JPS60140829A - Production equipment for semiconductor device - Google Patents

Production equipment for semiconductor device

Info

Publication number
JPS60140829A
JPS60140829A JP25005283A JP25005283A JPS60140829A JP S60140829 A JPS60140829 A JP S60140829A JP 25005283 A JP25005283 A JP 25005283A JP 25005283 A JP25005283 A JP 25005283A JP S60140829 A JPS60140829 A JP S60140829A
Authority
JP
Japan
Prior art keywords
wafer
tank
boiling
steam
temperature steam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25005283A
Other languages
Japanese (ja)
Inventor
Shinpei Tanaka
田中　伸平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP25005283A priority Critical patent/JPS60140829A/en
Publication of JPS60140829A publication Critical patent/JPS60140829A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To improve the cleaning effect of a wafer by giving the wafer high- temperature steam when the wafer is shifted into a washing tank from a heating-solution treating tank. CONSTITUTION:A solution such as an aqueous solution of persulfuric acid is stored in a boiling tank 1, and heated by a heater 2. Pure water is injected continuously into a rinsing tank 3. Steam tanks 5, 5', which heat stored water by heaters 4, 4 and generate high-temperature steam, are mounted. The steam tanks 5, 5' have nozzle-shaped sections 6, 6' in upper sections. A wafer 7 is held by a holder such as a wafer holder 8 made of quartz, dipped in the boiling tank 1, and acid-boiling treated at 80-150 deg.C. The wafer 7 is extracted into atmospheric air from the boiling tank 1 for rising. High-temperature steam 9 is blown against the wafer 7 from the nozzle-shaped sections 6, 6' in the steam tanks 5, 5' and the wafer 7 is transported in high-temperature steam 9 to the rinsing tank 3 from the boiling tank 1 in a transport path for the wafer 7 to the rising tank 3 from the boiling tank 1 at that time.

Description

【発明の詳細な説明】 （１）発明の技術分野 本発明は、ウェハのクリーニング処理に係り。[Detailed description of the invention] (1) Technical field of the invention The present invention relates to wafer cleaning processing.

特にウェハをボイル処理槽より取り出す際にウェハに不
純物が４１着しないようにした半導体装置の製造装置に
関する。In particular, the present invention relates to a semiconductor device manufacturing apparatus that prevents impurities from adhering to the wafer when the wafer is taken out of the boiling tank.

（２）技術の背景 ウェハに酸化膜を形成したり、あるいは熱拡散を行なう
場合のように、ウェハを熱処理する工程の前段において
は、ウェハをクリーニングしな＋３ればならない。これ
は、ウェハに不純物がイ；］着していると、加熱時にウ
ェハ内に不純物が混入しててしまうからである。この不
純物とは、ウェハをクリーニング処理する際の薬品の中
に混入しているものや空気中のゴミ等がある。クリーニ
ング処理としては、過酸化水素とアンモニアの溶液中で
８０°Ｃに加熱後アルカリ洗浄するＲＣＡ処理や硝酸や
過硫酸の／８液中で８０°Ｃ〜１５０°Ｃにて加熱する
酸ボイルなどが知られている。(2) Background of the Technology When forming an oxide film on a wafer or performing thermal diffusion, the wafer must be cleaned before the process of heat treating the wafer. This is because if the wafer is contaminated with impurities, the impurities will be mixed into the wafer during heating. These impurities include substances mixed in chemicals used during wafer cleaning processing, dust in the air, and the like. Cleaning treatments include RCA treatment, which involves heating to 80°C in a solution of hydrogen peroxide and ammonia, followed by alkaline cleaning, and acid boiling, which involves heating at 80°C to 150°C in a /8 solution of nitric acid or persulfuric acid. It has been known.

（３）従来技術と問題点 従来、ウェハをボイル処理した後に、ボイル槽から取り
出すとウェハ上の液が蒸発して瞬時に乾燥してしまい、
この時に溶液中のゴミ等の不純物がウェハの表面に何着
してしまうという問題があった。不純物が一度つエバ表
面に乾燥して付着してしまうとその後ウェハを洗浄槽に
入れて洗浄しても不純物は容易には除去できなくなって
しまう。(3) Conventional technology and problems Conventionally, when a wafer is taken out of the boiling tank after being boiled, the liquid on the wafer evaporates and dries instantly.
At this time, there was a problem in that impurities such as dust in the solution were deposited on the surface of the wafer. Once impurities dry and adhere to the surface of the evaporator, the impurities cannot be easily removed even if the wafer is subsequently placed in a cleaning tank and cleaned.

