JPS62251720A - Production of liquid crystal element - Google Patents
Production of liquid crystal elementInfo
- Publication number
- JPS62251720A JPS62251720A JP9467886A JP9467886A JPS62251720A JP S62251720 A JPS62251720 A JP S62251720A JP 9467886 A JP9467886 A JP 9467886A JP 9467886 A JP9467886 A JP 9467886A JP S62251720 A JPS62251720 A JP S62251720A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- crystal element
- film
- substrates
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000126 substance Substances 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims abstract 4
- 238000000034 method Methods 0.000 claims description 18
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 25
- 238000010438 heat treatment Methods 0.000 description 10
- 238000004381 surface treatment Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- 240000008067 Cucumis sativus Species 0.000 description 1
- 235000010799 Cucumis sativus var sativus Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133734—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by obliquely evaporated films, e.g. Si or SiO2 films
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
(発明の目的)
(産業上の利用分野)
本発明は配置til I漠にjjj(は物の斜方F+看
5膜を用いた液晶素子に関し、′1j1に液晶素子の製
造方法に関するしのである。Detailed Description of the Invention (Objective of the Invention) (Industrial Field of Application) The present invention relates to a liquid crystal element using a diagonal F+5 film in an arrangement til I vaguely. This article relates to a manufacturing method.
(従来の技術)
液晶素子は、腕t+、’r ;xi、電1μをはじめと
してパーソナルコンピュータ用ディスプレイ、ボウツ1
〜う゛レビなど幅広く電気光学装量に利用されている。(Prior art) Liquid crystal elements are used in displays for personal computers, including displays such as arm t+, 'r; xi, and electric 1μ.
- Used in a wide range of electro-optical devices such as optical discs.
一段に液晶素子において、液晶分子の長軸方向を基板面
に対して平行に配向させる水平配向処理の手段として、
基板面に対してSiO秀の烈機物を斜め方向から恭ン1
して斜方蒸若膜を形成する斜方燕4法と、基板面にPV
Aヤ)ポリイミド等の薄膜を形成し、この19膜面をイ
li等で一方向に摩家するラビング法とが知られている
。In a liquid crystal element, as a means of horizontal alignment processing to align the long axis direction of liquid crystal molecules parallel to the substrate surface,
Pour the SiO Hideki object diagonally against the board surface.
The Orthogonal Swallow 4 method is used to form an orthogonal evaporated film, and PV is applied to the substrate surface.
A) A rubbing method is known in which a thin film of polyimide or the like is formed and the surface of this film is rubbed in one direction with a polishing agent or the like.
ラビング法は、製造=1ストが宥く表示面積の大さく2
6のにし容易に適用てさ′る雪の長所があるが、液晶分
子の長軸方向と桔板面とのむず角(プル1−角)が通常
2〜31食程1身程1良しか得られず、これを制御する
ことか困難であるという欠点を右している。一方斜方然
ン゛、法は、製造二1ストはうじレグ法に比べ高いが、
真空層、燕6角磨、熱着速度おJ、び燕る膜厚等の燕盾
条(’IにJ、つてプル1〜角を制御することが可能(
・あり、燕ン1装防を上人することにより表示面積の大
型化も可能である。The rubbing method has a large display area that accommodates manufacturing = 1 stroke.2
6. Snow has the advantage that it can be easily applied, but the angle between the long axis direction of the liquid crystal molecules and the plane of the plate (pull angle) is usually about 2 to 31 degrees. The disadvantage is that it is difficult to control and is difficult to control. On the other hand, with the oblique method, the manufacturing cost is higher than the maggot method, but
Vacuum layer, swallow hexagonal polishing, thermal adhesion speed and thickness, etc.
・Yes, it is possible to increase the display area by adding 1 Tsubame defense.
