CN103252713B - A kind of magnetic load wafer Ginding process and device - Google Patents
A kind of magnetic load wafer Ginding process and device Download PDFInfo
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- CN103252713B CN103252713B CN201310170615.4A CN201310170615A CN103252713B CN 103252713 B CN103252713 B CN 103252713B CN 201310170615 A CN201310170615 A CN 201310170615A CN 103252713 B CN103252713 B CN 103252713B
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Abstract
A kind of magnetic load wafer Ginding process, produce the magnetic field force of two like magnetic poles repel each other between the magnet steel that this Ginding process adopts the relative mode of homopolarity to install to be pasted on loading disc and top lap, the noncontact realizing grinding pressure loads.And a kind of magnetic load wafer lapping device is provided, buffer solution is full of in housing, loading disc is positioned at housing cavity bottom, top lap is positioned at the below of loading disc, loading disc lower surface is provided with loading magnet steel, top lap upper surface is provided with stand under load magnet steel, loading magnet steel and stand under load magnet steel are permanent magnet, and the opposite face loading magnet steel and stand under load magnet steel is identical polar, wafer is installed in the bottom surface of lower abrasive disk, the below of wafer is lower abrasive disk, and shell is stretched out in load bar upper end, and load bar lower end is fixedly mounted on loading disc.The present invention reduces grinding vibration, reduces fragment rate during wafer grinding, and improves the surface quality of wafer, promotes working (machining) efficiency.
Description
Technical field
The present invention relates to wafer grinding technical field, refer to especially a kind of utilize magnetic field to carry out loading wafer grinding method and device.
Background technology
Cmp (CMP, ChemicalMechanicalPolishing) is by machinery, the chemical action between abrasive particle-workpiece-processing environment, and the trace realizing workpiece material is removed, and can obtain the finished surface of ultra-smooth, few damage; Machining locus presents multidirectional, is conducive to the uniformity consistency of finished surface.And CMP is the technology that can be provided in global planarization on whole round silicon wafer unique at present, while acquisition super-smooth surface, the overall flatness of silicon chip can be ensured.
The element of chemical machinery polishing system comprises, lower abrasive disk and silicon wafer clamping device, wafer is pasted on top lap, top lap is arranged in device for clamping wafer, top lap is brought pressure to bear on by the charger in clamping device, instantly when abrasive disk rotates, chemical reaction thin layer is formed by the corrosiveness of solution, utilize the activity of soft abrasiye and because of the fricative high pressure at microscopic contact degree between abrasive particle and workpiece, high temperature, solid phase reaction can be there is within very short time of contact, the mechanical friction effect of this reaction product passive movement abrasive particle is subsequently removed, the grinding realizing wafer is thinning.But adopt the load mode such as cylinder, counterweight in existing lapping device, the vibration produced in its running will have a strong impact on surface quality more, occur surface and subsurface stratum damage, even fragment, will greatly constrain working (machining) efficiency and the quality of ultra thin wafer.
Summary of the invention
The problem that vibration is comparatively large, have a strong impact on surface quality, restriction working (machining) efficiency is caused in order to solve rigidity load mode in wafer grinding, the invention provides a kind of reduction and grind vibration, reduce fragment rate during wafer grinding, and improve the surface quality of wafer, promote magnetic load wafer Ginding process and the device of working (machining) efficiency.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of magnetic load wafer Ginding process, produce the magnetic field force of two like magnetic poles repel each other between the magnet steel that this Ginding process adopts the relative mode of homopolarity to install to be pasted on loading disc and top lap, the noncontact realizing grinding pressure loads.
Further, between loading disc and top lap, buffer solution is full of.
A kind of magnetic load wafer lapping device, comprise device for clamping wafer and lower abrasive disk, in described device for clamping wafer, load bar is installed, housing, buffer solution, loading disc, load magnet steel, top lap and stand under load magnet steel, buffer solution is full of in described housing, described loading disc is positioned at housing cavity bottom, top lap is positioned at the below of loading disc, loading disc lower surface is provided with loading magnet steel, top lap upper surface is provided with stand under load magnet steel, loading magnet steel and stand under load magnet steel are permanent magnet, and the opposite face loading magnet steel and stand under load magnet steel is identical polar, described wafer is installed in the bottom surface of described lower abrasive disk, the below of described wafer is lower abrasive disk, described shell is stretched out in described load bar upper end, described load bar lower end is fixedly mounted on described loading disc.
