JPS62247565A - Manufacture of optical sensor - Google Patents
Manufacture of optical sensorInfo
- Publication number
- JPS62247565A JPS62247565A JP61090441A JP9044186A JPS62247565A JP S62247565 A JPS62247565 A JP S62247565A JP 61090441 A JP61090441 A JP 61090441A JP 9044186 A JP9044186 A JP 9044186A JP S62247565 A JPS62247565 A JP S62247565A
- Authority
- JP
- Japan
- Prior art keywords
- forming
- optical sensor
- value
- cdse
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000010408 film Substances 0.000 claims abstract description 24
- 230000001681 protective effect Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims abstract description 7
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000006104 solid solution Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 abstract 2
- 230000003213 activating effect Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 235000011148 calcium chloride Nutrition 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- CBGUOGMQLZIXBE-XGQKBEPLSA-N clobetasol propionate Chemical compound C1CC2=CC(=O)C=C[C@]2(C)[C@]2(F)[C@@H]1[C@@H]1C[C@H](C)[C@@](C(=O)CCl)(OC(=O)CC)[C@@]1(C)C[C@@H]2O CBGUOGMQLZIXBE-XGQKBEPLSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229940112877 olux Drugs 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はファクシミリ装置や元ディスクなどのＯＡ機器
の画像入力部に用いられる光センサの製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing an optical sensor used in an image input section of OA equipment such as a facsimile machine or an original disk.
従来の技術
近年、ファクシミリ装置や各種０ム機器の画像情報入力
部の小型化や画像ひずみの改善を目指して原稿と同一寸
法の密着型ラインセンサが開発され、これを用いた画像
読取装置が使用され始めており、さらに現在では階調面
での画像品質の改善やカラー化が強く望まれている。Conventional technology In recent years, a close-contact line sensor with the same dimensions as the original document has been developed with the aim of downsizing the image information input section of facsimile machines and various types of zero-meter devices and improving image distortion, and image reading devices using this have been developed. Currently, there is a strong desire for improved image quality in terms of gradation and for colorization.
さて、ＣｄＳ 、 ＣｄＳｅあるいはこれらの固溶体Ｃ
ｄＳ −Ｃａ５ｅ ｆ主体として成る光センサは光電流
が大きいのが特徴で、このためこのセンサを用いた密着
型ラインセンサでは周辺回路の設計が容易となる。一方
、この光センサは光電流ＪＰの照射光強度（すなわち原
稿からの反射光強度）Ｌに対する比例性に劣る欠点があ
る。すなわち後者ではＪｐｏｃｌ、としたときのγ値が
、通常の使用時のセンサ面照度６０〜１ｏＯβｕｘで０
．６〜０．７５と小さい。光強度りが太き（２００、３
００１１ｕｘとなるとγはさらに小さくなるので、高光
強度が得られるレンズレス方式の完全密着型ラインセン
サではさらに不都合を生じる。Now, CdS, CdSe or their solid solution C
An optical sensor mainly composed of dS-Ca5e f is characterized by a large photocurrent, and therefore, in a contact type line sensor using this sensor, it is easy to design the peripheral circuit. On the other hand, this optical sensor has a drawback in that the proportionality of the photocurrent JP to the irradiated light intensity (that is, the reflected light intensity from the document) L is poor. In other words, in the latter case, the γ value when Jpocl is 0 at sensor surface illuminance of 60 to 1oOβux during normal use.
．． It is small at 6-0.75. The light intensity is high (200, 3
When the value becomes 0011ux, γ becomes even smaller, which causes further inconvenience in a lensless fully contact type line sensor that can obtain high light intensity.
発明が解決しようとする問題点
この様にγ値が小さいと例えば第２図に見る様に、セン
サ面での光強度に対して生じる光電流に比例した出力信
号値がγ＝１．０の場合は比例しているのにγ＝０．６
の場合は出力信号値の比例性がひどく劣ることが分る。Problems to be Solved by the Invention When the γ value is small in this way, for example, as shown in Figure 2, the output signal value proportional to the photocurrent generated with respect to the light intensity on the sensor surface is Even though it is proportional, γ=0.6
It can be seen that in the case of , the proportionality of the output signal value is extremely poor.
このため階調すなわち中間調を必要とする場合には余分
の回路処理を必要とすることになる。Therefore, when gradations, that is, intermediate tones are required, extra circuit processing is required.