(発明が解決しにうとする問題点)
しかし、無別物の斜方然4膜を配向膜とする液晶素子で
は、信頼性の加速試験(高温・畠湿瓜中での寿命試験)
中に、気泡が発生し、また配向も悪化し、ラビング法に
比べて信頼性におどる。この気泡は、液晶中に存在する
水分、基板表面にイ」るしCいる水分あるいはセル外部
から進入して来る水分の影響により、y!((機動から
41:る1ミ1方煎る膜が反応し、組成が変化しそれに
伴4工う反応副生成物の気体ににるものと考えられる。(Problems that the invention is trying to solve) However, in a liquid crystal element that uses an indispensable orthogonal four-layer film as an alignment film, an accelerated reliability test (life test at high temperature and in a wet melon)
Air bubbles are generated in the process, and the alignment is also deteriorated, resulting in lower reliability compared to the rubbing method. These bubbles are caused by moisture existing in the liquid crystal, moisture forming on the substrate surface, or moisture entering from outside the cell. (It is thought that the 41:1 film reacts with the liquid and its composition changes, resulting in the formation of a gaseous reaction by-product.
これは特に47殿物にJ:るシールをした場合に顕署と
なる。例えばy!1(機動としてSiOを燕石した場合
、基板41ニには5iOX(1≦X≦2)の形で薄膜が
形成されるが、セルに液晶を封入した後、液晶中、基板
表面あるいは外部から進入する水分により反応し、気体
を発生する。This is especially true if you put a J: seal on the 47-donomono. For example, y! 1 (When SiO is used as a motive material, a thin film in the form of 5iOX (1≦X≦2) is formed on the substrate 41, but after filling the cell with liquid crystal, there is Reacts with incoming moisture and generates gas.
SiOを配向膜とした液晶素子の配向性能を良くηる方
法として、特開昭52−141651号公報では、Si
O膜形成後に酸素をもする雰囲気中で、200〜500
”Cの温度に−(20分以上、1叫熱処1!VシてSi
O膜を酸化させる方法を開示している。しかしこの/)
法で、液晶素子を作製したところ、熱処理温度が400
℃以下では、信頼性加速試験で気泡が発生した。一方、
400℃以上で加熱処理すると、電極材料の劣化や、基
板自体が高温にJ:り変形づるなどの゛問題が発生した
り、また作業性が悪くなる。As a method for improving the alignment performance of a liquid crystal element using SiO as an alignment film, Japanese Patent Application Laid-Open No. 141651/1983 describes a method for improving the alignment performance of a liquid crystal element using SiO as an alignment film.
200 to 500 in an atmosphere containing oxygen after O film formation.
``C temperature - (for more than 20 minutes, 1 cry heat treatment 1!
Discloses a method of oxidizing an O film. But this/)
When a liquid crystal element was manufactured using the method, the heat treatment temperature was 400℃.
At temperatures below ℃, bubbles were generated in accelerated reliability tests. on the other hand,
If heat treatment is performed at a temperature of 400° C. or higher, problems such as deterioration of the electrode material and deformation of the substrate itself due to the high temperature may occur, and workability may deteriorate.
このため/100℃以上の加熱処理は実用的でない。For this reason, heat treatment at 100° C. or higher is not practical.
従って、この発明は、nA造上程にdBプる能率が高く
、信頼性の高い液晶素子を得ることを「l的とリ−る、
1
〔発明の114成〕
(問題点を解決りるための手段)
この発明の液晶素子の製造方法は、SiO等の無機物の
′J:81方蒸着膜からなる配向膜を出湯水蒸気処理す
ることを特徴とりる。Therefore, this invention aims to provide a highly reliable liquid crystal element with high dB pull efficiency compared to nA fabrication.
1 [Article 114 of the invention] (Means for solving the problems) The method for manufacturing a liquid crystal element of this invention includes subjecting an alignment film made of a 'J:81-directionally deposited film of an inorganic material such as SiO to hot water steam treatment. It is characterized by
(作 用)
SiO等3!tt機物の斜方熟ン7膜からなる配向膜を
出湯水蒸気処理することC1予め配向膜の無機物と水と
の反応が終了し、処Jj[後は配向膜が衣定となり水に
よる影響を受りなくなって信頼性が′良く艮)j命とな
る。なお1.:::j温水蒸気処理は、)jシ瓜70℃
以上、湿度80%以上の雰囲気中に1時間以−し、好ま
しくは2時間以上配向膜を形成した導、(板を保持する
ことが好ましい。(Action) SiO etc. 3! The alignment film consisting of 7 orthogonally aged films of the tt machine is subjected to hot water steam treatment. If it becomes unpopular, its reliability will be affected. Note 1. :::j Hot steam treatment is)j Cucumber 70℃
As described above, it is preferable to hold the plate in an atmosphere with a humidity of 80% or more for one hour or more, preferably for two hours or more.
