JPS62197846U - - Google Patents

Info

Publication number
JPS62197846U
JPS62197846U JP8670586U JP8670586U JPS62197846U JP S62197846 U JPS62197846 U JP S62197846U JP 8670586 U JP8670586 U JP 8670586U JP 8670586 U JP8670586 U JP 8670586U JP S62197846 U JPS62197846 U JP S62197846U
Authority
JP
Japan
Prior art keywords
sample
chamber
plasma
load lock
communicates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8670586U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8670586U priority Critical patent/JPS62197846U/ja
Publication of JPS62197846U publication Critical patent/JPS62197846U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Waveguide Connection Structure (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案装置の縦断面図、第2図は従来
装置の縦断面図である。 1……プラズマ生成室、2……導波管、3……
反応室、4……励磁コイル、5……ロードロツク
室、5c……移載テーブル、6……ホルダ、S…
…ホルダ。
FIG. 1 is a longitudinal sectional view of the device of the present invention, and FIG. 2 is a longitudinal sectional view of the conventional device. 1... Plasma generation chamber, 2... Waveguide, 3...
Reaction chamber, 4... Excitation coil, 5... Load lock chamber, 5c... Transfer table, 6... Holder, S...
…holder.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] プラズマ生成室と、該プラズマ生成室に連通し
、試料にプラズマを投射する試料室と、前記試料
室と連通し、試料の交換を行うロードロツク室と
を具備するプラズマ装置において、前記試料室は
プラズマ生成室の上方に、またロードロツク室は
試料室の側方に配設すると共に、試料を保持して
前記ロードロツク室と試料室との間を往復移動し
、試料室内でプラズマ生成室側に向けて試料を下
向きに保持するホルダを具備することを特徴とす
るプラズマ装置。
In the plasma apparatus, the sample chamber includes a plasma generation chamber, a sample chamber that communicates with the plasma generation chamber and projects plasma onto a sample, and a load lock chamber that communicates with the sample chamber and exchanges the sample. The load lock chamber is disposed above the generation chamber and on the side of the sample chamber, and the sample is held and moved back and forth between the load lock chamber and the sample chamber, and the sample is moved toward the plasma generation chamber side within the sample chamber. A plasma device characterized by comprising a holder that holds a sample facing downward.
JP8670586U 1986-06-06 1986-06-06 Pending JPS62197846U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8670586U JPS62197846U (en) 1986-06-06 1986-06-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8670586U JPS62197846U (en) 1986-06-06 1986-06-06

Publications (1)

Publication Number Publication Date
JPS62197846U true JPS62197846U (en) 1987-12-16

Family

ID=30943259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8670586U Pending JPS62197846U (en) 1986-06-06 1986-06-06

Country Status (1)

Country Link
JP (1) JPS62197846U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6153719A (en) * 1984-08-24 1986-03-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor crystalline film manufacturing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6153719A (en) * 1984-08-24 1986-03-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor crystalline film manufacturing device

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