ＣｄＳ 、 ＣｄＳｅあるいは固溶体ＣｄＳ −ＣｄＳ
ｅ ｆＣｄＣβ２で活性化した光導電型のセンサの場合
、γ値を大きくする。すなわち１．０に近づける方法と
してはＪｐ ｋ小さくすればよい。例えば■不純物であ
るＣｕ濃度を高くする、■活性化時の温度を高くするな
どの方法によってＪＰｉ小さくすることが出来るためγ
値向上が可能となる。ただ同時に光電流の立下シ時間τ
ｄは小さくなるが立上り時間τｒが大きくなり、全体と
して光応答速度が遅くなってしまうという大きな欠点が
ある。CdS, CdSe or solid solution CdS-CdS
e For photoconductive sensors activated with fCdCβ2, increase the γ value. In other words, the method for approaching 1.0 is to reduce Jp k. For example, JPi can be reduced by increasing the concentration of Cu, which is an impurity, or increasing the temperature during activation.
It is possible to improve the value. However, at the same time, the photocurrent fall time τ
Although d becomes smaller, the rise time τr becomes larger, and there is a major drawback that the optical response speed becomes slower as a whole.
そこで、本発明は光応答速度を遅くせずしてγ値を大き
くする光センサの製造方法を提供するものである。Therefore, the present invention provides a method for manufacturing an optical sensor that increases the γ value without slowing down the optical response speed.
問題点を解決するための手段
この目的を達成するため本発明は、絶縁性基板上に、Ｃ
ｄＳ 、 ＣｄＳｅあるいはこれらの固溶体Ｃｄ５−
ＣｄＳｅを主体として成る薄膜を形成し、該薄膜を高温
でＣａＧ１２の蒸気に暴露し光電的に活性化して後対向
電極を設け、さらに保護膜を形成し、前記対向電極を形
成後、高温で前後保護膜形成の前に前記光センサに一定
光量以上の光を照射するものである。Means for Solving the Problems In order to achieve this object, the present invention provides C
dS, CdSe or their solid solution Cd5-
A thin film mainly composed of CdSe is formed, the thin film is exposed to CaG12 vapor at high temperature and photoelectrically activated to form a counter electrode, and a protective film is further formed. Before forming the protective film, the optical sensor is irradiated with a certain amount of light or more.
作用
この方法により本発明は、光導電型光センサの光電流値
が大きいという特長を損わずして、しかもその光電流の
光応答速度を遅くせずしてγ値を大きくすることができ
る。Effect: By using this method, the present invention can increase the γ value without impairing the feature of the photoconductive type optical sensor that the photocurrent value is large, and without slowing down the photoresponse speed of the photocurrent. .
実施例
以下実施例により本方法とその効果の詳細について述べ
る。EXAMPLES The details of this method and its effects will be described below using examples.
実施例１
絶縁性基板（コーニング社、９７０６９．２３０×２５
×１．２−）上に０．０１モル％のＯｕを含んだ厚さ４
０００人のＣａＳα６Ｓｅα４の蒸着膜を形成し、フォ
トエツチングにより主走査方向に島状（ｅ。Example 1 Insulating substrate (Corning, 97069.230×25
×1.2-) thickness 4 containing 0.01 mol% O on top
A vapor-deposited film of CaSα6Seα4 of 0.00000000000000000000000000000000000000000000000 film is formed in the form of islands (e) in the main scanning direction.
×３６ｏμｒｒｆ）に８ビット／ｍｍの割合で１７２８
ビツト配置する。この島状のＣｄＳα６Ｓｅα４膜を５
００°ＣでＣａＣｌ２の飽和蒸気中で加熱処理して光電
的に活性化して光導電体膜にした後、島状の膜の各々に
対向電極（ＮｉＣｒ／ムＵ蒸着膜）すなわち共通電極と
個別電極を形成する。対向電極のギャップは６０μｍで
ある。その後空気中１７６°Ｃにおいてセンサに表面で
の光強度２０００ ｊＢｕｘの可視光（Ｗ−βａｍｐ
）を照射する。×36oμrrf) at a rate of 8 bits/mm
Place bits. This island-like CdSα6Seα4 film is
After being heat-treated in CaCl2 saturated vapor at 00°C and photoelectrically activated to form a photoconductor film, each of the island-like films is coated with a counter electrode (NiCr/MU-deposited film), that is, a common electrode and an individual electrode. Form an electrode. The gap between the opposing electrodes is 60 μm. Thereafter, the sensor was exposed to visible light (W-βamp
).
その後低温処理で形成可能な有機絶縁物すなわちシリコ
ン樹脂を塗布し、９０″Ｃで加熱し保護膜を形成する。Thereafter, an organic insulator that can be formed by low-temperature treatment, ie, silicone resin, is applied and heated at 90''C to form a protective film.
