JPS6224845B2 - - Google Patents

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Publication number
JPS6224845B2
JPS6224845B2 JP53087194A JP8719478A JPS6224845B2 JP S6224845 B2 JPS6224845 B2 JP S6224845B2 JP 53087194 A JP53087194 A JP 53087194A JP 8719478 A JP8719478 A JP 8719478A JP S6224845 B2 JPS6224845 B2 JP S6224845B2
Authority
JP
Japan
Prior art keywords
magnetic head
gap
glass
lead
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53087194A
Other languages
Japanese (ja)
Other versions
JPS5514557A (en
Inventor
Takayuki Kumasaka
Makoto Konosu
Hideo Zama
Kanji Kawano
Hideo Fujiwara
Sanehiro Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8719478A priority Critical patent/JPS5514557A/en
Publication of JPS5514557A publication Critical patent/JPS5514557A/en
Publication of JPS6224845B2 publication Critical patent/JPS6224845B2/ja
Granted legal-status Critical Current

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  • Magnetic Heads (AREA)

Description

【発明の詳細な説明】 本発明は磁気ヘツドの製造法に関するもので、
特にビデオテープレコーダーの記録再生ヘツドの
ようにギヤツプ長の狭い磁気ヘツドに適用して効
果のあるものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a magnetic head.
It is particularly effective when applied to a magnetic head with a narrow gap length, such as a recording/reproducing head of a video tape recorder.

フエライトなどで形成された一対の磁気ヘツド
コアブロツクのギヤツプ形成面にガラス薄膜をス
パツタ蒸着などの方法で形成し、加熱しながら圧
着することによつてビデオテープレコーダー用狭
ギヤツプ磁気ヘツドを製造する方法が提案されて
いるが、鉛ガラスをスパツタ蒸着する場合にはス
パツタ電力密度によつて形成膜の鉛の含有量の変
動が大きく、しばしば、ギヤツプから剥離してし
まう事故が起つた。
A method of manufacturing a narrow gap magnetic head for a videotape recorder by forming a thin glass film on the gap forming surfaces of a pair of magnetic head core blocks made of ferrite or the like by a method such as sputter deposition, and press-bonding the film while heating. However, when sputtering lead glass, the lead content of the formed film varies greatly depending on the sputtering power density, and accidents often occur in which the lead glass peels off from the gap.

磁気ヘツドのギヤツプ形成はフロントギヤツプ
とリアーギヤツプをガラスで接合する場合、フロ
ントギヤツプは有効ギヤツプ長を精度よく得よう
とすると、鉛系のガラスの鉛含有量を少なくして
反応層を極力減じることが望ましく、一方リアー
ギヤツプは反応層発生の有無よりも接着強度を高
くするために鉛含有量の多いガラスが望ましい。
When forming a gap in a magnetic head by joining the front gap and rear gap with glass, in order to accurately obtain the effective gap length of the front gap, it is desirable to reduce the lead content of the lead-based glass to reduce the reaction layer as much as possible. On the other hand, for the rear gap, it is preferable to use glass with a high lead content in order to increase the adhesive strength, rather than the presence or absence of a reaction layer.

本発明の目的は上記のような従来の欠点を解消
し、スパツタ・ターゲツトとして用いる高含有鉛
ガラスから所望の組成のガラス膜を許容範囲内に
コントロールして高精度でかつ容易に狭ギヤツプ
を得る磁気ヘツドの製造法を提供するものであ
る。
The purpose of the present invention is to eliminate the above-mentioned conventional drawbacks, and to easily obtain a narrow gap with high precision by controlling a glass film of a desired composition from high lead glass used as a sputtering target within an acceptable range. A method of manufacturing a magnetic head is provided.

一般にスパツタ蒸着においてSiO2、Al2O3
PbOなどのガラス組成物単体ではスパツタ電力密
度の増加と共にスパツタレートが増加する。とこ
ろが、SiO2、Al2O3、ZnO等の構成ガラスにPbO
が含有されたガラス基板をターゲツトとして用い
た場合、スパツタ電力密度によつてスパツタ形成
膜中のPbOの量が急激に変化することを見出し
た。この原因は明確ではないが、基板の温度上昇
による付着効率の変化、あるいは選択スパツタに
よるものと考れられる。スパツタ膜中の鉛の含有
量は電力密度の増加によつて急激に減少し、電力
密度が3W/cm2ではターゲツト組成の1/10以下に
なつてしまう。
In general, SiO 2 , Al 2 O 3 ,
For a single glass composition such as PbO, the sputter rate increases as the sputter power density increases. However, PbO is added to constituent glasses such as SiO 2 , Al 2 O 3 , and ZnO.
We have found that when a glass substrate containing PbO is used as a target, the amount of PbO in the sputtered film changes rapidly depending on the sputtering power density. Although the cause of this is not clear, it is thought to be due to a change in adhesion efficiency due to an increase in the temperature of the substrate or selective sputtering. The lead content in the sputtered film decreases rapidly as the power density increases, and at a power density of 3 W/cm 2 it becomes less than 1/10 of the target composition.

