CN111916530A - Three-in-one coating equipment for mass production type high-efficiency photovoltaic cell - Google Patents
Three-in-one coating equipment for mass production type high-efficiency photovoltaic cell Download PDFInfo
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- CN111916530A CN111916530A CN202010824654.1A CN202010824654A CN111916530A CN 111916530 A CN111916530 A CN 111916530A CN 202010824654 A CN202010824654 A CN 202010824654A CN 111916530 A CN111916530 A CN 111916530A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000576 coating method Methods 0.000 title claims abstract description 22
- 239000011248 coating agent Substances 0.000 title claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000000498 cooling water Substances 0.000 claims description 31
- 239000010453 quartz Substances 0.000 claims description 28
- 239000002775 capsule Substances 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 29
- 238000000034 method Methods 0.000 abstract description 19
- 230000008569 process Effects 0.000 abstract description 18
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052593 corundum Inorganic materials 0.000 abstract description 10
- 238000002161 passivation Methods 0.000 abstract description 10
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 10
- 229910004205 SiNX Inorganic materials 0.000 abstract description 9
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- 229910052681 coesite Inorganic materials 0.000 abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 abstract description 6
- 230000007306 turnover Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 23
- 238000000151 deposition Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses volume-production type high-efficiency three-in-one coating equipment for photovoltaic cells, which relates to the field of passivation of the back of TOPcon cells, wherein a passivation film structure selected by TOPCON cells of photovoltaic enterprises is an Al2O3/SiNx double-layer film or an SiO2/Al2O3/SiNx three-layer film structure, and the three-layer film structure is usually manufactured by more than three pieces of equipment. The coating process is simpler, the production cost is reduced, multiple turnover is not needed in the coating process, the pollution risk is reduced, the process stability is higher, the oxidation time is shortened, and the productivity is greatly improved.
Description
Technical Field
The invention relates to the field of TOPcon battery back passivation, in particular to mass production type efficient photovoltaic cell three-in-one coating equipment.
Background
The photovoltaic power generation technology is developed rapidly in recent years as an environment-friendly new energy technology, and particularly, the crystalline silicon battery technology is the most mature and has the highest market share. The efficiency of the crystal silicon battery with the traditional structure does not basically improve the space, the crystal silicon battery with a new structure and higher efficiency is urgently needed to be developed, the crystal silicon battery with the potential and the highest process feasibility is an N-type TOPCON battery, the efficiency can be improved by more than 1% compared with a conventional aluminum back field battery and the current PERC battery TOPCON battery, and only partial equipment needs to be added on the basis of the original production line. For a high-efficiency battery, the surface passivation requirement of a crystalline silicon wafer is extremely high, and the passivation means that the recombination of photon-generated carriers on the surface is reduced by depositing a layer of film on the surface of crystalline silicon, forming a bond with a surface silicon dangling bond and forming a built-in electric field by rich fixed charges in the film. The conventional cell passivation film is generally a silicon nitride film, the passivation film structure selected by TOPCON cells of various photovoltaic enterprises at present is an Al2O3/SiNx double-layer film or a SiO2/Al2O3/SiNx three-layer film structure, wherein the SiO2 and silicon crystal lattice matching property is higher, the chemical passivation effect is better, Al2O3 is rich in high-concentration negative charges and has a good field effect physical passivation effect, and the SiNx film on the outermost layer has the functions of increasing light absorption and surface protection. The passivation effect of the SiO2/Al2O3/SiNx three-layer film is better, the cell efficiency is higher, but the current process for preparing the three-layer film is complex and can be completed by more than two kinds of equipment, including a thermal oxidation furnace and Al2O3/SiNx two-in-one coating equipment, so that the equipment investment cost is greatly increased, the pollution risk in the turnover process of a silicon wafer is reduced, and the productivity is low due to too long time of a thermal oxidation process.
There are mainly the following three problems:
1. the three-layer film can be completed by more than two devices, and the investment of the main device and the feeding and discharging end devices is high;
2. the pollution risk in the silicon wafer turnover process is increased, and the process stability is low;
3. the process flow is complex, the process time is long, and the productivity is low.
Disclosure of Invention
The invention aims to solve the defects in the prior art, and provides mass production type high-efficiency photovoltaic cell three-in-one film coating equipment, which realizes the rapid thermal oxidation deposition of a first SiO2 film layer by O3/H2O steam, and the PEALD deposition of Al2O3 and the final PECVD deposition of SiNx in the same quartz tube by matching flange structure design and the quartz tube. The first layer of silicon oxide film of preparation can accelerate silicon oxide growth rate through wet ozone thermal oxidation, avoids the silicon chip surface damage that plasma bombardment leads to in follow-up two layers of aluminium oxide membrane deposition process, has strengthened the passivation effect, trinity filming equipment has greatly promoted the productivity, has reduced manufacturing cost, has promoted battery efficiency.