このラインセンサのうち、１素子の特性が光照射時間と
共に変る様子を第１表にまとめる。なお特性は印加電圧
ＤＣ１０Ｖ、光照射は緑色ＬＥＤ光（ｓ７ｏｎｍ、 １
ｏＯＪｕｘ ）を１Ｈｚ（０，５ｓｅｃずつ）で点滅し
て測定した。応答時間は光電流ＪＰが０から飽和値の６
０％に上がるまでの時間を立上シ時間τｒｓ ＪＰが飽
和値からその６０％に下がるまでの時間を立下り時間τ
ｄとした。Table 1 summarizes how the characteristics of one element of this line sensor change with light irradiation time. The characteristics are that the applied voltage is DC 10V, and the light irradiation is a green LED light (s7onm, 1
oOJux) was blinked at 1 Hz (0.5 sec each). The response time is the photocurrent JP from 0 to the saturation value of 6.
The time it takes for JP to rise to 0% is the rise time τrs The time it takes for JP to fall from the saturation value to 60% of it is the fall time τ
It was set as d.
またγは６０〜１００βｕｘ間での平均値である。Moreover, γ is an average value between 60 and 100βux.
（以下余白）
時間、すなわち露光量の増大と共にＪＰが減少し、γが
増大することが分る。ただ過度に露光するとＪＰが小さ
くなってしまうのでＪＰは５μＡ以上であることが好ま
しい。(The following is a blank space) It can be seen that JP decreases and γ increases as time, that is, the exposure amount increases. However, if excessive exposure occurs, JP becomes small, so it is preferable that JP is 5 μA or more.
一方、光照射時の温度を１００ないし４００″Ｃと変え
た場合の結果を第２表にまとめである。On the other hand, Table 2 summarizes the results when the temperature during light irradiation was varied from 100 to 400''C.
１００°Ｃ以下では効果が小さく、４００’Ｃ以上では
電極（ＮｉＣｒ−Ａｕ ）が剥離することがある。この
時の光強度は同じ＜ ２０００βｕｘで処理時間は３０
分および６０分である。Below 100°C, the effect is small, and above 400°C, the electrode (NiCr-Au) may peel off. The light intensity at this time is the same < 2000βux and the processing time is 30
minutes and 60 minutes.
（以下金 白）
この様にγ値を大きくすることができる。この光照射時
の雰囲気は空気中だけでなく、Ｎ２やＡｒなどの中性雰
囲気でも良い。(hereinafter referred to as Kinpaku) In this way, the γ value can be increased. The atmosphere during this light irradiation may be not only air but also a neutral atmosphere such as N2 or Ar.
実施例２
本出願人の特願昭５９−２５００２９号に示したレンズ
レス方式ラインセンサを作製した。すなわちガラス基板
１（コーニング社、＄７０５９．２３０Ｘ２５Ｘ１，２
Ｊ）上に遮光膜（Ｏｒ ）（１ｏｏｏ人蒸着）２、金属
酸化膜や窒化膜からなる拡散防止膜３、高融点材料より
なる拡散防止膜４を形成し、その上に絶縁性ガラス積１
膜（ａｏｏｏ人スパッタ）６を形成し、その上に０．０
１モル％のＣｕを含んだ厚さ４０００人のＣｄＳα６Ｓ
ｅα４の蒸着膜６を形成し、フォトエツチングにより主
走査方向に島状（３０Ｘ６０μｒｎ”）に８ピット／ｍ
ｍの割合で１７２８ビツト配置する。その後実施例１と
同様に活性化し電極形成を行ない、２１０’Ｃで３０分
および６０分間可視光照射を行ない、シリコン樹脂の保
護膜アを形成した。８は照明光、９は照明光、１０け読
み取り原慝である、蕊着１［ｓの対向電極のギャップは
３０μｍである。光照射時の強度は２０００ ｌｕｘの
可視光（Ｗ −＃ａｍｐ ） で温度は実施例１より
若干高温の２１０’Ｃとした。このレンズレス方式のラ
インセンサは実施例１よりも光強度が約３倍と高く得ら
れＪｐが大きくなるのでγ値はそれに従って小さくなる
。そのために光照射温度を少し高めで処理しＪＰを少し
小さ目にするためである。得られたラインセンサの１素
子の特性を第３表にまとめる。測定条件はセンサ面光強
度を３ Ｑ ＯｌｕＸとしたほかは、実施例１と同じで
ある。γ値は１５０〜３００ ｊｌｕｘでの平均値であ
る。Example 2 A lensless line sensor as disclosed in Japanese Patent Application No. 59-250029 filed by the present applicant was manufactured. That is, glass substrate 1 (Corning Inc., $7059.230X25X1,2
J) A light shielding film (Or) (1ooo human vapor deposition) 2, a diffusion prevention film 3 made of a metal oxide film or a nitride film, and a diffusion prevention film 4 made of a high melting point material are formed on top of that, and an insulating glass layer 1 is formed thereon.