例えば、PbOが70wt%含有するガラスにおい
ては1.2W/cm2以上にするとスパツタ膜の鉛含有
量が20%以上減少してしまう。鉛ガラス中の鉛の
量が20%以上減少するとギヤツプの接着強度が低
下し、磁気ヘツドチツプ組立中でギヤツプからの
剥離が起り、ヘツド歩留が低下する。これは鉛の
減少によつてガラス膜自体が高融点化するため
で、これを解消するためにはギヤツプ形成温度を
高くしなければならず、形成温度を高くするとフ
エライトとの反応が急激に進行し、記録再生特性
を悪くする原因となる。
For example, in the case of glass containing 70 wt% PbO, if the power is set at 1.2 W/cm 2 or more, the lead content in the sputtered film will decrease by 20% or more. If the amount of lead in the lead glass decreases by more than 20%, the adhesive strength of the gap will decrease, resulting in delamination from the gap during magnetic head chip assembly, and a decrease in head yield. This is because the melting point of the glass film itself increases due to the decrease in lead, and in order to eliminate this, the gap formation temperature must be raised, and when the formation temperature is raised, the reaction with ferrite progresses rapidly. However, this causes deterioration of recording and reproducing characteristics.

本発明におけるギヤツプ形成条件は窒素雰囲気
中で700℃〜800℃で行なわれ、この場合リアーギ
ヤツプ接合は鉛含有量が50〜70wt%が適してい
る。この時のスパツタ電力密度としては0.5〜
1.2W/cm2が適当であり、0.7W/cm2〜1.0W/cm2
最適である。0.5W/cm2以下ではスパツタ速度が
極端に遅くなり実用的でない。
The gap formation conditions in the present invention are carried out in a nitrogen atmosphere at 700 DEG C. to 800 DEG C. In this case, a suitable rear gap bonding has a lead content of 50 to 70 wt%. At this time, the sputter power density is 0.5~
1.2 W/cm 2 is appropriate, and 0.7 W/cm 2 to 1.0 W/cm 2 is optimal. If it is less than 0.5 W/cm 2 , the sputtering speed becomes extremely slow and is not practical.

本発明によれば、磁気ヘツドを構成する一対の
高透磁率磁性材料からなるブロツクのギヤツプ形
成面にスパツタ蒸着法によつてガラス薄膜を形成
し、互いのギヤツプ対向面を突合せ一定の加圧下
で加熱接合し、磁気ヘツドのギヤツプを形成する
工程を有する磁気ヘツドの製造方法において、ス
パツタ・ターゲツトとして鉛含有ガラスを用い、
磁気ヘツドブロツクのギヤツプ形成面に鉛ガラス
薄膜を形成する際にスパツタ電力密度を0.5〜
1.2W/cm2の範囲とし、該鉛ガラスの溶融温度付
近で一定に加圧して接合し、磁気ヘツドのギヤツ
プを形成することを特徴とした磁気ヘツドの製造
方法としたことにより上記目的は達成される。
According to the present invention, a glass thin film is formed by sputter evaporation on the gap forming surfaces of a pair of blocks made of high permeability magnetic materials constituting the magnetic head, and the opposing surfaces of the gaps are abutted against each other under constant pressure. In a method for manufacturing a magnetic head, which includes a step of heating and bonding to form a gap in the magnetic head, using lead-containing glass as a sputter target,
When forming a lead glass thin film on the gap forming surface of a magnetic headblock, the sputtering power density is set to 0.5~
The above object was achieved by using a method of manufacturing a magnetic head characterized by bonding under constant pressure in the range of 1.2 W/cm 2 at around the melting temperature of the lead glass to form a gap in the magnetic head. be done.

以下本発明を実施例によつて詳しく説明する。 The present invention will be explained in detail below with reference to Examples.

本発明の実施例における鉛ガラスターゲツトは
次の組成のものを用いた。PbO70wt%、SiO25wt
%、Al2O35wt%、B2O312wt%、ZnO8wt%で軟
化温度は435℃である。
The lead glass target used in the examples of the present invention had the following composition. PbO70wt%, SiO2 5wt
%, Al 2 O 3 5wt%, B 2 O 3 12wt%, ZnO 8wt%, and the softening temperature is 435°C.

