JPS6222447B2 - - Google Patents

Info

Publication number
JPS6222447B2
JPS6222447B2 JP54001945A JP194579A JPS6222447B2 JP S6222447 B2 JPS6222447 B2 JP S6222447B2 JP 54001945 A JP54001945 A JP 54001945A JP 194579 A JP194579 A JP 194579A JP S6222447 B2 JPS6222447 B2 JP S6222447B2
Authority
JP
Japan
Prior art keywords
solder
semiconductor element
oxide film
welded
predetermined portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54001945A
Other languages
Japanese (ja)
Other versions
JPS5593231A (en
Inventor
Makoto Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP194579A priority Critical patent/JPS5593231A/en
Publication of JPS5593231A publication Critical patent/JPS5593231A/en
Publication of JPS6222447B2 publication Critical patent/JPS6222447B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は、半導体素子をソルダー等のロウ剤を
用いてリードフレームなどの基板に固着する半導
体装置の組立方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for assembling a semiconductor device, in which a semiconductor element is fixed to a substrate such as a lead frame using a brazing agent such as solder.

従来の組立方法は、次の様な2通りの代表的な
方法が掲げられる。第1の方法はテープ状のソル
ダーを必要な大きさにパンチであらかじめ抜いて
形成して半導体素子を搭載する基板上におき、こ
のソルダーを載置した基板が組立装置の加熱部に
到達する際に基板上で溶解させ、このときできる
酸化被膜を次の工程で除去し、半導体素子を酸化
被膜の除去されたソルダー上にもつて行き半導体
素子を数回左右に回転させるか、前後に往復させ
るかして溶着する方法である。第2の方法は、第
1の方法とかなり類似しているが、ソルダーが溶
解したときにできる溶着ソルダーの酸化被膜を除
去せず半導体素子を直接もつていき数回左右に回
転させたり、往復させるかして溶着する方法であ
る。
There are two typical conventional assembly methods as follows. The first method is to punch out a tape-shaped solder to the required size and place it on the board on which the semiconductor element will be mounted. The oxide film formed at this time is removed in the next step, and the semiconductor element is placed on the solder from which the oxide film has been removed, and the semiconductor element is rotated left and right several times or reciprocated back and forth. This is a method of welding. The second method is quite similar to the first method, but it does not remove the oxide film of the welded solder that is formed when the solder melts, and instead carries the semiconductor element directly and rotates it left and right several times, or reciprocates. This is a method of welding.

第1図、第2図はそれぞれ前記従来の代表的な
第1,第2の組立方法を説明するための組立装置
の断面図及びその部分拡大図である。
FIGS. 1 and 2 are a sectional view and a partially enlarged view of an assembly apparatus for explaining the conventional typical first and second assembly methods, respectively.

第1図aにおいて、半導体素子9を搭載する基
板1は矢印の方向に送られて行く。テープ状のソ
ルダー2はポンチ3で所定の大きさに打ち抜かれ
基板1上に圧着される。このとき、所定の大きさ
に打ち抜かれたソルダー13は基板1に予備加熱
部4によつて溶着される。但しこの部分ではソル
ダー13は完全にはとけないが、本加熱部6に送
られると、ソルダー13は溶解して溶着ソルダー
7となる。この本加熱部6に送られる時ソルダー
7に酸化被膜12が発生する(第1図b)。
In FIG. 1a, the substrate 1 on which the semiconductor element 9 is mounted is fed in the direction of the arrow. The tape-shaped solder 2 is punched out to a predetermined size using a punch 3 and pressed onto the substrate 1. At this time, the solder 13 punched out to a predetermined size is welded to the substrate 1 by the preheating section 4. However, the solder 13 is not completely melted in this part, but when it is sent to the main heating section 6, the solder 13 is melted and becomes the welded solder 7. When the solder 7 is sent to the main heating section 6, an oxide film 12 is formed on the solder 7 (FIG. 1b).

