JPS6223979A - マグネトロンスパツタリング用タ−ゲツト - Google Patents

マグネトロンスパツタリング用タ−ゲツト

Info

Publication number
JPS6223979A
JPS6223979A JP16316085A JP16316085A JPS6223979A JP S6223979 A JPS6223979 A JP S6223979A JP 16316085 A JP16316085 A JP 16316085A JP 16316085 A JP16316085 A JP 16316085A JP S6223979 A JPS6223979 A JP S6223979A
Authority
JP
Japan
Prior art keywords
target
magnet
main magnet
main
annular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16316085A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0241585B2 (enExample
Inventor
Katsuya Okumura
勝弥 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP16316085A priority Critical patent/JPS6223979A/ja
Publication of JPS6223979A publication Critical patent/JPS6223979A/ja
Publication of JPH0241585B2 publication Critical patent/JPH0241585B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP16316085A 1985-07-24 1985-07-24 マグネトロンスパツタリング用タ−ゲツト Granted JPS6223979A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16316085A JPS6223979A (ja) 1985-07-24 1985-07-24 マグネトロンスパツタリング用タ−ゲツト

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16316085A JPS6223979A (ja) 1985-07-24 1985-07-24 マグネトロンスパツタリング用タ−ゲツト

Publications (2)

Publication Number Publication Date
JPS6223979A true JPS6223979A (ja) 1987-01-31
JPH0241585B2 JPH0241585B2 (enExample) 1990-09-18

Family

ID=15768369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16316085A Granted JPS6223979A (ja) 1985-07-24 1985-07-24 マグネトロンスパツタリング用タ−ゲツト

Country Status (1)

Country Link
JP (1) JPS6223979A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001140069A (ja) * 1999-11-12 2001-05-22 Anelva Corp スパッタリング装置のマグネトロンカソード
CN103046009A (zh) * 2011-10-13 2013-04-17 鸿富锦精密工业(深圳)有限公司 平面磁控溅射阴极
EP2661514A4 (en) * 2011-01-06 2015-12-30 Sputtering Components Inc sputtering
US9758862B2 (en) 2012-09-04 2017-09-12 Sputtering Components, Inc. Sputtering apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0511677U (ja) * 1991-07-26 1993-02-12 ソニー株式会社 カードコマンダ

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001140069A (ja) * 1999-11-12 2001-05-22 Anelva Corp スパッタリング装置のマグネトロンカソード
EP2661514A4 (en) * 2011-01-06 2015-12-30 Sputtering Components Inc sputtering
USRE46599E1 (en) 2011-01-06 2017-11-07 Sputtering Components Inc. Sputtering apparatus
CN103046009A (zh) * 2011-10-13 2013-04-17 鸿富锦精密工业(深圳)有限公司 平面磁控溅射阴极
US9758862B2 (en) 2012-09-04 2017-09-12 Sputtering Components, Inc. Sputtering apparatus

Also Published As

Publication number Publication date
JPH0241585B2 (enExample) 1990-09-18

Similar Documents

Publication Publication Date Title
JP3655334B2 (ja) マグネトロンスパッタリング装置
KR100212087B1 (ko) 스퍼터링 장치
US5133850A (en) Sputtering cathode for coating substrates in cathode sputtering apparatus
CN112011771B (zh) 偏置磁场控制方法、磁性薄膜沉积方法、腔室及设备
US5330632A (en) Apparatus for cathode sputtering
JPH02163373A (ja) 薄膜形成装置
JPS6223979A (ja) マグネトロンスパツタリング用タ−ゲツト
JPH0362789B2 (enExample)
TW201335411A (zh) 磁控濺鍍用磁場產生裝置
KR850008362A (ko) 스퍼터코팅 장치 및 방법
JP3411312B2 (ja) マグネトロン・スパッタカソードおよび膜厚分布の調整方法
JPH03170668A (ja) 平板マグネトロンスパッタリング装置
JPH0154431B2 (enExample)
JPS6217175A (ja) スパツタリング装置
JP4489868B2 (ja) カソード電極装置及びスパッタリング装置
JP2835462B2 (ja) スパッタ装置
JPH0726203B2 (ja) マグネトロンスパッタリング装置
GB2209769A (en) Sputter coating
JPH01283372A (ja) マグネトロンスパッタリング装置
JP2580149B2 (ja) スパツタ装置
JPH07157875A (ja) マグネトロンスパッタ用磁気回路
JPH02163371A (ja) マグネトロンスパッタ装置
JPS63227772A (ja) マグネトロンスパツタ用タ−ゲツト
JPH0726377A (ja) マグネトロン型スパッタカソード
JPH0445267A (ja) スパッタリング装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term