装置はRFスパツタ装置を用い、スパツタ・タ
ーゲツト基板は直径200mmである。これを5×
10-3Torrのアルゴン雰囲気中でスパツタ蒸着を
行ない、スパツタ電力密度は0.5W/cm2〜4.8W/
cm2の範囲で行なつた。
The device used was an RF sputtering device, and the sputtering target substrate had a diameter of 200 mm. Do this 5x
Sputter deposition was performed in an argon atmosphere of 10 -3 Torr, and the sputter power density was 0.5 W/cm 2 to 4.8 W/
It was carried out in the cm 2 range.

第1図はスパツタ電力密度と膜組成変動を示し
た図で、X線マイクロアナライザーで分析した各
成分元素の検出イオン強度である。図から明らか
のようにPb量1はスパツタ電力密度の増加と共
に急激に減少することがわかる。例えば、
1.7W/cm2ではPb量1は1/15以下に減少し、軟化
温度が700℃付近になつてしまう。一方、Si量
2、Al量3、B量4、はほとんど変化しない。
ただし、Zn量5の量は多少減少するので増量し
ておく必要がある。
FIG. 1 is a diagram showing sputtering power density and film composition variation, and shows the detected ion intensity of each component element analyzed by an X-ray microanalyzer. As is clear from the figure, the amount of Pb 1 decreases rapidly as the sputtering power density increases. for example,
At 1.7 W/cm 2 , the Pb amount 1 decreases to 1/15 or less, and the softening temperature becomes around 700°C. On the other hand, the Si amount 2, the Al amount 3, and the B amount 4 hardly change.
However, since the amount of Zn amount 5 decreases somewhat, it is necessary to increase the amount.

スパツタ・ターゲツト組成と同程度の組成のガ
ラス膜を得るためには0.5W/cm2で行なうと良
い。
In order to obtain a glass film with a composition comparable to that of the sputter target, it is recommended to conduct the process at 0.5 W/cm 2 .

次に具体的な磁気ヘツドのギヤツプ形成におけ
るスパツタ膜の構成について示す。
Next, the structure of the sputtered film for specifically forming the gap in the magnetic head will be described.

第2図はビデオテープレコーダに用いられる狭
トラツク磁気ヘツドの狭トラツク加工後のブロツ
ク6,7を示し、一方のブロツクにはコイル巻線
溝8が形成されている。溝9,10は磁気ヘツド
先端部のみを狭トラツク規制するためのもので、
溝部には最終的にガラスを充填して補強する。
FIG. 2 shows blocks 6 and 7 of a narrow track magnetic head used in a video tape recorder after narrow track processing, with a coil winding groove 8 formed in one of the blocks. Grooves 9 and 10 are for restricting narrow tracks only at the tip of the magnetic head.
The grooves are finally filled with glass to strengthen them.

次にギヤツプ形成はギヤツプ対向面11,12
に本発明法によつてスパツタ蒸着膜を形成する。
Next, the gap is formed on the gap facing surfaces 11 and 12.
A sputter-deposited film is formed by the method of the present invention.

ガラス膜は第3図に示す構成によつて行なつ
た。第3図aは一方の磁気ヘツドブロツクの断面
図を示し、フロントギヤツプ構成面13とリアー
ギヤツプ構成面14に次のような方法でガラス膜
を形成した。
The glass film was formed using the configuration shown in FIG. FIG. 3a shows a sectional view of one of the magnetic headblocks, in which a glass film was formed on the front gap forming surface 13 and the rear gap forming surface 14 by the following method.

フロント部13はフエライトとの反応を防ぐた
めに、鉛を含有しない、SiO2膜を0.24μm形成
し、リア部14に電力密度1W/cm2でガラス膜を
0.28μm形成した後、一対のブロツクを対向させ
窒素雰囲気中で加圧しながら、770℃で3分間保
持し、接合して0.5μmのギヤツプを形成した。
この場合フロント部は十分な接着強度を持たない
が、同時に狭トラツク溝に充填されるガラスによ
つて十分に補強される。リアー部の膜厚を多目に
した理由は低融点ガラスを溶融点まで温度を上げ
るため多少つぶれる分を考慮したことによる。
In order to prevent reaction with ferrite, a lead-free SiO 2 film with a thickness of 0.24 μm is formed on the front part 13, and a glass film with a power density of 1 W/cm 2 is formed on the rear part 14.
After forming a gap of 0.28 μm, a pair of blocks were placed facing each other, held at 770° C. for 3 minutes under pressure in a nitrogen atmosphere, and joined to form a gap of 0.5 μm.
In this case, the front part does not have sufficient adhesive strength, but at the same time it is sufficiently reinforced by the glass filling the narrow track groove. The reason for increasing the film thickness in the rear part is to take into account the fact that the low melting point glass will be slightly crushed in order to raise the temperature to its melting point.

