JPS62175926A - Vertical magnetic recording medium and its production - Google Patents
Vertical magnetic recording medium and its productionInfo
- Publication number
- JPS62175926A JPS62175926A JP1210186A JP1210186A JPS62175926A JP S62175926 A JPS62175926 A JP S62175926A JP 1210186 A JP1210186 A JP 1210186A JP 1210186 A JP1210186 A JP 1210186A JP S62175926 A JPS62175926 A JP S62175926A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- layer
- recording medium
- magnetic recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010410 layer Substances 0.000 claims abstract description 35
- 238000004544 sputter deposition Methods 0.000 claims abstract description 20
- 239000011241 protective layer Substances 0.000 claims abstract description 17
- 238000009832 plasma treatment Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000010408 film Substances 0.000 abstract description 38
- 238000011282 treatment Methods 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052804 chromium Inorganic materials 0.000 abstract description 4
- 208000028659 discharge Diseases 0.000 abstract description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 238000007733 ion plating Methods 0.000 abstract 1
- 230000005415 magnetization Effects 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 238000004804 winding Methods 0.000 description 7
- 229910000599 Cr alloy Inorganic materials 0.000 description 5
- WMFYOYKPJLRMJI-UHFFFAOYSA-N Lercanidipine hydrochloride Chemical compound Cl.COC(=O)C1=C(C)NC(C)=C(C(=O)OC(C)(C)CN(C)CCC(C=2C=CC=CC=2)C=2C=CC=CC=2)C1C1=CC=CC([N+]([O-])=O)=C1 WMFYOYKPJLRMJI-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910020641 Co Zr Inorganic materials 0.000 description 2
- 229910020520 Co—Zr Inorganic materials 0.000 description 2
- -1 Fe-AI-S i Inorganic materials 0.000 description 2
- 229910018499 Ni—F Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 101100366935 Caenorhabditis elegans sto-2 gene Proteins 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910017315 Mo—Cu Inorganic materials 0.000 description 1
- 229910020018 Nb Zr Inorganic materials 0.000 description 1
- 229910003192 Nb–Ta Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 244000005687 Poranopsis paniculata Species 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- HDRXZJPWHTXQRI-BHDTVMLSSA-N diltiazem hydrochloride Chemical compound [Cl-].C1=CC(OC)=CC=C1[C@H]1[C@@H](OC(C)=O)C(=O)N(CC[NH+](C)C)C2=CC=CC=C2S1 HDRXZJPWHTXQRI-BHDTVMLSSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は垂直磁気記録媒体及びその製造方法、特に走行
耐久性が改良された垂直磁気記録媒体及びその製造方法
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a perpendicular magnetic recording medium and a method of manufacturing the same, and more particularly to a perpendicular magnetic recording medium with improved running durability and a method of manufacturing the same.
近年、記録媒体の膜面に対して垂直な方向に磁気容易軸
を有する磁気記録媒体を用いる垂直磁気記録材料が提案
されている。この垂直磁気記録材料fは、記録密度が高
まるほど記録媒体中の反磁界が減少するため、優れ九再
生出力が得られ本質的に高密度記録に適した材料といえ
る。In recent years, perpendicular magnetic recording materials have been proposed that use a magnetic recording medium having a magnetic easy axis in a direction perpendicular to the film surface of the recording medium. This perpendicular magnetic recording material f can be said to be a material essentially suitable for high-density recording, since the demagnetizing field in the recording medium decreases as the recording density increases, resulting in excellent reproduction output.
かかる垂直磁気記録材料の磁気記録を行なうには、記録
媒体の膜面に対して垂直な方向に磁気容易軸を有する磁
気記録媒体を必要とする。このような垂直磁気記録媒体
としては、高分子劇料或いは非磁性金属等の非磁性材料
から成る基板又は支持体上に、Co−Cr合金等をスパ
ッタリング法等で形成したものが知られている。To perform magnetic recording using such a perpendicular magnetic recording material, a magnetic recording medium having a magnetic easy axis in a direction perpendicular to the film surface of the recording medium is required. As such a perpendicular magnetic recording medium, one in which a Co-Cr alloy or the like is formed by sputtering or the like on a substrate or support made of a non-magnetic material such as a polymeric material or a non-magnetic metal is known. .
