JPS62196858A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS62196858A JPS62196858A JP3979586A JP3979586A JPS62196858A JP S62196858 A JPS62196858 A JP S62196858A JP 3979586 A JP3979586 A JP 3979586A JP 3979586 A JP3979586 A JP 3979586A JP S62196858 A JPS62196858 A JP S62196858A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- reaction
- titanium nitride
- prevent
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 239000010936 titanium Substances 0.000 claims abstract description 18
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 230000004927 fusion Effects 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 239000010432 diamond Substances 0.000 abstract description 6
- 229910003460 diamond Inorganic materials 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 230000003449 preventive effect Effects 0.000 abstract 2
- 230000002265 prevention Effects 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 206010040844 Skin exfoliation Diseases 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910001258 titanium gold Inorganic materials 0.000 description 1
- -1 titanium gold nitride Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野Ｊ
本発明は、半導体装置に使用するヒートシンクの電極構
造に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application J] The present invention relates to an electrode structure of a heat sink used in a semiconductor device.
〔従来の技術ｊ
従来、半導体装置に使用するヒートシンクの電極構造と
しては、ヒートシンクの上にＴｉ鳩を形成し、その上に
Ｐｔなどを含むバリア用金属さらにその上に融着材とし
て少なくとも５ｎｆｆ：含む金属を形成する構造となっ
ていた。[Prior art j] Conventionally, as an electrode structure of a heat sink used in a semiconductor device, a Ti dove is formed on the heat sink, a barrier metal containing Pt or the like is placed on top of the Ti dove, and at least 5nff is placed on top of the barrier metal as a fusion material: It had a structure that formed a metal containing.
し発明が解決しょうとする問題点ｊ
一般にＳｎはその融点以上の温度では他の金属との反応
性が高く容易に金属間化合物を形成しやすい。これらの
金属間化合物は一般に脆くなりやすいＯ
上述しｔ従来の１ＪＬ極構造のヒートシンクでは半導体
素子をヒートシンクにマウントする時などの高温処理工
程に工りＳｎとバリア用金属が反応しさらには、’ｌ’
ｉ、ｌ！：Ｓｎの反応が起こる。これらの反応が起こる
と金属が脆くなりやすく、特に上記した反応がＳｎとＴ
ｉの反応まで及ぶダイヤモンドと金属間でハガレが起こ
る危険性が高くなる。またこの様な脆性化が進むと一般
に熱抵抗が増加し、ヒートシンクの効果が低減される。Problems to be Solved by the Invention j In general, Sn is highly reactive with other metals at temperatures above its melting point and easily forms intermetallic compounds. These intermetallic compounds generally tend to become brittle.As mentioned above, in the conventional 1JL heat sink, Sn reacts with the barrier metal during a high-temperature treatment process such as when mounting a semiconductor element on the heat sink. l'
i, l! :Sn reaction occurs. When these reactions occur, metals tend to become brittle, especially when the above reactions occur with Sn and T.
There is a high risk of peeling between the diamond and the metal, which will extend to the reaction of i. Further, as such embrittlement progresses, thermal resistance generally increases, reducing the effectiveness of the heat sink.
半導体素子に１つでは、この様な熱抵抗の増加が素子特
性の低下、さらには動作温度上昇による劣化の促進に結
びつく。In a semiconductor device, such an increase in thermal resistance leads to a decrease in device characteristics and further to acceleration of deterioration due to an increase in operating temperature.
本発明の電極構造は、従来のＴｉとＳｎの反応に工る、
金属間のハガレを防止するために、Ｔｉ層と最上層のＳ
ｎを含む合金層との間に窒化チタンｊ−を反応防止層と
して挿入する事を特徴としている。窒化チタン層はａｎ
を含む融着用合金が融ける程度の温度では極めて安定で
Ｓｎとの反応性はほとんどな（Ｓｎの反応防止層として
十分効果がある。し友がって半導体素子をマウントする
際においてもＳｎと他の金属との反応は、窒化チタン層
で停止し、Ｔｉ（！：Ｓｎの反応は起らないためＳｎと
Ｔｉの反応にＬる脆性化は進まず、Ｔｉとダイヤモンド
又はシリコン間の密着性の劣化、熱抵抗の増加は防止さ
れる。The electrode structure of the present invention is based on the conventional reaction between Ti and Sn.