Form a film (aooo person sputter) 6 and 0.0
4000mm thick CdSα6S containing 1 mol% Cu
A vapor deposited film 6 of eα4 is formed, and 8 pits/m are formed in an island shape (30×60μrn”) in the main scanning direction by photoetching.
1728 bits are arranged at a ratio of m. Thereafter, activation and electrode formation were performed in the same manner as in Example 1, and visible light irradiation was performed at 210'C for 30 and 60 minutes to form a silicone resin protective film A. 8 is the illumination light, 9 is the illumination light, 10 is the reading source, and the gap between the opposing electrodes of the coating 1[s is 30 μm. The intensity during light irradiation was 2000 lux of visible light (W-#amp), and the temperature was 210'C, which was slightly higher than in Example 1. This lensless type line sensor has a light intensity that is about three times higher than that of Example 1, and Jp increases, so the γ value decreases accordingly. For this reason, the light irradiation temperature is set a little higher to make JP a little smaller. Table 3 summarizes the characteristics of one element of the obtained line sensor. The measurement conditions were the same as in Example 1, except that the sensor surface light intensity was 3Q OluX. The γ value is an average value from 150 to 300 jlux.
第３表 この様に高い照度域でのγ値の改善が著しい。Table 3 In this way, the improvement in the γ value in the high illumination range is remarkable.
発明の効果
本発明は、光電流値が大きく、かつ光応答速度を遅くせ
ずしてγ値の大なる光センナを実現することが可能とな
る。Effects of the Invention The present invention makes it possible to realize an optical sensor with a large photocurrent value and a large γ value without slowing down the optical response speed.
第１図は本発明の一実施例の元センサの断面図、第２図
は光センサにおける光電流と光強度の関係を示す図であ
る。
１・・・・・・ガラス基板、６・・・・・・Ｃｄ５Ｓｅ
蒸着膜。FIG. 1 is a sectional view of an original sensor according to an embodiment of the present invention, and FIG. 2 is a diagram showing the relationship between photocurrent and light intensity in the optical sensor. 1...Glass substrate, 6...Cd5Se
Vapor deposited film.
Claims (4)
の固溶体ＣｄＳ−ＣｄＳｅを主体として成る薄膜を形成
し、前記薄膜を高温でＣｄＣｌ＿２の蒸気に暴露し光電
的に活性化して後対向電極を設け、前記対向電極を形成
後、前記保護膜形成の前に特定光量以上の光を照射する
ことを特徴として成る光センサの製造方法。(1) Forming a thin film mainly composed of CdS, CdSe, or their solid solution CdS-CdSe on an insulating substrate, exposing the thin film to CdCl_2 vapor at high temperature to photoelectrically activate it, and then providing a counter electrode; A method for manufacturing an optical sensor, characterized in that after forming the counter electrode and before forming the protective film, a light of a specific amount or more is irradiated.
特徴とする特許請求の範囲第１項記載の光センサの製造
方法。(2) The method for manufacturing an optical sensor according to claim 1, wherein the temperature during light irradiation is 100 to 400°C.
縁物であることを特徴とする特許請求の範囲第１項記載
の光センサの製造方法。(3) The method for manufacturing an optical sensor according to claim 1, wherein the protective film is an insulator that can be formed by low-temperature treatment at 100° C. or lower.
ることを特徴とする特許請求の範囲第１項記載の光セン
サの製造方法。(4) The method for manufacturing an optical sensor according to claim 1, wherein the amount of visible light is 10^6 lux·sec or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61090441A JPS62247565A (en) | 1986-04-18 | 1986-04-18 | Manufacture of optical sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61090441A JPS62247565A (en) | 1986-04-18 | 1986-04-18 | Manufacture of optical sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62247565A true JPS62247565A (en) | 1987-10-28 |
Family
ID=13998702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61090441A Pending JPS62247565A (en) | 1986-04-18 | 1986-04-18 | Manufacture of optical sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62247565A (en) |
-
1986
- 1986-04-18 JP JP61090441A patent/JPS62247565A/en active Pending
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