次に、溶着ソルダー7の表面上にできた酸化被
膜12を除去するため、酸化膜除去具8を溶融ソ
ルダー7の上部につけ強制的に酸化被膜12を除
去し(第1図c)、真空チヤツク10で半導体素
子9を酸化被膜12の除去されたソルダー7上に
のせ数回左右に回転させるか、前後に往復させて
半導体素子9とソルダー7を溶着する。第2図の
場合はこの酸化膜除去具8を用いない場合であ
り、表面に酸化被膜12が被覆されたソルダー7
に直接真空チヤツク10で半導体素子9をのせ、
数回左右に回転させたり、往復させて溶着する。
Next, in order to remove the oxide film 12 formed on the surface of the molten solder 7, the oxide film remover 8 is applied to the top of the molten solder 7, and the oxide film 12 is forcibly removed (Fig. 1c). At step 10, the semiconductor element 9 is placed on the solder 7 from which the oxide film 12 has been removed, and the semiconductor element 9 and the solder 7 are welded by rotating it left and right several times or by moving it back and forth. In the case of FIG. 2, this oxide film remover 8 is not used, and the solder 7 whose surface is coated with an oxide film 12 is shown.
Place the semiconductor element 9 directly on the vacuum chuck 10,
Rotate it left and right several times or go back and forth to weld.

これらの方法では、第1図の場合酸化被膜を除
去する工程があり、第2図では酸化被膜12を除
去するため回転させたり、往復させる回数が増す
ために作業速度が著しく遅くなる。又基板1とテ
ープ状ソルダー2とを溶着した後も予備加熱部
4、支持台30の上に長時間あり、そのためソル
ダー13の酸化防止手段を施こす必要があるため
ガスカバー5で覆つて窒素等の酸化防止ガス11
を通すなど組立装置自体が複雑化されるという大
きな欠点が掲げられる。
In these methods, in the case of FIG. 1, there is a step of removing the oxide film, and in the case of FIG. 2, the number of rotations and reciprocations increases to remove the oxide film 12, which significantly slows down the work speed. Furthermore, even after the substrate 1 and the tape-shaped solder 2 are welded, they remain on the preheating section 4 and the support stand 30 for a long time, so it is necessary to take measures to prevent the solder 13 from oxidizing. Antioxidant gas such as 11
A major drawback is that the assembly equipment itself becomes complicated, such as passing through the wire.

本発明は上記の諸欠点を無くし組立工程を短縮
しさらに組立装置を簡略化できる半導体装置の組
立方法を提供する。本発明による組立方法は、支
持台上を水平方向に送られてくる搭載基板の所定
部が支持台の一部に設けられた加熱部上に位置し
た際に、ワイヤ化したロウ剤を一定量を送り出し
て加熱された前記所定部の表面に所定量のロウ剤
を溶着せしめ、前記所定部が前記加熱部上にある
うちにかつ溶着したロウ剤の表面に酸化被膜がで
きる時間的余裕を与えずに半導体素子を溶着した
ロウ剤上に降下させて接着させることを特徴とし
ている。
The present invention provides a method for assembling a semiconductor device that eliminates the above-mentioned drawbacks, shortens the assembly process, and simplifies the assembly equipment. In the assembly method according to the present invention, when a predetermined part of a mounting board that is being fed horizontally on a support stand is positioned on a heating part provided in a part of the support stand, a certain amount of brazing agent made into a wire is applied. A predetermined amount of brazing agent is welded to the heated surface of the predetermined portion, and while the predetermined portion is on the heating portion, time is provided for an oxide film to form on the surface of the welded brazing agent. The method is characterized in that the semiconductor element is lowered onto the welded brazing agent and bonded to the solder.

次に図面により本発明の一実施例を具体的に説
明する。
Next, one embodiment of the present invention will be specifically described with reference to the drawings.

