JPS62250719A - Semiconductor relay circuit - Google Patents

Semiconductor relay circuit

Info

Publication number
JPS62250719A
JPS62250719A JP9421886A JP9421886A JPS62250719A JP S62250719 A JPS62250719 A JP S62250719A JP 9421886 A JP9421886 A JP 9421886A JP 9421886 A JP9421886 A JP 9421886A JP S62250719 A JPS62250719 A JP S62250719A
Authority
JP
Japan
Prior art keywords
trq
turned
time
fetq
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9421886A
Other languages
Japanese (ja)
Other versions
JP2521663B2 (en
Inventor
Yukio Iitaka
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP9421886A priority Critical patent/JP2521663B2/en
Publication of JPS62250719A publication Critical patent/JPS62250719A/en
Application granted granted Critical
Publication of JP2521663B2 publication Critical patent/JP2521663B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE: To execute a quick switching by connecting the 2nd transistor in parallel with photodiode array and connecting a phototransistor between then so that the 2nd transistor can be turned off at the time of irradiating an optical signal and further connecting a resistance so that the 2nd transistor can be turned on at the time of blocking an optical signal.
CONSTITUTION: When an input current flows between input terminals I1 and I2, the gate potential of an output FETQ1 rises thanks to the actions of a light emitting diode L and the photodiode array D, and a phototransistor TrP is turned on. At that time, the resistance R is made significantly great, and a current flowing from the photodiode array D is made minimal. A voltage across the gate and source of the FETQ1 is quickly boosted to speed up turning-on. When the input current between the input terminals I1 and I2 comes to zero, a voltage coexisting across the drain and source of a TrQ2 makes its gate potential at the level the same as the drain potential of the TrQ2 through the resistance R, and the TrQ2 is turned on. The charge fo the output FETQ1 is speedily discnaraged through the TrQ2 to shorten the turning-off time.
COPYRIGHT: (C)1987,JPO&Japio
JP9421886A 1986-04-23 1986-04-23 Semiconductor relay circuit Expired - Lifetime JP2521663B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9421886A JP2521663B2 (en) 1986-04-23 1986-04-23 Semiconductor relay circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9421886A JP2521663B2 (en) 1986-04-23 1986-04-23 Semiconductor relay circuit

Publications (2)

Publication Number Publication Date
JPS62250719A true JPS62250719A (en) 1987-10-31
JP2521663B2 JP2521663B2 (en) 1996-08-07

Family

ID=14104174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9421886A Expired - Lifetime JP2521663B2 (en) 1986-04-23 1986-04-23 Semiconductor relay circuit

Country Status (1)

Country Link
JP (1) JP2521663B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6351681A (en) * 1986-08-20 1988-03-04 Agency Of Ind Science & Technol Semiconductor device
JPH02150076A (en) * 1988-11-30 1990-06-08 Sharp Corp Semiconductor device
JPH02222573A (en) * 1989-02-23 1990-09-05 Agency Of Ind Science & Technol Switching device
JPH06296128A (en) * 1993-04-07 1994-10-21 Murata Mach Ltd Power circuit
EP0692874A1 (en) * 1994-07-15 1996-01-17 Motorola, Inc. Power transistor with integrated turn-off circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054098A (en) * 1983-09-01 1985-03-28 Yokogawa Hokushin Electric 2-wire type transmission circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054098A (en) * 1983-09-01 1985-03-28 Yokogawa Hokushin Electric 2-wire type transmission circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6351681A (en) * 1986-08-20 1988-03-04 Agency Of Ind Science & Technol Semiconductor device
JPH02150076A (en) * 1988-11-30 1990-06-08 Sharp Corp Semiconductor device
JPH02222573A (en) * 1989-02-23 1990-09-05 Agency Of Ind Science & Technol Switching device
JPH06296128A (en) * 1993-04-07 1994-10-21 Murata Mach Ltd Power circuit
EP0692874A1 (en) * 1994-07-15 1996-01-17 Motorola, Inc. Power transistor with integrated turn-off circuit

Also Published As

Publication number Publication date
JP2521663B2 (en) 1996-08-07

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