JPS62196821A - Manufacture of thin-film - Google Patents
Manufacture of thin-filmInfo
- Publication number
- JPS62196821A JPS62196821A JP61038476A JP3847686A JPS62196821A JP S62196821 A JPS62196821 A JP S62196821A JP 61038476 A JP61038476 A JP 61038476A JP 3847686 A JP3847686 A JP 3847686A JP S62196821 A JPS62196821 A JP S62196821A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- nozzle
- fluorine
- chemical reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 6
- 239000011737 fluorine Substances 0.000 claims abstract description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 5
- 229910000077 silane Inorganic materials 0.000 claims abstract description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 239000010408 film Substances 0.000 abstract description 16
- 229910007264 Si2H6 Inorganic materials 0.000 abstract description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 125000001153 fluoro group Chemical group F* 0.000 abstract 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
- 239000002994 raw material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は薄膜製造法に関し、特に弗素系水素化アそルフ
１スシリコン薄膜を簡便に製造する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a thin film manufacturing method, and more particularly to a method for easily manufacturing a fluorine-based hydrogenated amorphous silicon thin film.
［従来の技術］
弗素を含んだ水素化アモルファスシリコン（以下ａ−５
ｔ：Ｈ：Ｆと略記）薄膜は太陽電池用材料として劣化が
少ない優れた材料と考えられている。従来、ａ−５ｉ：
Ｈ：Ｆ膜の製造は、Ｓｉｎ Ｆ２ｎ＋２、または５ｉＨ
ｎＦ ａ−ｎ またはＳｉｎ Ｆ ２ｎ＋２とＦ２を原
料にし、グロー放電を利用したプラズマＣＶＤ法が知ら
れていた。しかし、このような方法は、膜製造過程にお
いては高エネルギー粒子による膜の損傷が考えられる。[Prior art] Hydrogenated amorphous silicon containing fluorine (hereinafter referred to as a-5)
(abbreviated as t:H:F) thin film is considered to be an excellent material for solar cells with little deterioration. Conventionally, a-5i:
The H:F film is manufactured using Sin F2n+2 or 5iH
A plasma CVD method using nF a-n or Sin F 2n+2 and F2 as raw materials and utilizing glow discharge has been known. However, in such a method, the film may be damaged by high-energy particles during the film manufacturing process.
さらに、プラズマ発生のための発振周波数、印加電圧、
基板配置など数多くの条件設定を行わねばならず、操作
上複雑であり、かつ高周波電源を用いるために高価でも
ある。Furthermore, the oscillation frequency for plasma generation, applied voltage,
Many conditions such as substrate placement must be set, the operation is complicated, and it is expensive because it uses a high frequency power source.
［発明が解決しようとする問題点］
子、Ｐで 犬、堡口日の目的も士 μ；ボ１．ｔ−上う
む■顕点に鑑み、高エネルギー粒子による膜の損傷がな
く、操作が極めて簡単であり、しかも廉価にａ−５ｉ：
Ｈ：Ｆ膜を製造できる方法を提供することにある。[Problem to be solved by the invention] The purpose of the child, P, and the dog, Hakuchi day μ;Bo1. t-Kami Umu ■ Considering the observation point, there is no damage to the membrane by high-energy particles, the operation is extremely simple, and the a-5i is inexpensive:
An object of the present invention is to provide a method for manufacturing an H:F film.
［問題点を解決するための手段］
かかる目的を達成するために、本発明では、それぞれ、
別の流路を通ってきた弗素とシランを、ノズルを経て反
応容器中に噴射し、ここで気相化学反応を起こさせる、
この反応は何ら外部からのエネルギーを加えることなく
、室温において行われる。[Means for Solving the Problems] In order to achieve the above objectives, the present invention provides the following:
Fluorine and silane that have passed through separate channels are injected into a reaction vessel through a nozzle, where a gas phase chemical reaction occurs.
This reaction takes place at room temperature without applying any external energy.
反応領域の近傍に基板を設置することにより、この基板
上にａ−Ｓｔ：Ｈ：Ｆ膜が堆積される。By placing a substrate near the reaction region, an a-St:H:F film is deposited on this substrate.
［作 用］
本発明によれば、Ｆ２とＳｔ、 Ｈ２ｎ＋２とを２重ノ
ズルより反応容器に同時に噴出させて化学反応を起こさ
せ、反応が起こっている近傍に設置した基板上に、ａ−
５ｉ：Ｈ：Ｆ膜を得ることができる。[Function] According to the present invention, F2, St, and H2n+2 are simultaneously ejected into a reaction container from a double nozzle to cause a chemical reaction, and a-
A 5i:H:F film can be obtained.
［実施例コ
以下に、図面に基づいて本発明を詳細かつ具体的に説明
する。[Example] The present invention will be described below in detail and specifically based on the drawings.
