JPS6224953B2 - - Google Patents
Info
- Publication number
- JPS6224953B2 JPS6224953B2 JP1046077A JP1046077A JPS6224953B2 JP S6224953 B2 JPS6224953 B2 JP S6224953B2 JP 1046077 A JP1046077 A JP 1046077A JP 1046077 A JP1046077 A JP 1046077A JP S6224953 B2 JPS6224953 B2 JP S6224953B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- channel
- impurity density
- sit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 53
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000003068 static effect Effects 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 3
- 108091006146 Channels Proteins 0.000 description 53
- 238000005036 potential barrier Methods 0.000 description 16
- 238000009826 distribution Methods 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 12
- 239000000969 carrier Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 230000003321 amplification Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000005520 electrodynamics Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1046077A JPS5396681A (en) | 1977-02-02 | 1977-02-02 | Semiconductor ic |
| NL7801082A NL191525C (nl) | 1977-02-02 | 1978-01-31 | Halfgeleiderinrichting omvattende een stroomkanaalgebied van een eerste geleidingstype dat wordt omsloten door een van een stuurelektrode voorzien stuurgebied van het tweede geleidingstype. |
| GB4100/78A GB1600825A (en) | 1977-02-02 | 1978-02-01 | Semiconductor devices |
| DE2804500A DE2804500C2 (de) | 1977-02-02 | 1978-02-02 | Sperrschicht-Feldeffekttransistor |
| FR7802938A FR2379913A1 (fr) | 1977-02-02 | 1978-02-02 | Semi-conducteur a caracteristique i-v non sature et circuit integre comportant un tel semi-conducteur |
| DE2858820A DE2858820C2 (de) | 1977-02-02 | 1978-02-02 | I·2·L-Schaltungsstruktur |
| US06/515,462 US4608582A (en) | 1977-02-02 | 1983-07-20 | Semiconductor device having non-saturating I-V characteristics and integrated circuit structure including same |
| NL9402176A NL9402176A (nl) | 1977-02-02 | 1994-12-21 | Halfgeleiderinrichting. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1046077A JPS5396681A (en) | 1977-02-02 | 1977-02-02 | Semiconductor ic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5396681A JPS5396681A (en) | 1978-08-24 |
| JPS6224953B2 true JPS6224953B2 (no) | 1987-05-30 |
Family
ID=11750737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1046077A Granted JPS5396681A (en) | 1977-02-02 | 1977-02-02 | Semiconductor ic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5396681A (no) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6248455U (no) * | 1985-09-13 | 1987-03-25 | ||
| JPH0523241Y2 (no) * | 1987-06-12 | 1993-06-15 | ||
| JPH0523242Y2 (no) * | 1987-09-02 | 1993-06-15 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5598871A (en) * | 1979-01-22 | 1980-07-28 | Semiconductor Res Found | Static induction transistor |
-
1977
- 1977-02-02 JP JP1046077A patent/JPS5396681A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6248455U (no) * | 1985-09-13 | 1987-03-25 | ||
| JPH0523241Y2 (no) * | 1987-06-12 | 1993-06-15 | ||
| JPH0523242Y2 (no) * | 1987-09-02 | 1993-06-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5396681A (en) | 1978-08-24 |
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