Beneficial effect of the present invention is mainly manifested in: the magnetic realizing wafer grinding loads, and reduces grinding vibration, reduces fragment rate during wafer grinding, and improve the surface quality of wafer, realize not damaged wafer grinding.
Accompanying drawing explanation
Fig. 1 is that magnetic of the present invention loads Ginding process schematic diagram.
Fig. 2 is that magnetic of the present invention loads lapping device schematic diagram.
Fig. 3 is loading disc magnet steel annular magnetic strip arrangements top view of the present invention.
Fig. 4 is loading disc magnet steel vertical bar shaped magnetic strip arrangements top view of the present invention.
Fig. 5 is loading disc magnet steel square magnet steel cell layout top view of the present invention.
Fig. 6 is that loading disc and top lap opposing polarities arrange schematic diagram.
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention is described further.
Embodiment 1
With reference to Fig. 1, a kind of magnetic loads chemical and mechanical grinding method, and produce the magnetic field force of two like magnetic poles repel each other between the magnet steel that this Ginding process adopts the relative mode of homopolarity to install to be pasted on loading disc and top lap, the noncontact realizing grinding pressure loads.
Further, between loading disc and top lap, buffer solution is full of.
This chemical machinery polishing system comprises top lap 6, lower abrasive disk 9 and two silicon wafer clamping devices 13.Described lower abrasive disk 9 at the uniform velocity rotates under power set 15 transmission, wafer 7 is pasted on the lower surface of described top lap 6, described top lap 6 is arranged in described device for clamping wafer 13, is brought pressure to bear on the loading disc 4 in device for clamping wafer by the charger 11 in clamping device.Described charger 11 adopts nut-screw rod structure, is arranged on the crossbeam 10 of grinder, and described crossbeam 10 is supported in grinder frame by two root posts 14.
Embodiment 2
With reference to Fig. 2, a kind of magnetic loads chemical mechanical polishing device, comprise device for clamping wafer 13 and lower abrasive disk 9, load bar 1, housing 2, buffer solution 3, loading disc 4 are installed in device for clamping wafer 13, load magnet steel 5, top lap 6, wafer 7, stand under load magnet steel 8 etc.Described housing 2 is full of buffer solution 3, described loading disc 4 lower surface is provided with and loads magnet steel 5, described stand under load magnet steel 8 is installed in described top lap 6 upper surface, described loading magnet steel 5 and described stand under load magnet steel 8 are permanent magnet, and the opposite face of described loading magnet steel 5 and described stand under load magnet steel 8 is identical polar (being all N pole or S pole), when described load bar 1 is subject to the loading force of described charger 11, described loading disc 4 moves downward, when arriving the air gap thickness of magnetic pole effect, loading force is delivered to described top lap 6 by permanent magnet with the repulsion of interpolar, realize noncontact to load, and be full of described buffer solution 3 due to described loading disc 4 and described top lap 6, can in described lower abrasive disk 9 at the uniform velocity rotary course, reduce grinding vibration, realize the not damaged grinding of described wafer 7.When described lower abrasive disk 9 rotates, utilize the mechanical friction effect of motion abrasive particle to remove excess stock, the grinding realizing wafer is thinning.
Fig. 3 is loading disc 4 magnet steel annular magnetic strip arrangements top view of the present invention.Annular magnetic stripe 16 is evenly distributed on inside corresponding annulus according to its inner circle and exradius every 4 group, circle ring center is the center of circle of loading disc 4, between annular magnetic stripe and annular magnetic stripe, the angle at interval is all equal, and the distance between adjacent two annulus is also equal.
Fig. 4 is loading disc 4 magnet steel vertical bar shaped magnetic strip arrangements top view of the present invention.Vertical bar shaped magnetic stripe 17 is evenly distributed on inside corresponding annulus according to its inner circle and exradius 8 group, and circle ring center is the center of circle of loading disc 4, and the angle of being separated by between adjacent two vertical bar shaped magnetic stripes is all equal.
Fig. 5 is loading disc 4 magnet steel square magnet steel cell layout top view of the present invention.Box-shaped magnet steel 18 1 groups 8 is evenly distributed on the ground floor of least radius circumferentially, the angle at adjacent two box-shaped magnet steel intervals is equal, the second layer is circumferentially then with the box-shaped magnet steel 18 of same formal distribution 16 formed objects, third layer circumferentially magnet steel distribution the like, adjacent two radius of a circle differences are equal.
