JPS62221186A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS62221186A JPS62221186A JP6511586A JP6511586A JPS62221186A JP S62221186 A JPS62221186 A JP S62221186A JP 6511586 A JP6511586 A JP 6511586A JP 6511586 A JP6511586 A JP 6511586A JP S62221186 A JPS62221186 A JP S62221186A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- wavelength
- light
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000005253 cladding Methods 0.000 claims description 13
- 230000010355 oscillation Effects 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 79
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
この発明は、２つの波長帯で発光することができる半導
体レーザに関する。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to a semiconductor laser capable of emitting light in two wavelength bands.
「従来の技術」
半導体レーザの多くは、１つの波長帯で発光するが、２
つの波長帯で選択的に発光することができると、極めて
有利な場合が多い。"Prior art" Most semiconductor lasers emit light in one wavelength band, but
The ability to selectively emit light in one wavelength band is often extremely advantageous.
そこで、従来は２つの素子をハイブリッド構成して選択
的に発光させたり、あるいは、第２図に示す断面図の如
く素子内に特殊な段差構造を作製し、各段差面にバンド
ギャップが異なる活性層２５を２個設ける構造として、
２つの波長帯で発光さ仔るようにしたものが開発されて
いる。なお、第２図中符号２０，２１．２９は電極、２
２は５ｉＯ３膜、２３．２７はクラッド層、２４はガイ
ド層、２８は基板である。Therefore, in the past, two devices were configured as a hybrid to emit light selectively, or a special step structure was created within the device as shown in the cross-sectional view shown in Figure 2, and each step surface had a different band gap. As a structure in which two layers 25 are provided,
A device that emits light in two wavelength bands has been developed. In addition, the symbols 20, 21, and 29 in FIG. 2 are electrodes, 2
2 is a 5iO3 film, 23.27 is a cladding layer, 24 is a guide layer, and 28 is a substrate.
［発明か解決しようとする問題点」
しかしながら、上述した従来の半導体レーザにおいては
、各波長帯によって光の出射位置が異なったり、あるい
は、素子内の構造が極めて複雑になって製造過程が繁雑
になったりする欠点があった。[Problem to be solved by the invention] However, in the conventional semiconductor laser described above, the light emission position differs depending on the wavelength band, or the structure inside the device becomes extremely complicated, making the manufacturing process complicated. There were some drawbacks.
この発明は上述した問題点に鑑みてなされたもので、単
一素子で２つの波長帯による発光を行うことができると
とらに、出力光の出射位置を各波長帯とら等しくするこ
とができ、しかも、その構造を極めて簡単とすることが
できる半導体レーザを提供することを目的としている。This invention was made in view of the above-mentioned problems, and it is possible to emit light in two wavelength bands with a single element, and also to make the output position of the output light the same for each wavelength band. Moreover, it is an object of the present invention to provide a semiconductor laser whose structure can be made extremely simple.
「問題点を解決するための手段」
この発明は、上記問題点を解決するために、基板または
バッファ層上の一側に設けられる第１活性層と、前記基
板またはバッファ層上の他側および前記第１活性層の上
面に設けられ、航記第１活性層よりバンドギャップ波長
が短い第２活性層と、この第２活性層の上面に設けられ
、第１、第２活性層のバンドギャップ波長より短いバン
ドギャップ波長の導波路層と、この導波路層の上面に設
けられるクラッド層と、前記基板および前記クラッド層
を介して首記第１および第２活性層に選択的に電流注入
を行う電極とを具備している。"Means for Solving the Problems" In order to solve the above problems, the present invention provides a first active layer provided on one side of the substrate or buffer layer, and a first active layer provided on the other side of the substrate or buffer layer. a second active layer provided on the upper surface of the first active layer and having a shorter bandgap wavelength than that of the first active layer; and a second active layer provided on the upper surface of the second active layer and having a bandgap wavelength shorter than that of the first active layer; A waveguide layer having a bandgap wavelength shorter than the wavelength, a cladding layer provided on the upper surface of this waveguide layer, and selectively injecting current into the first and second active layers through the substrate and the cladding layer. It is equipped with electrodes to perform the test.
