JPS6056868A - Polishing device - Google Patents
Polishing deviceInfo
- Publication number
- JPS6056868A JPS6056868A JP58165449A JP16544983A JPS6056868A JP S6056868 A JPS6056868 A JP S6056868A JP 58165449 A JP58165449 A JP 58165449A JP 16544983 A JP16544983 A JP 16544983A JP S6056868 A JPS6056868 A JP S6056868A
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- polishing
- plate
- gap
- support plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は被加工物の表面を無歪鏡面に研摩する研摩装置
に関するものでちる。被加工物として半導体ウェノ・を
例にとるとＬＳＩの集積密度が高まるにつれて、半導体
ウニ／・の表面層における結晶欠陥が素子の歩留りに大
きく影響するため１表面層を無歪にボリシングする研摩
装置の要求が高まっている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a polishing device for polishing the surface of a workpiece to a distortion-free mirror surface. Taking a semiconductor wafer as an example, as the integration density of LSI increases, crystal defects in the surface layer of the semiconductor wafer greatly affect the yield of the device. The demand for
従来用いられている研摩装置は支持板に保持された被加
工物を化学液に砥粒を懸濁した研摩液を介して研摩板に
数百ルーの圧力で押しつけて、被加工物と研摩板の相対
運動によシ、被加工物を研摩する装置である。Conventionally used polishing equipment presses the workpiece held on a support plate against the polishing plate with a pressure of several hundred rou through a polishing liquid containing abrasive grains suspended in a chemical liquid, thereby separating the workpiece and the polishing plate. This is a device that polishes the workpiece by the relative movement of the
しかしながら、この装置を用いると、被加工物が砥粒を
介して、研摩板に押しつけられて、研摩されるため、研
摩板の砥粒が被加工物に押しこまれる結果、被加工物に
欠陥が入る欠点があった。However, when using this device, the workpiece is pressed against the polishing plate through the abrasive grains and polished, so the abrasive grains of the polishing plate are pushed into the workpiece, resulting in defects in the workpiece. There was a drawback that it included.
本発明の装置はこの欠点を除去し、被加工物を無歪鏡面
に研摩する装置を提供するものである。The apparatus of the present invention eliminates this drawback and provides an apparatus for polishing a workpiece to a distortion-free mirror surface.
本発明の装置は、支持板に保持された被加工物と研摩板
があらかじめ設定された値以上の相対速度をもつ相対運
動する研摩装置において、前記支持板は被加工物の加工
面に垂直方向に移動が自在に支持されておシ、研摩板か
ら離れる方向に一定の力が前記支持板に働く手段を備え
かつ前記被加工物は研摩液に浸されていることを特徴と
する特摩装置である。The apparatus of the present invention is a polishing apparatus in which a workpiece held by a support plate and a polishing plate move relative to each other at a relative velocity of a preset value or more, and the support plate is moved in a direction perpendicular to the processing surface of the workpiece. A special polishing apparatus characterized in that the workpiece is movably supported by a polishing plate, and includes means for applying a constant force to the support plate in a direction away from the polishing plate, and the workpiece is immersed in a polishing liquid. It is.
本発明の装置を用いた場合の効果および加工原理を説明
する。本装置は被加工物の加工面に垂直方向に移動が自
在に支持された支持板に被加工物を保持し、研摩板から
離れる方向に一定の力が前記支持板に働く手段を備えて
おり、被加工物は研摩液に浸されていることを特徴とし
ており、前記支持板に働く力で被加工物と研摩板に間隙
が維持されている。The effects and processing principle when using the apparatus of the present invention will be explained. This device holds a workpiece on a support plate that is movably supported in a direction perpendicular to the processing surface of the workpiece, and is equipped with means for applying a constant force to the support plate in a direction away from the polishing plate. , the workpiece is immersed in a polishing liquid, and a gap is maintained between the workpiece and the polishing plate by the force acting on the support plate.
被加工物と研摩板に間隙を設けた状態で被加工物と研摩
板を研摩液中で相対運動させると被加工物と研摩板の間
隙を流れる研摩液の流れが生じ。When the workpiece and the polishing plate are moved relative to each other in the polishing liquid with a gap provided between the workpiece and the polishing plate, a flow of the polishing liquid is generated through the gap between the workpiece and the polishing plate.
被加工物と研摩板の相対速度が大きくなればなるほど、
被加工物と研摩板の間に介在する研摩液の圧力が小さく
なり、被加工物を固定している支持板に加わっている研
摩板よシ離そうとする力に抗して、被加工物と研摩板の
間隙が微小になる。研摩液中に含まれる砥粒が被加工物
と研摩板の微小な間隙を高速で通過することによシ、被
加工物の表面を摩擦し、原子オーダーの加工を行なう結
果被加工物は研摩される。The greater the relative speed between the workpiece and the abrasive plate, the more
The pressure of the polishing liquid interposed between the workpiece and the polishing plate decreases, and the workpiece and polishing resist the force that tries to separate the polishing plate from the support plate that fixes the workpiece. The gap between the plates becomes tiny. The abrasive grains contained in the polishing liquid pass through the small gap between the workpiece and the polishing plate at high speed, rubbing the surface of the workpiece and performing processing on the atomic order, resulting in the workpiece being polished. be done.
