JPS63134559U - - Google Patents

Info

Publication number
JPS63134559U
JPS63134559U JP2625087U JP2625087U JPS63134559U JP S63134559 U JPS63134559 U JP S63134559U JP 2625087 U JP2625087 U JP 2625087U JP 2625087 U JP2625087 U JP 2625087U JP S63134559 U JPS63134559 U JP S63134559U
Authority
JP
Japan
Prior art keywords
emitting diode
resistor
conductive layers
light emitting
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2625087U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2625087U priority Critical patent/JPS63134559U/ja
Publication of JPS63134559U publication Critical patent/JPS63134559U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は抵抗内蔵型の発光ダイオードの実施例
を示す構造図、第2図は抵抗内蔵型の発光ダイオ
ードの実施例の平面図、第3図は発光ダイオード
の記号図である。 10……発光ダイオード、12……n型基板結
晶、16……n型結晶層、18……p型結晶層、
20……抵抗層。
FIG. 1 is a structural diagram showing an embodiment of a light emitting diode with a built-in resistor, FIG. 2 is a plan view of an embodiment of a light emitting diode with a built-in resistor, and FIG. 3 is a symbolic diagram of the light emitting diode. 10... Light emitting diode, 12... N type substrate crystal, 16... N type crystal layer, 18... P type crystal layer,
20...Resistance layer.

Claims (1)

【実用新案登録請求の範囲】 (1) 異なる導電層を有する発光ダイオードにお
いて、前記導電層のいずれかに抵抗体を設けたこ
とを特徴とする発光ダイオード。 (2) 抵抗体は、P型層の表面に設けたことを特
徴とする実用新案登録請求の範囲第1項に記載の
発光ダイオード。
[Claims for Utility Model Registration] (1) A light emitting diode having different conductive layers, characterized in that a resistor is provided in one of the conductive layers. (2) The light-emitting diode according to claim 1, wherein the resistor is provided on the surface of the P-type layer.
JP2625087U 1987-02-24 1987-02-24 Pending JPS63134559U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2625087U JPS63134559U (en) 1987-02-24 1987-02-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2625087U JPS63134559U (en) 1987-02-24 1987-02-24

Publications (1)

Publication Number Publication Date
JPS63134559U true JPS63134559U (en) 1988-09-02

Family

ID=30827157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2625087U Pending JPS63134559U (en) 1987-02-24 1987-02-24

Country Status (1)

Country Link
JP (1) JPS63134559U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011249411A (en) * 2010-05-24 2011-12-08 Seiwa Electric Mfg Co Ltd Semiconductor light-emitting element, light-emitting device, illumination device, display device, signal light unit and road information device
JP2012049385A (en) * 2010-08-27 2012-03-08 Seiwa Electric Mfg Co Ltd Semiconductor light-emitting element, light-emitting device, luminaire, display device and method of manufacturing semiconductor light-emitting element
JP2012109493A (en) * 2010-11-19 2012-06-07 Seiwa Electric Mfg Co Ltd Semiconductor light-emitting element measuring instrument

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011249411A (en) * 2010-05-24 2011-12-08 Seiwa Electric Mfg Co Ltd Semiconductor light-emitting element, light-emitting device, illumination device, display device, signal light unit and road information device
JP2012049385A (en) * 2010-08-27 2012-03-08 Seiwa Electric Mfg Co Ltd Semiconductor light-emitting element, light-emitting device, luminaire, display device and method of manufacturing semiconductor light-emitting element
JP2012109493A (en) * 2010-11-19 2012-06-07 Seiwa Electric Mfg Co Ltd Semiconductor light-emitting element measuring instrument

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