また、この高温水蒸気処理の+’+i7に200℃から
400TCまでの熱処理を行えば、配向膜がより安定化
される。、なお、熱処理の温度は、200℃未満では熱
処理の効果がほとんどなく、また400℃以上では電4
へ祠Eの高抵抗化やL(板自体が高温にJ、り変形して
しまうため不適当である。さらに、It1温水蒸気51
!!狸の俊にシランカップリング剤で表面処理を行うと
、配向膜表面の化学的安定性がより一層強化される。Moreover, if heat treatment is performed from 200° C. to 400TC at +′+i7 of this high-temperature steam treatment, the alignment film will be further stabilized. However, if the temperature of heat treatment is less than 200℃, there is almost no effect of heat treatment, and if the temperature is higher than 400℃, there will be no effect.
It is unsuitable because the high resistance of the plate E and the plate itself will be deformed due to high temperature.
! ! When Tanuki no Shun is surface treated with a silane coupling agent, the chemical stability of the alignment film surface is further strengthened.
(実施例)
実施例1
第1図は本発明の一実施例による液晶素子を示す。透明
ガラスでできた2枚の基板1,2が相対向さUられてい
る。各基板のλ・1向而にはそれぞれ電極3.4が形成
8れ、電極3,4上にはSiOを斜1j蒸る”した配向
膜7,8が被ン)されている、。(Example) Example 1 FIG. 1 shows a liquid crystal element according to an example of the present invention. Two substrates 1 and 2 made of transparent glass are placed facing each other. Electrodes 3 and 4 are formed in the λ·1 direction of each substrate, and alignment films 7 and 8 made of SiO are coated on the electrodes 3 and 4, respectively.
そしてこれら)J板1,2聞に液晶9が配向膜7゜8に
接して挟持されて、液晶素子10が形成され゛(いる。A liquid crystal 9 is sandwiched between these J plates 1 and 2 in contact with an alignment film 7.8 to form a liquid crystal element 10.
以ド、この液晶九子の製造方法につい−C説明り−る。Hereinafter, the method for manufacturing this liquid crystal crystal will be explained.
j1!板1,2のえ1向而それぞれにネ1)膜で(、、
Xだ所定形状の透明な電極3..1を1.々C−Jた。j1! At each end of plates 1 and 2, 1) with a membrane (,,
3. Transparent electrode with a predetermined shape. .. 1 to 1. C-J.
電d423 。Den d423.
4を形成した基板1.2上に然7二角度851食で3i
0を斜方前る法を用い−(60人の厚さに燕谷し、配向
膜7,8を形成した。、ここで然着角[良は第2図に示
−J’J、うに基板1而の法線方向11と燕谷方向12
どの4メず角瓜αで規定した。図中13は蒸発源である
。4 was formed on the substrate 1.2 with 7 two angles 851 eclipses and 3i
The alignment films 7 and 8 were formed using the method of diagonally moving 0 forward to a thickness of 60 mm. Normal direction 11 of the substrate 1 and Tsubameya direction 12
It was specified by which four mezu horn α. 13 in the figure is an evaporation source.
この後、配向膜7.ε3を形成した!J板′1,2をF
uA Iu 80℃、i!a! Ii 95 ’、’1
0 (1) 雰囲気中ニ11.’1 開成r;a L/
−c高温水蒸気処理した。次に、配向膜7,8が対向
するようにし−C基板1,2を7μIllの間隔を持っ
て図示してはいないが、基板1,2の周縁を右はシール
剤を用いて貼合わけた。これら基板1,2間に液晶9と
してZ L I −1565(メルク礼装)を用人後、
紫外線硬化樹脂で1iI人[1を封止して液晶水子10
を形成した。After this, the alignment film 7. Formed ε3! J board'1,2 to F
uA Iu 80℃, i! a! Ii 95','1
0 (1) In the atmosphere 11. '1 Kaisei r;a L/
-c high temperature steam treatment. Next, the alignment films 7 and 8 are made to face each other, and the peripheries of the substrates 1 and 2 are pasted together with a sealant on the right side, although not shown, with a gap of 7 μIll between the substrates 1 and 2. Ta. After installing Z L I-1565 (Merck formal wear) as the liquid crystal 9 between these substrates 1 and 2,
Seal 1iI person [1 with ultraviolet curing resin and liquid crystal water 10
was formed.
