JPS6219984B2 - - Google Patents
Info
- Publication number
- JPS6219984B2 JPS6219984B2 JP58160764A JP16076483A JPS6219984B2 JP S6219984 B2 JPS6219984 B2 JP S6219984B2 JP 58160764 A JP58160764 A JP 58160764A JP 16076483 A JP16076483 A JP 16076483A JP S6219984 B2 JPS6219984 B2 JP S6219984B2
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- polishing
- plate
- gap
- support plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005498 polishing Methods 0.000 claims description 77
- 239000007788 liquid Substances 0.000 claims description 18
- 230000007423 decrease Effects 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000006061 abrasive grain Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
【発明の詳細な説明】
本発明は被加工物の無歪鏡面に研摩する研摩装
置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a polishing device for polishing a distortion-free mirror surface of a workpiece.
被加工物として、半導体ウエハを例にとると
LSIの集積密度が高まるにつれて、半導体ウエハ
の表面層における結晶欠陥が素子の歩留りに大き
く影響されるため、表面層を無歪に研摩する研摩
装置を開発する要求が高まつている。 Taking a semiconductor wafer as an example of a workpiece,
As the integration density of LSIs increases, crystal defects in the surface layer of semiconductor wafers greatly affect the yield of devices, so there is an increasing demand for the development of polishing equipment that can polish the surface layer without strain.
第１図に従来の研摩装置の一例を示す。第１図
に示すごとく、従来より用いられている研摩装置
では支持板１１に固定された被加工物１２を化学
液に砥粒を懸濁した研摩液１３を介して研摩板１
４に数百ｇ／cm2の圧力で被加工物１２を研摩板１
４に押しつけて、被加工物１２と研摩板１４を相
対運動することにより、被加工物１２を研摩する
装置である。 FIG. 1 shows an example of a conventional polishing device. As shown in FIG. 1, in a conventional polishing device, a workpiece 12 fixed to a support plate 11 is polished by polishing a polishing plate 1 through a polishing liquid 13 in which abrasive grains are suspended in a chemical liquid.
4. Polish the workpiece 12 with a pressure of several hundred g/cm 2 on the polishing plate 1.
This device polishes the workpiece 12 by pressing the workpiece 12 against the polishing plate 4 and moving the workpiece 12 and the polishing plate 14 relative to each other.
しかし、従来の研摩装置を用いると、被加工物
１２が砥粒を介して研摩板１４に押しつけられて
研摩されるため、研摩板１４の砥粒が被加工物１
２に押しこまれる結果、被加工物１２の結晶に歪
が入る欠点があつた。 However, when a conventional polishing device is used, the workpiece 12 is pressed against the polishing plate 14 through the abrasive grains and polished, so the abrasive grains of the polishing plate 14 are applied to the workpiece 12.
2, the crystal of the workpiece 12 is distorted.
本発明の目的はこの欠点を除去し、被加工物を
無歪鏡面に研摩する装置を提供するものである。 The object of the present invention is to eliminate this drawback and provide an apparatus for polishing a workpiece to a distortion-free mirror surface.
本発明の装置は支持板に保持された被加工物が
研摩板とあらかじめ設定された値以上の相対速度
をもつ相対運動する研摩装置において、前記支持
板は被加工物の加工面に垂直方向に移動が自在に
支持されており、研摩板から離れる方向で被加工
物と研摩板の間隙が大きくなると小さくなる傾向
を示す力が前記支持板に働く手段を備え、かつ前
記被加工物は研摩液に浸されていることを特徴と
する研摩装置である。 The device of the present invention is a polishing device in which a workpiece held on a support plate moves relative to the polishing plate at a relative speed of a preset value or more, and the support plate is moved in a direction perpendicular to the processing surface of the workpiece. The workpiece is supported so as to be freely movable, and includes means for applying a force to the support plate that tends to decrease as the gap between the workpiece and the polishing plate increases in the direction away from the polishing plate, and the workpiece is provided with a force that tends to decrease as the gap between the workpiece and the polishing plate increases in the direction away from the polishing plate, and the workpiece is This is a polishing device characterized by being immersed in.
本発明の装置を用いた場合の効果および加工原
理を説明する。本装置は被加工物の加工面に垂直
方向に移動が自在に支持された支持板に被加工物
を保持し、研摩板から離れる方向で、被加工物と
研摩板の間隙が大きくなると小さくなる傾向を示
す力が前記支持板に働く手段を備えてあり、被加
工物は研摩液に浸されていることを特徴としてお
り、前記支持板に働く力で被加工物と研摩板に間
隙が維持されている。 The effects and processing principle when using the apparatus of the present invention will be explained. This device holds the workpiece on a support plate that is movably supported in the direction perpendicular to the processing surface of the workpiece, and the gap between the workpiece and the abrasive plate decreases as the gap between the workpiece and the abrasive plate increases in the direction away from the polishing plate. Means for applying a force indicating a tendency to the support plate is provided, the workpiece is immersed in an abrasive liquid, and the force acting on the support plate maintains a gap between the workpiece and the abrasive plate. has been done.
被加工物と研摩板に間隙を設けた状態で被加工
物と研摩板を被加工物を研摩液に浸した状態であ
らかじめ設定された相対速度以上で相対運動させ
ると、被加工物と研摩板の間隙を流れる研摩液の
流れが生じ、被加工物と研摩板の相対速度が大き
くなればなるほど、被加工物と研摩板の間に介在
する研摩液の圧力が小さくなり、被加工物を固定
している支持板に加わつている研摩板より離そう
とする力に抗して、被加工物と研摩板は微小な間
隙になる。研摩液中に含まれる砥粒が被加工物と
研摩板の間を高速で通過することにより、被加工
物の表面を摩擦し、原子オーダーの加工を行なう
結果、被加工物は研摩される。なお、被加工物と
研摩板の間隙が小さくなると支持板を研摩板より
離そうとする力も大きくなるため、間隙が０にな
ることはない。 When the workpiece and the abrasive plate are moved relative to each other at a preset relative speed or higher with the workpiece immersed in the abrasive liquid with a gap between the workpiece and the abrasive plate, the workpiece and the abrasive plate As a flow of polishing liquid flows through the gap and the relative speed between the workpiece and the polishing plate increases, the pressure of the polishing liquid interposed between the workpiece and the polishing plate decreases, fixing the workpiece. Resisting the force applied to the support plate to separate the polishing plate, a minute gap forms between the workpiece and the polishing plate. The abrasive grains contained in the polishing liquid pass between the workpiece and the polishing plate at high speed, rubbing the surface of the workpiece and performing processing on the atomic order, resulting in the workpiece being polished. Note that as the gap between the workpiece and the polishing plate becomes smaller, the force that tries to separate the support plate from the polishing plate increases, so the gap never becomes zero.
また、被加工物と研摩板の相対運動を止めれ
ば、被加工物と研摩板の間の研摩液の圧力は研摩
前の値になり、被加工物と研摩板の間隙は研摩前
の状態に復元する。従つて、本発明の装置を用い
ると研摩前も研摩中も被加工物は研摩板に接触し
ないため、被加工物表面に歪が入らない利点を有
している。 Furthermore, if the relative movement between the workpiece and the polishing plate is stopped, the pressure of the polishing liquid between the workpiece and the polishing plate will return to the value before polishing, and the gap between the workpiece and the polishing plate will be restored to the state before polishing. . Therefore, when the apparatus of the present invention is used, the workpiece does not come into contact with the polishing plate before or during polishing, so there is an advantage that no distortion is introduced into the surface of the workpiece.
以下実施例により、詳細に説明する。 This will be explained in detail below using examples.
第２図は本発明の装置を示す断面図である。図
に従つて、本発明の装置を説明する。 FIG. 2 is a sectional view showing the device of the present invention. The apparatus of the present invention will be explained according to the figures.
被加工物２１を保持する支持板２２は固定され
たベアリング２３により支持され、フランジ２４
に固定されている。フランジ２４の他方には厚み
方向に着磁している磁石２５が固定されている。
磁石２５と磁力線の向きが反対な固定された磁石
２６を設けており、磁石２５と磁石２６の反発力
を利用して、支持板２２は被加工物２１の加工面
に垂直方向の移動が自在であるとともに被加工物
２１と研摩板２７との間隙が小さくなると矢印２
８方向の力は大きくなる傾向をもつ、また前記傾
向をもつ力を支持板２２に働かせる手段としては
本実施例の磁石を用いた場合の外にバネまたは流
体を用いた方法を用いてもよい。磁石２５と磁石
２６の反発力により支持板２２と研摩板２７とに
間隙２９を設けてあり、被加工物２１は研摩液３
０に浸されている。ここで、研摩板２７を矢印３
１の方向に回転させると研摩板２７と被加工物２
１の間にあらかじめ設定された値以上の相対速度
をもつ相対運動が生じ、被加工物２１と研摩板２
７との間隙２９に研摩液３０の流れが生じ、相対
速度が大きくなればなるほど、間隙２９の圧力は
下がり、支持板２２は研摩板２７の方に吸引され
間隙２９は微小になる。そのため研摩液３０に含
まれる砥粒が間隙２９を高速で通過する際、被加
工物２１を摩擦し被加工物２１は原子オーダーで
加工される。そして、研摩板２７の回転を止めれ
ば被加工物２１と研摩板２７の相対速度がなくな
り、間隙２９の研摩液３０の圧力は研摩前の値に
なり、間隙は研摩前の状態にもどる。従つて、被
加工物２１の表面は研摩板２７に接触しないため
被加工物２１に歪が入ることはない利点がある。 A support plate 22 holding a workpiece 21 is supported by a fixed bearing 23, and a flange 24
is fixed. A magnet 25 magnetized in the thickness direction is fixed to the other side of the flange 24.