そこでこれを防く為、ウェハをボイル槽から取り出して
からウォータートンネルを通して洗浄槽に入れることが
考えられるが、この方法はウェハを水中で運搬するのが
困難であった。また、ウェハをボイル槽から取り出して
急冷しないで、温めてウェハを処理した後うエバを槽に
入れたまま冷却し゛（からウェハを取り出・ｕ（，１不
純物はウェハに０１着しにくいがウェハを加熱したり冷
ｊ；１１　したりすることＬＪ時間的ロスが大きく望ｔ
ｂ＜ない。さらに、ウェハのホ・イル処理後にボイル槽
中に水を徐々に入れていってボイル槽を水溶液からなる
洗どイル槽に変えていく方法もあるが１時間がかかり薬
品が無駄になるという欠点がある。In order to prevent this, it is considered to take the wafer out of the boiling tank and then put it into the cleaning tank through a water tunnel, but this method makes it difficult to transport the wafer underwater. In addition, instead of taking the wafer out of the boiling tank and cooling it rapidly, heat the wafer, process the wafer, and then cool it while leaving the evaporated water in the tank. Heating and cooling the wafer causes a large loss of LJ time.
b<No. Furthermore, there is a method in which water is gradually poured into the boiling bath after the wafer foil treatment, converting the boiling bath into a cleaning bath consisting of an aqueous solution, but this method takes an hour and has the disadvantage that chemicals are wasted. There is.

（イ）発明の目的 本発明シＪ、ウェハをボイル槽から取り出す■）不純物
が（；Ｊ着しないようにすることによりウェハのクリー
ニング効果を向」二した半導体装置の製造装置を提供す
ることを目的とする。(a) Purpose of the Invention It is an object of the present invention to provide a semiconductor device manufacturing apparatus which improves the cleaning effect of wafers by preventing impurities from adhering to the wafers. purpose.

（５）発明の構成 そして」−記目的は本発明によればウェハをｌ客演中で
加熱する処理槽と、該ウェハを洗浄する槽と。(5) Structure of the Invention According to the present invention, there is provided a processing bath for heating a wafer in a process, and a bath for cleaning the wafer.

ウェハを処理槽より洗浄槽に移す時にウェハに高温水蒸
気を与える手段とを有することを特徴とする半導体装置
の製造装置を提供することによって達成される。This is achieved by providing a semiconductor device manufacturing apparatus characterized by having means for applying high-temperature steam to a wafer when transferring the wafer from a processing tank to a cleaning tank.

３− （６）発明の実施例 以下２図面を参照して２本発明の一実施例を説明する。3- (6) Examples of the invention An embodiment of the present invention will be described below with reference to two drawings.

ホイル槽１の中には１例えば過硫酸の水溶液か貯えられ
、ヒータ２によって加熱される。水洗槽３乙こ６，１純
水か連続的に注入される。さらに、貯えられた水をヒー
タ１１，４′で加熱して高温水蒸気を７１成する水芸気
槽５，５′が設Ｕられる。水蒸気槽５．５′ｉ；Ｉ上部
にノズル状部６．６′を有する。一度に例えば２０〜５
０枚のｌ′７エハ７を５例えば石英から４（るウエハポ
ールダ８に把持して。An aqueous solution of, for example, persulfuric acid is stored in the foil tank 1 and heated by a heater 2 . Washing tank 3 and 6.1 Pure water is continuously injected. Furthermore, water tanks 5, 5' are provided for heating the stored water with heaters 11, 4' to generate high-temperature steam 71. Steam tank 5.5'i; I has a nozzle-shaped part 6.6' at the upper part. For example 20-5 at a time
Hold 0 l'7 wafers 7 in a wafer holder 8 made of, for example, quartz.

ボイル（曹１の中に４ン青し、８０℃〜１５０℃て酸ホ
ーイル処理する。次に、ウェハ７を水洗いするために、
ボイル槽１から大気中に取り出す。この時ボイル槽１か
ら水洗槽３に至るウェハ７の運１船パスにおいて、水蒸
気槽５，５′のノズル状部６゜６′より高鼎水茎気９を
ウェハ７に吹きイ」ジノるよ）にする。ウェハ７ば、ホ
イル槽１から水洗槽３まで高２ＸＡ水茎気９中を運ｊ１
ｕされる。これにより。Boil (4 insulated in soda 1 and treated with acid foil at 80°C to 150°C. Next, to wash the wafer 7 with water,
The boiling tank 1 is taken out into the atmosphere. At this time, during the transport path of the wafer 7 from the boiling tank 1 to the washing tank 3, high-temperature water vapor 9 is blown onto the wafer 7 from the nozzle-shaped portion 6° 6' of the steam tank 5, 5'. ). Wafer 7 is transported through high 2XA water stem air 9 from foil tank 1 to washing tank 3.
u will be u. Due to this.

ウェハ７は、ポ、イル槽１の外部に取り出されても。Even if the wafer 7 is taken out of the pouring tank 1.

　− 急激に乾燥したり冷却することがないので、不純物がウ
ェハ７の表面に何着することを防止できろ。- Since there is no rapid drying or cooling, it is possible to prevent impurities from adhering to the surface of the wafer 7.

次に、ウェハ７を水洗槽３に浸し、純水にて洗浄する。Next, the wafer 7 is immersed in the washing tank 3 and washed with pure water.

この純水はイオン交換樹脂と逆浸透膜を通したものを用
いその抵抗値は約１８ＭΩである。This pure water is passed through an ion exchange resin and a reverse osmosis membrane, and its resistance value is approximately 18 MΩ.

そして、ウェハ７を水洗槽３から取り出し１図示しない
熱処理工程へと運搬する。Then, the wafer 7 is taken out from the washing tank 3 and transported to a heat treatment step (not shown).

（７）発明の効果 本発明によればボイル槽からウェハを大気中に取り出し
たとき高温水蒸気が吹きつしＪられているのでウェハが
急に乾燥してかつ冷却することがないので、ボイル槽内
の薬品中や大気中の不純物がウェハに付着することがな
い。従って次にウェハを水溶液に洗浄するとき極めて効
率良くクリーニング処理を行なえるという効果大なるも
のである。(7) Effects of the Invention According to the present invention, when the wafer is taken out from the boiling tank into the atmosphere, high-temperature steam is blown out and the wafer is not suddenly dried and cooled. Impurities in the chemicals inside or in the atmosphere will not adhere to the wafer. Therefore, the next time the wafer is cleaned with an aqueous solution, the cleaning process can be carried out very efficiently, which is a great effect.

【図面の簡単な説明】[Brief explanation of drawings]

図は１本発明の一実施例の構成図である。 １・・・ボイル槽　３・・・水洗槽 ５・・・水蒸気槽　７・・・ウェハ ９・・・高温水蒸気 ５− The figure is a configuration diagram of an embodiment of the present invention. 1... Boiling tank 3... Washing tank 5...Steam tank 7...Wafer 9...High temperature steam 5-

Claims (1)

【特許請求の範囲】[Claims] （１）ウェハを溶液中で加熱する処理槽と、該ウェハを
洗浄する槽と、ウェハを処理槽より洗浄槽に移す時にウ
ェイ＼に高温水蒸気を与える手段とを有することを特徴
とする半導体装置の製造装置。(1) A semiconductor device characterized by having a processing tank for heating a wafer in a solution, a tank for cleaning the wafer, and means for applying high-temperature steam to the way when transferring the wafer from the processing tank to the cleaning tank. manufacturing equipment.
JP25005283A 1983-12-28 1983-12-28 Production equipment for semiconductor device Pending JPS60140829A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25005283A JPS60140829A (en) 1983-12-28 1983-12-28 Production equipment for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25005283A JPS60140829A (en) 1983-12-28 1983-12-28 Production equipment for semiconductor device

Publications (1)

Publication Number Publication Date
JPS60140829A true JPS60140829A (en) 1985-07-25

Family

ID=17202084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25005283A Pending JPS60140829A (en) 1983-12-28 1983-12-28 Production equipment for semiconductor device

Country Status (1)

Country Link
JP (1) JPS60140829A (en)

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