第１図（Ａ）および（Ｂ）は本発明の一実施例を示す。FIGS. 1A and 1B show an embodiment of the present invention.
ここで、１は反応容器、２．３は反応容器１に原料ガス
を導入する管、４は各原料ガスの流量を調節する弁、５
は導入管２，３から導入されたガスを、それぞれシート
状の層流を作るための導管であり、６はその先端部の２
重ノズルであり、ここから反応容器１に原料ガスが噴射
される。第１図（Ｂ）に２重ノズル６の断面を示し、７
が内側ノズルで導管２から流入したガスの噴射口、８は
外側ノズルで導管３から流入したガスの噴射口である。Here, 1 is a reaction vessel, 2.3 is a pipe that introduces the raw material gas into the reaction vessel 1, 4 is a valve that adjusts the flow rate of each raw material gas, and 5
6 is a conduit for creating a sheet-like laminar flow of the gas introduced from the introduction pipes 2 and 3, and 6 is a conduit for forming a sheet-like laminar flow of the gas introduced from the introduction pipes 2 and 3.
This is a heavy nozzle from which raw material gas is injected into the reaction vessel 1. FIG. 1(B) shows a cross section of the double nozzle 6.
8 is an inner nozzle, which is an injection port for the gas flowing in from the conduit 2, and 8 is an outer nozzle, which is an injection port for the gas flowing in from the conduit 3.
９は膜堆積用基板、ｌＯは９の加熱用ヒーター兼支持具
、１１は系のガスを排気するポンプであり、反応容器１
の圧力を１気圧以下の所定の圧力に保持させる。9 is a substrate for film deposition, IO is a heating heater and support for 9, 11 is a pump for exhausting gas from the system, and reaction vessel 1
The pressure is maintained at a predetermined pressure of 1 atm or less.
このように構成された薄膜製造装装置において、ノズル
７から、Ｈｅで希釈した５％Ｆ２を５０５ｅｃ、Ａ（Ｓ
ＣＣ，は毎分標準状態に換算したガス流量をｃｍ３の単
位で表わした量）、ノズル８からＨｅで希釈した２％５
１２Ｈ６を２０ＯＳＣＧ、それぞれ流し、全圧を２ Ｔ
ｏｒｒにした場合、２重ノズル６の先端から基板９を覆
うようにして、青紫色の発光１２を伴った化学反応が起
こる。この場合、反応生成物は発光スペクトルの解析か
ら、少なくともＳｉＦ、 ＳｉＨが発生していることが
わかる。発光している領域の下にある２５０℃の基板９
の上に茶色の膜が堆積されるのが観察される。この膜は
赤外吸収スペクトルの測定結果からａ−５ｉ：Ｈ：Ｆで
あり、反応時間の経過とともに膜厚が増大する。In the thin film manufacturing equipment configured as described above, 5% F2 diluted with He is supplied from the nozzle 7 for 505 ec, A(S
CC, is the amount expressed in cm3 of the gas flow rate converted to standard conditions per minute), 2% 5 diluted with He from nozzle 8
Flowing 20 OSCG of 12H6, the total pressure was 2 T.
When set to orr, a chemical reaction accompanied by blue-violet light emission 12 occurs from the tip of the double nozzle 6 to cover the substrate 9. In this case, analysis of the emission spectrum shows that at least SiF and SiH are generated as reaction products. Substrate 9 at 250°C under the emitting area
A brown film is observed to be deposited on top. This film is a-5i:H:F based on the measurement results of infrared absorption spectrum, and the film thickness increases as the reaction time progresses.
上記堆積条件中、ガスの流量比を一定にした場合、堆積
膜の成長速度は圧力の増大とともに速くなるが、膜の密
度は減少する。また、内側ノズル７にＳｉ２ Ｈ６、外
側ノズル８にＦ２を流入した場合、膜成長速度は低くな
る。また、Ｓｉ２Ｈ６の代わりにＳｉＨ４、Ｓｉ３ Ｈ
Ｂ 、Ｓｉ４ Ｈ６（ＳｉｎＨ２乳ヤニ）を使用した場
合においても、ａ−５ｉ：旧Ｆ膜の作成は可能である。Under the above deposition conditions, when the gas flow rate ratio is kept constant, the growth rate of the deposited film increases as the pressure increases, but the density of the film decreases. Furthermore, when Si2 H6 flows into the inner nozzle 7 and F2 flows into the outer nozzle 8, the film growth rate becomes low. Also, instead of Si2H6, SiH4, Si3H
Even when B, Si4 H6 (SinH2 milk resin) is used, it is possible to create an a-5i: former F film.
［発明の効果］
ば、Ｆ２とＳｉｎ Ｈａｎ＋２とを２重ノズルより反応
容器に同時に噴出させて化学反応を起こさせ、反応が起
こっている近傍に設置した基板上に、ａ−５ｔ：Ｈ：Ｆ
ｌｌ！を得ることができ、極めて簡便なプロセスで薄膜
を製造できる。[Effects of the Invention] For example, F2 and Sin Han+2 are simultaneously ejected into a reaction vessel from a double nozzle to cause a chemical reaction, and a-5t:H:F is placed on a substrate placed near where the reaction is occurring.
ll! can be obtained, and the thin film can be manufactured using an extremely simple process.
