JPS6224959B2 - - Google Patents

Info

Publication number
JPS6224959B2
JPS6224959B2 JP55169712A JP16971280A JPS6224959B2 JP S6224959 B2 JPS6224959 B2 JP S6224959B2 JP 55169712 A JP55169712 A JP 55169712A JP 16971280 A JP16971280 A JP 16971280A JP S6224959 B2 JPS6224959 B2 JP S6224959B2
Authority
JP
Japan
Prior art keywords
laser
pulse
laser beam
electrode
voltaic cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55169712A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5710272A (en
Inventor
Ai Rabatsutaa Jefuerii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BAANAADO BII KATSUTSU
Original Assignee
BAANAADO BII KATSUTSU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BAANAADO BII KATSUTSU filed Critical BAANAADO BII KATSUTSU
Publication of JPS5710272A publication Critical patent/JPS5710272A/ja
Publication of JPS6224959B2 publication Critical patent/JPS6224959B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/038—Electrodes, e.g. special shape, configuration or composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/038—Electrodes, e.g. special shape, configuration or composition
    • H01S3/0384—Auxiliary electrodes, e.g. for pre-ionisation or triggering, or particular adaptations therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • H01S3/0971—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser transversely excited
    • H01S3/09713—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser transversely excited with auxiliary ionisation, e.g. double discharge excitation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/09—Laser anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/092—Laser beam processing-diodes or transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lasers (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP16971280A 1979-12-03 1980-12-03 Te discharge laser Granted JPS5710272A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/100,025 US4370175A (en) 1979-12-03 1979-12-03 Method of annealing implanted semiconductors by lasers

Publications (2)

Publication Number Publication Date
JPS5710272A JPS5710272A (en) 1982-01-19
JPS6224959B2 true JPS6224959B2 (enExample) 1987-05-30

Family

ID=22277739

Family Applications (2)

Application Number Title Priority Date Filing Date
JP16971280A Granted JPS5710272A (en) 1979-12-03 1980-12-03 Te discharge laser
JP59170530A Pending JPS60196989A (ja) 1979-12-03 1984-08-17 エキシマ・ガス・レ−ザ−

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP59170530A Pending JPS60196989A (ja) 1979-12-03 1984-08-17 エキシマ・ガス・レ−ザ−

Country Status (7)

Country Link
US (1) US4370175A (enExample)
EP (2) EP0152605A1 (enExample)
JP (2) JPS5710272A (enExample)
DK (1) DK512580A (enExample)
MX (1) MX152455A (enExample)
NO (1) NO803635L (enExample)
NZ (1) NZ195737A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04114075U (ja) * 1991-03-25 1992-10-07 株式会社フジタ 作業内容表示装置