また、垂直磁気記録再生時の記録再生効率の改善を図る
ため、前記のCo −Cr合金膜よシ成る垂直磁気記録
層の下に下地層として軟磁性劇料よシ成る高透磁率層、
例えば、パーマロイ(Ni −Fe系合金)膜を設けた
、いわゆる二層膜型の垂直磁気記録媒体が知られている
。Furthermore, in order to improve the recording and reproducing efficiency during perpendicular magnetic recording and reproducing, a high magnetic permeability layer comprising a soft magnetic material as an underlayer is provided under the perpendicular magnetic recording layer comprising the Co--Cr alloy film.
For example, a so-called double-layer perpendicular magnetic recording medium provided with a permalloy (Ni--Fe alloy) film is known.
また、前記垂直磁気記録材料を用いたフレキシブルディ
スク等においては、支持体の両面に前記の二層型垂直磁
気記録媒体を形成した、いわゆる両面二層型垂直磁気記
録媒体の方が記録容量が大で且つカールの改善がやシ易
い等のため優れている。Furthermore, in flexible disks and the like using the perpendicular magnetic recording material, so-called double-sided double-layer perpendicular magnetic recording media, in which the double-layer perpendicular magnetic recording medium is formed on both sides of a support, have a larger recording capacity. It is excellent because it improves curls and is easy to curl.
上記側れのタイプの垂直磁気媒体も、上記材料をスパッ
タリング装置を用いて連続的又は非連続的に支持体に設
けることによって製造している。The side-type perpendicular magnetic media are also manufactured by applying the above materials to a support continuously or discontinuously using a sputtering device.
このような垂直磁気媒体は高記録密度に適した記録媒体
として磁気テープや磁気ディスクに期待されているが、
一つの大きな問題として一般に走行耐久性が他めて悪く
、例えばCo−Cr合金膜を設は九垂直磁気記録ディス
クの場合1万回程度の走行パスで表面の合金層の凝結等
が生じて走行不能になることが多い。Such perpendicular magnetic media is expected to be used as a recording medium suitable for high recording densities, such as magnetic tapes and magnetic disks.
One major problem is that running durability is generally poor; for example, in the case of a perpendicular magnetic recording disk with a Co-Cr alloy film, the alloy layer on the surface will condense after about 10,000 running passes. It is often impossible.
このような問題を解決するために、カーメン、SiO2
、BN(特開昭58−133627号公報)、StC(
特開昭58−130437号公報)等を保護層として磁
性層表面にス・ぞツタリング等によって設けることが提
案されている。In order to solve such problems, carmen, SiO2
, BN (Japanese Unexamined Patent Publication No. 58-133627), StC (
It has been proposed to provide a protective layer such as JP-A No. 58-130437 on the surface of the magnetic layer by grating or the like.
しかしながら、これらの処理としてもなお走行耐久性の
改良は不十分で1)、特に同じ製造工程にあっても製品
の再現性が悪く、耐久性の良いものや耐久性が極めて悪
いものが得られ一定して耐久性の良いものが得られない
という問題があった。However, even with these treatments, the improvement in running durability is still insufficient (1), and in particular, the reproducibility of the products is poor even in the same manufacturing process, and products with good durability and products with extremely poor durability can be obtained. There was a problem in that it was not possible to obtain a product with consistently good durability.
従って、本発明は再現性良く走行耐久性が著しく改良さ
れた垂直磁気記録媒体及びその製造方法を提供すること
にある。Therefore, an object of the present invention is to provide a perpendicular magnetic recording medium with good reproducibility and significantly improved running durability, and a method for manufacturing the same.
本発明は前記問題を解決すべく鋭意研究を重ねた結果、
磁性層をプラズマ処理した後に保護層を設けることによ
シ、耐久性の著しく改良された垂直磁気記録媒体を再現
性よく得ることが1きることを見出し、本発明を達成し
た。The present invention was developed as a result of extensive research to solve the above problems.
