JPS62239521A - Manufacturing device for semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To unify the electric field intensity between electrode plates by a method wherein a region of electrode plate mounting a semiconductor substrate is insulated from the other regions while the voltage impressed upon respective regions are controlled. CONSTITUTION:Within a pair of parallel electrode plates 1, a part mounting a semiconductor substrate 2 and the other parts are electrically insulated from each other by insulators 6. Electric field measuring devices 3 measure the electric field intensity on the parts perpendicular to the surface of semiconductor substrate 2 and the other parts to input the measured output signals (a) to a controller 4. The controller 4 controls the output voltage from high-frequency oscillators 5 so that the electric field intensity between the electric plates 2 perpendicular to the surface of substrate 2 may be equalized to that of any other parts. Through these procedures, the etching rate can be prevented from being differentiated between the central part and the peripheral part of substrate 2 making it feasible to form even films.

Description

DETAILED DESCRIPTION OF THE INVENTION [4] Industrial Application Field The present invention relates to a plasma CVD or plasma etching apparatus.

[Conventional technology]

Conventionally, in this type of device, a semiconductor substrate is attached to opposing parallel planar electrode plates, and a high frequency voltage is applied between the two electrode plates to activate the reaction gas and cause it to react on the surface of the semiconductor substrate. be.

[Problem that the invention seeks to solve]

In the conventional plasma CVD or plasma etching apparatus described above, the voltage applied between the thousand-square and square-shaped electrode plates is constant on one side of the electrode plate. However, since the semiconductor substrate has an internal electric field, the electric field strength in the region perpendicular to the surface of the semiconductor substrate between the electrode plates and in other regions is different. Therefore, a difference occurs in the electric field strength between the periphery of the substrate and the center of the substrate, which are near the interface between two regions having different electric field strengths.

On the other hand, a difference in field strength causes a difference in film quality and growth rate in a plasma CVD apparatus, and a difference in etching rate in a plasma etching apparatus.

Therefore, the above-mentioned conventional plasma CVD or plasma etching equipment uses plasma C at the periphery and center of the semiconductor substrate.
For a VD device? However, there are disadvantages in that there are differences in growth rate and film quality in some cases, and differences in etching rate in plasma etching apparatuses.

[Means for solving problems]

The plasma CVD or plasma etching apparatus of the present invention includes a device that measures electric field strength directly or indirectly using other parameters in a portion perpendicular to the surface of a semiconductor substrate between electrode plates and in other portions; ′lX′rM slope electrically insulated from one part and another part′
': A high-frequency oscillator that can apply high-frequency waves with different voltages to the dowel part of the semiconductor substrate on the X electrode plate and other parts, and a part perpendicular to the surface of the semiconductor substrate between the electrode plates 1 and It has a control device that adjusts the application of four high-frequency voltages so that the electric field strength in other parts is the same.

〔Example〕

Next, one embodiment of the present invention will be explained with reference to the drawings.

FIG. 1 is a diagram schematically representing an embodiment of the present invention.

The parallel plate electrode plate 1 is electrically insulated from one part of the semiconductor substrate 2 to another part by an insulator 6. While the high-frequency voltage is being applied, the electric field strength Z is measured directly or indirectly at the part perpendicular to the surface of the semiconductor substrate 2 between the electrode plates and at other parts using the electric field strength Z measuring device 3. It is transmitted to the control device 4. The control device 4 controls the output voltage of the high frequency oscillation device 5 so that the electric field strength between the electrode plates is the same in a portion perpendicular to the surface of the semiconductor substrate 2 and in other portions.

〔Effect of the invention〕

As explained above, one aspect of the present invention is to apply different high-frequency voltages to the electrode plate 1 in one part of the semiconductor substrate 2 and in another part, and to change the electric field strength between the electrode plates to the part perpendicular to the surface of the semiconductor substrate. It also has the effect of keeping other parts the same.

With this, the present invention can be applied to a plasma CVD apparatus.
Regarding growth rate and film quality, the plasma etching apparatus has the effect of making it possible to eliminate the difference in etching rate between the center and the periphery of the semiconductor substrate, and to enable more uniform film formation and etching.

[Brief explanation of drawings]

FIG. 1 is a diagram schematically showing an embodiment of the present invention. 1...Parallel plate type electrode plate, 2...Semiconductor substrate. 3...Device for measuring electric field strength, 4...
- A control device 5 for controlling the output of the high frequency oscillation device 5 based on the measured value of the device 3 that measures the strength of the electric field.
...High frequency oscillator, 6...Insulator. Agent Patent Attorney Susumu Uchihara, - Kaya 1F

Claims (1)

[Claims] In parallel plate type plasma CVD or plasma etching equipment, by insulating a certain area of the semiconductor substrate of the electrode plate from other parts and adjusting the voltage applied to each area, the area between the electrode plates is perpendicular to the surface of the semiconductor substrate. 1. An apparatus for manufacturing a semiconductor integrated circuit device, comprising a mechanism for maintaining the same electric field strength in a region and other regions.