以上の液晶素子をiJ哀80℃、湿度95%の雰囲気中
に放1ごjして信!イ1↑4加速試験を行ったところ試
験聞姶後15011.%聞経過してし気泡の発生ヤ]配
向の乱れは認められなかった1゜
実施例2
実施例1C行なった高温水蒸気処理の時間を、211、
〜問及び5 ++、1間として、液晶素子を作製した。Test the above liquid crystal element by exposing it to an atmosphere of 80℃ and 95% humidity! A1↑4 When I did the accelerated test, it was 15011 after the test. No disturbance of the orientation was observed after 211% of the time elapsed.
~Questions and 5 ++, A liquid crystal element was produced as between 1 and 5.
この後、イハイI性加速誠験を行ったところ、ぞれぞれ
200.30011.’1間経過しても気泡の発生や配
向の乱れは認められ%かった。After this, when I performed the Ihai I acceleration test, the results were 200.30011. No generation of bubbles or disturbance of orientation was observed even after one hour had passed.
実施例3
実施例1で配向膜を形成した基板を温度250℃で60
分の熱処理を施こした後、温度80℃,九1j食95%
の雰囲気中に2時間放置して高温水蒸気処理した。Example 3 The substrate on which the alignment film was formed in Example 1 was heated at a temperature of 250°C for 60 minutes.
After heat treatment for minutes, temperature 80℃, 95%
The sample was left in an atmosphere for 2 hours to undergo high-temperature steam treatment.
この後、液晶素子を作製し信頼性加速試験を(iっだと
ころ400時間経過しても気泡の発生や配向の乱れは認
められなかった。Thereafter, a liquid crystal element was produced and an accelerated reliability test was performed (no bubbles or alignment disturbances were observed even after 400 hours had passed).
実施例4
実施例2で高温水蒸気処理を211.’1間開口したり
板をシランカップリング剤S l−1−6020(東し
シリコーン礼装) 0.5vo1%水溶液に浸漬、乾
燥して表面処理した。この後液晶素子を作製し、信4イ
1性加速試験を行ったところ、500時間経過してし気
泡の発生や配向の乱れは認められなかった。Example 4 In Example 2, the high temperature steam treatment was carried out at 211. The plate was opened for 1 minute and the plate was immersed in a 0.5vol 1% aqueous solution of silane coupling agent S 1-1-6020 (Toshi Silicone Ceremony) and dried to perform surface treatment. Thereafter, a liquid crystal element was prepared and an accelerated reliability test was performed, and no bubbles or alignment disturbances were observed after 500 hours.
実施例5
実施例3で熱処理J3J、び高温水蒸気処理を施こした
基板を実施例3で用いたシランカップリング剤による表
面処理を施こした。この後、液晶素子を作製し、信頼性
加速試験を行ったところ、700時間経過してし気泡の
発生や配向の乱れは認められイヱかった。なJ)、実施
例1〜5での高温水蒸気処理【13よびシランカップリ
ング剤ににる表面処理の終りに基板を乾燥ざUることは
ハうまでもない。Example 5 The substrate subjected to heat treatment J3J and high-temperature steam treatment in Example 3 was subjected to surface treatment with the silane coupling agent used in Example 3. Thereafter, a liquid crystal element was manufactured and an accelerated reliability test was performed, and no bubbles were observed or alignment disturbances were observed after 700 hours. It goes without saying that the substrate is dried at the end of the high-temperature steam treatment [13] and the surface treatment with the silane coupling agent in Examples 1 to 5.
比較例1
実施例1〜5で用いた基板を高温水蒸気処理を施こさず
に液晶素子を作製し、仁1イ1性加速試験を行ったとこ
ろ、いり゛れら30・〜7011.’1間で気泡が発生
し /l−u
比較例2
実施例1で配向;IQを形成した基板を、空気中で温度
100’″C,200℃、300℃,400℃,500
℃C60分聞の熱処理を施し液晶素子を作製した。信頼
性加速試験を行ったところ、熱処理温石100℃の液晶
素子は301.%間、他の液晶素子でも50〜70時間
で気泡が発生した。Comparative Example 1 A liquid crystal element was prepared using the substrates used in Examples 1 to 5 without subjecting it to high-temperature steam treatment, and an accelerated property test was conducted. Bubbles are generated between '1/lu Comparative Example 2 The substrate on which the oriented IQ was formed in Example 1 was heated in air at a temperature of 100'''C, 200℃, 300℃, 400℃, 500℃.
