JPS61152020A - Processor - Google Patents
ProcessorInfo
- Publication number
- JPS61152020A JPS61152020A JP27308284A JP27308284A JPS61152020A JP S61152020 A JPS61152020 A JP S61152020A JP 27308284 A JP27308284 A JP 27308284A JP 27308284 A JP27308284 A JP 27308284A JP S61152020 A JPS61152020 A JP S61152020A
- Authority
- JP
- Japan
- Prior art keywords
- processing chamber
- wafer
- chamber
- steam
- opened
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 11
- 239000007788 liquid Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 2
- 230000008016 vaporization Effects 0.000 abstract 2
- 239000011364 vaporized material Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 30
- 238000001035 drying Methods 0.000 description 19
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 239000012530 fluid Substances 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BKCJZNIZRWYHBN-UHFFFAOYSA-N Isophosphamide mustard Chemical compound ClCCNP(=O)(O)NCCCl BKCJZNIZRWYHBN-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、処理技術、特に半導体装置の製造において、
ウェハの蒸気乾燥に用いて有効な技術に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for processing technology, particularly for manufacturing semiconductor devices.
This article relates to effective techniques for use in steam drying wafers.
半導体装置の製造過程において、たとえばウェハの酸化
拡散前洗浄工程では、純水による洗浄作業の後にウェハ
の表面に残留する水滴などを除去するため蒸気乾燥が行
われる。In the manufacturing process of semiconductor devices, for example, in a wafer pre-oxidation diffusion cleaning process, steam drying is performed to remove water droplets remaining on the wafer surface after cleaning with pure water.
この蒸気乾燥に用いられる蒸気乾燥装置としては次のジ
なものが考えられる・
すなわち、処理室の底部に貯留される、たとえばイソプ
ロピルアルコールなどの有機溶剤を加熱することによっ
て有機溶剤の蒸気（以下単に蒸気と記す）を発生させ、
有機溶剤の液面上方に形成される蒸気雰囲気中に蒸気よ
りも温度の低いウェハを位置させる。The following types of steam drying equipment can be considered for this steam drying: In other words, by heating an organic solvent such as isopropyl alcohol stored at the bottom of the processing chamber, organic solvent vapor (hereinafter simply referred to as (denoted as steam) is generated,
A wafer whose temperature is lower than that of the vapor is placed in a vapor atmosphere formed above the liquid level of the organic solvent.
このとき、ウェハ表面に付着する水滴は、ウェハ表面に
触れる蒸気が凝縮して形成される有機溶剤の液滴に溶解
されて落下し除去される。At this time, the water droplets adhering to the wafer surface are dissolved into organic solvent droplets formed by condensation of vapor touching the wafer surface, fall, and are removed.
このようにして、ウェハが蒸気雰囲気とほぼ同じ温度に
なるまで蒸気雰囲気中に位置させ乾燥状態とするもので
ある。In this way, the wafer is placed in the steam atmosphere and dried until it reaches approximately the same temperature as the steam atmosphere.
しかしながら、上記のような乾燥装置では、ウェハの処
理室への挿入あるいは取り出し操作などの際に、処理室
内の引火性の蒸気が装置の外部に散逸されることは避け
られず、火災発生などの危険があることを本発明者は見
いだした。However, in the drying equipment described above, when a wafer is inserted into or taken out from the processing chamber, flammable vapor inside the processing chamber is inevitably dissipated to the outside of the equipment, which can lead to fires and other problems. The inventor has discovered that there is a danger.
さらに、蒸気が有毒である場合には、作業者の健康を損
なうなどの不具合もある。Furthermore, if the steam is toxic, there may be problems such as damage to the health of workers.
° なお、ウェハの蒸気乾燥については、たとえば特
願昭５７−８９６６４号および同５７−２１６９２５号
に開示されている。Note that steam drying of wafers is disclosed, for example, in Japanese Patent Application No. 57-89664 and No. 57-216925.
