to form a liquid crystal element 10.

Hereinafter, the method for manufacturing this liquid crystal crystal will be explained.

j1! At each end of plates 1 and 2, 1) with a membrane (,,
3. Transparent electrode with a predetermined shape. ．． 1 to 1. C-J.

Den d423.

4 was formed on the substrate 1.2 with 7 two angles 851 eclipses and 3i
The alignment films 7 and 8 were formed using the method of diagonally moving 0 forward to a thickness of 60 mm. Normal direction 11 of the substrate 1 and Tsubameya direction 12
It was specified by which four mezu horn α. 13 in the figure is an evaporation source.

After this, the alignment film 7. Formed ε3! J board'1,2 to F
uA Iu 80℃, i! a! Ii 95','1
0 (1) In the atmosphere 11. '1 Kaisei r;a L/
-c high temperature steam treatment. Next, the alignment films 7 and 8 are made to face each other, and the peripheries of the substrates 1 and 2 are pasted together with a sealant on the right side, although not shown, with a gap of 7 μIll between the substrates 1 and 2. Ta. After installing Z L I-1565 (Merck formal wear) as the liquid crystal 9 between these substrates 1 and 2,
Seal 1iI person [1 with ultraviolet curing resin and liquid crystal water 10
was formed.

Test the above liquid crystal element by exposing it to an atmosphere of 80℃ and 95% humidity! A1↑4 When I did the accelerated test, it was 15011 after the test. No disturbance of the orientation was observed after 211% of the time elapsed.
~Questions and 5 ++, A liquid crystal element was produced as between 1 and 5.

After this, when I performed the Ihai I acceleration test, the results were 200.30011. No generation of bubbles or disturbance of orientation was observed even after one hour had passed.

Example 3 The substrate on which the alignment film was formed in Example 1 was heated at a temperature of 250°C for 60 minutes.
After heat treatment for minutes, temperature 80℃, 95%
The sample was left in an atmosphere for 2 hours to undergo high-temperature steam treatment.

Thereafter, a liquid crystal element was produced and an accelerated reliability test was performed (no bubbles or alignment disturbances were observed even after 400 hours had passed).

Example 4 In Example 2, the high temperature steam treatment was carried out at 211. The plate was opened for 1 minute and the plate was immersed in a 0.5vol 1% aqueous solution of silane coupling agent S 1-1-6020 (Toshi Silicone Ceremony) and dried to perform surface treatment. Thereafter, a liquid crystal element was prepared and an accelerated reliability test was performed, and no bubbles or alignment disturbances were observed after 500 hours.

Example 5 The substrate subjected to heat treatment J3J and high-temperature steam treatment in Example 3 was subjected to surface treatment with the silane coupling agent used in Example 3. Thereafter, a liquid crystal element was manufactured and an accelerated reliability test was performed, and no bubbles were observed or alignment disturbances were observed after 700 hours. It goes without saying that the substrate is dried at the end of the high-temperature steam treatment [13] and the surface treatment with the silane coupling agent in Examples 1 to 5.

Comparative Example 1 A liquid crystal element was prepared using the substrates used in Examples 1 to 5 without subjecting it to high-temperature steam treatment, and an accelerated property test was conducted. Bubbles are generated between '1/lu Comparative Example 2 The substrate on which the oriented IQ was formed in Example 1 was heated in air at a temperature of 100'''C, 200℃, 300℃, 400℃, 500℃.
A liquid crystal element was fabricated by heat treatment at ℃C for 60 minutes. When we conducted an accelerated reliability test, we found that the liquid crystal element heated at 100 degrees Celsius was rated at 301. %, bubbles were generated in other liquid crystal devices after 50 to 70 hours.

(Effects of the Invention) According to the present invention, inorganic substances such as SiO
By treating the oriented film (obliquely steamed) with high-temperature steam to avoid the reaction between the SiOx of the oriented film and water,
The alignment film becomes stable and is no longer affected by water, making it reliable.
It is possible to create a liquid crystal element with good performance and no problems.

In the above-mentioned example, the case of C3iO is assumed to be an orthogonal stone, and the inorganic motion of 1sio, △11:3 etc. is used. I won't say C until I have something good to say. In addition, as a silane coupling agent for surface treatment performed after high-temperature steam treatment) in the case of Nominosilane) 'f-/S: However, other silane coupling barriers that serve as alignment treatment agents for water and other types of horizontal alignment treatment 9 fruits with good drug string are P/.

[Brief explanation of drawings]

FIG. 1 shows a liquid crystal water crystal according to an embodiment of the present invention.
Eye Jl! Figure, Figure 2 (Explain 1 steam, 1 angle, 1 barb. There is Figure C. 1.2...), I: Provisional 3. /1... Electric (I
l's 7, E also... orientation 11'A 9...) 1
Evening crystal 10... Liquid crystal element 11... Substrate normal direction 12... Corresponding direction 13... Evaporation source agent ゛i', ]! l! Ten Rules Kikkomi I Can Shu Iridan Sennin 1st Figure 2

Claims (5)

[Claims] (1) A step of forming an alignment film by vapor-depositing an inorganic substance on a substrate with an electrode formed on the surface from an oblique direction to the surface of the substrate, and a step of treating the alignment film with high-temperature steam after that. A method for manufacturing a liquid crystal element, characterized by the following. (2) The high-temperature steam treatment step includes a step of holding the substrate in an atmosphere with a temperature of 70° C. or more and 100° C. or less and a humidity of 80% or more and less than 100%. A method for manufacturing a liquid crystal element as described in Section 1. (3) Between the high-temperature steam treatment step and the step of forming the alignment film, there is a step of heat-treating the substrate at a temperature of 200° C. or more and 400° C. or less. A method for manufacturing a liquid crystal element according to item 1. (4) The liquid crystal element according to claim 1 or 3, wherein the surface of the alignment film is surface-treated with a silane coupling agent after the high-temperature steam treatment step. Production method. (5) The method for manufacturing a liquid crystal element according to claim 1, wherein the step of forming the alignment film includes a step of obliquely depositing SiO.