JPS62206881A - 不揮発性半導体記憶装置及びその駆動方法 - Google Patents

不揮発性半導体記憶装置及びその駆動方法

Info

Publication number
JPS62206881A
JPS62206881A JP61049602A JP4960286A JPS62206881A JP S62206881 A JPS62206881 A JP S62206881A JP 61049602 A JP61049602 A JP 61049602A JP 4960286 A JP4960286 A JP 4960286A JP S62206881 A JPS62206881 A JP S62206881A
Authority
JP
Japan
Prior art keywords
transistors
memory
transistor
line
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61049602A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0581070B2 (enExample
Inventor
Masashi Koyama
小山　昌司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61049602A priority Critical patent/JPS62206881A/ja
Publication of JPS62206881A publication Critical patent/JPS62206881A/ja
Publication of JPH0581070B2 publication Critical patent/JPH0581070B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP61049602A 1986-03-07 1986-03-07 不揮発性半導体記憶装置及びその駆動方法 Granted JPS62206881A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61049602A JPS62206881A (ja) 1986-03-07 1986-03-07 不揮発性半導体記憶装置及びその駆動方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61049602A JPS62206881A (ja) 1986-03-07 1986-03-07 不揮発性半導体記憶装置及びその駆動方法

Publications (2)

Publication Number Publication Date
JPS62206881A true JPS62206881A (ja) 1987-09-11
JPH0581070B2 JPH0581070B2 (enExample) 1993-11-11

Family

ID=12835782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61049602A Granted JPS62206881A (ja) 1986-03-07 1986-03-07 不揮発性半導体記憶装置及びその駆動方法

Country Status (1)

Country Link
JP (1) JPS62206881A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5274587A (en) * 1990-07-11 1993-12-28 Nec Corporation Non-volatile programmable read only memory device having memory cells each implemented by a memory transistor and a switching transistor coupled in parallel and method of memorizing a data bit
US5291440A (en) * 1990-07-30 1994-03-01 Nec Corporation Non-volatile programmable read only memory device having a plurality of memory cells each implemented by a memory transistor and a switching transistor stacked thereon

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07276543A (ja) * 1994-04-05 1995-10-24 Tanaka Shikan Kk 形紙管

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254663A (ja) * 1984-05-30 1985-12-16 Toshiba Corp 半導体記憶装置およびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254663A (ja) * 1984-05-30 1985-12-16 Toshiba Corp 半導体記憶装置およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5274587A (en) * 1990-07-11 1993-12-28 Nec Corporation Non-volatile programmable read only memory device having memory cells each implemented by a memory transistor and a switching transistor coupled in parallel and method of memorizing a data bit
US5291440A (en) * 1990-07-30 1994-03-01 Nec Corporation Non-volatile programmable read only memory device having a plurality of memory cells each implemented by a memory transistor and a switching transistor stacked thereon

Also Published As

Publication number Publication date
JPH0581070B2 (enExample) 1993-11-11

Similar Documents

Publication Publication Date Title
KR100305442B1 (ko) 불휘발성기억장치와그제조방법
US5557569A (en) Low voltage flash EEPROM C-cell using fowler-nordheim tunneling
US5483484A (en) Electrically erasable programmable read-only memory with an array of one-transistor memory cells
JP3104319B2 (ja) 不揮発性記憶装置
JP3328463B2 (ja) 並列型不揮発性半導体記憶装置及び同装置の使用方法
US5553016A (en) Semiconductor memory device
US6031771A (en) Memory redundancy circuit using single polysilicon floating gate transistors as redundancy elements
JPH04278297A (ja) 不揮発性半導体記憶装置
US6744106B2 (en) Non-volatile semiconductor memory device
JP3231437B2 (ja) 不揮発性半導体記憶装置
US6233176B1 (en) Programmable semiconductor memory array having series-connected memory cells
KR100295794B1 (ko) 대용량및고속소거에적합한반도체메모리장치
US6654282B2 (en) Nonvolatile semiconductor memory device
US5355332A (en) Electrically erasable programmable read-only memory with an array of one-transistor memory cells
US6922357B2 (en) Non-volatile semiconductor memory device
JPS58191463A (ja) 集積回路高電圧分配方法及び装置
US4912534A (en) Nonvolatile semiconductor memory device
JPS61267997A (ja) 半導体回路
CN100594557C (zh) 集成存储电路装置
JPS62206881A (ja) 不揮発性半導体記憶装置及びその駆動方法
JPS63268194A (ja) 不揮発性半導体メモリ
US5852577A (en) Electrically erasable and programmable read-only memory having a small unit for program and erase
EP0647947A2 (en) Low voltage flash EEPROM X-cell using Fowler-Nordheim tunneling
JPS62219296A (ja) 半導体集積回路装置
US6639818B1 (en) Differential non-volatile content addressable memory cell and array