本発明の目的は、被処理物を物質の蒸気によって安全に
処理することが可能な処理技術を提供することにある。An object of the present invention is to provide a treatment technique that allows a workpiece to be safely treated with vapor of a substance.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、被処理物が位置される処理室と、物質の蒸気
を発生させる蒸気室とが、開閉自在なシャッタ機構によ
って分離される構造とすることにより、処理時に前記シ
ャッタ機構を開放し、蒸気室において発生される蒸気が
処理室に供給されるようにして、処理室への被処理物の
出し入れに際して蒸気が外部に散逸することを防止し、
被処理物の安全な処理を可能にするものである。That is, by adopting a structure in which the processing chamber in which the object to be processed is located and the steam chamber in which the vapor of the substance is generated are separated by a shutter mechanism that can be opened and closed, the shutter mechanism is opened during processing and the steam chamber is closed. The steam generated in is supplied to the processing chamber to prevent the steam from escaping to the outside when the material to be processed is taken in and out of the processing chamber,
This enables safe processing of objects to be processed.
第１図は本発明の一実施例であるウェハの蒸気乾燥装置
の略断面図を示すもので、蒸気室１の底部にはヒータ２
が設けられ、蒸気室１の底部側面に接続された処理液供
給パイプ３を通じて蒸気室１の底部に供給される所定量
のイソプロピルアルコール４（物質）（以下ＩＰＡと記
す）が加熱されＩＰＡ蒸気４ａが発生される構造とされ
ている。FIG. 1 shows a schematic cross-sectional view of a wafer steam drying apparatus which is an embodiment of the present invention.
A predetermined amount of isopropyl alcohol 4 (substance) (hereinafter referred to as IPA) supplied to the bottom of the steam chamber 1 through the processing liquid supply pipe 3 connected to the bottom side of the steam chamber 1 is heated to produce IPA vapor 4a. It is said that the structure is such that it is generated.
さらに蒸気室１に隣接して処理室５が設けられており、
蒸気室１と処理室５は上下方向に移動されることによっ
て開閉自在なシャッタ機構６によって仕切られ、適時に
シャッタ機構６が開放されることによって、蒸気室ｌ内
のＩＰＡ蒸気４ａが処理室５内に供給され、処理室５内
がＩＰＡＭ気４ａの雰囲気とされるように構成されてい
る。Furthermore, a processing chamber 5 is provided adjacent to the steam chamber 1,
The steam chamber 1 and the processing chamber 5 are separated by a shutter mechanism 6 that can be opened and closed by moving vertically, and when the shutter mechanism 6 is opened at the appropriate time, the IPA vapor 4a in the steam chamber 1 is transferred to the processing chamber 5. The processing chamber 5 is configured to have an atmosphere of IPAM gas 4a.
また、処理室５の上部には扉７が開閉自在に設けられ、
搬送治具８に収納されたウェハ９（被処理物）の処理室
５への出し入れが行われる構造とされている。Further, a door 7 is provided in the upper part of the processing chamber 5 so as to be openable and closable.
The structure is such that a wafer 9 (workpiece) stored in a transport jig 8 is taken in and out of the processing chamber 5 .
処理室５内に挿入される搬送治具８に収納されたウェハ
９は係止治具１０によって処理室５内の所定の位置に保
持されるように構成されている。A wafer 9 housed in a transport jig 8 inserted into the processing chamber 5 is configured to be held at a predetermined position within the processing chamber 5 by a locking jig 10 .
さらに、処理室５の上部には洗浄ノズル１１が設けられ
、シャフタ機構６が閉止された状態で、処理室５内に位
置されたウェハ９に、たとえば純水などが噴射されて洗
浄処理が行われる構造とされている。Furthermore, a cleaning nozzle 11 is provided in the upper part of the processing chamber 5, and with the shutter mechanism 6 closed, pure water or the like is sprayed onto the wafer 9 placed in the processing chamber 5 to perform a cleaning process. It is said that the structure is
処理室５の上部側面にはダクト１２および、このダクト
１２を開閉するダンパ機構１３が設けられ、適時に処理
室５内の排気が行われるように構成されている。A duct 12 and a damper mechanism 13 for opening and closing the duct 12 are provided on the upper side of the processing chamber 5, and the processing chamber 5 is configured to be evacuated in a timely manner.
また、処理室５の底面にはドレンパイプ１４が設けられ
、ウェハ９の洗浄処理に用いられた水や、洗浄処理後の
乾燥処理において、ＩＰＡ蒸気４ａが凝縮して形成され
るＩＰＡ４が処理室５の外部に排出される構造とされて
いる。A drain pipe 14 is provided at the bottom of the processing chamber 5, and water used for cleaning the wafer 9 and IPA4 formed by condensation of IPA vapor 4a during the drying process after the cleaning process are drained into the processing chamber. It is designed to be discharged to the outside of the 5.
