JPS62247082A - Apparatus for producing semiconductor device - Google Patents
Apparatus for producing semiconductor deviceInfo
- Publication number
- JPS62247082A JPS62247082A JP9093486A JP9093486A JPS62247082A JP S62247082 A JPS62247082 A JP S62247082A JP 9093486 A JP9093486 A JP 9093486A JP 9093486 A JP9093486 A JP 9093486A JP S62247082 A JPS62247082 A JP S62247082A
- Authority
- JP
- Japan
- Prior art keywords
- chemical conversion
- heater
- semiconductor device
- liquid
- conversion treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 239000000126 substance Substances 0.000 claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims abstract description 30
- 239000007788 liquid Substances 0.000 claims abstract description 29
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052721 tungsten Inorganic materials 0.000 claims abstract 2
- 239000010937 tungsten Substances 0.000 claims abstract 2
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 239000012670 alkaline solution Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229960004418 trolamine Drugs 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract 5
- 238000007739 conversion coating Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Chemical Treatment Of Metals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野］
この発明は、半導体装置の製造装置、特にその化成処理
膜の製造装置く関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an apparatus for manufacturing semiconductor devices, and in particular to an apparatus for manufacturing chemical conversion films thereof.
第５図は、従来の半導体装置の製造装置を示す断面図で
あり、図において、（１）は半導体クエハ、（２）はこ
の半導体クエハ（１）を垂直に装着したバスケット、（
３）はこのバスケット（２）沈着脱自在に装着されたハ
ンドル、（４）は液（７）溜喪め液槽、（５）は液（７
）を加熱して保温するヒータ％（６）は上記バスケット
（２）を支えるすのこ、（７）は化成処理に必要な化成
処理液である。FIG. 5 is a sectional view showing a conventional semiconductor device manufacturing apparatus. In the figure, (1) is a semiconductor wafer, (2) is a basket in which the semiconductor wafer (1) is mounted vertically, and (
3) is the handle attached to this basket (2) so that it can be deposited and removed freely, (4) is the liquid (7) is the reservoir tank, and (5) is the liquid (7).
) is the heater that heats and keeps it warm. (6) is the drainboard that supports the basket (2), and (7) is the chemical conversion treatment liquid necessary for the chemical conversion treatment.
次に動作について説明する。アルミ又はアルミ合金配線
を施した牛導体りエハ（１）をテア０ンバスケツト（２
）に装着し、バスケット（２）にテア０ンハンドル（３
）を装着しパスグツト（２）を液槽（４）の上方に移動
させる。このとき液（例えば純水）（７）を４０℃以上
の一定温度にヒータ（５）で加熱しておく。次いでハン
ドル（３）をバスケット（２）に装着した状態で半導体
クエハ（１）が完全に液（力に浸るようハンドル（３）
を下降させパスケント（２）をすのこ（６）上に静止さ
せる。数分〜２０分間この状態を保持し、アルミ配線上
に化成処理膜を形成させる。次いでハンドル（３）を用
いて半導体クエハ（１）を装着しているパスグツト（２
）を上昇させクエハ（１）を完全に液から離し化成処理
反応を中心させてスピンドライヤー（図示せず）などを
用いて乾燥させる。Next, the operation will be explained. Place the conductor board (1) with aluminum or aluminum alloy wiring into the tear basket (2).
) and attach the tear handle (3) to the basket (2).
) and move the path plug (2) above the liquid tank (4). At this time, a liquid (for example, pure water) (7) is heated to a constant temperature of 40° C. or higher using a heater (5). Next, with the handle (3) attached to the basket (2), turn the handle (3) so that the semiconductor wafer (1) is completely immersed in the liquid (force).
Lower the Paskent (2) to rest on the drainboard (6). This state is maintained for several minutes to 20 minutes to form a chemical conversion film on the aluminum wiring. Next, use the handle (3) to move the path (2) to which the semiconductor wafer (1) is attached.
) is raised to completely separate Queha (1) from the liquid, centering the chemical conversion reaction, and drying using a spin dryer (not shown) or the like.