A liquid crystal element was fabricated by heat treatment at ℃C for 60 minutes. When we conducted an accelerated reliability test, we found that the liquid crystal element heated at 100 degrees Celsius was rated at 301. %, bubbles were generated in other liquid crystal devices after 50 to 70 hours.
(発明の効果)
以上のJ、うに本発明によれば、無機物、例えばSiO
を斜方蒸ン)シた配向膜を高温水蒸気で処理して予め配
向膜のSiOxと水との反応を終了さけることにより、
配向膜が°友定し、水の影響を受りなくなり、信lfl
性の良い艮ノー命の液晶素子を1iIることかできる。(Effects of the Invention) According to the present invention, inorganic substances such as SiO
By treating the oriented film (obliquely steamed) with high-temperature steam to avoid the reaction between the SiOx of the oriented film and water,
The alignment film becomes stable and is no longer affected by water, making it reliable.
It is possible to create a liquid crystal element with good performance and no problems.
ト述の実施例では、斜方黒石づる無別物としC3iOの
場合を)ホべたが蕉ン1+A利に関わることイにく均一
な配向を示1sio 、△11:3等池の無機動を用
いてし良いことは言うまCしない。また高温水蒸気処理
の後に行う表面処理のシランカップリング剤として)ノ
ミノシランの場合を)’f−/S:だが、水゛V配向処
理剤となる他のシランカップリングバリヤ)他種の水平
配向処理剤ひも良い9ノ果がP/られる。In the above-mentioned example, the case of C3iO is assumed to be an orthogonal stone, and the inorganic motion of 1sio, △11:3 etc. is used. I won't say C until I have something good to say. In addition, as a silane coupling agent for surface treatment performed after high-temperature steam treatment) in the case of Nominosilane) 'f-/S: However, other silane coupling barriers that serve as alignment treatment agents for water and other types of horizontal alignment treatment 9 fruits with good drug string are P/.
第1図は本発明の一実施例による液晶水子を示す1:;
目Jl!図、第2図(,1蒸ン°1角1艮を説明りろ図
Cある。。
1.2・・・)、I:仮 3./1・・・電(I
lズ7、Eも・・・配向11’A 9・・・)1
夕晶10・・・液晶素子 11・・・基板法線方
向12・・・然る方向 13・・・蒸発源代理人
ヅ゛i’、 ]!l!十 則 近 込i 缶周 入
団仙人
第 1 図
第2図FIG. 1 shows a liquid crystal water crystal according to an embodiment of the present invention.
Eye Jl! Figure, Figure 2 (Explain 1 steam, 1 angle, 1 barb. There is Figure C. 1.2...), I: Provisional 3. /1... Electric (I
l's 7, E also... orientation 11'A 9...) 1
Evening crystal 10... Liquid crystal element 11... Substrate normal direction 12... Corresponding direction 13... Evaporation source agent ゛i', ]! l! Ten Rules Kikkomi I Can Shu Iridan Sennin 1st Figure 2
Claims (5)
して斜め方向から無機物を蒸着して配向膜を形成する工
程と、この後前記配向膜を高温水蒸気で処理する工程と
を備えたことを特徴とする液晶素子の製造方法。(1) A step of forming an alignment film by vapor-depositing an inorganic substance on a substrate with an electrode formed on the surface from an oblique direction to the surface of the substrate, and a step of treating the alignment film with high-temperature steam after that. A method for manufacturing a liquid crystal element, characterized by the following.
100℃以下、かつ湿度80%以上100%未満の雰囲
気中に前記基板を保持する工程を含むことを特徴とする
特許請求の範囲第1項記載の液晶素子の製造方法。(2) The high-temperature steam treatment step includes a step of holding the substrate in an atmosphere with a temperature of 70° C. or more and 100° C. or less and a humidity of 80% or more and less than 100%. A method for manufacturing a liquid crystal element as described in Section 1.