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4498183A (en) * 1979-12-03 1985-02-05 Bernard B. Katz High repetition rate, uniform volume transverse electric discharger laser with pulse triggered multi-arc channel switching
US4535220A (en) * 1981-11-10 1985-08-13 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Integrated circuits
DE3200853A1 (de) * 1982-01-14 1983-07-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einer bildaufnahmeeinheit und mit einer ausleseeinheit sowie verfahren zu ihrer herstellung
US4539431A (en) * 1983-06-06 1985-09-03 Sera Solar Corporation Pulse anneal method for solar cell
JPS6041463U (ja) * 1983-08-31 1985-03-23 ワイケイケイ株式会社 障子のはずれ止め装置
US4698486A (en) * 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
EP0164564A1 (de) * 1984-05-18 1985-12-18 Siemens Aktiengesellschaft Anordnung zur Sacklocherzeugung in einem laminierten Aufbau
US5989243A (en) * 1984-12-07 1999-11-23 Advanced Interventional Systems, Inc. Excimer laser angioplasty system
JPH07118444B2 (ja) * 1984-12-20 1995-12-18 ソニー株式会社 半導体薄膜の熱処理方法
US4655849A (en) * 1985-05-22 1987-04-07 Eaton Corporation Semiconductor processing technique for generating dangling surface bonds and growing epitaxial layer by excimer laser
US4661679A (en) * 1985-06-28 1987-04-28 Eaton Corporation Semiconductor laser processing with mirror mask
US4780590A (en) * 1985-11-21 1988-10-25 Penn Research Corporation Laser furnace and method for zone refining of semiconductor wafers
US4752668A (en) * 1986-04-28 1988-06-21 Rosenfield Michael G System for laser removal of excess material from a semiconductor wafer
EP0251280A3 (en) * 1986-06-30 1989-11-23 Nec Corporation Method of gettering semiconductor wafers with a laser beam
US4821091A (en) * 1986-07-22 1989-04-11 The United States Of America As Represented By The United States Department Of Energy Polysilicon photoconductor for integrated circuits
US4948741A (en) * 1986-07-22 1990-08-14 The United States Of America As Represented By The United States Department Of Energy Polysilicon photoconductor for integrated circuits
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US5179262A (en) * 1986-10-14 1993-01-12 Allergan, Inc. Manufacture of ophthalmic lenses by excimer laser
US5053171A (en) * 1986-10-14 1991-10-01 Allergan, Inc. Manufacture of ophthalmic lenses by excimer laser
US5061840A (en) * 1986-10-14 1991-10-29 Allergan, Inc. Manufacture of ophthalmic lenses by excimer laser
US4842782A (en) * 1986-10-14 1989-06-27 Allergan, Inc. Manufacture of ophthalmic lenses by excimer laser
JPH079402Y2 (ja) * 1986-10-21 1995-03-06 三菱電機株式会社 エキシマレ−ザ装置
US6261856B1 (en) 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US4843030A (en) * 1987-11-30 1989-06-27 Eaton Corporation Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes
EP0411001A1 (de) * 1988-04-26 1991-02-06 Siemens Aktiengesellschaft Nach dem te-prinzip arbeitender gaslaser mit einem anregungskreis und einem vielkanal-pseudofunken-schalter
JP2751237B2 (ja) * 1988-09-07 1998-05-18 ソニー株式会社 集積回路装置及び集積回路装置の製造方法
US5472748A (en) * 1990-10-15 1995-12-05 The United States Of America As Represented By The United States Department Of Energy Permanent laser conditioning of thin film optical materials
US5578520A (en) 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US5310990A (en) * 1991-06-03 1994-05-10 The United Stated Of America As Represented By The Secretary Of The Navy Method of laser processing ferroelectric materials
US5766344A (en) 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US5424244A (en) * 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US7097712B1 (en) * 1992-12-04 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Apparatus for processing a semiconductor
US6410374B1 (en) 1992-12-26 2002-06-25 Semiconductor Energy Laborartory Co., Ltd. Method of crystallizing a semiconductor layer in a MIS transistor
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
JPH06232069A (ja) * 1993-02-04 1994-08-19 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
CN100367461C (zh) 1993-11-05 2008-02-06 株式会社半导体能源研究所 一种制造薄膜晶体管和电子器件的方法
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US5510668A (en) * 1994-04-18 1996-04-23 Sandia Corporation Spark gap with low breakdown voltage jitter
JP3469337B2 (ja) * 1994-12-16 2003-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3778456B2 (ja) 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
JP3186066B2 (ja) * 1996-01-23 2001-07-11 フラウンホーファー ゲゼルシャフト ツア フォルデルンク デア アンゲヴァンテン フォルシュンク エー ファウ イオンの広範囲注入のためのイオン源
US6594446B2 (en) 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
US6770546B2 (en) * 2001-07-30 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TW552645B (en) * 2001-08-03 2003-09-11 Semiconductor Energy Lab Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
US6700096B2 (en) * 2001-10-30 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment
TWI289896B (en) * 2001-11-09 2007-11-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
US7050878B2 (en) 2001-11-22 2006-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductror fabricating apparatus
US7133737B2 (en) * 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