The inventors have discovered that by providing a protective layer after plasma-treating the magnetic layer, a perpendicular magnetic recording medium with significantly improved durability can be obtained with good reproducibility, and the present invention has been achieved.
すなわち、本発明は非磁性基板の少くとも1面に垂直異
方性を有する磁性層と保護層を設けた垂直磁気記録媒体
において、該磁性層の表面がプラズマ処理されているこ
とを特徴とする垂直磁気記録媒体及び非磁性基板の少く
とも1面にスパッタリングによシ垂直磁気異方性を有す
る磁性層と保護層を設けることによる垂直磁気記録材料
の製造方法たおいて、磁性層を設けた後これをプラズマ
処理し、次いで保護層を設けることを特徴とする垂直磁
気記録媒体の製造方法fある。That is, the present invention provides a perpendicular magnetic recording medium in which a magnetic layer having perpendicular anisotropy and a protective layer are provided on at least one surface of a nonmagnetic substrate, characterized in that the surface of the magnetic layer is plasma-treated. A method for manufacturing a perpendicular magnetic recording material by providing a magnetic layer having perpendicular magnetic anisotropy and a protective layer on at least one surface of a perpendicular magnetic recording medium and a non-magnetic substrate by sputtering, in which a magnetic layer is provided. There is a method for manufacturing a perpendicular magnetic recording medium, which is characterized in that the perpendicular magnetic recording medium is then subjected to plasma treatment and then a protective layer is provided.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明においてはまず非磁性基板上に片面又は両面に膜
面に垂直な方向に磁気容易軸を有する垂直磁気膜、例え
ばCo −Cr膜をスノぞツタリング、真空蒸着、イオ
ンブレーティング等のいわゆる薄膜形成材料フ形成する
。この場合、垂直磁気膜を形成する前に低抗磁力または
高透磁率の軟磁性膜、例えばA−マロイ膜を同様にスノ
ぐツタリング等によって設けてもよい。また上記垂直磁
気膜等は単層であっても複数の層から構成されていても
よい。In the present invention, first, a perpendicular magnetic film having a magnetic easy axis in a direction perpendicular to the film surface on one or both sides of a non-magnetic substrate, such as a Co-Cr film, is deposited on a so-called thin film by snootering, vacuum evaporation, ion blating, etc. Forming material is formed. In this case, before forming the perpendicular magnetic film, a soft magnetic film with low coercive force or high magnetic permeability, such as an A-Malloy film, may be similarly provided by snogging or the like. Further, the above-mentioned perpendicular magnetic film etc. may be a single layer or may be composed of a plurality of layers.
また基板と垂直磁気層との間に非磁性下地層を設けても
良いし、軟磁性層と垂直磁気層との間に非磁性中間層を
設けてもよい。従って本発明受雷う磁性層は、上記の如
き垂直磁気膜のみの場合や軟磁性膜と垂直磁気膜が設け
られた場合とを包含する0
本発明における非磁性基体としては、ポリエチレンテレ
フタレート(PET ) 、ポリイミド、ポリアミド等
のフィルム状高分子材料に対して特に顕著な効果を有す
るが、金属材料、ガラス等の非金属材料等にも適用され
る。Further, a nonmagnetic underlayer may be provided between the substrate and the perpendicular magnetic layer, or a nonmagnetic intermediate layer may be provided between the soft magnetic layer and the perpendicular magnetic layer. Therefore, the magnetic layer of the present invention includes only a perpendicular magnetic film as described above, and a case where a soft magnetic film and a perpendicular magnetic film are provided. ) has a particularly remarkable effect on film-like polymer materials such as polyimide and polyamide, but it is also applicable to metal materials, non-metal materials such as glass, etc.
軟磁性膜の拐料としては、Ni −Fe、 Ni −F
e −Mo 、 Ni −Fe −Mo −Cu等のパ
ーマロイ合金に限らず、Fe、 Fe −AI −S
i、 F@−Ni−0、Fe −TI、 Ni −F
e−Cu−Cr−Mn、Fs−81−B。As the material for the soft magnetic film, Ni-Fe, Ni-F
Not limited to permalloy alloys such as e-Mo, Ni-Fe-Mo-Cu, but also Fe, Fe-AI-S
i, F@-Ni-0, Fe-TI, Ni-F
e-Cu-Cr-Mn, Fs-81-B.