する工程との間に、前記基板を200℃以上400℃以
下の温度で熱処理を行う工程を有することを特徴とする
特許請求の範囲第1項記載の液晶素子の製造方法。(3) Between the high-temperature steam treatment step and the step of forming the alignment film, there is a step of heat-treating the substrate at a temperature of 200° C. or more and 400° C. or less. A method for manufacturing a liquid crystal element according to item 1.
表面をシランカップリング剤で表面処理することを特徴
とする特許請求の範囲第1項または第3項のいずれかに
記載の液晶素子の製造方法。(4) The liquid crystal element according to claim 1 or 3, wherein the surface of the alignment film is surface-treated with a silane coupling agent after the high-temperature steam treatment step. Production method.
する工程を含むことを特徴とする特許請求の範囲第1項
記載の液晶素子の製造方法。(5) The method for manufacturing a liquid crystal element according to claim 1, wherein the step of forming the alignment film includes a step of obliquely depositing SiO.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9467886A JPS62251720A (en) | 1986-04-25 | 1986-04-25 | Production of liquid crystal element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9467886A JPS62251720A (en) | 1986-04-25 | 1986-04-25 | Production of liquid crystal element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62251720A true JPS62251720A (en) | 1987-11-02 |
Family
ID=14116875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9467886A Pending JPS62251720A (en) | 1986-04-25 | 1986-04-25 | Production of liquid crystal element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62251720A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6693694B2 (en) * | 1999-05-14 | 2004-02-17 | Koninklijke Philips Electronics N.V. | Electro-optic display device with reduced electrical asymmetry |
JP2007264624A (en) * | 2006-03-02 | 2007-10-11 | Canon Inc | Manufacturing method of liquid crystal panel, and surface treatment method of alignment film |
JP2007328100A (en) * | 2006-06-07 | 2007-12-20 | Citizen Miyota Co Ltd | Liquid crystal panel and method for manufacturing the same |
JP2010020255A (en) * | 2008-07-14 | 2010-01-28 | Seiko Epson Corp | Surface treatment device and surface treatment method |
JP2010024484A (en) * | 2008-07-17 | 2010-02-04 | Seiko Epson Corp | Surface treatment apparatus and surface treatment method |
US7675603B2 (en) | 2005-03-28 | 2010-03-09 | Seiko Epson Corporation | Seal structure, seal method, liquid crystal device, manufacturing method thereof, and projector |
JP2015022254A (en) * | 2013-07-23 | 2015-02-02 | セイコーエプソン株式会社 | Vapor deposition apparatus, and manufacturing method of liquid crystal device |
WO2021246113A1 (en) * | 2020-06-05 | 2021-12-09 | ソニーグループ株式会社 | Optical element, liquid crystal display device, and electronic apparatus |
-
1986
- 1986-04-25 JP JP9467886A patent/JPS62251720A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6693694B2 (en) * | 1999-05-14 | 2004-02-17 | Koninklijke Philips Electronics N.V. | Electro-optic display device with reduced electrical asymmetry |
US7675603B2 (en) | 2005-03-28 | 2010-03-09 | Seiko Epson Corporation | Seal structure, seal method, liquid crystal device, manufacturing method thereof, and projector |
JP2007264624A (en) * | 2006-03-02 | 2007-10-11 | Canon Inc | Manufacturing method of liquid crystal panel, and surface treatment method of alignment film |
JP2007328100A (en) * | 2006-06-07 | 2007-12-20 | Citizen Miyota Co Ltd | Liquid crystal panel and method for manufacturing the same |
JP2010020255A (en) * | 2008-07-14 | 2010-01-28 | Seiko Epson Corp | Surface treatment device and surface treatment method |
JP2010024484A (en) * | 2008-07-17 | 2010-02-04 | Seiko Epson Corp | Surface treatment apparatus and surface treatment method |
JP2015022254A (en) * | 2013-07-23 | 2015-02-02 | セイコーエプソン株式会社 | Vapor deposition apparatus, and manufacturing method of liquid crystal device |
WO2021246113A1 (en) * | 2020-06-05 | 2021-12-09 | ソニーグループ株式会社 | Optical element, liquid crystal display device, and electronic apparatus |
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