JPS62243231A - 半導体製造装置 - Google Patents
半導体製造装置Info
- Publication number
- JPS62243231A JPS62243231A JP61086861A JP8686186A JPS62243231A JP S62243231 A JPS62243231 A JP S62243231A JP 61086861 A JP61086861 A JP 61086861A JP 8686186 A JP8686186 A JP 8686186A JP S62243231 A JPS62243231 A JP S62243231A
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- current density
- ion
- value
- maximum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 100
- 238000005468 ion implantation Methods 0.000 claims abstract description 34
- 239000000523 sample Substances 0.000 claims abstract description 23
- 150000002500 ions Chemical class 0.000 claims description 19
- 238000004458 analytical method Methods 0.000 claims description 16
- 238000009826 distribution Methods 0.000 claims description 16
- 238000004364 calculation method Methods 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 3
- 230000006378 damage Effects 0.000 abstract description 3
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 239000011159 matrix material Substances 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 208000027418 Wounds and injury Diseases 0.000 abstract 1
- 208000014674 injury Diseases 0.000 abstract 1
- 238000000034 method Methods 0.000 description 14
- 238000005259 measurement Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61086861A JPS62243231A (ja) | 1986-04-15 | 1986-04-15 | 半導体製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61086861A JPS62243231A (ja) | 1986-04-15 | 1986-04-15 | 半導体製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62243231A true JPS62243231A (ja) | 1987-10-23 |
| JPH0542103B2 JPH0542103B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-06-25 |
Family
ID=13898594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61086861A Granted JPS62243231A (ja) | 1986-04-15 | 1986-04-15 | 半導体製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62243231A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01155252U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1988-04-15 | 1989-10-25 | ||
| US5132545A (en) * | 1989-08-17 | 1992-07-21 | Mitsubishi Denki Kabushiki Kaisha | Ion implantation apparatus |
| EP0701269A1 (en) * | 1989-08-17 | 1996-03-13 | Mitsubishi Denki Kabushiki Kaisha | Ion implantation apparatus |
| JP2015005472A (ja) * | 2013-06-24 | 2015-01-08 | 株式会社Ｓｅｎ | 高エネルギー精度の高周波加速式のイオン加速・輸送装置 |
-
1986
- 1986-04-15 JP JP61086861A patent/JPS62243231A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01155252U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1988-04-15 | 1989-10-25 | ||
| US5132545A (en) * | 1989-08-17 | 1992-07-21 | Mitsubishi Denki Kabushiki Kaisha | Ion implantation apparatus |
| EP0701269A1 (en) * | 1989-08-17 | 1996-03-13 | Mitsubishi Denki Kabushiki Kaisha | Ion implantation apparatus |
| JP2015005472A (ja) * | 2013-06-24 | 2015-01-08 | 株式会社Ｓｅｎ | 高エネルギー精度の高周波加速式のイオン加速・輸送装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0542103B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-06-25 |
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