この場合、ドレンパイプ１４には、たとえば三方弁１５
が設けられ、ドレンパイプ１４を適宜排水パイプ１６ま
たはＩＰＡ排出バイブ１７に接続することによって、洗
浄処理に用いられた水と蒸気乾燥処理に用いられたＩＰ
Ａ４とが分離されて回収されるように構成されている。In this case, the drain pipe 14 has a three-way valve 15, for example.
By connecting the drain pipe 14 to the drain pipe 16 or IPA discharge vibe 17 as appropriate, the water used in the cleaning process and the IP used in the steam drying process can be separated.
A4 is separated and collected.
蒸気室１の上部には、窒素パージノズル１８が設けられ
、蒸気室１内に窒素ガスを噴出させることによって、蒸
気室ｌ内に形成されたＩＰＡ蒸気４ａが迅速に処理室５
内に供給される構造とされている。A nitrogen purge nozzle 18 is provided in the upper part of the steam chamber 1, and by spouting nitrogen gas into the steam chamber 1, the IPA vapor 4a formed in the steam chamber 1 is quickly transferred to the processing chamber 5.
The structure is such that it is supplied internally.
蒸気室ｌの上部には冷却機構１９が設けられ、蒸気室１
の上部に残留されるＩＰＡ蒸気４が凝縮されて蒸気室ｌ
の底部に回収されるように構成されている。A cooling mechanism 19 is provided in the upper part of the steam chamber 1.
The IPA vapor 4 remaining in the upper part of the chamber is condensed and
It is configured to be collected at the bottom of the
さらに、蒸気室１およびこの蒸気室１に隣接される処理
室５の外周部には、流体循環ノズル２０および２１を通
じて、所定の温度の流体が流通される流体ジャケット２
２（温度保持手段）が設けられ、蒸気室ｌおよび処理室
５が所定の温度に保持される構造とされている。Furthermore, a fluid jacket 2 is provided around the outer periphery of the steam chamber 1 and the processing chamber 5 adjacent to the steam chamber 1, through which fluid at a predetermined temperature is circulated through fluid circulation nozzles 20 and 21.
2 (temperature holding means) is provided to maintain the steam chamber 1 and the processing chamber 5 at a predetermined temperature.
次に、本実施例の作用について説明する。Next, the operation of this embodiment will be explained.
まず、扉７が開放され搬送治具８に収納されたウェハ９
が処理室５内に挿入されて係止治具ｌＯに固定され、そ
の後扉７は閉止される。First, the door 7 is opened and the wafer 9 stored in the transport jig 8
is inserted into the processing chamber 5 and fixed to the locking jig lO, and then the door 7 is closed.
この時、蒸気室１と処理室５との間にあるシャッタ機構
６およびダクト１２のダンパ１３は閉止されている。At this time, the shutter mechanism 6 and the damper 13 of the duct 12 located between the steam chamber 1 and the processing chamber 5 are closed.
次に、処理室５の上部に設けられた洗浄ノズル１１から
洗浄水がウェハ９に噴射されて洗浄処理が行われる。Next, cleaning water is sprayed onto the wafer 9 from a cleaning nozzle 11 provided at the top of the processing chamber 5 to perform a cleaning process.
この場合、ドレンパイプ１４に設けられた三方弁１５は
排水パイプ１６に連通され、洗浄水が回収される。In this case, the three-way valve 15 provided on the drain pipe 14 is communicated with the drain pipe 16, and the wash water is recovered.
所定の時間経過後、洗浄ノズル１１からの洗浄水の放出
は停止される。After a predetermined period of time has elapsed, the discharge of cleaning water from the cleaning nozzle 11 is stopped.
次に、ダクト１２のダンパ１３が開放され処理室５内の
排気が行われて、処理室５は負圧にされる。Next, the damper 13 of the duct 12 is opened and the inside of the processing chamber 5 is evacuated, and the processing chamber 5 is brought into negative pressure.
一方、上記の排気操作と同時に、蒸気室１の底部に、処
理液供給パイプ３を通じて所定量のＩＰＡ４が注入され
、ヒータ２によって加熱されてＩＰＡ蒸気４ａが形成さ
れる。Meanwhile, simultaneously with the above exhaust operation, a predetermined amount of IPA 4 is injected into the bottom of the steam chamber 1 through the processing liquid supply pipe 3 and heated by the heater 2 to form IPA vapor 4a.