Fe−B−C,Fe−Al、 Co−V−FeXCo
−Ta。Fe-B-C, Fe-Al, Co-V-FeXCo
-Ta.
Co−Zr、 Co −Nb −Zr、 Co−T
iXCo−Nb−Ta、 Co−Nt −Zr、
Fo −Ni−P、 Fe −Co −Zr、 Co
−Mo −Zr等のいわゆる軟磁性合金材料も適用で
きる。Co-Zr, Co-Nb-Zr, Co-T
iXCo-Nb-Ta, Co-Nt-Zr,
Fo-Ni-P, Fe-Co-Zr, Co
So-called soft magnetic alloy materials such as -Mo-Zr can also be applied.
膜厚としては0.03〜5ミクロン、特に0.1〜1ミ
クロン程度が好ましい。The film thickness is preferably about 0.03 to 5 microns, particularly about 0.1 to 1 micron.
垂直磁気膜としては、磁気容易軸が支持体表面に対して
ほぼ垂直の方向に向いていることが必要であシ、垂直磁
気膜の材料として知られているC。For the perpendicular magnetic film, it is necessary that the magnetic easy axis is oriented in a direction substantially perpendicular to the support surface, and C is known as a material for the perpendicular magnetic film.
とCrを主成分とする合金材料が望ましい。An alloy material containing Cr and Cr as main components is desirable.
膜厚としては、0.03〜5ミクロン程度に選ばれるが
、0.05〜1ミクロン程度が特に望ましい。The film thickness is selected to be about 0.03 to 5 microns, and preferably about 0.05 to 1 micron.
膜形成手段としては、蒸着、スパッター等が用いられる
が後記の実施例〒のべるような複数個の円筒状キャンの
周囲に配置された複数個の高速スパッター源を有するい
わゆる連続スパッター法が望ましい。As the film forming means, vapor deposition, sputtering, etc. can be used, but a so-called continuous sputtering method having a plurality of high-speed sputtering sources disposed around a plurality of cylindrical cans is preferable, as described in Examples below.
スパッター室としては、例えばCo −Cr合金の場合
Co −Cr合金をターゲットに用いてもよく、Coと
Crを別々なターゲットとして用いてもよい。In the sputtering chamber, for example, in the case of a Co--Cr alloy, a Co--Cr alloy may be used as a target, or Co and Cr may be used as separate targets.
円筒状キャンの温度としては、ノぐ−マロイ膜等の硬磁
性膜形成時は硬磁性膜の面内での磁気異方性が生じるの
を防ぐため30℃以上が望ましい。The temperature of the cylindrical can is preferably 30° C. or higher when forming a hard magnetic film such as a Nogmalloy film to prevent magnetic anisotropy from occurring in the plane of the hard magnetic film.
一方、キャン温度を余シ高くすると支持体からのガス放
出や、オリ!’マーの析出等が生ずるため90℃以下が
望ましい。On the other hand, if the can temperature is made too high, gas may be released from the support and the temperature may deteriorate. The temperature is preferably 90° C. or lower since precipitation of mer and the like may occur.
磁気異方性と膜表面の凹凸を特に少なくするためには、
45〜65℃が特に望ましい。一方、c。In order to particularly reduce magnetic anisotropy and film surface irregularities,
A temperature of 45 to 65°C is particularly desirable. On the other hand, c.
−Cr膜の形成時には、所望のHe (垂直)を得るた
めに円筒状キャンの温度を90℃以上に加熱することが
望ましく、またHa (垂直)の垂直磁気膜を得るため
には、120℃以上が特に望ましい。When forming a -Cr film, it is desirable to heat the cylindrical can to a temperature of 90°C or higher in order to obtain the desired He (perpendicular) magnetic film; The above is particularly desirable.
本発明においては、上記のようにして形成した磁性層表
面をプラズマ処理し、次いで保護層を設けることを特徴
としている。これらのうち特にカーゼンが好ましい。The present invention is characterized in that the surface of the magnetic layer formed as described above is subjected to plasma treatment, and then a protective layer is provided. Among these, carzene is particularly preferred.