「作用」
前記第１、第２の活性層が各々の組成波長によって発光
するとと乙に、前記導波路層が各波長の光に対して共通
の共振器として使用されるので、出力光の出射位置が各
波長とも等しくなる。"Function" When the first and second active layers emit light according to their respective composition wavelengths, the waveguide layer is used as a common resonator for light of each wavelength, so that output light can be emitted. The position is the same for each wavelength.
「実施例」
以下、図面を参照してこの発明の実施例について説明す
る。"Embodiments" Hereinafter, embodiments of the present invention will be described with reference to the drawings.
図は、この発明の一実施例の構成を示す断面図である。The figure is a sectional view showing the configuration of an embodiment of the present invention.
図においてｌは、ｐ−１ｎＰによって構成されている基
板であり、下面に全面電極２が、上面にｐ−ＩｎＰによ
って構成されているバッファ層ＢＦ’が設けられている
。次に、３はバンドギャップ波長λｇ＝ １．５μｍの
アンドープのＩｎＧａＡｓＰからなっている第１活性層
であり、バッファ層ＢＰの上面の右側に積層されている
。４はλｇ＝１．３μｍのアンドープのＩｎＧａＡｓＰ
からなっている第２活性層であり、バッファＢＰの上面
の右側および第１活性層の上面に積層されている。５は
λｇ＝１．１〜１．２μｍのｎ−ＩｎＧａＡｓＰからな
っている導波路層であり、第２活性層４の上面に積層さ
れている。In the figure, l is a substrate made of p-1nP, and a full-surface electrode 2 is provided on the lower surface, and a buffer layer BF' made of p-InP is provided on the upper surface. Next, 3 is a first active layer made of undoped InGaAsP with a bandgap wavelength λg=1.5 μm, and is laminated on the right side of the upper surface of the buffer layer BP. 4 is undoped InGaAsP with λg=1.3μm
The second active layer is formed of a second active layer, and is laminated on the right side of the upper surface of the buffer BP and on the upper surface of the first active layer. 5 is a waveguide layer made of n-InGaAsP with λg=1.1 to 1.2 μm, and is laminated on the upper surface of the second active layer 4.
６はｎ−ＩｎＰによって構成されているクラッド層であ
り、導波路層５の上にその上端面が水平方向に平坦とな
るように積層されている。７，８は、各々クラッド層６
の上面に設けられている電極であり、電極７は第２活性
層４の左側の上方に対応する部分に位置し、電極８は第
１活性層３の上方に対応する部分に位置している。A cladding layer 6 is made of n-InP, and is laminated on the waveguide layer 5 so that its upper end surface is flat in the horizontal direction. 7 and 8 are respectively cladding layers 6
These are electrodes provided on the upper surface, and the electrode 7 is located at a portion corresponding to the upper left side of the second active layer 4, and the electrode 8 is located at a portion corresponding to the upper side of the first active layer 3. .
上記半導体レーザを製造する場合は、まず、基板！上に
バッファ層ＢＦと第１活性層３を順次成長させる。そし
て、フォトリソグラフィ、選択エツチングにより第１活
性層３の左側を除去し、その後において、第２活性層４
を第１活性層３に被せるようにして成長させる。次いで
、第２活性層４の上面に導波路層５を成長させ、導波路
層５の上面にクラッド層６を成長させ、さらに、電極２
゜゛ ７，８を取り付けると一連の製造工程が終了す
る。When manufacturing the semiconductor laser mentioned above, first, the substrate! A buffer layer BF and a first active layer 3 are sequentially grown thereon. Then, the left side of the first active layer 3 is removed by photolithography and selective etching, and then the second active layer 4 is removed.
is grown so as to cover the first active layer 3. Next, the waveguide layer 5 is grown on the upper surface of the second active layer 4, the cladding layer 6 is grown on the upper surface of the waveguide layer 5, and the electrode 2 is grown on the upper surface of the second active layer 4.
゜゛ Once 7 and 8 are attached, the series of manufacturing steps is completed.
上記構成において、電極２と電極８との間に通電を行う
と、注入電流のほとんどが第１活性層３を流れるため、
この第１活性層３から波長１．５μｍの光が発生ずる。In the above configuration, when electricity is applied between the electrode 2 and the electrode 8, most of the injected current flows through the first active layer 3;
Light with a wavelength of 1.5 μm is generated from this first active layer 3.
