JPS62225915A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

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Publication number
JPS62225915A
JPS62225915A JP61071740A JP7174086A JPS62225915A JP S62225915 A JPS62225915 A JP S62225915A JP 61071740 A JP61071740 A JP 61071740A JP 7174086 A JP7174086 A JP 7174086A JP S62225915 A JPS62225915 A JP S62225915A
Authority
JP
Japan
Prior art keywords
voltage
circuit
output
amplifying circuit
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61071740A
Other languages
Japanese (ja)
Inventor
Atsuo Yamaguchi
敦男 山口
Tomohiro Mizuno
水野 倫博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61071740A priority Critical patent/JPS62225915A/en
Publication of JPS62225915A publication Critical patent/JPS62225915A/en
Pending legal-status Critical Current

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  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Picture Signal Circuits (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To fluctuate the output of a voltage amplifying circuit around a predetermined reference voltage between GND and the voltage of a power source, by feeding back the output of a peak holding circuit to the input side of the voltage amplifying circuit. CONSTITUTION:After optical input is detected by a light detection element 1, the output of a current/voltage converting circuit 14 is amplified by a voltage amplifying circuit 15. That is, the peak value of the output voltage of the voltage amplifying circuit 15 is held to a peak holding circuit 11 and the output thereof is fed back to the input side of the voltage amplifying circuit 15 through a resistor 13 of which the resistance value is properly selected with respect to the resistance value of a resistor 6. By this method, the output of the voltage amplifying circuit 15 fluctuates around voltage VA. The output of the voltage amplifying circuit 15 is compared on the basis of the voltage VA by a voltage comparator 12 to obtain digital output as shown by d.

Description

【発明の詳細な説明】 [産業上の利用分野] この発明は光検出素子の出力電流をディジタル信号に変
換する半導体集積回路に関し、特に入力のダイナミック
レンジを改善した半導体集積回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit that converts the output current of a photodetecting element into a digital signal, and more particularly to a semiconductor integrated circuit with improved input dynamic range.

[従来の技術] 第3図は、従来の半導体集積回路の構成を示す回路図で
ある。初めにこの回路の構成について説明する。図にお
いて、光検出素子1の出力側は、増幅器2と抵抗3とか
ら構成される反転増幅器からなる電流・電圧変換回路1
4の入力側に接続される。光検出素子1は光入力を検出
し、検出した光量に応じた電流を出力する。電流・電圧
変換回路14は入力電流を電圧に変換して出力する。電
流・電圧変換回路14の出力側は、抵抗4と増幅器5と
抵抗6とから構成される反転増幅器からなる電圧増幅回
路15の入力側に接続される。電圧増幅回路15は入力
電圧を反転増幅して出力する。
[Prior Art] FIG. 3 is a circuit diagram showing the configuration of a conventional semiconductor integrated circuit. First, the configuration of this circuit will be explained. In the figure, the output side of the photodetector element 1 is a current/voltage conversion circuit 1 consisting of an inverting amplifier composed of an amplifier 2 and a resistor 3.
Connected to the input side of 4. The photodetector element 1 detects light input and outputs a current according to the detected amount of light. The current/voltage conversion circuit 14 converts an input current into a voltage and outputs the voltage. The output side of the current/voltage conversion circuit 14 is connected to the input side of a voltage amplification circuit 15 made up of an inverting amplifier made up of a resistor 4, an amplifier 5, and a resistor 6. The voltage amplification circuit 15 inverts and amplifies the input voltage and outputs it.

電圧増幅回路15の出力側は、電圧比較器12の一方の
入力側に接続されるとともに、抵抗9を介してピークホ
ールド回路11の入力側に接続される。増幅器7と抵抗
8とは反転増幅器からなる基準電圧発生回路16を構成
し、この基準電圧発生回路16の出力側は、抵抗10を
介して抵抗9とピークホールド回路11の入力側との接
続点に接続される。増幅器2、増幅器5および増幅器7
は同じ特性を有し、基準電圧発生回路16は、光検出素
子1に光入力がないときの増幅器2.5の出力電圧、す
なわち増幅器2,5の無信号時のDCレベルと同じ電圧
■、を出力する。ピークホールド回路11は入力される
電圧のピーク値をホールドする。ピークホールド回路1
1の出力側は電圧比較器12の他方の入力側に接続され
る。
The output side of the voltage amplification circuit 15 is connected to one input side of the voltage comparator 12, and is also connected to the input side of the peak hold circuit 11 via a resistor 9. Amplifier 7 and resistor 8 constitute a reference voltage generation circuit 16 consisting of an inverting amplifier, and the output side of this reference voltage generation circuit 16 is a connection point between resistor 9 and the input side of peak hold circuit 11 via resistor 10. connected to. Amplifier 2, Amplifier 5 and Amplifier 7
have the same characteristics, and the reference voltage generating circuit 16 generates the output voltage of the amplifier 2.5 when there is no optical input to the photodetecting element 1, that is, the same voltage as the DC level of the amplifiers 2 and 5 when there is no signal. Output. The peak hold circuit 11 holds the peak value of the input voltage. Peak hold circuit 1
The output side of 1 is connected to the other input side of voltage comparator 12.

次に、この回路の動作を第4図の信号波形図を参照しな
がら説明する。光検出素子1は検出した光量に応じた電
流を出力しく第4図(a ) ’) 、この電流は電流
・電圧変換回路14により電圧に変換される(第4図(
b))。電流・電圧変換回路14出力は電圧増幅回路1
5により増幅され(第4図(C) ) 、電圧増幅回路
15出力は電圧比較器12の一方の入力側に与えられる
。また、電圧増幅回路15出力電圧とMttP、電圧発
生回路16出力電圧との差は抵抗9.10ににり約1.
/2に分圧され、この分圧された電圧はピークホールド
回路11に与えられる。このため、ピークホールド回路
11には電圧変換回路15出力電圧のピーク値の約1/
2の値がホールドされ、このホールドされた値は入力信
号のパルス幅に無関係になる。
Next, the operation of this circuit will be explained with reference to the signal waveform diagram in FIG. The photodetecting element 1 outputs a current corresponding to the detected amount of light (Fig. 4(a)'), and this current is converted into a voltage by the current/voltage conversion circuit 14 (Fig. 4(a)').
b)). Current/voltage conversion circuit 14 output is voltage amplification circuit 1
5 (FIG. 4(C)), and the output of the voltage amplifying circuit 15 is applied to one input side of the voltage comparator 12. Also, the difference between the output voltage of the voltage amplifier circuit 15 and the output voltage of the MttP and voltage generation circuit 16 is approximately 1.
/2, and this divided voltage is applied to the peak hold circuit 11. Therefore, the peak hold circuit 11 has approximately 1/1/2 of the peak value of the output voltage of the voltage conversion circuit 15.
A value of 2 is held, and this held value is independent of the pulse width of the input signal.

電圧比較器12は、電圧増幅回路15出力とピークホー
ルド回路11出力とを比較することにより、電圧増幅回
路15出力をディジタル出力に変換しく第4図(d))
、このようにして光検出素子1出力信号のパルス幅を変
動させずに光検出素子1出力電流をディジタル信号に変
換する。
The voltage comparator 12 converts the output of the voltage amplification circuit 15 into a digital output by comparing the output of the voltage amplification circuit 15 and the output of the peak hold circuit 11 (Fig. 4(d)).
In this way, the output current of the photodetector 1 is converted into a digital signal without changing the pulse width of the photodetector 1 output signal.

[発明が解決しようとする問題点] ところで、従来の半導体集積回路では、電圧増幅回路1
5出力を電圧V、と電源電圧Vecどの間で振らせてい
るため1回路の入力をあまり大きくできない。また、電
圧増幅回路15出力電圧と基準電圧発生回路16出力電
圧VAとの差を約17/2に分圧しているため、分圧し
ない場合に比べてピークホールド回路11出力の誤差が
相対的に約2倍になり、回路の入力が小さくなればその
影響が大きくなる。このため、従来の集積回路では、回
路の入力のダイナミックレンジを大きくとれないという
問題点があった。
[Problems to be Solved by the Invention] By the way, in the conventional semiconductor integrated circuit, the voltage amplifier circuit 1
Since the five outputs are made to swing between the voltage V and the power supply voltage Vec, the input of one circuit cannot be made very large. In addition, since the difference between the output voltage of the voltage amplifier circuit 15 and the output voltage VA of the reference voltage generation circuit 16 is divided into approximately 17/2, the error in the output of the peak hold circuit 11 is relatively smaller than when the voltage is not divided. This is approximately twice as large, and the smaller the input to the circuit, the greater the effect. For this reason, conventional integrated circuits have had the problem of not being able to provide a large dynamic range of input to the circuit.

