JPS62241821A - 陽イオン伝導体 - Google Patents

陽イオン伝導体

Info

Publication number
JPS62241821A
JPS62241821A JP61081622A JP8162286A JPS62241821A JP S62241821 A JPS62241821 A JP S62241821A JP 61081622 A JP61081622 A JP 61081622A JP 8162286 A JP8162286 A JP 8162286A JP S62241821 A JPS62241821 A JP S62241821A
Authority
JP
Japan
Prior art keywords
conductivity
conductor
cation
dimensional
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61081622A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0242770B2 (enrdf_load_stackoverflow
Inventor
Yoshinori Fujiki
藤木　良規
Yoshito Onoda
義人 小野田
Jun Watanabe
遵 渡辺
Tadashi Ohachi
忠 大鉢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Materials Science
Original Assignee
National Institute for Research in Inorganic Material
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Research in Inorganic Material filed Critical National Institute for Research in Inorganic Material
Priority to JP61081622A priority Critical patent/JPS62241821A/ja
Priority to US07/013,433 priority patent/US4818735A/en
Publication of JPS62241821A publication Critical patent/JPS62241821A/ja
Publication of JPH0242770B2 publication Critical patent/JPH0242770B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Compounds Of Iron (AREA)
  • Conductive Materials (AREA)
  • Primary Cells (AREA)
JP61081622A 1986-02-14 1986-04-09 陽イオン伝導体 Granted JPS62241821A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP61081622A JPS62241821A (ja) 1986-04-09 1986-04-09 陽イオン伝導体
US07/013,433 US4818735A (en) 1986-02-14 1987-02-11 Tetragonal system tunnel-structured compound AX(GA8MYGA(8+X)-YTI16-X0 56), and cation conductor and heat insulating material composed thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61081622A JPS62241821A (ja) 1986-04-09 1986-04-09 陽イオン伝導体

Publications (2)

Publication Number Publication Date
JPS62241821A true JPS62241821A (ja) 1987-10-22
JPH0242770B2 JPH0242770B2 (enrdf_load_stackoverflow) 1990-09-26

Family

ID=13751428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61081622A Granted JPS62241821A (ja) 1986-02-14 1986-04-09 陽イオン伝導体

Country Status (1)

Country Link
JP (1) JPS62241821A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02277823A (ja) * 1989-04-19 1990-11-14 Natl Inst For Res In Inorg Mater Ａ↓ｘＧａ↓１↓６↓＋↓ｘＴｉ↓１↓６↓−↓ｘＯ↓５↓６で示される正方晶系トンネル構造化合物の繊維又は膜状物の製造法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02277823A (ja) * 1989-04-19 1990-11-14 Natl Inst For Res In Inorg Mater Ａ↓ｘＧａ↓１↓６↓＋↓ｘＴｉ↓１↓６↓−↓ｘＯ↓５↓６で示される正方晶系トンネル構造化合物の繊維又は膜状物の製造法

Also Published As

Publication number Publication date
JPH0242770B2 (enrdf_load_stackoverflow) 1990-09-26

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term