次に、シャフタ機構６は開放され、同時に窒素パージノ
ズル１８から窒素ガスが噴射されて蒸気室ｌ内のＩＰＡ
蒸気４ａは迅速に処理室５内に供給される。Next, the shutter mechanism 6 is opened, and at the same time nitrogen gas is injected from the nitrogen purge nozzle 18 to remove the IPA in the steam chamber l.
Steam 4a is quickly supplied into processing chamber 5.
所定の時間経過後、窒素パージノズル１８からの窒素ガ
スの噴射が停止されるとともに、処理室５に設けられた
ダクト１２のダンパ１３は閉止され、処理室５内に位置
されるウェハ９はＩＰＡ蒸気４ａの雰囲気中に置かれる
。After a predetermined period of time has elapsed, the injection of nitrogen gas from the nitrogen purge nozzle 18 is stopped, the damper 13 of the duct 12 provided in the processing chamber 5 is closed, and the wafer 9 located in the processing chamber 5 is filled with IPA vapor. Placed in an atmosphere of 4a.
この時、ウェハ９の表面ではＩＰＡ蒸気４ａが凝縮され
て無数の液滴が形成され、ウェハ９の表面に付着される
水分はこれらの液滴に溶解され、処理室５の底部に落下
除去される。At this time, the IPA vapor 4a is condensed on the surface of the wafer 9 to form countless droplets, and the moisture adhering to the surface of the wafer 9 is dissolved in these droplets, which fall to the bottom of the processing chamber 5 and are removed. Ru.
上記の乾燥過程は、ウェハ９が雰囲気のＩＰＡ蒸気４ａ
と同一の温度になるまで繰り返し行われてウェハ９は蒸
気乾燥される。In the above drying process, the wafer 9 is exposed to IPA vapor 4a in the atmosphere.
The wafer 9 is steam-dried by repeating this process until the temperature reaches the same temperature as the wafer 9.
また、上記の乾燥処理中、ドレンパイプ１４に設けられ
た三方弁１５はＩＰＡ排出パイプ１７に接続され、処理
済みのＩＰＡ４は回収される。Further, during the above drying process, the three-way valve 15 provided on the drain pipe 14 is connected to the IPA discharge pipe 17, and the processed IPA4 is recovered.
所定の時間経過後、シャッタ機構６が閉止されるととも
に、ダクト１２のダンパ機構１３は開放され、処理室５
内に残留されるＩＰＡ蒸気４ａは速やかに装置外部の所
定部（図示せず）に排出され、たとえば冷却されるなど
して凝縮され、回収される。After a predetermined period of time has elapsed, the shutter mechanism 6 is closed, and the damper mechanism 13 of the duct 12 is opened, so that the processing chamber 5
The IPA vapor 4a remaining inside the device is immediately discharged to a predetermined part (not shown) outside the device, cooled, condensed, and recovered.
次に、扉７は開放され、ウェハ９は搬送治具８とともに
装置外部に取り出され、−回の洗浄および蒸気乾燥処理
が完了される。Next, the door 7 is opened, the wafer 9 is taken out of the apparatus together with the transport jig 8, and - times of cleaning and steam drying processing are completed.
このように、ＩＰＡ蒸気４ａが発生される蒸気室ｌと洗
浄および乾燥処理が行われる処理室５がシャッタ機構６
によって分離され、シャッタ機構６は処理室５における
蒸気乾燥処理時に開放されるため、処理室５へのウェハ
９の出し入れの際に、ＩＰＡ蒸気４ａが外部に散逸され
ることが防止され、引火性のＩＰＡ蒸気４ａによる火災
の発生などの危険が回避でき、安全にウェハ９の蒸気乾
燥処理が行われる。In this way, the steam chamber l where IPA vapor 4a is generated and the processing chamber 5 where cleaning and drying processing are performed are connected to the shutter mechanism 6.
Since the shutter mechanism 6 is opened during the steam drying process in the processing chamber 5, the IPA vapor 4a is prevented from dissipating to the outside when the wafer 9 is taken in and out of the processing chamber 5, and the flammable The danger of fire caused by the IPA vapor 4a can be avoided, and the vapor drying process of the wafer 9 can be performed safely.