この発明は上記のような問題点を解消するためになされ
たもので、回路の入力のダイナミックレンジを大きくと
ることができる半導体集積回路を得ることを目的とする
The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to obtain a semiconductor integrated circuit that can widen the dynamic range of input to the circuit.

[問題点を解決するための手段] この発明に係る半導体集積回路は、光検出素子により光
入力を電流に変換し、電流・電圧変換口路により光検出
素子出力を電圧に変換し、電圧増幅回路により電流・電
圧変換回路出力を増幅し、ピークホールド回路により電
圧増幅回路出力のピーク値をホールドし、このピーク値
を電圧増幅回路の入力側にフィードバックし、基準電圧
発生回路により予め定めるレベルの基準電圧を発生し、
電圧比較器により電圧増幅回路出力と基準電圧とを比較
してこの電圧増幅回路出力をディジタル出力に変換する
ようにしたものである。
[Means for Solving the Problems] The semiconductor integrated circuit according to the present invention converts optical input into a current using a photodetecting element, converts the output of the photodetecting element into a voltage using a current/voltage conversion path, and performs voltage amplification. The circuit amplifies the current/voltage conversion circuit output, the peak hold circuit holds the peak value of the voltage amplification circuit output, this peak value is fed back to the input side of the voltage amplification circuit, and the reference voltage generation circuit generates a predetermined level. Generates a reference voltage,
The output of the voltage amplification circuit is compared with a reference voltage using a voltage comparator, and the output of the voltage amplification circuit is converted into a digital output.

[作用] この発明においては、ピークホールド回路出力を電圧増
幅回路の入力側にフィードバックすることにより、電圧
増幅回路出力を予め定める基準電圧vAを中心にGND
からta電圧Vceの間で振らせる。また、電圧増幅回
路出力をそのままピークホールド回路に入力するので、
ピークホールド回路出力の誤差の影響を少なくできる。
[Function] In this invention, by feeding back the peak hold circuit output to the input side of the voltage amplification circuit, the voltage amplification circuit output is grounded around a predetermined reference voltage vA.
and ta voltage Vce. Also, since the output of the voltage amplification circuit is directly input to the peak hold circuit,
The influence of errors in the peak hold circuit output can be reduced.

[実施例] 以下、この発明の実施例を図について説明する。[Example] Embodiments of the present invention will be described below with reference to the drawings.

なお、この実施例の説明において、従来の技術の説明と
重複する部分については適宜その説明を省略する。
In the description of this embodiment, the description of parts that overlap with the description of the conventional technology will be omitted as appropriate.

第1図は、この発明の実施例である半導体集積回路の構
成を示す回路図である。この実施例の構成が第3図の構
成と異なる点は以下の点である。
FIG. 1 is a circuit diagram showing the configuration of a semiconductor integrated circuit according to an embodiment of the present invention. The configuration of this embodiment differs from the configuration shown in FIG. 3 in the following points.

すなわち、抵抗9.10が取除かれ、電圧増幅回路15
の出力側は、電圧比較器12の一方の入力側に接続され
るとともに、ピークホールド回路11、抵抗13を介し
て電圧増幅回路15の入力側に接続される。そして、基
準電圧発生回路16の出力側は直接電圧比較器12の他
方の入力側に接続される。なお、増幅器2、増幅器5お
よび増幅器8は、従来の回路の場合と同様、同じ特性を
有しており、11準電圧発生回路16は増幅器2.増幅
器5の無信号時のDCレベルど同じ電圧■6を出力する
That is, resistor 9.10 is removed and voltage amplification circuit 15
The output side of is connected to one input side of a voltage comparator 12, and is also connected to the input side of a voltage amplification circuit 15 via a peak hold circuit 11 and a resistor 13. The output side of the reference voltage generation circuit 16 is directly connected to the other input side of the voltage comparator 12. Note that amplifier 2, amplifier 5, and amplifier 8 have the same characteristics as in the case of the conventional circuit, and 11 quasi-voltage generating circuit 16 has the same characteristics as amplifier 2. It outputs the same voltage 6 as the DC level of the amplifier 5 when there is no signal.

次に、この回路の動作について第2図の信号波形図を参
照しながら説明する。光検出素子1で光入力が検出され
た後、電流・電圧変換回路14出力を電圧増幅回路15
により増幅するまでは従来の回路の動作と同じである。
Next, the operation of this circuit will be explained with reference to the signal waveform diagram in FIG. After the optical input is detected by the photodetection element 1, the output of the current/voltage conversion circuit 14 is transferred to the voltage amplification circuit 15.
The operation is the same as that of the conventional circuit until amplification is performed.

この実施例では、光検出素子1に光入力がないときの電
圧増幅回路15出力を電圧vAを!!準としてピークホ
ールド回路11出力の一1倍に設定する。すなわち、電
圧増幅回路15出力電圧のピーク値をピークホールド回
路11でホールドし、ピークホールド回路11出力を、
抵抗6の抵抗値に対してその抵抗値が適当に選択された
抵抗13を介して電圧増幅回路15の入力側にフィード
バックすることによって、電圧増幅回路15出力は電圧
vAを中心に触れることになる(第2図(C))。そし
て、電圧比較器12により電圧増幅回路15出力がこの
電圧V8を!!準として比較されて第2図(d)のよう
なディジタル出力が得られ、このようにして光検出素子
1出力信号のパルス幅を変動させずに光検出素子1出力
電流をディジタル信号に変換する。
In this embodiment, when there is no optical input to the photodetector element 1, the output of the voltage amplifier circuit 15 is set to the voltage vA! ! As a standard, it is set to 11 times the output of the peak hold circuit 11. That is, the peak value of the output voltage of the voltage amplifier circuit 15 is held by the peak hold circuit 11, and the output of the peak hold circuit 11 is
By feeding back the resistance value of the resistor 6 to the input side of the voltage amplifying circuit 15 via the appropriately selected resistor 13, the output of the voltage amplifying circuit 15 will touch the voltage vA as the center. (Figure 2 (C)). Then, the voltage comparator 12 outputs this voltage V8 from the voltage amplifier circuit 15! ! The output current of the photodetector 1 is converted into a digital signal without changing the pulse width of the photodetector 1 output signal. .

このように、電圧増幅回路15出力をGNDから電源電
圧Vceの間で振らせることができるので、半導体集積
回路の入力が大きくとれる。また、電圧増幅回路15出
力をそのままピークホールド回路11に入力しているの
で、回路の入力が小さいときでもピークホールド回路1
1出力の誤差の影響を少なくできる。このため、半導体
集積回路の入力のダイナミックレンジを従来の回路に比
べて大きくとることができる。
In this way, since the output of the voltage amplifier circuit 15 can be made to swing between GND and the power supply voltage Vce, the input of the semiconductor integrated circuit can be increased. In addition, since the output of the voltage amplification circuit 15 is directly input to the peak hold circuit 11, even when the input to the circuit is small, the peak hold circuit 11
The influence of errors in one output can be reduced. Therefore, the input dynamic range of the semiconductor integrated circuit can be made larger than that of conventional circuits.

[発明の効果] 以上のようにこの発明によれば、ピークホールド回路に
より電圧増幅回路w力のピーク値をホールドし、このピ
ーク値を電圧増幅回路の入力側にフィードバックするの
で、電圧増幅回路出力を予め定める基準電圧VAを中心
にGNDから電源電圧Vccの間で振らせることができ
る。また、電圧増幅回路出力をそのままピークホールド
回路に入力するので、ピークホールド回路出力の誤差の
影響を少なくできる。このため、光検出素子の出力電流
をディジタル信号に変換する半導体集積回路の入力のダ
イナミックレンジを大きくとることができる。
[Effects of the Invention] As described above, according to the present invention, the peak hold circuit holds the peak value of the voltage amplification circuit w power, and this peak value is fed back to the input side of the voltage amplification circuit, so that the voltage amplification circuit output can be made to swing between GND and power supply voltage Vcc around a predetermined reference voltage VA. Furthermore, since the output of the voltage amplification circuit is directly input to the peak hold circuit, the influence of errors in the output of the peak hold circuit can be reduced. Therefore, the dynamic range of the input to the semiconductor integrated circuit that converts the output current of the photodetecting element into a digital signal can be increased.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、この発明の実施例である半導体集積回路の構
成を示す回路図である。 第2図は、第1図の半導体集積回路の動作を説明するた
めの信号波形図である。 第3図は、従来の半導体集積回路の構成を示す回路図で
ある。 第4図は、第3図の半導体集積回路の動作を説明するた
めの信号波形図である。 図において、1は光検出素子、2.5.7は増幅器、3
,4.6.8.13は抵抗、12は電圧比較器、14は
電流・電圧変換回路、15は電圧増幅回路、16は基準
電圧発生回路である。 なお、各図中同一符号は同一または相当部分を示す。
FIG. 1 is a circuit diagram showing the configuration of a semiconductor integrated circuit according to an embodiment of the present invention. FIG. 2 is a signal waveform diagram for explaining the operation of the semiconductor integrated circuit of FIG. 1. FIG. 3 is a circuit diagram showing the configuration of a conventional semiconductor integrated circuit. FIG. 4 is a signal waveform diagram for explaining the operation of the semiconductor integrated circuit of FIG. 3. In the figure, 1 is a photodetector element, 2.5.7 is an amplifier, and 3
, 4.6.8.13 are resistors, 12 is a voltage comparator, 14 is a current/voltage conversion circuit, 15 is a voltage amplification circuit, and 16 is a reference voltage generation circuit. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (3)

【特許請求の範囲】[Claims] (1)光入力を電流に変換する光検出素子と、前記光検
出素子出力を電圧に変換する電流・電圧変換回路と、 前記電流・電圧変換回路出力を増幅する電圧増幅回路と
、 前記電圧増幅回路出力のピーク値をホールドし、該ピー
ク値を該電圧増幅回路の入力側にフィードバックするピ
ークホールド回路と、 予め定めるレベルの基準電圧を発生する基準電圧発生回
路と、 前記電圧増幅回路出力と前記基準電圧とを比較して該電
圧増幅回路出力をディジタル出力に変換する電圧比較器
とを備えた半導体集積回路。
(1) A photodetection element that converts optical input into a current, a current/voltage conversion circuit that converts the output of the photodetection element into a voltage, a voltage amplification circuit that amplifies the output of the current/voltage conversion circuit, and the voltage amplification circuit. a peak hold circuit that holds a peak value of a circuit output and feeds the peak value back to the input side of the voltage amplification circuit; a reference voltage generation circuit that generates a reference voltage at a predetermined level; A semiconductor integrated circuit comprising a voltage comparator that compares the output of the voltage amplifier circuit with a reference voltage and converts the output of the voltage amplifier circuit into a digital output.
(2)前記電圧変換回路、前記電圧増幅回路および前記
基準電圧発生回路はそれぞれ同じ特性の反転増幅器であ
る特許請求の範囲第1項記載の半導体集積回路。
(2) The semiconductor integrated circuit according to claim 1, wherein the voltage conversion circuit, the voltage amplification circuit, and the reference voltage generation circuit are inverting amplifiers having the same characteristics.
(3)前記基準電圧は、前記ピークホールド回路が設け
られていない場合において、前記光入力がないときの前
記電圧増幅回路のDCレベルに等しい特許請求の範囲第
1項または第2項記載の半導体集積回路。
(3) The semiconductor according to claim 1 or 2, wherein the reference voltage is equal to the DC level of the voltage amplification circuit when there is no optical input in the case where the peak hold circuit is not provided. integrated circuit.
JP61071740A 1986-03-26 1986-03-26 Semiconductor integrated circuit Pending JPS62225915A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61071740A JPS62225915A (en) 1986-03-26 1986-03-26 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61071740A JPS62225915A (en) 1986-03-26 1986-03-26 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS62225915A true JPS62225915A (en) 1987-10-03

Family

ID=13469224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61071740A Pending JPS62225915A (en) 1986-03-26 1986-03-26 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS62225915A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01107735A (en) * 1987-10-20 1989-04-25 Citizen Watch Co Ltd Sphygmocardioscope

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01107735A (en) * 1987-10-20 1989-04-25 Citizen Watch Co Ltd Sphygmocardioscope

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