この場合、周知のように、ある組成波長で発生した光は
、同一組成波長の非励起状態の媒質があると、この媒質
に吸収されるという性質があり、また、組成波長よりバ
ンドギャップエネルギＥｇの大きい低損失な媒質が近傍
にあると、その媒質の方へ光が導波される性質がある。In this case, as is well known, light generated at a certain compositional wavelength has the property that if there is a medium in an unexcited state with the same compositional wavelength, it will be absorbed by this medium, and the bandgap energy Eg When a low-loss medium with a large value is nearby, light tends to be guided toward that medium.
したがって、上述のようにして発生された波長１゜５μ
ｍの光は、第２活性層（１，３μｍ）と、導波路層５（
ｌ、１〜１．２μｌ１１）に導波され、これらの層の両
端面において、ファブリペローモードで共振し、この結
果、１．５μｍのレーザ発振が行なわれる。Therefore, the wavelength 1°5μ generated as described above
m light passes through the second active layer (1.3 μm) and the waveguide layer 5 (
1 to 1.2 .mu.l11), and resonates in Fabry-Perot mode at both end surfaces of these layers, resulting in 1.5 .mu.m laser oscillation.
一方、電極２と電極７との間に通電を行う、と、注入電
流の殆どが第２活性層４の左側を流れるため、上述した
場合と同様にして、第２活性層から１．３μｍの光が発
生する。そして、この発生光は第２活性層４の右側と第
１活性層５に若干吸収されるが、そのほとんどは導波路
層５に導波されてファブリペローモードで共振し、波長
１．３μｍのレーザ発振を行う。そして、上述したこと
から判るように、波長１．５μｍで発振を行う場合も、
１．３μｍで発振を行う場合も、共に導波路層５を共通
の共振器として使用するので、レーザ出力光の出射位置
が各波長とも等しくなる。On the other hand, when current is applied between the electrode 2 and the electrode 7, most of the injected current flows on the left side of the second active layer 4. Light is generated. This generated light is slightly absorbed by the right side of the second active layer 4 and the first active layer 5, but most of it is guided by the waveguide layer 5 and resonates in the Fabry-Perot mode, with a wavelength of 1.3 μm. Performs laser oscillation. As can be seen from the above, even when oscillating at a wavelength of 1.5 μm,
Even when oscillating at 1.3 μm, since the waveguide layer 5 is used as a common resonator, the emission position of the laser output light is the same for each wavelength.
なお、上記実施例において、第１活性層３と第２活性層
との間に、ｒｎＰ保護層を設けるようにしてもよい。In the above embodiment, an rnP protective layer may be provided between the first active layer 3 and the second active layer.
また、バッファ層ＢＰを省略して基板ｌを１層によって
構成してもよい。さらに、ｐ−ｎを逆転した構造にも応
用することができる。Further, the buffer layer BP may be omitted and the substrate l may be composed of one layer. Furthermore, it can also be applied to a structure in which pn is reversed.
また、本発明は、あくまで２波長レーザの導波路構造に
ついての発明であるため、上記実施例においては、横モ
ード制御及び低電流駆動のための工程、構造を省略して
いるが、全ての構造（例えば、ＢＨ，ＰＢＨ，ＶＳＢ、
ＢＣ，Ｃ５Ｐ）に適用できる。Furthermore, since the present invention is concerned with the waveguide structure of a two-wavelength laser, the steps and structures for transverse mode control and low current drive are omitted in the above embodiments, but all structures are (For example, BH, PBH, VSB,
BC, C5P).