US6849825B2 (en) * 2001-11-30 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
JP3949564B2 (ja) * 2001-11-30 2007-07-25 株式会社半導体エネルギー研究所 レーザ照射装置及び半導体装置の作製方法
KR100967824B1 (ko) * 2001-11-30 2010-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제작방법
US7214573B2 (en) * 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
CN101324470B (zh) * 2001-12-26 2011-03-30 加拿大马特森技术有限公司 测量温度和热处理的方法及系统
US6747245B2 (en) * 2002-11-06 2004-06-08 Ultratech Stepper, Inc. Laser scanning apparatus and methods for thermal processing
JP4988202B2 (ja) 2002-12-20 2012-08-01 マトソン テクノロジー カナダ インコーポレイテッド 工作物の支持及び熱処理の方法とシステム
JP4282985B2 (ja) * 2002-12-27 2009-06-24 株式会社半導体エネルギー研究所 表示装置の作製方法
US6958621B2 (en) * 2003-12-02 2005-10-25 International Business Machines Corporation Method and circuit for element wearout recovery
WO2005059991A1 (en) * 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
US7781947B2 (en) * 2004-02-12 2010-08-24 Mattson Technology Canada, Inc. Apparatus and methods for producing electromagnetic radiation
DE102004036220B4 (de) * 2004-07-26 2009-04-02 Jürgen H. Werner Verfahren zur Laserdotierung von Festkörpern mit einem linienfokussierten Laserstrahl
US20080000880A1 (en) * 2006-06-30 2008-01-03 Bao Feng System and method for treating a coating on a substrate
WO2008058397A1 (en) * 2006-11-15 2008-05-22 Mattson Technology Canada, Inc. Systems and methods for supporting a workpiece during heat-treating
WO2009029663A1 (en) 2007-08-27 2009-03-05 Candela Corporation Volume emitter
US7800081B2 (en) * 2007-11-08 2010-09-21 Applied Materials, Inc. Pulse train annealing method and apparatus
US9498845B2 (en) 2007-11-08 2016-11-22 Applied Materials, Inc. Pulse train annealing method and apparatus
US20090120924A1 (en) * 2007-11-08 2009-05-14 Stephen Moffatt Pulse train annealing method and apparatus
WO2009137940A1 (en) 2008-05-16 2009-11-19 Mattson Technology Canada, Inc. Workpiece breakage prevention method and apparatus
US8071457B2 (en) * 2010-01-07 2011-12-06 Globalfoundries Inc. Low capacitance precision resistor
US9276142B2 (en) * 2010-12-17 2016-03-01 First Solar, Inc. Methods for forming a transparent oxide layer for a photovoltaic device
JP6560198B2 (ja) * 2014-05-12 2019-08-14 株式会社日本製鋼所 レーザアニール装置、レーザアニール処理用連続搬送路およびレーザアニール処理方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1301207A (en) * 1970-12-04 1972-12-29 Nat Res Dev Electrode systems for gas lasers
CA983610A (en) * 1973-01-15 1976-02-10 Her Majesty The Queen In Right Of Canada As Represented By The Minister Of National Defence Of Her Majesty's Canadian Government Arc controlled discharge system
US4077020A (en) * 1975-05-20 1978-02-28 Wisconsin Alumni Research Foundation Pulsed gas laser
US4105952A (en) * 1976-05-21 1978-08-08 John Tulip High repetition rate pulsed laser discharge system
US4238694A (en) * 1977-05-23 1980-12-09 Bell Telephone Laboratories, Incorporated Healing radiation defects in semiconductors
IT1078456B (it) * 1977-06-03 1985-05-08 Vitali Gian Franco Perfezionamento nei procedimenti per la produzione di dispositivi a semiconduttore
US4223279A (en) * 1977-07-18 1980-09-16 Mathematical Sciences Northwest, Inc. Pulsed electric discharge laser utilizing water dielectric blumlein transmission line
US4189686A (en) * 1977-09-27 1980-02-19 The United States Of America As Represented By The United States Department Of Energy Combination free electron and gaseous laser
US4154625A (en) * 1977-11-16 1979-05-15 Bell Telephone Laboratories, Incorporated Annealing of uncapped compound semiconductor materials by pulsed energy deposition
US4243433A (en) * 1978-01-18 1981-01-06 Gibbons James F Forming controlled inset regions by ion implantation and laser bombardment
US4147563A (en) * 1978-08-09 1979-04-03 The United States Of America As Represented By The United States Department Of Energy Method for forming p-n junctions and solar-cells by laser-beam processing
US4181538A (en) * 1978-09-26 1980-01-01 The United States Of America As Represented By The United States Department Of Energy Method for making defect-free zone by laser-annealing of doped silicon
US4198246A (en) * 1978-11-27 1980-04-15 Rca Corporation Pulsed laser irradiation for reducing resistivity of a doped polycrystalline silicon film
US4229232A (en) * 1978-12-11 1980-10-21 Spire Corporation Method involving pulsed beam processing of metallic and dielectric materials
US4203781A (en) * 1978-12-27 1980-05-20 Bell Telephone Laboratories, Incorporated Laser deformation of semiconductor junctions
DE2932781C2 (de) * 1979-08-13 1985-10-31 Kraftwerk Union AG, 4330 Mülheim Vorrichtung zur Erzeugung schneller gepulster Kondensatorentladungen in einem Laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04114075U (ja) * 1991-03-25 1992-10-07 株式会社フジタ 作業内容表示装置

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Publication number Publication date
NZ195737A (en) 1986-05-09
EP0152605A1 (en) 1985-08-28
DK512580A (da) 1981-06-04
US4370175A (en) 1983-01-25
EP0033414A3 (en) 1981-09-02
NO803635L (no) 1981-06-04
JPS60196989A (ja) 1985-10-05
EP0033414A2 (en) 1981-08-12
JPS5710272A (en) 1982-01-19
MX152455A (es) 1985-07-24

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