JPS6220839U - - Google Patents
Info
- Publication number
- JPS6220839U JPS6220839U JP11152385U JP11152385U JPS6220839U JP S6220839 U JPS6220839 U JP S6220839U JP 11152385 U JP11152385 U JP 11152385U JP 11152385 U JP11152385 U JP 11152385U JP S6220839 U JPS6220839 U JP S6220839U
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- silicon layer
- forming
- thermal head
- ohmic contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Electronic Switches (AREA)
Description
第１図Ａ及びＢはこの考案の二次元サーマルヘ
ツドの実施例を概略的に示す要部平面図及び断面
図、第２図は従来の二次元サーマルヘツドの等価
回路図、第３図は従来の二次元サーマルヘツドの
構造の一例を示す断面図である。
１１……基板、１３……第一給電体、１５……
第二給電体、１７……シリコン層、１９……ドツ
ト。
1A and 1B are a plan view and a sectional view of essential parts schematically showing an embodiment of the two-dimensional thermal head of this invention, FIG. 2 is an equivalent circuit diagram of a conventional two-dimensional thermal head, and FIG. 3 is a conventional one. FIG. 2 is a sectional view showing an example of the structure of a two-dimensional thermal head. 11... Board, 13... First power feeder, 15...
Second power supply body, 17... silicon layer, 19... dot.
Claims (1)
多数の第一及び第二給電体と、これら第一及び第
二給電体間に設けられたシリコン層とを具える二
次元サーマルヘツドにおいて、 前記シリコン層を、これら第一及び第二給電体
間の各交差点に共通に形成され、該第一給電体と
はオーミツクコンタクトを形成し、該第二給電体
とはシヨツトキダイオードを形成し、かつ、各交
差点において発熱抵抗体として作用するシリコン
層とした ことを特徴とする二次元サーマルヘツド。[Claims for Utility Model Registration] Comprising a large number of first and second power supply bodies arranged in a two-dimensional matrix on a substrate, and a silicon layer provided between the first and second power supply bodies. In the two-dimensional thermal head, the silicon layer is commonly formed at each intersection between the first and second power supply bodies, forming an ohmic contact with the first power supply body, and forming an ohmic contact with the second power supply body. A two-dimensional thermal head comprising a silicon layer forming a Schottky diode and acting as a heating resistor at each intersection point.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11152385U JPS6220839U (en) | 1985-07-20 | 1985-07-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11152385U JPS6220839U (en) | 1985-07-20 | 1985-07-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6220839U true JPS6220839U (en) | 1987-02-07 |
Family
ID=30991519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11152385U Pending JPS6220839U (en) | 1985-07-20 | 1985-07-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6220839U (en) |
-
1985
- 1985-07-20 JP JP11152385U patent/JPS6220839U/ja active Pending