「発明の効果」
以上説明したように、この発明によれば、基板またはバ
ッファ層上の一側に設けられる第１活性層と、首記基板
またはバッファ層上の他側および前記第１活性層の上面
に設けられ、前記第１活性層よりバンドギャップ波長が
短い第２活性層と、この第２活性層の上面に設けられ、
第１１第２活性層のバンドギャップ波長より短いバンド
ギャップ波長の導波路層と、この導波路層の上面に設け
られるクラッド層と、前記基板および前記クラッド層を
介して前記第１および第２活性層に選択的に電流注入を
行う電極とを具備したので、単一素子で２つの波長帯に
よる発光を行うことができるとともに、出力光の出射位
置を各波長帯とも等しくすることができる利点が得られ
、さらに、素子構造を簡単化し得て製造を容易とするこ
とができる。"Effects of the Invention" As explained above, according to the present invention, the first active layer is provided on one side of the substrate or the buffer layer, and the first active layer is provided on the other side of the substrate or the buffer layer. a second active layer provided on the top surface and having a shorter bandgap wavelength than the first active layer; a second active layer provided on the top surface of the second active layer;
11. A waveguide layer having a bandgap wavelength shorter than the bandgap wavelength of the second active layer, a cladding layer provided on the upper surface of the waveguide layer, and a cladding layer provided on the upper surface of the waveguide layer, and a cladding layer disposed on the first and second active layers via the substrate and the cladding layer. Since it is equipped with an electrode that selectively injects current into the layer, it has the advantage that it is possible to emit light in two wavelength bands with a single element, and that the output position of the output light can be made the same for each wavelength band. Furthermore, the device structure can be simplified and manufacturing can be facilitated.
第１図はこの発明の一実施例の構成を示す断面図、第２
図は従来の２波長発光レーザの構成例を示す断面図であ
る。
ｌ・・・・・・基板、２・・・・・・全面電極、３・・
・・・・第１活性層、４・・・・・・第２活性眉、５・
・・・・導波路層、６・・・・・クラッド層、７．８・
・・・・・電極、ＢＦ・・・・・・バッファ層。FIG. 1 is a sectional view showing the configuration of an embodiment of the present invention, and FIG.
The figure is a cross-sectional view showing an example of the configuration of a conventional two-wavelength emitting laser. l...Substrate, 2...Full surface electrode, 3...
...First active layer, 4...Second active eyebrow, 5.
... Waveguide layer, 6 ... Cladding layer, 7.8.
...Electrode, BF...Buffer layer.
Claims (1)
と、前記基板またはバッファ層上の他側および前記第１
活性層の上面に設けられ、前記第１活性層よりバンドギ
ャップ波長が短い第２活性層と、この第２活性層の上面
に設けられ、第１、第２活性層のバンドギャップ波長よ
り短いバンドギャップ波長の導波路層と、この導波路層
の上面に設けられるクラッド層と、前記基板および前記
クラッド層を介して前記第１および第２活性層に選択的
に電流注入を行う電極とを具備することを特徴とする半
導体レーザ。a first active layer provided on one side on the substrate or buffer layer; a first active layer provided on the other side on the substrate or buffer layer;
a second active layer provided on the top surface of the active layer and having a shorter bandgap wavelength than the first active layer; and a second active layer provided on the top surface of the second active layer and having a bandgap wavelength shorter than the bandgap wavelength of the first and second active layers. A waveguide layer having a gap wavelength, a cladding layer provided on an upper surface of the waveguide layer, and an electrode for selectively injecting current into the first and second active layers via the substrate and the cladding layer. A semiconductor laser characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6511586A JPS62221186A (en) | 1986-03-24 | 1986-03-24 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6511586A JPS62221186A (en) | 1986-03-24 | 1986-03-24 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62221186A true JPS62221186A (en) | 1987-09-29 |
| JPH0546995B2 JPH0546995B2 (en) | 1993-07-15 |
Family
ID=13277566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6511586A Granted JPS62221186A (en) | 1986-03-24 | 1986-03-24 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62221186A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111969415A (en) * | 2020-10-20 | 2020-11-20 | 武汉敏芯半导体股份有限公司 | Wide-spectrum multi-wavelength Fabry-Perot laser |
-
1986
- 1986-03-24 JP JP6511586A patent/JPS62221186A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111969415A (en) * | 2020-10-20 | 2020-11-20 | 武汉敏芯半导体股份有限公司 | Wide-spectrum multi-wavelength Fabry-Perot laser |
| CN111969415B (en) * | 2020-10-20 | 2021-01-26 | 武汉敏芯半导体股份有限公司 | Wide-spectrum multi-wavelength Fabry-Perot laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0546995B2 (en) | 1993-07-15 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |