JPS62199963U - - Google Patents
Info
- Publication number
- JPS62199963U JPS62199963U JP8842086U JP8842086U JPS62199963U JP S62199963 U JPS62199963 U JP S62199963U JP 8842086 U JP8842086 U JP 8842086U JP 8842086 U JP8842086 U JP 8842086U JP S62199963 U JPS62199963 U JP S62199963U
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- amorphous silicon
- silicon material
- conversion film
- transparent substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 3
- 239000002210 silicon-based material Substances 0.000 claims 3
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Description
第１図はこの考案の一実施例を示す断面図、第
２図は光導電流―ドーピング量特性図、第３図は
暗電流―ドーピング量特性図、第４図は従来例を
示す断面図である。
１０……ガラス基板（透明基板）、１１……遮
光膜、１２……光電変換膜、１３，１４……対向
電極。
Fig. 1 is a sectional view showing an embodiment of this invention, Fig. 2 is a photoconductive current-doping amount characteristic diagram, Fig. 3 is a dark current-doping amount characteristic diagram, and Fig. 4 is a sectional view showing a conventional example. be. 10... Glass substrate (transparent substrate), 11... Light shielding film, 12... Photoelectric conversion film, 13, 14... Counter electrode.
Claims (1)
とこの光電変換膜上に積層した対向電極とを透明
基板上に備えたコプレナー型の完全密着型イメー
ジセンサにおいて、非晶質シリコン材料にゲルマ
ニウムをドーピングした遮光膜を透明基板上に形
成し、非晶質シリコン材料による光電変換膜を前
記遮光膜上に形成したことを特徴とする完全密着
型イメージセンサ。 In a coplanar-type fully contact image sensor equipped with a photoelectric conversion film formed of an amorphous silicon material and a counter electrode laminated on the photoelectric conversion film on a transparent substrate, the amorphous silicon material is doped with germanium. 1. A completely contact image sensor, characterized in that a light-shielding film is formed on a transparent substrate, and a photoelectric conversion film made of an amorphous silicon material is formed on the light-shielding film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8842086U JPS62199963U (en) | 1986-06-10 | 1986-06-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8842086U JPS62199963U (en) | 1986-06-10 | 1986-06-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62199963U true JPS62199963U (en) | 1987-12-19 |
Family
ID=30946512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8842086U Pending JPS62199963U (en) | 1986-06-10 | 1986-06-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62199963U (en) |
-
1986
- 1986-06-10 JP JP8842086U patent/JPS62199963U/ja active Pending
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