プラズマ処理としては直流、交流、又は高周波によるグ
ロー放電処理または高周波または直流による逆スパツタ
リング処理がある。The plasma treatment includes glow discharge treatment using direct current, alternating current, or high frequency, or reverse sputtering treatment using high frequency or direct current.
グロー放電処理は、磁性層を設けた磁気記録媒体に真空
槽(例えばスパッター装置)中’t’lo−’〜10T
orrのアルゴン雰囲気中で500v程度の電圧を印加
し、磁性層表面は逆にグロー放電を生じさせる。Glow discharge treatment is performed by subjecting a magnetic recording medium provided with a magnetic layer to 't'lo-' to 10T in a vacuum chamber (for example, a sputtering device).
A voltage of about 500 V is applied in an argon atmosphere of 500 V to generate a glow discharge on the surface of the magnetic layer.
逆スパツタリング処理は、磁性層をスパッタリング(円
筒キャンを−、ターゲットを+)によって設けた場合、
この電圧印加を逆向き(円筒キャンを+、ターゲットを
−)として5oov程度の電圧を印加してアルゴンイオ
ンフ磁性層表面をたたくようKする。In the reverse sputtering process, when the magnetic layer is provided by sputtering (cylindrical can -, target - +),
This voltage is applied in the opposite direction (+ to the cylindrical can, - to the target), and a voltage of about 50V is applied to strike the surface of the argon ion magnetic layer.
このようにプラズマ処理した磁性層表面に次いで保護層
をスパッタリング等によって設ける。A protective layer is then provided on the surface of the magnetic layer subjected to the plasma treatment in this manner by sputtering or the like.
中間層としては、カーゼン、s to2、Co−0−C
r、Cr−0等が用いられる。As the intermediate layer, carzen, sto2, Co-0-C
r, Cr-0, etc. are used.
保護層の膜厚としては0.002μm〜0.1μm1特
に0.005〜0.05が好ましい。The thickness of the protective layer is preferably 0.002 μm to 0.1 μm, particularly 0.005 to 0.05 μm.
本発明によるときは走行耐久性が著しく改良された垂直
磁気記録媒体を再現性良く得ることができる。According to the present invention, a perpendicular magnetic recording medium with significantly improved running durability can be obtained with good reproducibility.
第1図は本発明の垂直磁気記録媒体を作成するのに用い
られるスパッター装置の一例を示す概略図である。FIG. 1 is a schematic diagram showing an example of a sputtering apparatus used for producing the perpendicular magnetic recording medium of the present invention.
第1図に図示される両面連続ス・qツタ−装置を用いて
両面二層型垂直磁気媒体を作成した。50ミクロン厚の
ロール状のポリイミドフィルム41を送出軸42にセッ
トし、中間ローラ及び冷却された円筒状キャン43,4
4を経て巻取軸45に巻取られるようにした。真空槽は
送出室46、スパッター室47、巻取室48の3つに大
別し、各室は隔壁49.50で仕切り、各室はそれぞれ
排気系51.52及び53.54によシ排気した。A double-sided double-layer perpendicular magnetic medium was fabricated using a double-sided continuous star/q-tutter device shown in FIG. A roll-shaped polyimide film 41 with a thickness of 50 microns is set on the delivery shaft 42, and an intermediate roller and cooled cylindrical cans 43, 4
4 and then wound onto a winding shaft 45. The vacuum chamber is roughly divided into three parts: a delivery chamber 46, a sputtering chamber 47, and a winding chamber 48. Each chamber is partitioned by a partition wall 49.50, and each chamber is evacuated by exhaust systems 51.52 and 53.54, respectively. did.
スパッター室にはカー2ンを有するDCプレーナマグネ
トロン材料のスパッターカソード55 、57、及びC
o −Crターゲット(Co 82− Cr 18重量
%)を有するRFプレーナマグネトロン材料のスノぐツ
タ−カソード56,58を設けた。The sputter chamber includes sputter cathodes 55, 57 and C of DC planar magnetron material having two carbons.