また、被加工物と研摩板の相対運動を止めれば被加工物
と研摩板の間の研摩液の圧力は元の値になり、被加工物
と研摩板の間隙は研摩前の状態に復元する。Furthermore, when the relative movement between the workpiece and the polishing plate is stopped, the pressure of the polishing liquid between the workpiece and the polishing plate returns to its original value, and the gap between the workpiece and the polishing plate is restored to its pre-polishing state.
従って１本発明の装置を用いると研摩前も後も被加工物
は研摩板に接触しないため、被加工物に砥粒がおしつけ
られるとともないだめ、被加工物表面に歪が入らない利
点を有している。Therefore, when using the device of the present invention, the workpiece does not come into contact with the polishing plate before or after polishing, so there is an advantage that no distortion is introduced to the surface of the workpiece as the abrasive grains are applied to the workpiece. are doing.
以下実施例により詳細に説明する。This will be explained in detail below using examples.
図は本発明の装置を示す断面図である。図に従って、本
発明の詳細な説明する。被加工物１を保持する支持板２
は固定されたベアリング３に支持されたフランジ４に固
定されてお９．フランジ４の他端はピストン５に連結さ
れている。ピストン５はおもシロとで流体７を介して、
ＴＪ字管８を構成しておυ、矢印９方向に一定の力を作
用している。The figure is a sectional view showing the device of the invention. The present invention will be explained in detail according to the figures. Support plate 2 that holds workpiece 1
9. is fixed to a flange 4 supported by a fixed bearing 3. The other end of the flange 4 is connected to a piston 5. The piston 5 is mainly connected via the fluid 7,
A TJ-shaped tube 8 is configured, and a constant force is applied in the direction of the arrow 9.
そこで被加工物ｌは槽１０内に満された研摩液１１に浸
されており、研摩板１２を矢印１３方向に回転させると
研摩板１２と被加工物ｌの間に相対速度が生ずる結果、
被加工物１と研摩板１２との間隙１４に研摩液１１の流
れが生じ、相対速度が大きくなればなる程間隙１４の圧
力は下がり、支持板２は研摩板１２の方に吸引され１間
隙１４は微小になる。このため、研摩液１１に含まれる
“ 砥粒が間隙１４を高速で通過する際被加工物１を摩
擦し、被加工物ｌは原子オーダーで加工される。There, the workpiece l is immersed in the polishing liquid 11 filled in the tank 10, and when the polishing plate 12 is rotated in the direction of the arrow 13, a relative velocity is generated between the polishing plate 12 and the workpiece l, and as a result,
A flow of the polishing liquid 11 occurs in the gap 14 between the workpiece 1 and the polishing plate 12, and as the relative speed increases, the pressure in the gap 14 decreases, and the support plate 2 is attracted toward the polishing plate 12, and the polishing liquid 11 flows through the gap 14 between the workpiece 1 and the polishing plate 12. 14 becomes minute. Therefore, when the abrasive grains contained in the polishing liquid 11 pass through the gap 14 at high speed, they rub against the workpiece 1, and the workpiece 1 is processed on the atomic order.
そして、Ｎ厚板１２の回転を止めれば、被加工物１と研
摩板１２の相対速度はなくなり１間隙１４の研摩ｉｌｌ
の圧力は研摩前の値にもどシ１間隙１４は研摩前の状態
に復元する。従って１本装置を用いると被加工物１の表
面が研摩板１２に接触しないため、被加工物ｌに歪が入
ることはない利点を有する。Then, when the rotation of the N thick plate 12 is stopped, the relative speed between the workpiece 1 and the polishing plate 12 disappears, and the polishing illumination of the one gap 14 is stopped.
The pressure is returned to its pre-polishing value, and the gap 14 is restored to its pre-polishing state. Therefore, when one apparatus is used, the surface of the workpiece 1 does not come into contact with the polishing plate 12, so there is an advantage that no distortion is introduced into the workpiece 1.
次に本発明の一実施結果を説明する。Next, one implementation result of the present invention will be explained.
被加工物として例えばシリコンウェノ・を用い。For example, silicon wafer is used as the workpiece.
研摩液として１粒径０．Ｏ１μｍの二酸化シリコンを砥
粒として用いた液中で研摩板を５（ｔｏ ｒｐｍで回転
したところ、シリコンウェノＮと研摩板の間隙が１０μ
ｍ程度になり、シリコンの研摩速度はｌ ＯＸ／ｙｒｔ
ｘが得られた。研摩されたクリコンウェノ・の欠陥を調
べるために一方法としてウェット酸化とＳｉｒ＋１エツ
チングを用いたＯＳチェックを行なったところシリコン
ウェハに欠陥の発生はみられず、シリコンウェノ・は無
歪でめることがわかった。As a polishing liquid, 1 particle size is 0. When the abrasive plate was rotated at 5 (to rpm) in a solution using silicon dioxide of 1 μm as an abrasive grain, the gap between the silicon weno N and the abrasive plate was 10 μm.
m, and the polishing speed of silicon is l OX/yrt
x was obtained. When we conducted an OS check using wet oxidation and Sir+1 etching as a method to investigate defects in the polished silicon wafer, no defects were found on the silicon wafer, and the silicon wafer could be finished without distortion. I understand.