To prevent peeling between metals, the Ti layer and the top layer S
It is characterized by inserting titanium nitride j- as a reaction prevention layer between the alloy layer containing n. The titanium nitride layer is an
It is extremely stable at temperatures that melt the fusion alloy containing Sn, and has almost no reactivity with Sn (it is sufficiently effective as a reaction prevention layer for Sn. The reaction with the metal stops at the titanium nitride layer, and the reaction of Ti(!:Sn) does not occur, so the embrittlement that occurs in the reaction between Sn and Ti does not progress, and the adhesion between Ti and diamond or silicon does not progress. Deterioration and increase in thermal resistance are prevented.
本発明の実施例を図面を参照して説明する。 Embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例の断面図である。ダイヤモン
ド１の表面にＴｉ層２をスパッタ法にて被着する。この
Ｉｌｌ ｉ鳩の上層にＮ２雰囲気中にてスパッタを行な
う事により反応防止層として窒化チタン層３を形成し、
さらに窒化チタン層の上層にＰｔ層４と形成し最上層に
融着用金属としてＡｕ Ｓｎ ５を形成し、その上に半
導体素子６をマウントしている。FIG. 1 is a sectional view of an embodiment of the present invention. A Ti layer 2 is deposited on the surface of the diamond 1 by sputtering. A titanium nitride layer 3 is formed as a reaction prevention layer on the upper layer of this layer by sputtering in an N2 atmosphere,
Further, a Pt layer 4 is formed on the titanium nitride layer, and Au Sn 5 is formed as a fusion metal on the uppermost layer, and a semiconductor element 6 is mounted thereon.
ま九側面・裏面には導通のために、表面のＰｔＪｆＩま
でと同様の層７を形成した。A layer 7 similar to that up to PtJfI on the front surface was formed on the side and back surfaces for conduction.
この様にＡｕ ＳｎとＴｉとの間に反応防止層として窒
化チタン金はさむ事によりＴｉとＳｎの反応を防き゛、
熱抵抗の増加による素子特性の低下及びＩｌｌ ｉとダ
イヤモンド間での電極ハガレを防止することができたＯ
〔発明の効果Ｊ
以上説明した工うに、本発明はＴｉとＳｎの反応防止層
として窒化チタン層を含むことに裏、９．ＴｉとＳｎの
反応による不具合を防止することができる効果がある。In this way, by sandwiching titanium gold nitride as a reaction prevention layer between Au Sn and Ti, the reaction between Ti and Sn is prevented.
It was possible to prevent the deterioration of device characteristics due to an increase in thermal resistance and the electrode peeling between Illi and diamond. 9. The back includes a titanium layer. This has the effect of preventing problems caused by the reaction between Ti and Sn.
第１図は本発明の一実施例を示す断面図である。
１・・・ダイヤモンド、２・・・Ｔｉ層、３・・・窒化
チタン層、４・・・Ｐｔ層、５・・・Ａｕ１ｎ、６・・
・半導体素子、７・・・導通用メタル
代理人 弁理士 内 原 ”ｆ’ 、”” ’
１（、−１，゛FIG. 1 is a sectional view showing one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1...Diamond, 2...Ti layer, 3...Titanium nitride layer, 4...Pt layer, 5...Au1n, 6...
・Semiconductor element, 7...Conducting metal agent Patent attorney Uchihara "f',""'
1(,-1,゛
Claims (1)
ｉもしくはＣｒの上層に窒化チタン層を形成しかつ最上
層に少なくともＳｎを含む融着用金属合金層を形成し、
その上に半導体素子をマウントしたことを特徴とする半
導体装置。Ti or Cr is formed on the surface of the heat sink, and the T
forming a titanium nitride layer on the i or Cr layer, and forming a fusion metal alloy layer containing at least Sn on the top layer;
A semiconductor device characterized by having a semiconductor element mounted thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3979586A JPS62196858A (en) | 1986-02-24 | 1986-02-24 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3979586A JPS62196858A (en) | 1986-02-24 | 1986-02-24 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62196858A true JPS62196858A (en) | 1987-08-31 |
Family
ID=12562886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3979586A Pending JPS62196858A (en) | 1986-02-24 | 1986-02-24 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62196858A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5299214A (en) * | 1991-07-01 | 1994-03-29 | Sumitomo Electric Industries, Ltd. | Heat radiating component and semiconductor device provided with the same |
| EP0714126A1 (en) * | 1994-11-23 | 1996-05-29 | AT&T Corp. | Compliant layer metallization |
-
1986
- 1986-02-24 JP JP3979586A patent/JPS62196858A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5299214A (en) * | 1991-07-01 | 1994-03-29 | Sumitomo Electric Industries, Ltd. | Heat radiating component and semiconductor device provided with the same |
| EP0714126A1 (en) * | 1994-11-23 | 1996-05-29 | AT&T Corp. | Compliant layer metallization |
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