Snogger cathodes 56, 58 of RF planar magnetron material with o-Cr targets (18 wt% Co82-Cr) were provided.
かかるスパッター装置のスパッター室内47をI X
10 torr以下の圧力まで真空排気した後、ガス
導入系59よpArガスを導入し、約5 X 10−’
torrに維持した。送出軸42よp 20 tm/
mの搬送速度1送出されたポリイミドフィルム41上に
、まずキャン43の位置でスパッターカソード56によ
り片面の面(0面)に約3,000 XのCo −Cr
膜を形成した。続いてキャン44の位置でスパンターカ
ソード58によりもう一方の面(工面)に約3.000
XのCo −Cr膜を形成し、巻取軸45で巻取った
。The sputtering chamber 47 of such a sputtering device is
After evacuation to a pressure of 10 torr or less, pAr gas was introduced through the gas introduction system 59, and the pressure was approximately 5 x 10-'
maintained at torr. Delivery shaft 42 p 20 tm/
On the polyimide film 41 fed out at a conveying speed of 1 m, first, at the position of the can 43, Co-Cr of about 3,000× is applied to one side (0 side) by a sputter cathode 56.
A film was formed. Next, at the position of the can 44, the spanter cathode 58 is applied to the other surface (worked surface) by approximately 3.000 mm.
A Co-Cr film of X was formed and wound around a winding shaft 45.
このようにして両面にCo−Cr膜を形成した?リイミ
ドフィルムを再び逆転して巻取軸45から搬送し、スノ
ぐツタの極性を切シ換え、キャン43及び44の位置で
Ar雰囲気中で逆スノぞツタリングを行い、両表面のプ
ラズマ処理を施した後巻軸42に巻取った。Did you form a Co-Cr film on both sides in this way? The Liimide film is reversed again and conveyed from the take-up shaft 45, the polarity of the vines is switched, and reverse vine vines are carried out in an Ar atmosphere at the positions of the cans 43 and 44, and both surfaces are plasma treated. After that, it was wound up on a winding shaft 42.
次いで、スノぞツタの極性をもとにもどし、巻軸42か
ら再度退転し、キャ/43及び44の位置でカーメンカ
ン−rss、s’yよシヵーメンの保護層を形成し、巻
軸45に巻き取った。Next, the polarity of the snow vine is restored to its original polarity, and it retracts from the winding shaft 42, forming a protective layer of carmen can-rss, s'y at positions 43 and 44, and winding it around the winding shaft 45. I took it.
このようにして作成した垂直磁気媒体を直径3.5イン
チのディスクにカットし、市販のディスクジャケットに
組み込んだ。The perpendicular magnetic media thus prepared were cut into 3.5 inch diameter disks and assembled into commercially available disk jackets.
市販3.5フロツピデイスクトリイブにょシ記録を行っ
た後、600r、p、m、?回転させ、再生信号をモニ
ターしながら走行させ走行が止まるま1のAス数を測定
した。(最大1000万パスでテストを中止した。)
比較のため上記作成1プラズマ処理(逆ス・ぐツタリン
グ処理)を行わなかったもの、及びCo −Cr層のみ
を設けたものを作り同様なテストを行った。After recording on a commercially available 3.5 floppy disk drive, 600r, p, m, ? The vehicle was rotated and run while monitoring the reproduction signal, and the number of A passes until the vehicle stopped running was measured. (The test was stopped after a maximum of 10 million passes.) For comparison, we created a sample without the above Creation 1 plasma treatment (reverse suction treatment) and a sample with only a Co-Cr layer, and conducted a similar test. went.
各々10コの試料を作ってテストした。Ten samples of each were made and tested.
得られた結果を第2図に示した。The results obtained are shown in Figure 2.
第2図の結果からも明かなように、Co−Cr膜のみを
設けた試料は約10tOOO/eスで走行不能になシ、
プラズマ処理を行わずにカーメン保護層を設けたものは
、1万ノ9スから1000万・ぞスまフ走行耐久性にば
らつきがあシ、再現性が悪かった。これに対して本発明
による場合は何れも約走行パスが1000万パスに近い
著しく耐久性のすぐれた垂直磁気媒体を再現性良く製造
することができた。As is clear from the results shown in Figure 2, the sample with only a Co-Cr film became unable to run at approximately 10 tOOO/e.