〔発明が解決しようとする問題点」
従来の半導体装置の製造装置は以上のように構成されて
いるので、化成処理液を所定温度にしていても、半辱体
りエハを液に浸した直後ではりエバは所定温度になって
おらず化成皮膜厚を精度よとの発明は上記のような問題
点を解消する２ヒめになされたもので、精度よく化成皮
膜を形成できる半導体装置の製造装置を得ることを目的
とする。[Problems to be Solved by the Invention] Conventional semiconductor device manufacturing equipment is configured as described above, so even if the chemical conversion treatment liquid is kept at a predetermined temperature, immediately after immersing the half-circumcised wafer in the liquid, The invention to improve the accuracy of the chemical conversion coating thickness because the temperature of the deburr evaporator is not at the specified temperature was made as a second attempt to solve the above problems, and it is now possible to manufacture semiconductor devices that can form chemical conversion coatings with high precision. The purpose is to obtain equipment.
Ｌ問題点を解決するための手段」
この発明に係る半導体装置の装造装置は、予備加熱器を
設けたものである。Means for Solving Problem L" A semiconductor device assembly apparatus according to the present invention is provided with a preheater.
この発明における予備加熱器は、クエハを所定の化成処
理温度とほぼ同等に予備加熱するので所定の温度で化成
処理できる。The preheater in the present invention preheats the quartz to approximately the same temperature as the predetermined chemical conversion treatment temperature, so that the chemical conversion treatment can be performed at the predetermined temperature.
〔実施例」 以下この発明の一実施例を図について説明する。〔Example" An embodiment of the present invention will be described below with reference to the drawings.
第１図において（１）〜（力は従来と同様である。（８
）は開閉自由なシャッター、（９）は半萼体りエハ（１
）を加熱する遠赤外線ヒータである。In Figure 1, (1) to (forces are the same as before. (8
) is a shutter that can be opened and closed freely, (9) is a half-calyx (1)
) is a far-infrared heater that heats.
次に動作について説明する。シリコンなどの半導体基板
上にアルミまたはアルミ合金を施した牛導体りエハ（１
）をテフロンなどの材料でつくられたパスゲット（２）
に垂直に複数枚装着する。次いでハンドル（３）をバス
ケット（２）に装着して化成処理液（７）上部の予備加
熱器（９）まで移動させる。このとき化成処理液（７）
はあらかじめヒータ（５）で任意の温度例えば１００℃
に加熱しておき、シャッター（８）も閉じた状態にして
おく。次いで予備加熱器（９）でクエハ（１）を１００
±５℃になるまで加熱する。次いでシャッター（８）を
関きクエハ全部が液に浸るようバスケットをすのこ（６
）上に静止させ、ハンドル（３）をはずしてシャッター
（８）を閉じ数分〜２０分間処理を加える。処理を終え
たらシャッター（８）を開きハンドル（３）をパスゲッ
ト（２）に装着し、バスケット（２）を液（７）より上
げシャッター（８）を閉じ反応を終了させ、スピンドラ
イヤー（図示せず）などを用いて乾燥させる。Next, the operation will be explained. A conductor wafer (1) made of aluminum or aluminum alloy on a semiconductor substrate such as silicon.
) made of materials such as Teflon (2)
Attach multiple sheets perpendicularly to the Next, the handle (3) is attached to the basket (2) and moved to the preheater (9) above the chemical conversion treatment liquid (7). At this time, chemical conversion treatment liquid (7)
is set in advance to an arbitrary temperature, for example 100°C, using a heater (5).
The shutter (8) is also kept closed. Then, in the preheater (9), add 100% of Queja (1).
Heat until temperature is ±5℃. Next, close the shutter (8) and place the basket on a drainboard (6
), remove the handle (3), close the shutter (8), and process for several to 20 minutes. When the treatment is finished, open the shutter (8), attach the handle (3) to the path get (2), raise the basket (2) above the liquid (7), close the shutter (8) to finish the reaction, and then use the spin dryer (Fig. (not shown).