さらに、蒸気室ｌおよび処理室５が、所定の温度の流体
が流通される流体ジャケット２２によつて所定の温度に
保持されることにより、たとえば、処理室５の内壁部な
どにおいてＩＰＡ薫気４ａが凝縮されることが防止され
、処理室５内に位置されるウェハ９にＩＰＡ蒸気４ａが
効率良（供給されて、蒸気乾燥処理が効率良く行われる
。Furthermore, the steam chamber 1 and the processing chamber 5 are maintained at a predetermined temperature by the fluid jacket 22 through which fluid at a predetermined temperature flows, so that, for example, the IPA fume 4a is emitted from the inner wall of the processing chamber 5. The IPA vapor 4a is efficiently supplied to the wafer 9 located in the processing chamber 5, and the vapor drying process is efficiently performed.
また、処理液供給パイプ３を通じて蒸気室１の底部に供
給されるＴＰＡ４の量は、−回の蒸気乾燻処理毎に必要
な量だけであり、ヒータ２によるＩ ＰＡ４の加熱昇温
が迅速となり、ＩＰＡ蒸気４ａの発生に要する時間が短
縮され、さらに装置内に不要なＩＰＡ４などの引火性の
有機溶剤が多量に貯留されることがなく安全である。In addition, the amount of TPA4 supplied to the bottom of the steam chamber 1 through the treatment liquid supply pipe 3 is only the amount required for each steam dry-smoking process, and the heating temperature of the IPA4 by the heater 2 can be quickly raised. The time required to generate the IPA vapor 4a is shortened, and a large amount of unnecessary flammable organic solvents such as IPA4 are not stored in the device, making it safe.
上記の一連の操作を繰り返すことによって、多数のウェ
ハ９の洗浄および蒸気乾燥処理が安全に効率良く行われ
る。By repeating the above series of operations, cleaning and steam drying of a large number of wafers 9 can be performed safely and efficiently.
［効果］
（ｌ）、被処理物が位置される処理室と、物質の蒸気を
発生させる蒸気室とが、開閉自在なシャフタ機構によっ
て分離されているため、被処理物の処理室への出し入れ
操作に伴って蒸気が外部に散逸することが防止され、蒸
気の引火などによる火災発生が回避される。[Effects] (l) The processing chamber where the object to be processed is located and the steam chamber where the vapor of the substance is generated are separated by a shutter mechanism that can be opened and closed, making it easier to take the object into and out of the processing chamber. Steam is prevented from escaping to the outside during operation, and fires caused by ignition of steam are avoided.
（２）、処理室および蒸気室に温度保持手段が設けられ
ていることにより、処理室の内壁部において物質の蒸気
が凝縮されることが防止され、処理室内の被処理物に効
率良く蒸気が供給される結果、被処理物の処理が効率良
く行われる。(2) By providing a temperature maintaining means in the processing chamber and the steam chamber, the vapor of the substance is prevented from condensing on the inner wall of the processing chamber, and the steam is efficiently delivered to the object to be processed in the processing chamber. As a result of the supply, the processing of the object to be processed is performed efficiently.
（３）、処理室における各処理毎に蒸気室に所定量の物
質が供給されることにより、蒸気室における物質の加熱
昇温か迅速に行われ、物質の蒸気化に要する時間が短く
なるため、処理工程の稼働率が向上される。(3) By supplying a predetermined amount of the substance to the steam chamber for each process in the processing chamber, the heating of the substance in the steam chamber can be done quickly, and the time required to vaporize the substance can be shortened. The operating rate of the treatment process is improved.
（４）、前記（３）の結果、装置内に多量の物質が貯留
されることがなく、物質に引火して火災が発生するなど
の危険が回避される。(4) As a result of (3) above, a large amount of substance is not stored in the device, and the danger of igniting the substance and causing a fire is avoided.
（５）、前記（１）、 （４１の結果、処理が安全に行
われる。(5) As a result of (1) and (41) above, the processing is performed safely.
以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.
たとえば、有機溶剤としてはイソプロピルアルコール以
外のものを用いてもよい。For example, organic solvents other than isopropyl alcohol may be used.
また温度保持手段としては、電熱線等を用いることも可
能である。Moreover, it is also possible to use a heating wire or the like as the temperature maintaining means.