In order to achieve the purpose, the invention adopts the following technical scheme:
three-in-one coating equipment of high-efficient photovoltaic cell of volume production type, including boiler tube structure, special gas source system, temperature control system the boiler tube structure is including quartz capsule, flange, fixed plate, furnace gate, fixed plate, flange, furnace gate are all installed in proper order to the quartz capsule both ends, a plurality of inlet ports have been seted up all around to the flange, inlet port and the inside intercommunication of quartz capsule.
According to a further technical scheme, the flange is further provided with a cooling water inlet and a cooling water outlet in the circumferential direction, and the cooling water inlet is communicated with the cooling water outlet through a cooling water annular channel.
According to the technical scheme, the cooling water annular channel is arranged inside the flange, and cold water is introduced through the cooling water inlet and flows through the cooling water annular channel and then flows out through the cooling water outlet, so that the flange is cooled conveniently, and the flange rubber sealing ring is prevented from melting.
According to a further technical scheme, heating devices are uniformly distributed on the periphery of the quartz tube and controlled by a temperature control system.
According to the further technical scheme, the source supply system is communicated with the flange near air inlet hole through the special gas pipeline, so that the gas source can be uniformly introduced into the quartz tube, and the film deposition is ensured to be more uniform.
According to the further technical scheme, the special gas pipelines are provided with butterfly valves and mass flow meters so as to control the gas source inlet amount.
Compared with the prior art, the invention has the beneficial effects that:
1. the deposition of the three layers of films is finished in a quartz tube, so that the process is simpler and the production cost is reduced;
2. the special gas source system avoids the conventional high temperature of more than 800 ℃ from being reduced to the deposition process temperature of more than 400 ℃ of the second Al2O3 by adopting the low-medium temperature oxidation of ozone/water vapor below 500 ℃, thereby shortening the oxidation process time and greatly improving the productivity;
3. the three-in-one coating process does not need to be carried over for many times, and the process stability for reducing pollution risks is higher.
Drawings
FIG. 1 is a schematic structural diagram of a mass-production type high-efficiency three-in-one photovoltaic cell coating apparatus according to the present invention;
FIG. 2 is a sectional view of a mass-production high-efficiency three-in-one photovoltaic cell coating apparatus according to the present invention;
FIG. 3 is a schematic view of a flange of a mass-production type high-efficiency three-in-one photovoltaic cell coating apparatus according to the present invention;
FIG. 4 is a schematic view of the internal structure of a flange of the mass-production type high-efficiency three-in-one photovoltaic cell coating equipment;
FIG. 5 is a schematic structural view of a furnace door of the mass production type high-efficiency photovoltaic cell three-in-one coating device;
FIG. 6 is a schematic view of a fixing plate structure of a mass-production type high-efficiency three-in-one photovoltaic cell coating apparatus according to the present invention.
In the figure: 1 fixed plate, 2 flanges, 3 furnace doors, 5 quartz tubes, 6 air inlets, 7 cooling water annular channels, 8 cooling water inlets and 8-1 cooling water outlets.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Referring to fig. 1-6, trinity coating equipment of high-efficient photovoltaic cell of volume production type, including furnace tube structure, special gas source system, temperature control system, the furnace tube structure is including quartz capsule 5, flange 2, fixed plate 1, furnace gate 3, fixed plate 1, flange 2, furnace gate 3 are all installed in proper order at quartz capsule 5 both ends, a plurality of inlet ports 6 have been seted up all around to flange 2, inlet port 6 and the inside switch-on of quartz capsule 5, flange 2 still are equipped with cooling water inlet 8, cooling water outlet 8-1 on the circumferencial direction, cooling water inlet 8 is through cooling water annular channel 7 and cooling water outlet 8-1 intercommunication, cooling water annular channel 7 sets up inside flange 2, lets in cold water through cooling water inlet 8 and flows through cooling water outlet 8-1 behind cooling water annular channel 7, is convenient for the flange 2 cooling, avoid 2 rubber seal of flange to melt, quartz capsule 5 the heating device that evenly has arranged all around, heating device passes through temperature control system control, special gas source system passes through special gas pipeline and flange inlet port intercommunication, makes in the gas source can be even lets in quartz capsule 5, ensures that the film deposit is more even, butterfly valve and mass flowmeter are all installed in special gas pipeline in order to control the gas source volume of letting in.