従って１本発明の装置は被加工物を研摩液に浸して、被
加工物と研摩板に間隙を設けるような手段を備えている
ため、被加工物に歪を発生させることなく、被加工物を
研摩することができる。Therefore, the apparatus of the present invention has a means for dipping the workpiece in the abrasive liquid and creating a gap between the workpiece and the abrasive plate. can be polished.
以上の実施例では、被加工物としてシリコンウェハを例
にとりて説明したが、シリコンウニ／・に限らず例えば
（比化ガリウムウェノ・、インジウムリンウェハ等の半
導体ウェノ１に対しても本発明の装置が有効であること
は言うまでもない。In the above embodiments, a silicon wafer was used as an example of the workpiece. Needless to say, it is effective.
なお、研摩板より離れる向きで一定の力を支持板に働か
せる手段として実施例においてＵ字管を用いたがボ／グ
等を利用して一定の力を働かせる手段を用いてもよい。Although a U-shaped tube is used in the embodiment as a means for applying a constant force to the support plate in a direction away from the polishing plate, a means for applying a constant force using a bo/g or the like may also be used.
なお、被加工物の研摩速度を増加することを目的として
、研摩液に被加工物のエツチング作用のある化学液を用
いてもよい。In addition, for the purpose of increasing the polishing speed of the workpiece, a chemical liquid having an etching effect on the workpiece may be used as the polishing liquid.
以上の結果から１本発明の装置を用いることによシ、従
来にない無歪鏡面の被加工物を得ることができ、例えば
半導体ウェノ・の場合には、素子工程における微細化に
充分対応できるウェノ・を得ることができ、素子形成の
歩留りが飛開的に向上する。From the above results, 1. By using the apparatus of the present invention, it is possible to obtain a workpiece with a distortion-free mirror surface that has never been seen before, and for example, in the case of semiconductor wafers, it is fully compatible with miniaturization in the element process. The yield of device formation is dramatically improved.
図は本発明の研Ｈ装置の断面図である。
図において、１・・・被加工物、２・・・支持板、３・
・・ベアリング、４・・・フランジ、５・・・ピストン
、６・・・おもシ、７ ・流体、８−Ｕ字管、９・・・
力の方向、１０・・・槽、１１・・研摩液、１２・・・
研摩板、１３ 回転方向、１４・・・間隙を示す。The figure is a sectional view of the polishing apparatus of the present invention. In the figure, 1... workpiece, 2... support plate, 3...
... Bearing, 4... Flange, 5... Piston, 6... Main, 7 - Fluid, 8-U-shaped tube, 9...
Direction of force, 10...tank, 11...polishing liquid, 12...
Polishing plate, 13 rotation direction, 14... indicates gap.
Claims (1)
された値以上の相対速度をもつ相対運動する研摩装置に
おいて、前記支持板は被加工物の加工面に垂直方向に移
動が自在に支持されておシ、研摩板から離れる方向に一
定の力が前記支持板に働く手段を備えかつ、前記被加工
物は研摩液に浸されていることを特徴とする研摩装置。In a polishing device in which a workpiece held by a support plate and a polishing plate move relative to each other at a relative speed greater than a preset value, the support plate is supported so as to be freely movable in a direction perpendicular to a processing surface of the workpiece. A polishing device comprising means for applying a constant force to the support plate in a direction away from the polishing plate, and wherein the workpiece is immersed in a polishing liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58165449A JPS6056868A (en) | 1983-09-08 | 1983-09-08 | Polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58165449A JPS6056868A (en) | 1983-09-08 | 1983-09-08 | Polishing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6056868A true JPS6056868A (en) | 1985-04-02 |
Family
ID=15812630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58165449A Pending JPS6056868A (en) | 1983-09-08 | 1983-09-08 | Polishing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6056868A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5679212A (en) * | 1993-05-27 | 1997-10-21 | Shin-Etsu Handotai Co., Ltd. | Method for production of silicon wafer and apparatus therefor |
| US5968849A (en) * | 1995-06-26 | 1999-10-19 | Motorola, Inc. | Method for pre-shaping a semiconductor substrate for polishing and structure |
-
1983
- 1983-09-08 JP JP58165449A patent/JPS6056868A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5679212A (en) * | 1993-05-27 | 1997-10-21 | Shin-Etsu Handotai Co., Ltd. | Method for production of silicon wafer and apparatus therefor |
| US5968849A (en) * | 1995-06-26 | 1999-10-19 | Motorola, Inc. | Method for pre-shaping a semiconductor substrate for polishing and structure |
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