他の実施例においては第3図bに示すようにフ
ロント部、リアー部の第1層目に鉛を含有しない
SiO2膜17を0.2μm形成しており、リアー部の
みに0.70W/cm2で0.05μmの鉛60%含有ガラス膜
18を形成して、窒素雰囲気中で加圧しながら
780℃で3分間保持し、接合して0.5μmのギヤツ
プを形成した。
In other embodiments, as shown in Figure 3b, the first layer of the front and rear parts does not contain lead.
A SiO 2 film 17 of 0.2 μm is formed, and a 0.05 μm glass film 18 containing 60% lead is formed at 0.70 W/cm 2 only on the rear part, and is heated under pressure in a nitrogen atmosphere.
They were held at 780°C for 3 minutes and bonded to form a gap of 0.5 μm.

以上のようにして得られた磁気ヘツドブロツク
は第4図に示すような磁気ヘツドコア19に切断
する。溝部には補強ガラス20が充填されてい
る。
The magnetic head block thus obtained is cut into magnetic head cores 19 as shown in FIG. The groove portion is filled with reinforcing glass 20.

以上、本発明によれば高精度で強度の高いギヤ
ツプを有する磁気ヘツドを得ることができる。
As described above, according to the present invention, a magnetic head having a gap with high precision and high strength can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はスパツタ電力密度とスパツタ膜組成の
変化を説明する図、第2図は一対の磁気ヘツド加
工ブロツクの斜視図、第3図はスパツタ・ガラス
膜の構成図、第4図は本発明によつて得られた磁
気ヘツドコアを示す図。
Figure 1 is a diagram illustrating changes in sputter power density and sputter film composition, Figure 2 is a perspective view of a pair of magnetic head processing blocks, Figure 3 is a configuration diagram of a sputter glass film, and Figure 4 is a diagram of the present invention. FIG. 3 is a diagram showing a magnetic head core obtained by.

Claims (1)

【特許請求の範囲】[Claims] 1 磁気ヘツドを構成する一対の高透磁率磁性材
料からなるブロツクのギヤツプ形成面にスパツタ
蒸着法によつてガラス薄膜を形成し、互いのギヤ
ツプ対向面を突合せ一定の加圧下で加熱接合し、
磁気ヘツドのギヤツプを形成する工程を有する磁
気ヘツドの製造方法において、スパツタ・ターゲ
ツトとして鉛含有ガラスを用い、磁気ヘツドブロ
ツクのギヤツプ形成面に鉛ガラス薄膜を形成する
際にスパツタ電力密度を0.5〜1.2W/cm2の範囲と
し、該鉛ガラスの溶融温度付近で一定に加圧して
接合し、磁気ヘツドのギヤツプを形成することを
特徴とした磁気ヘツドの製造方法。
1. A thin glass film is formed by sputter deposition on the gap forming surfaces of a pair of blocks made of high magnetic permeability magnetic materials constituting the magnetic head, and the opposing surfaces of the gaps are butted and heated and bonded under constant pressure.
In a method for manufacturing a magnetic head that includes a step of forming a gap in a magnetic head, a lead-containing glass is used as a sputter target, and a sputter power density is set to 0.5 to 1.2 W when forming a lead glass thin film on the gap forming surface of the magnetic head block. 2. A method for manufacturing a magnetic head, characterized in that the gap of the magnetic head is formed by bonding under constant pressure near the melting temperature of the lead glass.
JP8719478A 1978-07-19 1978-07-19 Manufacture for magnetic head Granted JPS5514557A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8719478A JPS5514557A (en) 1978-07-19 1978-07-19 Manufacture for magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8719478A JPS5514557A (en) 1978-07-19 1978-07-19 Manufacture for magnetic head

Publications (2)

Publication Number Publication Date
JPS5514557A JPS5514557A (en) 1980-02-01
JPS6224845B2 true JPS6224845B2 (en) 1987-05-30

Family

ID=13908165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8719478A Granted JPS5514557A (en) 1978-07-19 1978-07-19 Manufacture for magnetic head

Country Status (1)

Country Link
JP (1) JPS5514557A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133514A (en) * 1981-02-06 1982-08-18 Sumitomo Special Metals Co Ltd Gap forming composite target and gap formation of magnetic head

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342016A (en) * 1976-09-28 1978-04-17 Matsushita Electric Ind Co Ltd Preparation of magnetic head

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342016A (en) * 1976-09-28 1978-04-17 Matsushita Electric Ind Co Ltd Preparation of magnetic head

Also Published As

Publication number Publication date
JPS5514557A (en) 1980-02-01

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