A fixed magnet 26 whose lines of magnetic force are opposite in direction to the magnet 25 is provided, and the support plate 22 can freely move in the direction perpendicular to the processing surface of the workpiece 21 by using the repulsive force of the magnet 25 and the magnet 26. At the same time, when the gap between the workpiece 21 and the polishing plate 27 becomes smaller, the arrow 2
The force in the eight directions tends to increase, and as a means for exerting the force with the above-mentioned tendency on the support plate 22, in addition to using the magnet of this embodiment, a method using a spring or a fluid may be used. . A gap 29 is provided between the support plate 22 and the polishing plate 27 due to the repulsive force of the magnets 25 and 26, and the workpiece 21 is coated with the polishing liquid 3.
It is immersed in 0. Here, move the polishing plate 27 to arrow 3.
When rotated in direction 1, the polishing plate 27 and workpiece 2
1, a relative motion with a relative velocity greater than a preset value occurs, and the workpiece 21 and the polishing plate 2
A flow of the polishing liquid 30 is generated in the gap 29 with respect to the polishing plate 7, and as the relative velocity increases, the pressure in the gap 29 decreases, the support plate 22 is attracted toward the polishing plate 27, and the gap 29 becomes minute. Therefore, when the abrasive grains contained in the polishing liquid 30 pass through the gap 29 at high speed, they rub against the workpiece 21 and the workpiece 21 is processed on the atomic order. Then, when the rotation of the polishing plate 27 is stopped, the relative speed between the workpiece 21 and the polishing plate 27 is eliminated, the pressure of the polishing liquid 30 in the gap 29 becomes the value before polishing, and the gap returns to the state before polishing. Therefore, since the surface of the workpiece 21 does not come into contact with the polishing plate 27, there is an advantage that no distortion is introduced into the workpiece 21.
次に本発明の一実施結果を説明する。 Next, one implementation result of the present invention will be explained.
被加工物としてシリコンウエハを用い、粒径
0.01μｍの二酸化シリコンを砥粒として用いた液
中で研摩板を500rpmで回転したところ、シリコ
ンウエハと研摩板との間隙は10μｍ程度になり、
シリコンの研摩速度は10Å／minが得られた。 Using a silicon wafer as the workpiece, the particle size
When a polishing plate was rotated at 500 rpm in a solution using 0.01 μm silicon dioxide as abrasive grains, the gap between the silicon wafer and the polishing plate was about 10 μm.
A silicon polishing speed of 10 Å/min was obtained.
研摩されたシリコンウエハの欠陥を調べるため
に、１方法としてウエツト酸化とSirtlエツチン
グを用いたOSチエツクを行なつたところシリコ
ンウエハに欠陥の発生はみられず、シリコンウエ
ハは無歪であることがわかつた。従つて、本発明
の装置は被加工物を研摩液に浸して、かつ被加工
物と研摩板に間隙を設けるような手段を備えてい
るため、被加工物に歪を発生させることなく、被
加工物を研摩することができる。 In order to investigate defects in polished silicon wafers, we conducted an OS check using wet oxidation and Sirtle etching as one method, and found that no defects were observed on the silicon wafers, indicating that the silicon wafers were free of strain. I understand. Therefore, since the apparatus of the present invention is equipped with means for immersing the workpiece in the polishing liquid and providing a gap between the workpiece and the polishing plate, the workpiece can be polished without causing distortion to the workpiece. Workpieces can be polished.
以上の実施例では被加工物としてシリコンウエ
ハを例にとつて説明したが、シリコンウエハに限
らず、例えば砒素ガリウムウエハあるいはインジ
ウムリンウエハ等の半導体ウエハに対しても本発
明の装置が有効であることはいうまでもない。 Although the above embodiments have been explained using silicon wafers as an example of the workpiece, the apparatus of the present invention is effective not only for silicon wafers but also for semiconductor wafers such as arsenide gallium wafers or indium phosphide wafers. Needless to say.