In the case where the carmen protective layer was provided without plasma treatment, the running durability varied from 10,000 to 10,000,000 times, and the reproducibility was poor. On the other hand, in the case of the present invention, it was possible to produce perpendicular magnetic media with excellent durability and good reproducibility, with a traveling pass of approximately 10 million passes.
上記実施例は逆スパツタリングによシプラズマ処理を行
う場合を示したが、グロー処理によってプラズマ処理す
ることが1きる。Although the above embodiment shows the case where the plasma treatment is performed by reverse sputtering, it is also possible to perform the plasma treatment by glow treatment.
また、Co−Cr膜のみ受なく、前記した如き軟磁性層
を設けた上にCo−Cr膜を設けてもよい。Further, instead of only having a Co--Cr film, a Co--Cr film may be provided on top of a soft magnetic layer as described above.
第1図は本発明の垂直磁気媒体を製造する装置の一例を
示す概略図、第2図は実施例における走行・ソステスト
の結果を示す図である。
43.44・・・キャン、55,57・・・カーメンカ
ンード、56,58・・・Co−Crカソード。
第 1 図
第2図
手続補正書
昭和62年2月72日FIG. 1 is a schematic diagram showing an example of an apparatus for manufacturing a perpendicular magnetic medium according to the present invention, and FIG. 2 is a diagram showing the results of a running/suspension test in the example. 43.44...Can, 55,57...Carmen cand, 56,58...Co-Cr cathode. Figure 1 Figure 2 Procedural amendment document February 72, 1988
Claims (3)
磁性層と保護層を設けた垂直磁気記録媒体において、該
磁性層の表面がプラズマ処理されていることを特徴とす
る垂直磁気記録媒体。(1) A perpendicular magnetic recording medium comprising a magnetic layer having perpendicular anisotropy and a protective layer on at least one surface of a non-magnetic substrate, wherein the surface of the magnetic layer is plasma-treated. recoding media.
り垂直磁気異方性を有する磁性層と保護層を設けること
による垂直磁気記録材料の製造方法において、磁性層を
設けた後これをプラズマ処理し、次いで保護層を設ける
ことを特徴とする垂直磁気記録媒体の製造方法。(2) A method for manufacturing a perpendicular magnetic recording material by providing a magnetic layer having perpendicular magnetic anisotropy and a protective layer on at least one surface of a nonmagnetic substrate by sputtering, in which the magnetic layer is provided and then plasma treated. . A method for manufacturing a perpendicular magnetic recording medium, the method comprising: then providing a protective layer.
同一真空槽中で行うことを特徴とする特許請求の範囲第
(2)項に記載の垂直磁気記録媒体の製造方法。(3) The method for manufacturing a perpendicular magnetic recording medium according to claim (2), wherein the formation of the magnetic layer, the plasma treatment, and the formation of the protective layer are performed in the same vacuum chamber.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1210186A JPS62175926A (en) | 1986-01-24 | 1986-01-24 | Vertical magnetic recording medium and its production |
US07/506,493 US4994321A (en) | 1986-01-24 | 1990-04-05 | Perpendicular magnetic recording medium and the method for preparing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1210186A JPS62175926A (en) | 1986-01-24 | 1986-01-24 | Vertical magnetic recording medium and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62175926A true JPS62175926A (en) | 1987-08-01 |
Family
ID=11796175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1210186A Pending JPS62175926A (en) | 1986-01-24 | 1986-01-24 | Vertical magnetic recording medium and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62175926A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02126418A (en) * | 1988-11-04 | 1990-05-15 | Matsushita Electric Ind Co Ltd | Magnetic recording medium |
-
1986
- 1986-01-24 JP JP1210186A patent/JPS62175926A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02126418A (en) * | 1988-11-04 | 1990-05-15 | Matsushita Electric Ind Co Ltd | Magnetic recording medium |
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