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるウェハの蒸気乾燥技
術に適用した場合について説明したが、それに限定され
るものではなく、たとえば、気相エツチング技術等にも
応用することが可能である。The above explanation has mainly been about the application of the invention made by the present inventor to wafer vapor drying technology, which is the background field of application, but the invention is not limited to this, for example, vapor phase etching technology. It is also possible to apply this method to
第１図は本発明の一実施例であるウェハの蒸気乾燥装置
の略断面図である。
１・・・蒸気室、２・・・ヒータ、３・・・処理液供給
パイプ、４・・・イソプロピルアルコール（物質）、４
ａ・・・イソプロピルアルコール蒸気、５・・・処理室
、６・・・シャッタ機構、７・・・扉、８・・・搬送治
具、９・・・ウェハ（被処理物）、２２・・・流体ジャ
ケット（温度保持手段）。FIG. 1 is a schematic cross-sectional view of a wafer steam drying apparatus according to an embodiment of the present invention. 1... Steam chamber, 2... Heater, 3... Processing liquid supply pipe, 4... Isopropyl alcohol (substance), 4
a...Isopropyl alcohol vapor, 5...Processing chamber, 6...Shutter mechanism, 7...Door, 8...Transportation jig, 9...Wafer (workpiece), 22...・Fluid jacket (temperature maintenance means).
Claims (1)
位置させることによって所定の処理を施す処理装置であ
って、被処理物が位置される処理室と、物質の蒸気を発
生させる蒸気室とが、開閉自在なシャッタ機構によって
分離されていることを特徴とする処理装置。 ２、処理室および蒸気室に温度保持手段が設けられてい
ることを特徴とする特許請求の範囲第１項記載の処理装
置。 ３、処理室における各処理毎に蒸気室に所定量の物質が
供給されることを特徴とする特許請求の範囲第１項記載
の処理装置。 ４、被処理物がウェハであることを特徴とする特許請求
の範囲第１項記載の処理装置。[Claims] 1. A processing apparatus that performs a predetermined process by placing an object to be processed in an atmosphere of vapor of at least one substance, which includes a processing chamber in which the object to be processed is placed, and a vapor atmosphere of the substance. A processing device characterized in that a steam chamber that generates steam is separated by a shutter mechanism that can be opened and closed. 2. The processing apparatus according to claim 1, wherein temperature maintaining means is provided in the processing chamber and the steam chamber. 3. The processing apparatus according to claim 1, wherein a predetermined amount of substance is supplied to the steam chamber for each process in the processing chamber. 4. The processing apparatus according to claim 1, wherein the object to be processed is a wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27308284A JPS61152020A (en) | 1984-12-26 | 1984-12-26 | Processor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27308284A JPS61152020A (en) | 1984-12-26 | 1984-12-26 | Processor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61152020A true JPS61152020A (en) | 1986-07-10 |
Family
ID=17522891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27308284A Pending JPS61152020A (en) | 1984-12-26 | 1984-12-26 | Processor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61152020A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03169013A (en) * | 1989-11-24 | 1991-07-22 | Cfm Technol Inc | Surface dry treatment and its device |
| JPH05212361A (en) * | 1992-01-31 | 1993-08-24 | Japan Field Kk | Method and apparatus for rinsing object to be washed |
| US5431179A (en) * | 1993-02-16 | 1995-07-11 | Tokyo Electron Limited | Wafer drying apparatus and fire-extinguishing method therefor |
| US6319329B1 (en) | 1997-01-24 | 2001-11-20 | Tokyo Electron Limited | Method of cleaning objects to be processed |
| US7404407B2 (en) * | 2001-07-16 | 2008-07-29 | Tokyo Electron Limited | Substrate processing apparatus |
-
1984
- 1984-12-26 JP JP27308284A patent/JPS61152020A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03169013A (en) * | 1989-11-24 | 1991-07-22 | Cfm Technol Inc | Surface dry treatment and its device |
| JPH05212361A (en) * | 1992-01-31 | 1993-08-24 | Japan Field Kk | Method and apparatus for rinsing object to be washed |
| US5431179A (en) * | 1993-02-16 | 1995-07-11 | Tokyo Electron Limited | Wafer drying apparatus and fire-extinguishing method therefor |
| US6319329B1 (en) | 1997-01-24 | 2001-11-20 | Tokyo Electron Limited | Method of cleaning objects to be processed |
| US6491045B2 (en) | 1997-01-24 | 2002-12-10 | Tokyo Electron Limited | Apparatus for and method of cleaning object to be processed |
| US7404407B2 (en) * | 2001-07-16 | 2008-07-29 | Tokyo Electron Limited | Substrate processing apparatus |
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