In summary, the principle of depositing the SiO2 film in the first step is realized by feeding a silicon wafer into a quartz tube through a quartz boat, introducing ozone and water vapor into the quartz tube through a flange air inlet hole by a special gas pipeline, wherein the process temperature is within 500 ℃, heating devices are uniformly distributed around the quartz tube, a preferred temperature control system matched with the heating devices adopts a cascade control system, the silicon oxide film prepared by the method is different from the process temperature of more than 800 ℃ of the conventional thermal oxidation, the cooling time to the process temperature in the second step is greatly shortened, the principle of depositing Al2O3 in the second step is realized, the special gas source system is communicated through the flange air inlet hole of the special gas pipeline, the interior of the flange is in a vacuum state, and the air inlet holes are uniformly distributed and dispersed, so that a gas source can be uniformly introduced into the quartz tube, and the film deposition is ensured to be more uniform. The air source pipelines are all provided with butterfly valves and mass flow meters so as to control the air source input quantity.
Realize third portion deposit SiNx membrane, it is gaseous through required SiH4 and NH3, N2 through special air supply, the inside vacuum form that is of flange, and evenly distributed is the inlet port that disperses the form to make the air supply can be even let in the quartz capsule, ensure that the film deposit is more even, butterfly valve and mass flow meter are all installed in each air supply pipeline in order to control the air supply volume of letting in.
The second three-layer film deposition principle is that glow discharge is generated on a cathode of a process cavity (namely a sample is placed in a graphite boat) by using low-temperature plasma under low pressure, the sample is heated to a preset temperature by using the glow discharge (or a heating element is additionally added), then a proper amount of process gas is introduced, and the gases are subjected to a series of chemical reactions and plasma reactions to finally form a solid film on the surface of the sample.
In the reaction process, the reaction gas enters the quartz tube from the gas inlet hole, is gradually diffused to the surface of the sample, and is decomposed into electrons, ions, active groups and the like under the action of an electric field excited by the radio frequency source. The decomposition products are subjected to chemical reaction to generate initial components and side reactants for forming a film, the products are adsorbed to the surface of a sample in the form of chemical bonds to generate crystal nuclei of a solid film, the crystal nuclei gradually grow into islands, and the islands continuously grow into a continuous film. During the film growth process, various byproducts are gradually separated from the surface of the film and are discharged from the outlet under the action of a vacuum pump. The flange plays an important role in the whole process, all gas enters the quartz tube through the gas inlet holes in the flange, and seals the quartz tube and the outside, so that cooling water needs to circulate inside the flange to cool the flange and avoid melting of a rubber sealing ring, and the gas inlet holes are uniformly distributed on the periphery of the flange to ensure that a gas source is uniformly introduced.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and equivalent alternatives or modifications according to the technical solution of the present invention and the inventive concept thereof should be covered by the scope of the present invention.
Claims (6)
1. Three-in-one coating equipment of high-efficient photovoltaic cell of volume production type, its characterized in that, including boiler tube structure, special gas source system, temperature control system the boiler tube structure is including quartz capsule, flange, fixed plate, furnace gate, fixed plate, flange, furnace gate are all installed in proper order to the quartz capsule both ends, a plurality of inlet ports have been seted up all around to the flange, inlet port and the inside intercommunication of quartz capsule.
2. The three-in-one coating apparatus for mass production type high efficiency photovoltaic cells as claimed in claim 1, wherein the flange further comprises a cooling water inlet and a cooling water outlet along the circumferential direction, and the cooling water inlet is connected to the cooling water outlet through a cooling water annular channel.
3. The three-in-one coating device for the mass production type high-efficiency photovoltaic cells according to claim 2, wherein the cooling water annular channel is arranged inside the flange, and cold water is introduced through the cooling water inlet, flows through the cooling water annular channel and flows out through the cooling water outlet, so that the flange is cooled conveniently, and the flange rubber sealing ring is prevented from melting.
4. The three-in-one coating apparatus for mass production type high efficiency photovoltaic cells according to claim 1, wherein the heating devices are uniformly distributed around the quartz tube, and the heating devices are controlled by a temperature control system.
5. The three-in-one coating apparatus for mass production type high efficiency photovoltaic cells as claimed in claim 1, wherein the special gas source system is connected to the flange gas inlet via a special gas pipeline, so that the gas source can be uniformly introduced into the quartz tube, thereby ensuring more uniform deposition of the thin film.
6. The three-in-one coating apparatus for mass production type high efficiency photovoltaic cells according to claim 5, wherein the special gas pipelines are provided with butterfly valves and mass flow meters to control the gas supply input.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112609171A (en) * | 2020-12-30 | 2021-04-06 | 无锡琨圣智能装备股份有限公司 | Equipment and process for preparing TOPCon battery based on plasma enhanced assisted technology |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112609171A (en) * | 2020-12-30 | 2021-04-06 | 无锡琨圣智能装备股份有限公司 | Equipment and process for preparing TOPCon battery based on plasma enhanced assisted technology |
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