第3図は本発明の一実施例を説明するための組
立装置の断面図及び部分拡大図であり、第1,2
図と同一のところは同一の番号を付す。第3図に
於いて、半導体素子9を搭載する基板1は矢印の
方向に送られて行く。本加熱部6(予備加熱部不
要)上に基板1が到達すると、ノズル20から
Pb(92.5%)−Sn(5%)−Ag(2.5%)の材質
で、径の大きさが300μφのワイヤ化されたソル
ダー21が例えば0.5mmと定められた量だけ斜め
上方向から送り出され、瞬間的にリードフレーム
等の基板1に溶着され、速やかに真空チヤツク1
0で半導体素子9を溶着したソルダー7の上に
0.9秒程度置き、次の工程に送られて、冷却され
固定される。このとき、溶着温度は350゜±10℃
程度である。
FIG. 3 is a sectional view and a partially enlarged view of an assembly device for explaining one embodiment of the present invention, and is a sectional view and a partially enlarged view of the assembly device.
The same parts as in the figure are given the same numbers. In FIG. 3, the substrate 1 on which the semiconductor element 9 is mounted is fed in the direction of the arrow. When the substrate 1 reaches the main heating section 6 (preheating section unnecessary), the nozzle 20
A wire solder 21 made of Pb (92.5%)-Sn (5%)-Ag (2.5%) and having a diameter of 300μφ is fed diagonally from above by an amount determined to be, for example, 0.5mm. , it is instantaneously welded to the substrate 1 such as a lead frame, and is immediately attached to the vacuum chuck 1.
On top of the solder 7 with the semiconductor element 9 welded at 0.
After about 0.9 seconds, it is sent to the next process where it is cooled and fixed. At this time, the welding temperature is 350° ± 10°C
That's about it.

このように本発明一実施例の半導体装置の組立
方法によれば、常に均一なソルダー量を容易に供
給することができるため電気的特性及び信頼度に
優れている。また設備の構造が、ひとつの加熱部
6上でソルダーの溶解及び半導体素子9を溶着す
るので非常にシンプルになり、そのため製作費が
安価である。また、ソルダー21が溶解した後、
直ちに半導体素子9を溶着でき、そのため酸化被
膜ができる心配もない酸化被膜を除去する必要も
ないので、組み立て工程も短縮できる。
As described above, according to the method for assembling a semiconductor device according to one embodiment of the present invention, it is possible to easily supply a uniform amount of solder at all times, resulting in excellent electrical characteristics and reliability. Moreover, the structure of the equipment is very simple because the solder is melted and the semiconductor element 9 is welded on one heating section 6, and therefore the manufacturing cost is low. Moreover, after the solder 21 is melted,
The semiconductor element 9 can be welded immediately, and there is no need to worry about forming an oxide film, and there is no need to remove the oxide film, so the assembly process can also be shortened.

本発明の一実施例で用いたソルダーの材質や溶
着時間は、これに限定される必要はなく、半導体
素子9や基板1に応じて最適なものを選ぶことが
できる。また半導体素子と基板とを溶着するもの
としてソルダーに限られるわけではなく、他のロ
ウ材をも適用し得ることは無論である。ワイヤー
化されたソルダーを送り出す位置は斜め上方から
と限られるものでもなく、例えば横方向からでも
よい。
The material of the solder and the welding time used in the embodiment of the present invention do not need to be limited to these, and can be optimally selected depending on the semiconductor element 9 and the substrate 1. Further, the material for welding the semiconductor element and the substrate is not limited to solder, and it goes without saying that other brazing materials may be used. The position from which the wired solder is delivered is not limited to diagonally above, but may be from the side, for example.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a〜d、第2図a〜dは従来の半導体装
置の組立装置の断面図及び部分拡大図、第3図a
〜cは本発明の一実施例を説明するための半導体
装置の組立装置の断面図及びその部分拡大図であ
る。 1……基板、2……テープ状ソルダー、3……
ポンチ、4……予備加熱部、5……ガスカバー、
6……本加熱部、7……溶着ソルダー、8……酸
化膜除去具、9……半導体素子、10……真空チ
ヤツク、11……カバーガス、12……酸化被
膜、13……ソルダー、20……ノズル、21…
…ワイヤー化ソルダー、30……支持台。
Figures 1 a to d and Figures 2 a to d are cross-sectional views and partially enlarged views of conventional semiconductor device assembly equipment, and Figure 3 a.
-c are a sectional view and a partially enlarged view of a semiconductor device assembly apparatus for explaining an embodiment of the present invention. 1... Board, 2... Tape-shaped solder, 3...
Punch, 4... Preheating section, 5... Gas cover,
6... Main heating section, 7... Welding solder, 8... Oxide film removal tool, 9... Semiconductor element, 10... Vacuum chuck, 11... Cover gas, 12... Oxide film, 13... Solder, 20...nozzle, 21...
...Wire solder, 30...Support stand.