したがって、従来のプラズマＣＶＤにみられるような、
高エネルギー粒子による基板あるいは堆積膜に対する損
傷がなく、かつ、プラズマ発生のための複雑な条件設定
も不要である。Therefore, as seen in conventional plasma CVD,
There is no damage to the substrate or deposited film due to high-energy particles, and there is no need to set complicated conditions for plasma generation.
第１図（Ａ）および（Ｂ）は本発明の一実施例を示す模
式図である。
１・・・反応容器、
２．３・・・原料ガス導入管、
４・・・ガス量調整弁、
５・・・層流管、
６・・・２重ノズル、
７・・・内側ノズル、
８・・・仮佃１ノプル。
９・・・基板、
１０・・・ヒーター、
１１・・・排気ポンプ、
１２・・・化学発光領域。FIGS. 1(A) and 1(B) are schematic diagrams showing one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Reaction container, 2.3... Raw material gas introduction pipe, 4... Gas amount adjustment valve, 5... Laminar flow pipe, 6... Double nozzle, 7... Inner nozzle, 8... Karitsukuda 1 Nople. 9... Substrate, 10... Heater, 11... Exhaust pump, 12... Chemiluminescence region.
Claims (1)
素系水素化アモルファスシリコン薄膜を基板上に堆積さ
せることを特徴とする薄膜製造法。A thin film manufacturing method characterized by causing a direct chemical reaction between fluorine and silane in a gas phase to deposit a fluorine-based hydrogenated amorphous silicon thin film on a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61038476A JPS62196821A (en) | 1986-02-24 | 1986-02-24 | Manufacture of thin-film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61038476A JPS62196821A (en) | 1986-02-24 | 1986-02-24 | Manufacture of thin-film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62196821A true JPS62196821A (en) | 1987-08-31 |
| JPH0545055B2 JPH0545055B2 (en) | 1993-07-08 |
Family
ID=12526304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61038476A Granted JPS62196821A (en) | 1986-02-24 | 1986-02-24 | Manufacture of thin-film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62196821A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6134923A (en) * | 1984-07-26 | 1986-02-19 | Res Dev Corp Of Japan | Growing device of semiconductor crystal |
| JPS6296675A (en) * | 1985-10-23 | 1987-05-06 | Canon Inc | Formation of deposited film |
-
1986
- 1986-02-24 JP JP61038476A patent/JPS62196821A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6134923A (en) * | 1984-07-26 | 1986-02-19 | Res Dev Corp Of Japan | Growing device of semiconductor crystal |
| JPS6296675A (en) * | 1985-10-23 | 1987-05-06 | Canon Inc | Formation of deposited film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0545055B2 (en) | 1993-07-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4916119B2 (en) | Equipment for reducing white powder during silicon nitride deposition using remote plasma source cleaning technology | |
| JPS62158874A (en) | Multi-layered structure of thin film and its formation | |
| CN102224599A (en) | Dry cleaning of silicon surface for solar cell applications | |
| EP3751018A1 (en) | Vacuum reaction device and reaction method | |
| US20120115314A1 (en) | Plasma processing apparatus and method of producing amorphous silicon thin film using same | |
| JPS6140035B2 (en) | ||
| TW306937B (en) | ||
| JPS62139876A (en) | Formation of deposited film | |
| JPS62151573A (en) | Deposited film forming device | |
| JPS62196821A (en) | Manufacture of thin-film | |
| JPS62156813A (en) | Thin film semiconductor element and forming method thereof | |
| JPS60175411A (en) | Manufacture of thin semiconductor film and apparatus thereof | |
| CN111916530A (en) | Three-in-one coating equipment for mass production type high-efficiency photovoltaic cell | |
| JPS62142780A (en) | Formation of deposited film | |
| JPS58127331A (en) | Plasma chemical vapor growth apparatus | |
| JP2555209B2 (en) | Thin film manufacturing method | |
| CN220300844U (en) | Film preparation device | |
| JPH0891987A (en) | Apparatus for plasma chemical vapor deposition | |
| JPS6027121A (en) | Photo chemical vapor deposition device | |
| JPH0613256Y2 (en) | Reaction chamber gas introducer | |
| JPS6050168A (en) | Production of thin solid film by photo cvd method | |
| JPH01152631A (en) | Formation of sixoynz insulating film | |
| JPH04262530A (en) | Chemical vapor growth apparatus | |
| JPH03222321A (en) | Manufacture of amorphous semiconductor thin film | |
| KR101527516B1 (en) | Method of growing Si and method of manufacturing solar cell using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |