JPS62246140A - Production of magnetic recording medium - Google Patents
Production of magnetic recording mediumInfo
- Publication number
- JPS62246140A JPS62246140A JP9045386A JP9045386A JPS62246140A JP S62246140 A JPS62246140 A JP S62246140A JP 9045386 A JP9045386 A JP 9045386A JP 9045386 A JP9045386 A JP 9045386A JP S62246140 A JPS62246140 A JP S62246140A
- Authority
- JP
- Japan
- Prior art keywords
- film
- plasma
- etching
- chamber
- polymerized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 14
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- 230000002860 competitive effect Effects 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 10
- 239000000178 monomer Substances 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 6
- 239000012159 carrier gas Substances 0.000 abstract description 6
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 abstract description 4
- 229910020630 Co Ni Inorganic materials 0.000 abstract description 3
- 229910002440 Co–Ni Inorganic materials 0.000 abstract description 3
- 229910052786 argon Inorganic materials 0.000 abstract description 3
- 239000007858 starting material Substances 0.000 abstract description 2
- 239000002356 single layer Substances 0.000 abstract 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 7
- 229920006254 polymer film Polymers 0.000 description 7
- 238000004804 winding Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910020674 Co—B Inorganic materials 0.000 description 1
- 229910020515 Co—W Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は高密度磁気記録に適する強磁性金属薄膜を磁気
記録層とする磁気記録媒体の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing a magnetic recording medium having a magnetic recording layer made of a ferromagnetic metal thin film suitable for high-density magnetic recording.
従来の技術
薄膜を磁気記録層とする磁気ディスク、磁気テープ等の
磁気記録媒体は、短波長出力の大きな点が注目され、今
後の高密度磁気記録の担い手として期待されている。〔
外国論文誌：アイ・イー・イー イ磁気学会報
（ＩＥＥＥ Ｔｒａｎｓａｃｔｉｏｎ ｏｎ Ｍａｇｎ
ｅｔｉｃｓ ）ｖｏｆｌ。BACKGROUND ART Magnetic recording media such as magnetic disks and magnetic tapes that use thin films as magnetic recording layers are attracting attention for their large short wavelength output, and are expected to play a role in high-density magnetic recording in the future. [
Foreign journal: IEEE Transaction on Magnetism
etics) vofl.
ＭＡＧ−２１、Ｎｏ−３ｐ、ｐ、１２１７〜１２２０（
１９８Ｂ））有望な磁気記録層として知られるものに、
Ｃｏ−Ｎｉ−０系の斜め蒸着膜、Ｃｏ−Ｃｒ高周波スパ
ッタ膜が挙げられるが、これらの強磁性金属薄膜は、動
摩擦係数が大きく表面を有機系の被膜で被覆することが
一般に広く検討されている。第２図は代表的磁気ディス
クの拡大断面図で、第２図に於て、１はポリエチレンテ
レフタレートフィルム等の高分子フィルム、２はＣｏ−
Ｃｒ垂直磁化膜から成る磁気記録層、３はプラズマ重合
膜、有機蒸着膜などの保腹膜である。MAG-21, No-3p, p, 1217-1220 (
198B)) What is known as a promising magnetic recording layer,
Examples include Co-Ni-0-based obliquely deposited films and Co-Cr high-frequency sputtered films, but these ferromagnetic metal thin films have a large coefficient of dynamic friction, and coating the surface with an organic film has not been widely considered. There is. FIG. 2 is an enlarged sectional view of a typical magnetic disk. In FIG. 2, 1 is a polymer film such as a polyethylene terephthalate film, and 2 is a Co-
The magnetic recording layer is made of a perpendicularly magnetized Cr film, and 3 is a peritoneal retention film such as a plasma polymerized film or an organic vapor deposited film.
プラズマ重合膜の形成は、２を配した１を巻取りながら
、種々のモノマーガスを単独又はキャリアガスと混合し
て、グロー放電雰囲気に導入し、活性化し、重合を促進
させて、連続的に被膜形成するのが普通で、第３図にそ
のために用いられる代表的なプラズマ重合膜形成装置の
概略構成図を示し、図を用い簡単にプラズマ重合膜形成
について説明する。The plasma polymerized film is formed by continuously rolling up the plasma polymerized film 1 and introducing various monomer gases alone or mixed with a carrier gas into a glow discharge atmosphere, activating them, and promoting polymerization. It is common to form a film, and FIG. 3 shows a schematic diagram of a typical plasma polymerized film forming apparatus used for this purpose, and the plasma polymerized film formation will be briefly explained using the figure.
第３図で、４は円筒キャン、６は基板フィルム、６は巻
出し軸、７は巻取り軸、８は放電電嘆、９は真空容器、
１ｏは真空排気系、１１はカス導入孔、１２はに空バル
ブ、１３は石英窓、１４は紫外線源、１６は高周波電源
、１６は絶縁導入端子である。第３図の装置で、ポリエ
チレンテレフタレートフィルム上にＣｏ−Ｎｉ−０系斜
め蒸着膜を形成した基板フィルムを円筒キャン４の周側
面に沿って巻取りながら、各種のモノマーガスを１１よ
り導入し、高周波グロー放電により、重合膜を連続的に
形成する訳であるが、重合膜の架橋度をあげるために、
高周波グロー放電雰囲気に、紫外線を連続的に照射する
工夫や、モノマーガスの導入量と放電条件を最適化する
ことが実験的に行われ、一部で成功を収めている。In Fig. 3, 4 is a cylindrical can, 6 is a substrate film, 6 is an unwinding shaft, 7 is a winding shaft, 8 is a discharge coil, 9 is a vacuum container,
1o is a vacuum exhaust system, 11 is a waste introduction hole, 12 is an empty valve, 13 is a quartz window, 14 is an ultraviolet source, 16 is a high frequency power source, and 16 is an insulated introduction terminal. Using the apparatus shown in FIG. 3, various monomer gases are introduced from 11 while winding up a substrate film in which a Co-Ni-0 system obliquely vapor-deposited film is formed on a polyethylene terephthalate film along the circumferential side of the cylindrical can 4. A polymer film is continuously formed by high-frequency glow discharge, but in order to increase the degree of crosslinking of the polymer film,
Experiments have been conducted to continuously irradiate the high-frequency glow discharge atmosphere with ultraviolet rays and to optimize the amount of monomer gas introduced and discharge conditions, and some successes have been achieved.
発明が解決しようとする問題点
しかしながら上記した構成では、重合膜の厚みが１００
Å以上、更に好ましくは３００Å以上必要となり、短波
長化が進むに従い、スベーンング損失が大きく影響する
ようになるといった問題がある。Problems to be Solved by the Invention However, in the above configuration, the thickness of the polymer film is 100 mm.
Å or more, more preferably 300 Å or more is required, and as the wavelength becomes shorter, there is a problem that Svaning loss becomes more influential.
本発明は上記事情に鑑みなされたもので、重合膜の厚み
が１００Å以下であっても、十分望まれる耐久性を与え
ることができる保護膜の形成の改良を目的としだもので
ある。The present invention was made in view of the above circumstances, and its object is to improve the formation of a protective film that can provide sufficient durability even if the thickness of the polymer film is 100 Å or less.
間須点を解決するだめの手段
Ｅ記問題点を解決するため、本発明の磁気記録媒体の製
造方法は、強磁性金属薄膜の表向に、エツチングと膜形
成の競合割合が連続的に変化する条件でプラズマ重合層
を形成するものである。Means for Solving Problems In order to solve problem E, the method for manufacturing a magnetic recording medium of the present invention continuously changes the competitive ratio between etching and film formation on the surface of the ferromagnetic metal thin film. A plasma polymerized layer is formed under these conditions.
作 用
上記した構成により、プラズマ重合膜と強磁性金属膜の
付着強度を支配する界面が共有結合化することで、極め
て強い強度が得られるのと、厚み方向にプラズマ重合膜
が界面近くで硬く、表面で柔かくなるだめに、耐久性が
一層向」二した磁気記録媒体が量産できることになる。Effect With the above configuration, extremely strong strength can be obtained by covalently bonding the interface that governs the adhesion strength between the plasma polymerized film and the ferromagnetic metal film, and the plasma polymerized film is hard near the interface in the thickness direction. As the surface becomes softer, magnetic recording media with even greater durability can be mass-produced.
実施例
以下、本発明の実施例について図面を参照しながら説明
する。EXAMPLES Hereinafter, examples of the present invention will be described with reference to the drawings.
第１１図は、本発明の実施に用いたプラズマ重合装置の
要部構成図である。第１図で、１７は基板フィルム、１
８は強磁性金属薄膜の配されたポリエチレンテレフタレ
ートフィルムヲ多数回巻回した送り出し軸、１９はプラ
ズマ重合層を前記強磁性金属薄膜上に配したフィルムの
巻取り軸で、２゜は温調された非磁性円筒キャン、２１
は放電電極Ａ、２２は放電電極Ｂ、２３は放電電極Ｃ５
２４，２５゜２６は夫々高周波電源Ａ、Ｂ、Ｃである３
、２７は真空容器、２８は巻取室、２９はＡ室、３ｏは
Ｂ室、３１はＣ室、３２，３３．３４は夫々真空排気系
Ａ、Ｂ、Ｃである。３５．３６．３７は夫々ガス導入ノ
ズルＡ、Ｂ、Ｃ，３８＋３９．４０は夫々ガス量調節バ
ルブへ、Ｂ、Ｃ，４１，４２゜４３は夫々絶縁導入端子
である。FIG. 11 is a diagram showing the main parts of a plasma polymerization apparatus used in carrying out the present invention. In FIG. 1, 17 is a substrate film, 1
Reference numeral 8 denotes a feeding shaft on which a polyethylene terephthalate film on which a ferromagnetic metal thin film is arranged is wound many times, 19 is a winding shaft for the film on which a plasma polymerized layer is arranged on the ferromagnetic metal thin film, and 2° is a temperature-controlled shaft. Non-magnetic cylindrical can, 21
is discharge electrode A, 22 is discharge electrode B, and 23 is discharge electrode C5.
24, 25° 26 are high frequency power supplies A, B, and C, respectively 3
, 27 is a vacuum container, 28 is a winding chamber, 29 is a chamber A, 3o is a chamber B, 31 is a chamber C, and 32, 33, and 34 are evacuation systems A, B, and C, respectively. 35, 36, and 37 are gas introduction nozzles A, B, and C, 38+39.40 are gas volume control valves, and B, C, 41, 42, and 43 are insulated introduction terminals, respectively.
第１図の装置を用いて、厚み１０１ｔｍのポリエチレン
テレフタレートフィルム上に１ ｘ １０−４［：Ｔｏ
ｒｒｌの酸、素中でＣｏ−Ｎｉ （Ｎｉ 、２２ωｔ％
）を′電子ビーム蒸着によりｏ１１１ｍ蒸着し、保磁力
１ｏｓｏ（０）の強磁性金属薄膜を形成した基板フィル
ムを１８に装着した。Using the apparatus shown in Figure 1, 1 x 10-4[:To
rrl acid, Co-Ni (Ni, 22ωt%
) was deposited by electron beam evaporation to form a ferromagnetic metal thin film having a coercive force of 1 oso(0), and a substrate film was attached to the substrate film 18.
直径１００（７）の円筒キャンの周囲に配した、該円筒
キャンと同心円孤状の放電電極を、Ａ、Ｂ。A and B are arc-shaped discharge electrodes arranged around a cylindrical can with a diameter of 100 (7) and concentric with the cylindrical can.
Ｃ夫々、曲率半径５２．４ｃｒｎ、 ６６．７ｃｍ 、
５８．３ｚとし、円弧の長さを夫々５０ｃｍ 、 ７
９ｍ 、 １００ｍとし、夫々１３．５６＆＆の高周波
で励起するようにした。モノマーガスとしてテトラメト
キシシランを用い、キャリアガスとしてアルゴンガスを
用いた。３５より導入したガスはキャリアガスが１００
ｃｃ７ｍｉｐ＋ 、モノマーガスが１ｏ ｃｃ７ｍｉ
ｎ 、 ３６からはキャリアガス５０ｃｃ／ｍｉｎ、モ
ノマーガス６０ ｃｃ ７ｍ１ｎ 、 ３７からはキャ
リアガス２０ＣＣ／ｒ１ｍ。C, radius of curvature 52.4crn, 66.7cm, respectively.
58.3z, and the length of the arc is 50cm and 7.
The distances were 9 m and 100 m, respectively, and were excited with a high frequency of 13.56 &&. Tetramethoxysilane was used as a monomer gas, and argon gas was used as a carrier gas. The carrier gas of the gas introduced from 35 is 100
cc7mip+, monomer gas is 1o cc7mi
From n, 36, carrier gas 50 cc/min, monomer gas 60 cc 7 m1n, from 37, carrier gas 20 cc/r1 m.
モノマーガス１４０ｃｃ／構 とし、投入電力は２４．
２５．２６に夫々１．４ＫＷ、 １．１ ＫＷ、ｏ、ｓ
ＫＷとした。Ａ室ではこの条件で、はとんどエツチング
が起っており、表面が洗浄され、プラズマ重合過程はモ
ルレヤーに近いと考えられる程度で、Ｂ室、Ｃ室に移る
につれて、エツチングよりプラズマ重合膜の形成が優勢
になる。The monomer gas is 140cc/system, and the input power is 24.
25.26 respectively 1.4KW, 1.1KW, o, s
It was set as KW. In room A, under these conditions, etching is mostly occurring, the surface is cleaned, and the plasma polymerization process is considered to be close to a molar layer.As we move to room B and room C, the plasma polymerized film becomes more intense than etching. formation becomes predominant.
最終的には、強磁性金属薄膜の上にテトラメトキンシラ
ンを出発物質としたプラズマ重合膜を６０人形成した上
で、磁気テープ化し、８ｍ幅の磁気テープを得た。In the end, 60 people formed a plasma polymerized film using tetramethynesilane as a starting material on a ferromagnetic metal thin film and formed it into a magnetic tape, yielding a magnetic tape with a width of 8 m.
比較例として、第３図の装置を用いて、テトラメトキシ
シラン１４０ ｃｃ ／ｒｎｉｙｒ 、アルゴンガス２
０ｃｃ／ｍｕ１．高周波電力、 １．２２ ＫＷで重合
膜を６０人形成したものを比較例−１，高周波電力を１
．６ＫＷとし、基板フィルムの移動速度を低下させて、
重合膜を３４０人形成したものを比較例−２として準備
した。As a comparative example, using the apparatus shown in FIG. 3, 140 cc/rniyr of tetramethoxysilane, 2 cc/rniyr of argon gas,
0cc/mu1. Comparative example 1 is a polymer film formed by 60 people using high frequency power of 1.22 KW, and high frequency power of 1.
．． 6KW, lowering the moving speed of the substrate film,
A polymer film formed by 340 people was prepared as Comparative Example-2.
夫々の磁気テープを比較した。記録波長は０．７５ノ１
ｍで、磁気ヘッドは０．３７１ｍギャップ長のセンダス
トをギャップ近くにスパッタした複合型リングヘッドで
ある。スチル条件はテンション２５ノでスチル時間は３
（ｄＢ）出力が低下するまでの時間で比較したものであ
る。Each magnetic tape was compared. Recording wavelength is 0.75 no.
The magnetic head is a composite ring head in which Sendust with a gap length of 0.371 m is sputtered near the gap. Still conditions are tension 25 and still time 3
(dB) This is a comparison based on the time until the output decreases.
出力は、本発明と比較例−１はｏ［ｄＢ）、比較例−２
は、−４，２（ｄＢ）で、スチル時間は、本発明は４９
分、比較例−１は２．２分、比較例−２は３７分であっ
た。The output is o[dB] for the present invention and comparative example-1, and comparative example-2.
is -4.2 (dB), and the still time is 49
minutes, Comparative Example-1 was 2.2 minutes, and Comparative Example-2 was 37 minutes.
実施例では、強磁性金属１ｊｑ膜としてＣｏ −Ｎ ｉ
−０斜め蒸着膜で説明したが、他にＣｏ−Ｃｒ、Ｃｏ
−０゜Ｃｏ −Ｖ 、 Ｃｏ−Ｂ 、 Ｃｏ−Ｔ ｉ
、 Ｃｏ −Ｍｏ 、 Ｃｏ−Ｗ。In the example, Co-Ni is used as the ferromagnetic metal 1jq film.
-0 obliquely deposited film, but Co-Cr, Co
-0゜Co-V, Co-B, Co-T i
, Co-Mo, Co-W.
Ｃｏ−Ｒｕ 、 Ｃｏ−３ｍ 、Ｃｏ−Ｎｉ −Ｐ 、
Ｃｏ−Ｎｉ−Ｃｒ 。Co-Ru, Co-3m, Co-Ni-P,
Co-Ni-Cr.
Ｃｏ−Ｎｉ−Ｒｈ等でもよく、磁化容易軸には無関係で
実施できる。Co--Ni--Rh or the like may be used, and it can be carried out regardless of the axis of easy magnetization.
用いるモノマーガスは、他に、Ｃ２Ｆ４．Ｃ２Ｆ６゜Ｃ
２Ｈ３Ｆ、メチルアミン、トリメルチルアミン。In addition, the monomer gas used is C2F4. C2F6゜C
2H3F, methylamine, trimerthylamine.
トリメチルクロロシラン、オルガノシロキサン。Trimethylchlorosilane, organosiloxane.
エチレン、プロピレン等、特に制約を受ける材料はない
。There are no particular materials such as ethylene and propylene that are subject to restrictions.
発明の効果
以上のように本発明によれば、プラズマ重合膜による強
磁性金属薄膜に対する保護効果は、出力低下をきたさな
い厚みであっても十分発揮されるといった優れた効果が
ある。Effects of the Invention As described above, the present invention has an excellent effect in that the plasma polymerized film can sufficiently protect a ferromagnetic metal thin film even if the film is thick enough not to cause a decrease in output.
第１図は本発明の実施に用いたプラズマ重合膜形成装置
の一例の要部構成図、第２図は磁気記録媒体の拡大断面
図、第３図は従来のプラズマ重合膜形成装置の要部構成
図である。
１８・・・・・送り出し軸、１９・・・・巻取り軸、２
゜・・・円筒キャン、２１・・・・・・放電電極Ａ、２
２・・・・・放電電極Ｂ、２３・・・・・放電電極Ｃ０
代理人の氏名 弁理士 中 尾 敏 男 ほか１名２０
・−円筒キマン
ｚ３−−一放を他極Ｃ
ｑFig. 1 is a configuration diagram of the main parts of an example of a plasma polymerized film forming apparatus used in carrying out the present invention, Fig. 2 is an enlarged sectional view of a magnetic recording medium, and Fig. 3 is a main part of a conventional plasma polymerized film forming apparatus. FIG. 18...Feeding shaft, 19...Rewinding shaft, 2
゜...Cylindrical can, 21...Discharge electrode A, 2
2...discharge electrode B, 23...discharge electrode C0
Name of agent: Patent attorney Toshio Nakao and 1 other person 20
・-Cylindrical Kiman Z3--One release to other pole C q
Claims (1)
、エッチングと膜形成の競合割合が連続的に変化する条
件で膜形成を行うことを特徴とする磁気記録媒体の製造
方法。A method for manufacturing a magnetic recording medium, characterized in that when forming a plasma polymerized layer on the surface of a ferromagnetic metal thin film, film formation is performed under conditions in which the competitive ratio between etching and film formation continuously changes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9045386A JPS62246140A (en) | 1986-04-18 | 1986-04-18 | Production of magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9045386A JPS62246140A (en) | 1986-04-18 | 1986-04-18 | Production of magnetic recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62246140A true JPS62246140A (en) | 1987-10-27 |
Family
ID=13999038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9045386A Pending JPS62246140A (en) | 1986-04-18 | 1986-04-18 | Production of magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62246140A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6089816A (en) * | 1983-10-20 | 1985-05-20 | Hitachi Maxell Ltd | Magnetic recording medium and its production |
| JPS60124028A (en) * | 1983-12-08 | 1985-07-02 | Matsushita Electric Ind Co Ltd | Production of magnetic recording medium |
| JPS6122429A (en) * | 1984-07-10 | 1986-01-31 | Hitachi Maxell Ltd | Production of magnetic recording medium |
-
1986
- 1986-04-18 JP JP9045386A patent/JPS62246140A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6089816A (en) * | 1983-10-20 | 1985-05-20 | Hitachi Maxell Ltd | Magnetic recording medium and its production |
| JPS60124028A (en) * | 1983-12-08 | 1985-07-02 | Matsushita Electric Ind Co Ltd | Production of magnetic recording medium |
| JPS6122429A (en) * | 1984-07-10 | 1986-01-31 | Hitachi Maxell Ltd | Production of magnetic recording medium |
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