Claims (1)

【特許請求の範囲】[Claims] 1 支持台上を水平方向に送られてくる搭載基板
の所定部にロウ剤を用いて半導体素子を固着する
半導体装置の組立方法において、前記支持台の一
部に設けられた加熱部上に前記搭載基板の前記所
定部が送られてきた際に前記加熱部により加熱さ
れた前記搭載基板の前記所定部上にワイヤ化した
ロウ剤を一定量送り出して前記所定部の表面に所
定量のロウ剤を溶着せしめ、しかる後、前記搭載
基板の前記所定部が前記加熱部上にあるうちにか
つ前記溶着したロウ剤の表面に酸化被膜ができる
時間的余裕を与えずに半導体素子を前記溶着した
ロウ剤上に降下させて接着させることを特徴とす
る半導体装置の組立方法。
1. In a method for assembling a semiconductor device in which a semiconductor element is fixed to a predetermined part of a mounting board that is fed horizontally on a support base using a brazing agent, the heating part provided on a part of the support base is When the predetermined portion of the mounting board is sent, a predetermined amount of brazing agent formed into a wire is delivered onto the predetermined portion of the mounting substrate heated by the heating unit, and a predetermined amount of brazing agent is applied to the surface of the predetermined portion. Thereafter, while the predetermined portion of the mounting substrate is on the heating section, and without allowing time for an oxide film to form on the surface of the welded brazing agent, the semiconductor element is attached to the welded soldering agent. 1. A method for assembling a semiconductor device, which comprises adhering the device by lowering the adhesive onto the adhesive.
JP194579A 1979-01-09 1979-01-09 Assembling method of semicondcutor device Granted JPS5593231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP194579A JPS5593231A (en) 1979-01-09 1979-01-09 Assembling method of semicondcutor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP194579A JPS5593231A (en) 1979-01-09 1979-01-09 Assembling method of semicondcutor device

Publications (2)

Publication Number Publication Date
JPS5593231A JPS5593231A (en) 1980-07-15
JPS6222447B2 true JPS6222447B2 (en) 1987-05-18

Family

ID=11515743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP194579A Granted JPS5593231A (en) 1979-01-09 1979-01-09 Assembling method of semicondcutor device

Country Status (1)

Country Link
JP (1) JPS5593231A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS424919Y1 (en) * 1964-11-19 1967-03-14
JPS5110769A (en) * 1974-07-16 1976-01-28 New Nippon Electric Co Handotaisochino seizohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS424919Y1 (en) * 1964-11-19 1967-03-14
JPS5110769A (en) * 1974-07-16 1976-01-28 New Nippon Electric Co Handotaisochino seizohoho

Also Published As

Publication number Publication date
JPS5593231A (en) 1980-07-15

Similar Documents

Publication Publication Date Title
US4934582A (en) Method and apparatus for removing solder mounted electronic components
JP2569804B2 (en) Film pasting device
JPS6222447B2 (en)
JPH11163199A (en) Mounting method
JPH067990A (en) Solder material and joining method
JP3344289B2 (en) Mounting method of work with bump
JPH088284A (en) Wire bonding structure and its reinforcement method
JP2809207B2 (en) Semiconductor device repair method and repair device
JP3063390B2 (en) Soldering equipment for terminals
JP2738070B2 (en) Die bonding method
JP3586363B2 (en) Manufacturing method of electronic components
JP2556918B2 (en) IC component mounting method and apparatus
JP3269399B2 (en) Mounting method of work with bump
JP3372313B2 (en) Wire bonding equipment
JP2009212431A (en) Reflow device and method of manufacturing semiconductor device
KR100384337B1 (en) Conductive ball attaching method of circuit board for semiconductor package
JPS6347142B2 (en)
JP4253093B2 (en) Solder ball mounting method and apparatus
JPH04219942A (en) Connecting method for lead of ic component
JPH07193100A (en) Method and apparatus for bonding
JPH0856071A (en) Solder bump forming method
JP2669321B2 (en) TCP tower mounted device
JPH05152368A (en) Coated wire bonding device
RU1781732C (en) Method of attachment of semiconductor crystal to body
JPH028460B2 (en)