Fig. 6 is that loading disc 4 and top lap opposing polarities arrange schematic diagram.As shown in the figure, 4 is loading disc, and 5 for loading magnet steel, and 6 is top lap, and 8 is stand under load magnet steel.Loading magnet steel 5 on described loading disc 4 arranges it is identical (being all N pole or S pole) with described top lap 6 magnetic pole, and the shape of described loading magnet steel and described stand under load magnet steel, distribution mode, distributing position are identical.The present invention can adopt wherein a kind of magnet steel distribution mode of method shown in Fig. 3 ~ Fig. 5, effectively to produce by like pole the noncontact loading that repulsion realizes grinding pressure.
Content described in this description embodiment is only enumerating the way of realization of inventive concept; should not being regarded as of protection scope of the present invention is only limitted to the concrete form that embodiment is stated, protection scope of the present invention also and conceive the equivalent technologies means that can expect according to the present invention in those skilled in the art.
Claims (1)
1. a magnetic load wafer lapping device, it is characterized in that: comprise device for clamping wafer and lower abrasive disk, in described device for clamping wafer, load bar is installed, housing, buffer solution, loading disc, load magnet steel, top lap and stand under load magnet steel, buffer solution is full of in described housing, described loading disc is positioned at housing cavity bottom, top lap is positioned at the below of loading disc, loading disc lower surface is provided with loading magnet steel, top lap upper surface is provided with stand under load magnet steel, loading magnet steel and stand under load magnet steel are permanent magnet, and the opposite face loading magnet steel and stand under load magnet steel is identical polar, described wafer is installed in the bottom surface of described lower abrasive disk, the below of described wafer is lower abrasive disk, described housing is stretched out in described load bar upper end, described load bar lower end is fixedly mounted on described loading disc.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310170615.4A CN103252713B (en) | 2013-05-08 | 2013-05-08 | A kind of magnetic load wafer Ginding process and device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310170615.4A CN103252713B (en) | 2013-05-08 | 2013-05-08 | A kind of magnetic load wafer Ginding process and device |
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| Publication Number | Publication Date |
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| CN103252713A CN103252713A (en) | 2013-08-21 |
| CN103252713B true CN103252713B (en) | 2015-12-02 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107030593A (en) * | 2016-01-29 | 2017-08-11 | 宇龙计算机通信科技(深圳)有限公司 | A kind of milling apparatus and Ginding process |
| CN106141899A (en) * | 2016-08-03 | 2016-11-23 | 浙江工业大学 | A kind of wafer grinding processing unit (plant) |
Citations (4)
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| SU766842A1 (en) * | 1978-07-27 | 1980-09-30 | Предприятие П/Я Р-6707 | Machine for machining flat surfaces of workpieces |
| US7066785B2 (en) * | 2003-01-10 | 2006-06-27 | Samsung Electronics Co., Ltd. | Polishing apparatus and related polishing methods |
| CN103072069A (en) * | 2012-12-19 | 2013-05-01 | 广东工业大学 | Magneto-rheological effect viscoelastic clamping electroceramic substrate flexible grinding and polishing device and method |
| CN203266387U (en) * | 2013-05-08 | 2013-11-06 | 浙江工业大学 | Magnetic-loading wafer polishing device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6052260A (en) * | 1983-09-01 | 1985-03-25 | Nec Corp | Polishing machine |
| JPH08155831A (en) * | 1994-12-06 | 1996-06-18 | Nippondenso Co Ltd | Polishing device and polishing method |
| JP2001025958A (en) * | 1999-07-13 | 2001-01-30 | Zebiosu:Kk | Grinding mechanism making use of magnetic force |
| KR101036605B1 (en) * | 2008-06-30 | 2011-05-24 | 세메스 주식회사 | Substrate supporting unit and single type substrate polishing apparatus using the same |
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2013
- 2013-05-08 CN CN201310170615.4A patent/CN103252713B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU766842A1 (en) * | 1978-07-27 | 1980-09-30 | Предприятие П/Я Р-6707 | Machine for machining flat surfaces of workpieces |
| US7066785B2 (en) * | 2003-01-10 | 2006-06-27 | Samsung Electronics Co., Ltd. | Polishing apparatus and related polishing methods |
| CN103072069A (en) * | 2012-12-19 | 2013-05-01 | 广东工业大学 | Magneto-rheological effect viscoelastic clamping electroceramic substrate flexible grinding and polishing device and method |
| CN203266387U (en) * | 2013-05-08 | 2013-11-06 | 浙江工业大学 | Magnetic-loading wafer polishing device |
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