JPS62204171A - Monitored aging method for integrated circuit - Google Patents
Monitored aging method for integrated circuitInfo
- Publication number
- JPS62204171A JPS62204171A JP61046143A JP4614386A JPS62204171A JP S62204171 A JPS62204171 A JP S62204171A JP 61046143 A JP61046143 A JP 61046143A JP 4614386 A JP4614386 A JP 4614386A JP S62204171 A JPS62204171 A JP S62204171A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- signal
- time
- integrated circuit
- defective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000032683 aging Effects 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims description 5
- 230000002950 deficient Effects 0.000 abstract description 12
- 238000012360 testing method Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は集積回路のモニタードエージング方法に係り、
特にエージング中にスタンバイ状態にすることにより不
良検出可能な集積回路のスクリーニングに好適なモニタ
ードエージング方法に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a method for monitored aging of integrated circuits.
In particular, the present invention relates to a monitored aging method suitable for screening integrated circuits whose defects can be detected by placing them in a standby state during aging.
従来のモニタードエージング装置では集積回路素子をエ
ージング課程は連続的に動作状態におくようになってい
たので、第1図に示したような不良現象すなわち集積回
路に電源は倶給するものの動作を止めるスタンバイ状態
にすることによって不良現象を発生する集積回路の排除
ができない欠点があった。In conventional monitored aging equipment, integrated circuit devices are kept in an operating state continuously during the aging process, so the defective phenomenon shown in Figure 1 occurs even though power is supplied to the integrated circuit. There is a drawback in that it is not possible to eliminate integrated circuits that cause defective phenomena by turning them off to a standby state.
なおこの種の試験装置として、特公昭58−56456
号が公知であるが、試験時間等については配慮されてい
なかった。Furthermore, as this type of testing device, the
Although the number is publicly known, no consideration was given to the test time, etc.
本発明の目的は上記した不良現象を示す集積回路を排除
可能なモニタードエージング方法を提供することにある
。An object of the present invention is to provide a monitored aging method capable of eliminating integrated circuits exhibiting the above-mentioned defective phenomena.
本発明で対象とする不良現象は第1図に示したように集
積回路をスタンバイ状態にお(ことKよって発生する。The defective phenomenon targeted by the present invention occurs when the integrated circuit is placed in a standby state, as shown in FIG.
ことに着目し、モニタードエージング課程に集積回路を
スタンバイ状態に一定時間おくことにより不良素子を排
除するものである。Focusing on this, defective elements are eliminated by leaving the integrated circuit in a standby state for a certain period of time during the monitored aging process.
以下、本発明の一実施例を第2図により説明する。被試
験集積回路(以’FDUTと記す)3に供給する信号を
発生するための信号発生部2、DUT3の出力信号を敗
り込み良/不良の判定を行なうための判定部4、それに
時間設定のためのタイマ5が本発見を実現するだめの構
成要素である。タイマ5からは第1図において時刻to
〜t1およびt2〜t3の間は論理1111を発生し、
時刻t1〜t2の時間は論理′0″′を発生する。この
ようにすることによりt o −t +およびt2〜t
3の時間はDUT3からANDゲートAを通してDUT
3に正規のタロツク等の信号が加えられ、またDUT5
からの出力信号はANDゲートBを通して判定部4へ送
られ処理されることから通常のモニタードエージングが
行なわれることになる。一方、t1〜t2の時間はタイ
マ5の出力の論理レベルが10′になることからAND
ゲートAおよびBが閉じられるためDUT3にはクロッ
ク等の信号が供給されなくなることから、DU T 3
カスタンバイ状態になる。An embodiment of the present invention will be described below with reference to FIG. A signal generating section 2 for generating a signal to be supplied to an integrated circuit under test (hereinafter referred to as FDUT) 3, a determining section 4 for determining whether the output signal of the DUT 3 is good or bad, and time setting. The timer 5 for this is the essential component for realizing this discovery. From timer 5, time to
Logic 1111 is generated between ~t1 and t2~t3,
The period from time t1 to t2 generates logic '0''. By doing this, t o -t + and t2 to t
Time 3 is from DUT3 to DUT through AND gate A.
A signal such as a regular tarokku is added to DUT5.
The output signal is sent to the determining section 4 through AND gate B and processed, so that normal monitored aging is performed. On the other hand, since the logic level of the output of timer 5 is 10' during the period from t1 to t2, the AND
Since gates A and B are closed, signals such as clocks are no longer supplied to DUT3.
It goes into standby mode.
第2図で述べたのは、クロック信号等入力信号の供給を
止めることによってスタンバイ状態になるDUT 3に
ついての説明であるが、D TJT5によってはスタン
バイ端子またはパワーダウン端子等の名称で呼ばれる端
子の論理レベルを変えることによりスタンバイ状態に整
向するものもある。この場合の実施例を第3図に示す。What was described in Fig. 2 is the explanation about the DUT 3 which enters the standby state by stopping the supply of input signals such as clock signals. Some can be put into standby by changing the logic level. An example in this case is shown in FIG.
この場合にも第2図での説明と同様第1図におけるt1
〜t2の時間タイマ5よりDUTsをスタンバイ状態に
する論理レベルを発生する。In this case as well, t1 in FIG. 1 is similar to the explanation in FIG.
~t2 timer 5 generates a logic level to put the DUTs in standby mode.
以上に述べたようなモニタードエージングを行なうこと
によってt1〜t2のスタンバイ状態時に特性劣化を起
こすDUT3をt2からの動作状態での判定で検出でき
るので不良DUTを排除することができる。By performing the above-described monitored aging, it is possible to detect DUTs 3 whose characteristics deteriorate during the standby state from t1 to t2 by determining them in the operating state from t2, thereby making it possible to eliminate defective DUTs.
なお第2図および第3図で示したタイマ5は、水晶発振
回路とカクンタ論理回路により構成したタイマを用いれ
ば良い。Note that the timer 5 shown in FIGS. 2 and 3 may be a timer configured by a crystal oscillation circuit and a kakuntal logic circuit.
本発明によれば、通常のみのスタンバイ状態で特性が劣
化し、動作状態にすると不良現象が一回復してしまうよ
うな不良現象を示すDUTを排除することが可能である
。According to the present invention, it is possible to eliminate DUTs exhibiting a defective phenomenon whose characteristics are deteriorated only in a normal standby state, but which recover once when put into an operating state.
第1図は本発明で対象とした不良集積回路の特性の動作
モードと経時変化を示したグラフ、第2図および第3図
は本発明の2つの実施例で、第2図はDUTの入力信号
の供給停止によりDUTがスタンバイ状態になる場合、
第3図はDUTがスタンバイ端子またはパワーダウン端
子を備えている場合の実施例である。
1 ・・・ AND ゲ − ト 、2・・・信号
発生部、
3・・・DUT。
4・・・判定部、
5・・・タイマ。
第1圓
to もl t2
し3時間
勇2凹Fig. 1 is a graph showing the operating mode and changes over time in the characteristics of a defective integrated circuit targeted by the present invention, Figs. 2 and 3 are two examples of the present invention, and Fig. 2 is a graph showing the DUT input. When the DUT enters standby state due to stoppage of signal supply,
FIG. 3 shows an embodiment in which the DUT is provided with a standby terminal or a power down terminal. 1...AND gate, 2...signal generation section, 3...DUT. 4... Judgment unit, 5... Timer. 1st circle to also l t2
3 hours 2 concave
Claims (1)
ングの課程で集積回路をパワーダウン(スタンバイ)状
態に一定時間、一回以上おくことを特徴とする集積回路
のモニタードエージング方法。A monitored aging method for integrated circuits, characterized in that the integrated circuit is placed in a power-down (standby) state for a certain period of time or more during the aging process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61046143A JPS62204171A (en) | 1986-03-05 | 1986-03-05 | Monitored aging method for integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61046143A JPS62204171A (en) | 1986-03-05 | 1986-03-05 | Monitored aging method for integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62204171A true JPS62204171A (en) | 1987-09-08 |
Family
ID=12738744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61046143A Pending JPS62204171A (en) | 1986-03-05 | 1986-03-05 | Monitored aging method for integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62204171A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8346499B2 (en) | 2009-09-18 | 2013-01-01 | Renesas Electronics Corporation | Semiconductor device and its testing method |
-
1986
- 1986-03-05 JP JP61046143A patent/JPS62204171A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8346499B2 (en) | 2009-09-18 | 2013-01-01 | Renesas Electronics Corporation | Semiconductor device and its testing method |
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