なお、被加工物の研摩速度を増加することを目
的として、研摩液に被加工物のエツチング作用の
ある化学液を用いてもよい。また、被加工物を保
持している支持板を回転させてもよいし、本実施
例においては研摩板を回転させることにより、被
加工物と研摩板の相対速度をあらかじめ設定した
値以上に保つた相対運動を行なつたが、ドラム形
状の研摩板を用いた一次元的な相対速度をもつ相
対運動に対しても有効である。 In addition, for the purpose of increasing the polishing speed of the workpiece, a chemical liquid having an etching effect on the workpiece may be used as the polishing liquid. Alternatively, the support plate holding the workpiece may be rotated, or in this example, the abrasive plate may be rotated to maintain the relative speed between the workpiece and the abrasive plate at a preset value or higher. Although the above described relative motion was performed, it is also effective for relative motion with one-dimensional relative velocity using a drum-shaped polishing plate.
以上の結果から、本発明の装置を用いることに
より、従来にない無歪鏡面の被加工物を得ること
ができ、例えば、半導体ウエハに対しては、素子
工程における微細化に充分対応できるウエハを得
ることができ、素子形成の歩留りが飛躍的に向上
する。 From the above results, by using the apparatus of the present invention, it is possible to obtain a workpiece with a distortion-free mirror surface that has not been seen before.For example, for semiconductor wafers, wafers that can fully cope with miniaturization in the element process can be obtained. This dramatically improves the yield of device formation.
第１図は従来の研摩装置の断面図であり、第２
図は本発明の研摩装置の断面図である。
図中、１１……支持板、１２……被加工物、１
３……研摩液、１４……研摩板、２１……被加工
物、２２……支持板、２３……ベアリング、２４
……フランジ、２５……磁石、２６……磁石、２
７……研摩板、２８……力の方向、２９……間
隙、３０……研摩液、３１……回転方向を示す。
FIG. 1 is a sectional view of a conventional polishing device, and the second
The figure is a sectional view of the polishing device of the present invention. In the figure, 11...support plate, 12...workpiece, 1
3... Polishing liquid, 14... Polishing plate, 21... Workpiece, 22... Support plate, 23... Bearing, 24
...Flange, 25...Magnet, 26...Magnet, 2
7... Polishing plate, 28... Force direction, 29... Gap, 30... Polishing liquid, 31... Rotation direction.
Claims (1)
らかじめ設定された値以上の相対速度をもつ相対
運動する研摩装置において、前記支持板は被加工
物の加工面に垂直方向に移動が自在に支持されて
おり、研摩板から離れる方向で被加工物と研摩板
の間隙が大きくなると小さくなる傾向を示す力が
前記支持板に働く手段を備えかつ前記被加工物は
研摩液に浸されていることを特徴とする研摩装
置。1. In a polishing device in which a workpiece held on a support plate and a polishing plate move relative to each other at a relative speed greater than a preset value, the support plate is movable in a direction perpendicular to the processing surface of the workpiece. means for applying a force to the support plate that tends to decrease as the gap between the workpiece and the polishing plate increases in the direction away from the polishing plate, and the workpiece is immersed in a polishing liquid. A polishing device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58160764A JPS6052260A (en) | 1983-09-01 | 1983-09-01 | Polishing machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58160764A JPS6052260A (en) | 1983-09-01 | 1983-09-01 | Polishing machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6052260A JPS6052260A (en) | 1985-03-25 |
| JPS6219984B2 true JPS6219984B2 (en) | 1987-05-01 |
Family
ID=15721949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58160764A Granted JPS6052260A (en) | 1983-09-01 | 1983-09-01 | Polishing machine |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6052260A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2534507Y2 (en) * | 1990-07-20 | 1997-04-30 | 東陶機器株式会社 | Cleaning tank lid |
| KR100469363B1 (en) * | 1998-09-03 | 2005-04-06 | 삼성전자주식회사 | CMP facility for semiconductor device manufacturing |
| CN103252712B (en) * | 2013-05-08 | 2015-07-08 | 浙江工业大学 | Wafer polishing magnetic loading clamping device |
| CN103252713B (en) * | 2013-05-08 | 2015-12-02 | 浙江工业大学 | A kind of magnetic load wafer Ginding process and device |
-
1983
- 1983-09-01 JP JP58160764A patent/JPS6052260A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6052260A (en) | 1985-03-25 |
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