尚、上記実施例ではシャッター（８）は液槽（４）に接
触しｌこ状態となっていたが第２図に示すようにクエハ
（１）を液（７）の蒸気から防ぐ形になっていれば接触
していなくてもよい。また、上記実施例ではヒータ（５
）を液（７）中設けたが第２図のように液槽（４）外部
に設けてもよい。また、上記実施例では、予備加熱器を
遠赤外線ヒータとしたが赤外線ヒータや他の加熱装置で
あってもよい。In the above embodiment, the shutter (8) was in contact with the liquid tank (4), but as shown in Figure 2, it is now designed to protect the liquid (1) from the vapor of the liquid (7). There is no need for contact as long as the In addition, in the above embodiment, the heater (5
) is provided in the liquid (7), but it may also be provided outside the liquid tank (4) as shown in FIG. Further, in the above embodiment, the preheater is a far-infrared heater, but an infrared heater or other heating device may be used.
また、上記実施例ではシャッター（８）を投けて低温で
クエハ（１）と液（７）蒸気との反応を防いだが、第３
図に示すように予備加熱器（９）を蒸気の影響を受けな
い場所、即ち液槽（４）の側方に設けて、そこで予備加
熱してから化成処理を行う構造でもよい。In addition, in the above embodiment, the shutter (8) was provided to prevent the reaction between the quefer (1) and the liquid (7) vapor at low temperatures, but the third
As shown in the figure, the preheater (9) may be provided in a place not affected by steam, that is, on the side of the liquid tank (4), and the chemical conversion treatment may be performed after preheating there.
また、第４図に示すように化成処理に飽和水蒸気やアン
モニア水およびトリエタノールアミン溶液の雰囲気など
を使用した場合の半導体装置の製造装置でもよい。Further, as shown in FIG. 4, a semiconductor device manufacturing apparatus may be used in which an atmosphere of saturated steam, aqueous ammonia, and triethanolamine solution is used for chemical conversion treatment.
即ち、第４図において（２１）は半導体クエハ、（２２
）は予備加熱器％ （２３）は化成処理器、（２３）ａ
は化成処理雰囲気収入パルプ、（２３） ｂは化成処理
雰囲気吸出パルプ、（２４）は乾燥器である、次にこの
動作について説明する。アルミニウムシリコン（合金）
を配線に施した半導体クエハ（２１）を図中左の搬送系
に設置する。次に予備加熱器（２２） Ｋ搬送して１０
０±５℃に予備加熱する。次いで化成処理器（２３）に
半導体クエハ（１）を搬送して後、化成処理雰囲気取入
バルブ（２３） ａを開いて１００℃の飽和水蒸気をと
り入れ数分〜２０分間化成処理してアルミシリコン配線
上に数１ｏｏｏ Ｘの化成皮膜を形成できる。次いで雰
囲気収入バルブ（Ｚ３）ａをしめその後雰囲気吸出バル
ブ（２３） ｂ ｆ、囲は雰囲気を抜いてから雰囲気奴
出パルプ（２３） ｂを閉める。次いて乾燥器（２４）
に半導体クエハ（２１）を搬送させフェノ・（２１）を
回転させ乾燥させる。このように半導体クエハを１枚１
枚処理する構造の半導体装置の製造装置でもよい。That is, in FIG. 4, (21) is a semiconductor wafer, (22
) is preheater% (23) is chemical conversion treatment equipment, (23)a
(23) b is the chemical conversion treatment atmosphere suction pulp, (24) is the dryer. Next, this operation will be explained. Aluminum silicon (alloy)
A semiconductor wafer (21) with wiring applied to it is installed in the transport system on the left side of the figure. Next, transport the preheater (22) to 10
Preheat to 0±5°C. Next, after transporting the semiconductor wafer (1) to the chemical conversion treatment device (23), open the chemical conversion treatment atmosphere intake valve (23) a to take in saturated steam at 100°C and perform chemical conversion treatment for several minutes to 20 minutes to form aluminum silicon. A chemical conversion film of several 100 X can be formed on the wiring. Next, close the atmosphere inlet valve (Z3) a, then close the atmosphere suction valve (23) b f, and after removing the atmosphere, close the atmosphere suction valve (23) b. Next, the dryer (24)
The semiconductor wafer (21) is transported and the phenol (21) is rotated and dried. In this way, one semiconductor wafer is
It may also be a manufacturing apparatus for semiconductor devices having a structure of processing semiconductor devices.
〔発明の効果］
以上のように、この発明によれば、予備加熱器を化ｆｉ
１．処理器に設けたので所定の温度で化成処理できるよ
うになった。そのため精度の高い化成皮膜厚が得らる効
果がある。[Effects of the Invention] As described above, according to the present invention, the preheater can be converted into
1. Since it is installed in a processing device, chemical conversion treatment can now be performed at a predetermined temperature. Therefore, there is an effect that highly accurate chemical conversion coating thickness can be obtained.
＄１図この発明の一実施例による半導体装置の製造装置
の断面側面図、￥Ｊ２，３．４図はこの発明の他の実施
例を示す半導体装置の製造装置の断２図、上面図、断面
側面図、第５図は従来の半導体装置の製造装置を示す断
面図である。
（７）は化成処理液、（８）はシャッター、（９）は遠
赤外線ヒータ、（２２）は予備加熱器、（２３）は化成
処理器。
尚、図中、同一符号は同一、又は相当部分を示す。Figure 1: A cross-sectional side view of a semiconductor device manufacturing apparatus according to an embodiment of the present invention, ¥J2, 3.4 Figures: 2 cross-sectional views and a top view of a semiconductor device manufacturing apparatus according to another embodiment of the present invention, A cross-sectional side view, FIG. 5 is a cross-sectional view showing a conventional semiconductor device manufacturing apparatus. (7) is a chemical conversion treatment liquid, (8) is a shutter, (9) is a far-infrared heater, (22) is a preheater, and (23) is a chemical conversion treatment device. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (6)
器とを備えたことを特徴とする半導体装置の製造装置。(1) A semiconductor device manufacturing apparatus characterized by comprising a container for storing a chemical conversion treatment liquid or an atmosphere and a preheater.
自由なシャッターを備えたことを特徴とする特許請求の
範囲第１項記載の半導体装置の製造装置。(2) The semiconductor device manufacturing apparatus according to claim 1, further comprising a shutter that can be freely opened and closed between the preheater and the chemical conversion treatment liquid or atmosphere.
ことを特徴とする特許請求の範囲第１項又は第２項に記
載の半導体装置の製造装置。(3) The semiconductor device manufacturing apparatus according to claim 1 or 2, which is capable of processing either a single semiconductor device or a plurality of semiconductor devices.
ングステンヒータの何れか又はそれらの組合せであるこ
とを特徴とする特許請求の範囲第１〜３項の何れかに記
載の半導体装置の製造装置。(4) The semiconductor device manufacturing apparatus according to any one of claims 1 to 3, wherein the preheater is any one of a far infrared heater, an infrared heater, a tungsten heater, or a combination thereof. .
モニア水やトリ・エタノール・アミン溶液などの酸・ア
ルカリ溶液又はそれらの雰囲気の何れかであることを特
徴とする特許請求の範囲第１〜４項の何れかに記載の半
導体装置の製造装置。(5) Claim 1, characterized in that the chemical conversion treatment liquid or atmosphere is pure water, saturated steam, an acid/alkaline solution such as aqueous ammonia or tri-ethanol-amine solution, or an atmosphere thereof. 4. The semiconductor device manufacturing apparatus according to any one of items 4 to 4.
、タンタル等の不動態金属など、およびそれらを主体と
する合金を施していることを特徴とする特許請求の範囲
第１〜５項の何れかに記載の半導体装置の製造装置(6) The semiconductor device is coated with a passive metal such as aluminum, nickel, titanium, or tantalum, or an alloy mainly composed of these metals. Manufacturing equipment for the semiconductor device described above
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9093486A JPS62247082A (en) | 1986-04-18 | 1986-04-18 | Apparatus for producing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9093486A JPS62247082A (en) | 1986-04-18 | 1986-04-18 | Apparatus for producing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62247082A true JPS62247082A (en) | 1987-10-28 |
Family
ID=14012276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9093486A Pending JPS62247082A (en) | 1986-04-18 | 1986-04-18 | Apparatus for producing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62247082A (en) |
-
1986
- 1986-04-18 JP JP9093486A patent/JPS62247082A/en active Pending
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